Device incorporating an ir signal transmissive region

ABSTRACT

A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one EM radiation-absorbing layer deposited on a first layer surface and comprising a discontinuous layer of at least one particle structure comprising a deposited material. The at least one particle structure of the at least one EM radiation-absorbing layer facilitates absorption of EM radiation therein in at least a part of at least one of a visible spectrum and a UV spectrum while substantially allowing transmission of EM radiation therein in at least a part of at least one of an IR and an NIR spectrum.

RELATED APPLICATIONS

The present application claims the benefit of priority to: USProvisional Patent Application Nos. U.S. 63/081,707 filed 22 Sep. 2020,U.S. 63/107,393 filed 29 Oct. 2020, U.S. 63/122,421 filed 7 Dec. 2020,U.S. 63/141,857 filed 26 Jan. 2021, U.S. 63/153,834 filed 25 Feb. 2021,U.S. 63/158,185 filed 8 Mar. 2021, U.S. 63/163,453 filed 19 Mar. 2021,and U.S. 63/181,100 filed 28 Apr. 2021, the contents of each of whichare incorporated herein by reference in their entirety.

TECHNICAL FIELD

The present disclosure relates to layered semiconductor devices and inparticular to an opto-electronic device having first and secondelectrodes separated by a semiconductor layer and having a conductivedeposited material deposited thereon, patterned using a patterningcoating, which may act as and/or be a nucleation-inhibiting coating(NIC) and/or such NIC.

BACKGROUND

In an opto-electronic device such as an organic light emitting diode(OLED), at least one semiconducting layer is disposed between a pair ofelectrodes, such as an anode and a cathode. The anode and cathode areelectrically coupled with a power source and respectively generate holesand electrons that migrate toward each other through the at least onesemiconducting layer. When a pair of holes and electrons combine, aphoton may be emitted.

OLED display panels may comprise a plurality of (sub-) pixels, each ofwhich has an associated pair of electrodes. Various layers and coatingsof such panels are typically formed by vacuum-based depositionprocesses.

In some applications, there may be an aim to provide a conductive and/orelectrode coating in a pattern for each (sub-) pixel of the panel acrosseither, or both of, a lateral and a cross-sectional aspect thereof, byselective deposition of at least one thin film of the conductive coatingto form a device feature, such as, without limitation, an electrodeand/or a conductive element electrically coupled therewith, during theOLED manufacturing process.

In some applications, there may be an aim to make the devicesubstantially transparent therethrough, while still capable of emittinglight therefrom. In some applications, the device comprises a pluralityof light transmissive regions arranged between a plurality of lightemissive regions or subpixels. Since light emissive regions generallyinclude layers, coating, and/or components which attenuate or inhibittransmission of external light through such regions, the lighttransmissive regions are generally provided in non-emissive regions ofthe display panel where the presence of such layers, coating, and/orcomponents, which attenuate or inhibit transmission of external light,may be omitted therefrom.

One method for doing so, in some non-limiting application, involves theinterposition of a fine metal mask (FMM) during deposition of adeposited material, including as an electrode and/or a conductiveelement electrically coupled therewith and/or an EM radiation-absorbinglayer. However, such deposited material typically has relatively highevaporation temperatures, which impacts the ability to re-use the FMMand/or the accuracy of the pattern that may be achieved, with attendantincreases in cost, effort, and complexity.

One method for doing so, in some non-limiting examples, involvesdepositing the electrode material and thereafter removing, including bya laser drilling process, unwanted regions thereof to form the pattern.However, the removal process often involves the creation and/or presenceof debris, which may affect the yield of the manufacturing process.

Further, such methods may not be suitable for use in some applicationsand/or with some devices with certain topographical features.

In some non-limiting applications, there may be an aim to increase thetransmission of photons, and/or to reduce absorption of photons, toprovide an improved mechanism for along an optical path through at leasta portion of the device in at least a wavelength sub-range of theelectromagnetic (EM) spectrum, including, without limitation, byproviding selective deposition of a deposited material.

In some non-limiting applications, there may be an aim to provide amechanism for depositing a thin disperse layer of metal NPs in anopto-electronic device, which may impact the performance of the devicein terms of optical properties, performance, stability, reliability,and/or lifetime.

BRIEF DESCRIPTION OF THE DRAWINGS

Examples of the present disclosure will now be described by reference tothe following figures, in which identical reference numerals indifferent figures indicate identical and/or in some non-limitingexamples, analogous and/or corresponding elements and in which:

FIG. 1 is a simplified block diagram from a cross-sectional aspect, ofan example device having a plurality of layers in a lateral aspect,comprising a discontinuous layer of particle structures on an exposedlayer surface of the device, that comprises an EM radiation-absorbinglayer according to an example in the present disclosure;

FIG. 2 is a simplified block diagram showing a version of the device ofFIG. 1 with additional optional layers shown according to an example inthe present disclosure;

FIGS. 3A-3E are SEM micrographs of samples fabricated in examples of thepresent disclosure;

FIG. 3F is a chart of transmittance at various wavelength based onanalysis of the micrographs of FIGS. 3A-3E;

FIGS. 3G-3J are SEM micrographs of samples fabricated in examples of thepresent disclosure;

FIG. 3K is a chart of transmittance at various wavelength based onanalysis of the micrographs of FIGS. 3G-3J;

FIGS. 3L-3O are SEM micrographs of samples fabricated in examples of thepresent disclosure;

FIG. 4A is a schematic diagram showing the EM radiation-absorbing layerof FIG. 1 proximate to an emissive region of the device of FIG. 1 formedby deposition of a patterning coating subsequent to deposition of aplurality of seeds for forming the particle structures according to anexample in the present disclosure;

FIG. 4B is a schematic diagram showing a version of the EMradiation-absorbing layer of FIG. 4A, formed by deposition of thepatterning coating prior to deposition of the plurality of seeds,according to an example in the present disclosure;

FIG. 5 is a schematic diagram illustrating an example cross-sectionalview of an example user device having a display panel having a pluralityof layers, comprising at least one aperture therewithin, according to anexample in the present disclosure;

FIG. 6A is a schematic diagram illustrating use of the user device ofFIG. 5 , where the at least one aperture is embodied by at least onesignal transmissive region, to exchange EM radiation in the IR and/orNIR spectrum for purposes of biometric authentication of a user,according to an example in the present disclosure;

FIG. 6B is a plan view of the user device of FIG. 5 which includes adisplay panel, according to an example in the present disclosure;

FIG. 6C shows the cross-sectional view taken along the line 6C-6C of thedevice shown in FIG. 6B;

FIG. 6D is a plan view of the user device of FIG. 5 which includes adisplay panel, according to an example in the present disclosure;

FIG. 6E shows the cross-sectional view taken along the line 6E-6E of thedevice shown in FIG. 6D;

FIG. 6F is a plan view of the user device of FIG. 5 which includes adisplay panel, according to an example in the present disclosure;

FIG. 6G shows the cross-sectional view taken along the line 6G-6G of thedevice shown in FIG. 6F;

FIG. 6H shows a magnified plan view of portions of the panel accordingto an example in the present disclosure;

FIGS. 7A-7C are simplified block diagrams from a cross-sectional aspect,of various examples of an example user device having a display panel forcovering a body, and at least one under-display component housedtherewithin for exchanging EM signals at an angle to layers of thedisplay panel therethrough, according to an example in the presentdisclosure;

FIGS. 8A-8E each show multiple SEM images of example samples accordingto an example in the present disclosure, together with a plot of adistribution of a number of particles of various characteristic sizestherein;

FIGS. 9A-9B are SEM micrographs of samples fabricated in examples of thepresent disclosure;

FIG. 9C is a chart of average diameter based on analysis of themicrographs of FIGS. 9A-9B;

FIG. 10 is a simplified block diagram from a cross-sectional aspect, ofan example device having a plurality of layers in a lateral aspect,formed by selective deposition of a patterning coating in a firstportion of the lateral aspect, followed by deposition of a closedcoating of deposited material in a second portion thereof, according toan example in the present disclosure;

FIG. 11 is a schematic diagram showing an example process for depositinga patterning coating in a pattern on an exposed layer surface of anunderlying layer in an example version of the device of FIG. 10 ,according to an example in the present disclosure;

FIG. 12 is a schematic diagram showing an example process for depositinga deposited material in the second portion on an exposed layer surfacethat comprises the deposited pattern of the patterning coating of FIG.10 where the patterning coating is a nucleation-inhibiting coating(NIC);

FIG. 13A is a schematic diagram illustrating an example version of thedevice of FIG. 10 in a cross-sectional view;

FIG. 13B is a schematic diagram illustrating the device of FIG. 13A in acomplementary plan view;

FIG. 13C is a schematic diagram illustrating an example version of thedevice of FIG. 10 in a cross-sectional view;

FIG. 13D is a schematic diagram illustrating the device of FIG. 13C in acomplementary plan view;

FIG. 13E is a schematic diagram illustrating an example of the device ofFIG. 12 in a cross-sectional view;

FIG. 13F is a schematic diagram illustrating an example of the device ofFIG. 12 in a cross-sectional view;

FIG. 13G is a schematic diagram illustrating an example of the device ofFIG. 10 in a cross-sectional view;

FIGS. 14A-14I are schematic diagrams that show various potentialbehaviours of a patterning coating at a deposition interface with adeposited layer in an example version of the device of FIG. 10 accordingto various examples in the present disclosure;

FIG. 15 is a block diagram from a cross-sectional aspect, of an exampleelectro-luminescent device according to an example in the presentdisclosure;

FIG. 16 is a cross-sectional view of the device of FIG. 15

FIG. 17 is a schematic diagram illustrating, in plan, an examplepatterned electrode suitable for use in a version of the device of FIG.18 , according to an example in the present disclosure;

FIG. 18 is a schematic diagram illustrating an example cross-sectionalview of the device of FIG. 18 taken along line 18-18;

FIG. 19A is a schematic diagram illustrating, in plan view, a pluralityof example patterns of electrodes suitable for use in an example versionof the device of FIG. 15 according to an example in the presentdisclosure;

FIG. 19B is a schematic diagram illustrating an example cross-sectionalview, at an intermediate stage, of the device of FIG. 19A taken alongline 19B-19B;

FIG. 19C is a schematic diagram illustrating an example cross-sectionalview of the device of FIG. 19A taken along line 19C-19C;

FIG. 20 is a schematic diagram illustrating a cross-sectional view of anexample version of the device of FIG. 15 , having an example patternedauxiliary electrode according to an example in the present disclosure;

FIG. 21 is a schematic diagram illustrating, in plan view an examplepattern of an auxiliary electrode overlaying at least one emissiveregion and at least one non-emissive region according to an example inthe present disclosure;

FIG. 22A is a schematic diagram illustrating, in plan view, an examplepattern of an example version of the device of FIG. 15 having aplurality of groups of emissive regions in a diamond configurationaccording to an example in the present disclosure;

FIG. 22B is a schematic diagram illustrating an example cross-sectionalview of the device of FIG. 22A taken along line 22B-22B;

FIG. 22C is a schematic diagram illustrating an example cross-sectionalview of the device of FIG. 22A taken along line 22C-22C;

FIG. 23 is a schematic diagram illustrating an example cross-sectionalview of an example version of the device of FIG. 16 with additionalexample deposition steps according to an example in the presentdisclosure;

FIG. 24 is a schematic diagram illustrating an example cross-sectionalview of an example version of the device of FIG. 16 with additionalexample deposition steps according to an example in the presentdisclosure;

FIG. 25 is a schematic diagram illustrating an example cross-sectionalview of an example version of the device of FIG. 16 with additionalexample deposition steps according to an example in the presentdisclosure;

FIG. 26 is a schematic diagram illustrating an example cross-sectionalview of an example version of the device of FIG. 16 with additionalexample deposition steps according to an example in the presentdisclosure;

FIG. 27A is a schematic diagram illustrating, in plan view, an exampleof a transparent version of the device of FIG. 15 comprising at leastone example pixel region and at least one example light-transmissiveregion, with at least one auxiliary electrode according to an example inthe present disclosure;

FIG. 27B is a schematic diagram illustrating an example cross-sectionalview of the device of FIG. 27A taken along line 27B-27B;

FIG. 28A is a schematic diagram illustrating, in plan view, an exampleof a transparent version of the device of FIG. 15 comprising at leastone example pixel region and at least one example light-transmissiveregion according to an example in the present disclosure;

FIG. 28B is a schematic diagram illustrating an example cross-sectionalview of the device of FIG. 28A taken along line 28-28;

FIG. 28C is a schematic diagram illustrating an example cross-sectionalview of the device of FIG. 28A taken along line 28-28;

FIG. 29 is a schematic diagram that may show example stages of anexample process for manufacturing an example version of the device ofFIG. 16 having sub-pixel regions having a second electrode of differentthickness according to an example in the present disclosure;

FIG. 30 is a schematic diagram illustrating an example cross-sectionalview of an example version of the device of FIG. 15 in which a secondelectrode is coupled with an auxiliary electrode according to an examplein the present disclosure;

FIG. 31 is a schematic diagram illustrating an example cross-sectionalview of an example version of the device of FIG. 15 having a partitionand a sheltered region, such as a recess, in a non-emissive regionthereof according to an example in the present disclosure;

FIGS. 32A-32B are schematic diagrams that show example cross-sectionalviews of an example version of the device of FIG. 15 having a partitionand a sheltered region, such as an aperture, in a non-emissive region,according to various examples in the present disclosure;

FIGS. 33A-33C are schematic diagrams that show example stages of anexample process for depositing a deposited layer in a pattern on anexposed layer surface of an example version of the device of FIG. 15 byselective deposition and subsequent removal process, according to anexample in the present disclosure;

FIG. 34 is an example energy profile illustrating relative energy statesof an adatom absorbed onto a surface according to an example in thepresent disclosure; and

FIG. 35 is a schematic diagram illustrating the formation of a filmnucleus according to an example in the present disclosure.

In the present disclosure, a reference numeral having at least onenumeric value (including without limitation, in subscript) and/orlower-case alphabetic character(s) (including without limitation, inlower-case) appended thereto, may be considered to refer to a particularinstance, and/or subset thereof, of the element or feature described bythe reference numeral. Reference to the reference numeral withoutreference to the appended value(s) and/or character(s) may, as thecontext dictates, refer generally to the element(s) or feature(s)described by the reference numeral, and/or to the set of all instancesdescribed thereby. Similarly, a reference numeral may have the letter“x’ in the place of a numeric digit. Reference to such reference numeralmay, as the context dictates, refer generally to the element(s) orfeature(s) described by the reference numeral, where the character “x”is replaced by a numeric digit, and/or to the set of all instancesdescribed thereby.

In the present disclosure, for purposes of explanation and notlimitation, specific details are set forth to provide a thoroughunderstanding of the present disclosure, including, without limitation,particular architectures, interfaces and/or techniques. In someinstances, detailed descriptions of well-known systems, technologies,components, devices, circuits, methods, and applications are omitted tonot obscure the description of the present disclosure with unnecessarydetail.

Further, it will be appreciated that block diagrams reproduced hereincan represent conceptual views of illustrative components embodying theprinciples of the technology.

Accordingly, the system and method components have been representedwhere appropriate by conventional symbols in the drawings, showing onlythose specific details that are pertinent to understanding the examplesof the present disclosure, to not obscure the disclosure with detailsthat will be readily apparent to those of ordinary skill in the arthaving the benefit of the description herein.

Any drawings provided herein may not be drawn to scale and may not beconsidered to limit the present disclosure in any way.

Any feature or action shown in dashed outline may in some examples beconsidered as optional.

SUMMARY

It is an object of the present disclosure to obviate or mitigate atleast one disadvantage of the prior art.

It is an object of the present disclosure to obviate or mitigate atleast one disadvantage of the prior art.

The present disclosure discloses a semiconductor device having aplurality of layers deposited on a substrate and extending in at leastone lateral aspect defined by a lateral axis thereof. The devicecomprises at least one EM radiation-absorbing layer deposited on a firstlayer surface and comprising a discontinuous layer of at least oneparticle structure comprising a deposited material. The at least oneparticle structure of the at least one EM radiation-absorbing layerfacilitates absorption of EM radiation therein in at least a part of atleast one of a visible spectrum and a ultraviolet (UV) spectrum whilesubstantially allowing transmission of EM radiation therein in at leasta part of at least one of an IR and an NIR spectrum.

According to a broad aspect, there is disclosed a semiconductor devicehaving a plurality of layers deposited on a substrate and extending inat least one lateral aspect defined by a lateral axis thereof,comprising: at least one electromagnetic (EM) radiation-absorbing layerdeposited on a first layer surface and comprising a discontinuous layerof at least one particle structure comprising a deposited material;wherein the at least one particle structure of the at least one EMradiation-absorbing layer facilitates absorption of EM radiation thereinin at least a part of at leas tone of a visible spectrum and anultraviolet (UV) spectrum while substantially allowing transmission ofEM radiation therein in at least a part of at least one of an infrared(IR) spectrum and a near infrared (NIR) spectrum.

In some non-limiting examples, the deposited material may be a metal. Insome non-limiting examples, the deposited material may comprise at leastone of magnesium, silver, and ytterbium. In some non-limiting examples,the deposited material may be co-deposited with a co-depositeddielectric material.

In some non-limiting examples, the at least one particle may have acharacteristic feature selected from at least one of: a size, sizedistribution, shape, surface coverage, configuration, deposited density,and composition. In some non-limiting examples, the at least oneparticle structure may have a percentage coverage of at least one ofbetween about 10-50%, 10-45%, 12-40%, 15-40%, 15-35%, 18-35%, 20-35%,and 20-30%. In some non-limiting examples, a majority of the at leastone particle structures may have a maximum feature size of no more thanat least one of about: 40 nm, 35 nm, 30 nm, 25 nm, and 20 nm. In somenon-limiting examples, the at least one particle structure may have afeature size that is at leas tone of a mean and a median that is atleast one of between about: 5-40 nm, 5-30 nm, 8-30 nm, 10-30 nm, 8-25nm, 10-25 nm, 8-20 nm, 10-20 nm, 10-15 nm, and 8-15 nm. In somenon-limiting examples, the at least one particle structure may comprisea seed about which the deposited material tends to coalesce.

In some non-limiting examples, the device may further comprise apatterning coating disposed on a second layer surface, wherein: thefirst layer surface is an exposed layer surface of the patterningcoating; an initial sticking probability against deposition of thedeposited material on a surface of the patterning coating issubstantially less than at least one of: 0.3 and the initial stickingprobability against deposition of the deposited material on the secondlayer surface, such that the patterning coating is substantially devoidof a closed coating of the deposited material. In some non-limitingexamples, the patterning coating may comprise at least one patterningmaterial. In some non-limiting examples, the patterning coating maycomprise a first patterning material having a first initial stickingprobability against deposition of the deposited material and a secondpatterning material having a second initial sticking probability againstdeposition of the deposited material, wherein the first initial stickingprobability is substantially less than the second initial stickingprobability. In some non-limiting examples, the first patterningmaterial may be a nucleation inhibiting coating (NIC) material and thesecond patterning material is selected from at least one of an electrontransport layer (ETL) material, Liq, and lithium fluoride (LiF).

In some non-limiting examples, the layers may extend in a first portionand a second portion of the at least one lateral aspect, the at leastone EM radiation-absorbing layer extending across the first portion, thedevice adapted to pass at least one EM signal through the first portion,at an angle relative to the layers. In some non-limiting examples, theat least one EM signal may have a wavelength range in at least a part ofat least one of the IR spectrum and the NIR spectrum. In somenon-limiting examples, the first portion may be substantially devoid ofa closed coating of the deposited material. In some non-limitingexamples, the first portion may correspond to at least part of a signaltransmissive region.

In some non-limiting examples, the device may be adapted to accept theat least one EM signal therethrough, for exchange with at least oneunder-display component. In some non-limiting examples, the at least oneunder-display component may comprise at least one of: a receiver adaptedto receive; and a transmitter adapted to emit, the at least one EMsignal passing through the device. In some non-limiting examples, thereceiver may be an IR detector and the transmitter may be an IR emitter.In some non-limiting examples, the transmitter may emit a first EMsignal and the receiver may detect a second EM signal that is areflection of the first EM signal. In some non-limiting examples, theexchange of the first and second EM signals may provide biometricauthentication of a user.

In some non-limiting examples, the device may form a display panel of auser device enclosing the under-display component therewith.

In some non-limiting examples, the second portion may comprise at leastone emissive region for emitting the at least one EM signal at an anglerelative to the layers. In some non-limiting examples, the device mayfurther comprise at least one semiconducting layer disposed on a layerthereof, wherein: each emissive region comprises a first electrode and asecond electrode, the first electrode is disposed between the substrateand the at least one semiconducting layer, and the at least onesemiconducting layer is disposed between the first electrode and thesecond electrode.

In some non-limiting examples, the device may further comprise at leastone closed coating of a deposited material on an exposed layer surfacein the second portion. In some non-limiting examples, the secondelectrode may comprise the at least one closed coating of the depositedmaterial.

DESCRIPTION Layered Device

The present disclosure relates generally to layered semiconductordevices, and more specifically, to opto-electronic devices. Anopto-electronic device may generally encompass any device that convertselectrical signals into photons and vice versa. In some non-limitingexamples, the layered semiconductor device, including withoutlimitation, the opto-electronic device, may serve as a face, includingwithout limitation, a display panel, of a user device.

Those having ordinary skill in the relevant art will appreciate that,while the present disclosure is directed to opto-electronic devices, theprinciples thereof may be applicable to any panel having a plurality oflayers, including without limitation, at least one layer of conductivedeposited material 1231 (FIG. 12 ), including as a thin film, and insome non-limiting examples, through which electromagnetic (EM) signalsmay pass, entirely or partially, at an angle relative to a plane of atleast one of the layers.

Turning now to FIG. 1 , there may be shown a cross-sectional view of anexample layered device 100. In some non-limiting examples, as shown ingreater detail in FIG. 10 , the device 100 may comprise a plurality oflayers deposited upon a substrate 10, including without limitation, afirst layer 110.

A lateral axis, identified as the X-axis, may be shown, together with alongitudinal axis, identified as the Z-axis. A second lateral axis,identified as the Y-axis, may be shown as being substantially transverseto both the X-axis and the Z-axis. At least one of the lateral axes maydefine a lateral aspect of the device 100. Some figures herein may beshown in plan. In such plan view(s), a pair of lateral axes, identifiedas the X-axis and Y-axis respectively, which in some examples may besubstantially transverse to one another, are shown. At least one ofthese lateral axes may define a lateral aspect of the device 100.

The layers of the device 100 may extend in the lateral aspectsubstantially parallel to a plane defined by the lateral axes. Thosehaving ordinary skill in the relevant art will appreciate that thesubstantially planar representation shown in FIG. 1 may be, in somenon-limiting examples, an abstraction for purposes of illustration. Insome non-limiting examples, there may be, across a lateral extent of thedevice 100, localized substantially planar strata of differentthicknesses and dimension, including, in some non-limiting examples, thesubstantially complete absence of a layer, and/or layer(s) separated bynon-planar transition regions (including lateral gaps and evendiscontinuities).

Thus, while for illustrative purposes, the device 100 may be shown inits cross-sectional aspect as a substantially stratified structure ofsubstantially parallel planar layers, such device may illustratelocally, a diverse topography to define features, each of which maysubstantially exhibit the stratified profile discussed in thecross-sectional aspect.

EM Radiation Absorption

A nanoparticle (NP) is a particle structure 121 of matter whosepredominant characteristic size is of nanometer (nm) scale, generallyunderstood to be between about: 1-300 nm. At nm scale, NPs of a givenmaterial may possess unique properties (including without limitation,optical, chemical, physical, and/or electrical) relative to the samematerial in bulk form.

These properties may be exploited when a plurality of NPs is formed intoa layer of a layered semiconductor device, including without limitation,an opto-electronic device, to improve its performance.

Current mechanisms for introducing such a layer of NPs into a devicehave some drawbacks.

First, typically, such NPs are formed into a close-packed layer, and/ordispersed into a matrix material, of such device. Consequently, thethickness of such an NP layer may be typically much thicker than thecharacteristic size of the NPs themselves. The thickness of such NPlayer may impart undesirable characteristics in terms of deviceperformance, device stability, device reliability, and/or devicelifetime that may reduce or even obviate any perceived advantagesprovided by the unique properties of NPs.

Second, techniques to synthesize NPs, in and for use in such devices mayintroduce large amounts of carbon (C), oxygen (O), and/or sulfur (S)through various mechanisms.

By way of non-limiting example, wet chemical methods may be typicallyused to introduce NPs that have a precisely controlled characteristicsize, size distribution, shape, surface coverage, configuration, and/ordeposited density into a device. However, such methods typically employan organic capping group (such as the synthesis of citrate-capped silver(Ag) NPs) to stabilize the NPs, but such organic capping groupsintroduce C, O, and/or S, into the synthesized NPs.

Still further, an NP layer deposited from solution may typicallycomprise C, O, and/or S, because of the solvents used in deposition.

Additionally, these elements may be introduced as contaminants duringthe wet chemical process and/or the deposition of the NP layer.

However introduced, the presence of a high amount of C, O, and/or S, inthe NP layer of such a device, may erode the performance, stability,reliability, and/or lifetime of such device.

Third, when depositing an NP layer from solution, as the employedsolvents dry, the NP layer tends to have non-uniform properties acrossthe NP layer, and/or between different patterned regions of such layer.In some non-limiting examples, an edge of a given NP layer may beconsiderably thicker or thinner than an internal region of such NPlayer, which disparities may adversely impact the device performance,stability, reliability, and/or lifetime.

Fourth, while there are other methods and/or processes, beyond wetchemical synthesis and solution deposition processes, of synthesizingand/or depositing NPs, including without limitation, a vacuum-basedprocess such as, without limitation, PVD, existing methods tend toprovide poor control of the characteristic size, size distribution,shape, surface coverage, configuration, deposited density, and/ordispersity of the NPs deposited thereby. By way of non-limiting example,in a conventional PVD process, the NPs tend to form a close-packed filmas their size increases. As a result, methods such as conventional PVDmethods are generally not well-suited to form an NP layer of largedisperse NPs with low surface coverage. Rather, the poor control ofcharacteristic size, size distribution, shape, surface coverage,configuration, and/or deposited density, imparted by such conventionalmethods may result in poor device performance, stability, reliability,and/or lifetime.

EM radiation-absorbing coatings take advantage of plasmonics, a branchof nanophotonics, which studies the resonant interaction of EM radiationwith metals. Those having ordinary skill in the relevant art willappreciate that metal NPs may exhibit LSP excitations and/or coherentoscillations of free electrons, whose optical response may be tailoredby varying a characteristic size, size distribution, shape, surfacecoverage, configuration, deposited density, and/or composition of thenanostructures. Such optical response, in respect of EMradiation-absorbing coatings, may include absorption of EM radiationincident thereon, thereby reducing reflection thereof.

Turning again to FIG. 1 , in some non-limiting examples, an EMradiation-absorbing (NP) layer 120 may be employed as part of a layeredsemiconductor device 100, for absorbing EM radiation incident thereon,or concomitantly, for reducing reflection off the device 100.

In some non-limiting examples, the EM radiation-absorbing layer 120 maybe deposited on and/or over the exposed layer surface 11, includingwithout limitation, of an underlying layer, such as, without limitation,the first layer 110.

In some non-limiting examples, the EM radiation-absorbing layer 120 maybe formed by depositing discrete metal particle structures 121,including as a discontinuous layer 130, which in some non-limitingexamples, may comprise NPs, of a given characteristic size, sizedistribution, shape, surface coverage, configuration, deposited density,and/or composition.

In some non-limiting examples, the particle structures 121 making up theEM radiation-absorbing layer 120 may be, and/or comprise discrete metalplasmonic islands or clusters.

Those having ordinary skill in the relevant art will appreciate that,having regard to the mechanism by which materials are deposited, due topossible stacking and/or clustering of monomers and/or atoms, an actualsize, height, weight, thickness, shape, profile, and/or spacing of theparticle structures 121 in the EM radiation-absorbing layer 120 may be,in some non-limiting examples, substantially non-uniform. Additionally,although the particle structures 121 in the EM radiation-absorbing layer120 are illustrated as having a given profile, this is intended to beillustrative only, and not determinative of any size, height, weight,thickness, shape, profile, and/or spacing of such particle structures121.

In some non-limiting examples, the absorption may be concentrated in anabsorption spectrum that is a range of the EM spectrum, includingwithout limitation, the visible spectrum, and/or a sub-range thereof. Insome non-limiting examples, employing an EM radiation-absorbing layer120 as part of a layered semiconductor device 100 may reduce reliance ona polarizer therein.

Those having ordinary skill in the relevant art will appreciate that insome non-limiting examples, a plurality of EM radiation-absorbing layers120 may be disposed on one another, whether or not separated byadditional layers, with varying lateral aspects and having differentabsorption spectra. In this fashion, the absorption of certain regionsof the device may be tuned according to one or more absorption spectra.

While the EM radiation-absorbing layer 120 may absorb EM radiationincident thereon from beyond the layered semiconductor device 100, thusreducing reflection, those having ordinary skill in the relevant artwill appreciate that, in some non-limiting examples, the EMradiation-absorbing layer 120 may absorb EM radiation incident thereonthat it emitted by the device 100.

In some non-limiting examples, such particle structures 121 may beformed by depositing a scant amount, in some non-limiting examples,having an average layer thickness that may be on the order of a few, ora fraction of an angstrom), of a deposited material 1231 on an exposedlayer surface 11 of an underlying layer, including without limitation,the first layer 110. In some non-limiting examples, the exposed layersurface 11 may be of a nucleation-promoting coating (NPC) 1420 (FIG.14C).

Seeds

In some non-limiting examples, the size, height, weight, thickness,shape, profile, and/or spacing of the particle structures 121 in the EMradiation-absorbing layer 120 may be, to a greater or lesser extent,specified by depositing seed material, as part of the EMradiation-absorbing layer 120, in a templating layer at appropriatelocations and/or at an appropriate density and/or stage of deposition.In some non-limiting examples, such seed material may act as a seed 122or heterogeneity, to act as a nucleation site such that when a depositedmaterial 1231 may tend to coalesce around each seed 122 to form theparticle structures 121.

In some non-limiting examples, the seed material may comprise a metal,including without limitation, ytterbium (Yb) or Ag. In some non-limitingexamples, the seed material may have a high wetting property withrespect to the deposited material 1231 deposited thereon and coalescingthereto.

In some non-limiting examples, the seeds 122 may be deposited in thetemplating layer, across the exposed layer surface 11 of the device 100,in some non-limiting examples, using an open mask and/or a mask-freedeposition process, of the seed material.

EM Layer Patterning Coating

Turning now to FIG. 2 , in which a version 200 of the device 100 isshown, with additional optional layers, in some non-limiting examples,an EM layer patterning coating 210 _(e) may be selectively deposited,for purposes of depositing the EM radiation-absorbing layer 120, acrossan underlying layer, including without limitation, the first layer 110,by the interposition, between a patterning material 1111 (FIG. 11 ) ofwhich the EM layer patterning coating 210 _(e) is comprised, and theexposed layer surface 11, of a shadow mask 1115 (FIG. 11 ), which insome non-limiting examples, may be a fine metal mask (FMM).

After selective deposition of the EM layer patterning coating 210 _(e),a deposited material 1231 may be deposited over the device 200, in somenon-limiting examples, using an open mask and/or a mask-free depositionprocess, as, and/or to form, particle structures 121 therein thatcomprise the EM radiation-absorbing layer 120, including withoutlimitation, by coalescing around respective seeds 122, if any, that arenot covered by the EM layer patterning coating 210 _(e).

The EM layer patterning coating 210 _(e) may provide a surface with arelatively low initial sticking probability against the deposition ofthe deposited material 1231, that may be substantially less than aninitial sticking probability against the deposition of the depositedmaterial 1231, of the exposed layer surface 11 of the underlying layerof the device 200.

Thus, the exposed layer surface 11 of the underlying layer may besubstantially devoid of a closed coating 1040 (FIG. 10 ) of thedeposited material 1231 that may be deposited to form the particlestructures 121, including without limitation, by coalescing around theseeds 122 not covered by the EM layer patterning coating 210 _(e).

In this fashion, the EM layer patterning coating 210 _(e) may beselectively deposited, including without limitation, using a shadow mask1115, to allow the deposited material 1231 to be deposited, includingwithout limitation, using an open mask and/or a mask-free depositionprocess, so as to form particle structures 121, including withoutlimitation, by coalescing around respective seeds 122.

In some non-limiting examples, the deposited material 1231 to bedeposited over the exposed layer surface 11 of the device 200 may have adielectric constant property that may, in some non-limiting examples,have been chosen to facilitate and/or increase the absorption, by the EMradiation-absorbing layer 120, of EM radiation generally, or in sometime-limiting examples, in a wavelength range of the EM spectrum,including without limitation, the visible spectrum, and/or a sub-rangeand/or wavelength thereof, including without limitation, correspondingto a specific colour.

In some non-limiting examples, an EM layer patterning coating 210 _(e)may comprise a patterning material 1111 that exhibits a relatively lowinitial sticking probability with respect to the seed material and/orthe deposited material 1231 such that the surface of such EM layerpatterning coating 210 _(e) may exhibit an increased propensity to causethe deposited material 1231 (and/or the seed material) to be depositedas particle structures 121, in some examples, relative to non-EM layerpatterning coatings 210 _(n) and/or patterning materials 1111 of whichthey may be comprised, used for purposes of inhibiting deposition of aclosed coating 1040 of the deposited material 1231, including theapplications discussed herein, other than the formation of the EMradiation-absorbing layer 120.

In some non-limiting examples, an EM layer patterning coating 210 _(e)may comprise a plurality of materials, wherein at least one materialthereof is a patterning material 1111, including without limitation, apatterning material 1111 that exhibits such a relatively low initialsticking probability with respect to the deposited material 1231 and/orthe seed material as discussed above.

In some non-limiting examples, a first one of the plurality of materialsmay be a patterning material 1111 that has a first initial stickingprobability against deposition of the deposited material 1231 and/or theseed material and a second one of the plurality of materials may be apatterning material that has a second initial sticking probabilityagainst deposition of the deposited material 1231 and/or the seedmaterial, wherein the second initial sticking probability exceeds thefirst initial sticking probability.

In some non-limiting examples, the first initial sticking probabilityand the second initial sticking probability may be measured usingsubstantially identical conditions and parameters.

In some non-limiting examples, the first one of the plurality ofmaterials may be doped, covered, and/or supplemented with the second oneof the plurality of materials, such that the second material may act asa seed or heterogeneity, to act as a nucleation site for the depositedmaterial 1231 and/or the seed material.

In some non-limiting examples, the second one of the plurality ofmaterials may comprise an NPC 1420. In some non-limiting examples, thesecond one of the plurality of materials may comprise an organicmaterial, including without limitation, a polycyclic aromatic compound,and/or a material comprising a non-metallic element including withoutlimitation, O, S, nitrogen (N), or C, whose presence might otherwise beconsidered to be a contaminant in the source material, equipment usedfor deposition, and/or the vacuum chamber environment. In somenon-limiting examples, the second one of the plurality of materials maybe deposited in a layer thickness that is a fraction of a monolayer, toavoid forming a continuous coating 1040 thereof. Rather, the monomers1232 (FIG. 12 ) of such material may tend to be spaced apart in thelateral aspect so as to form discrete nucleation sites for the depositedmaterial 1231 and/or seed material.

A series of samples was fabricated to evaluate the suitability of an EMradiation-absorbing layer 120 formed by an EM layer patterning coating210 _(e) comprising a mixture of a first patterning material 1111 ₁ anda second patterning material 1111 ₂. In all the samples, the firstpatterning material 1111 ₁ was a nucleation inhibiting coating (NIC)having a substantially low initial sticking probability against thedeposition of Ag as a deposited material 1231. Three example materialswere evaluated as the second patterning material 1111 ₂, namely an ETL1537 (FIG. 15 ) material, Liq, which tends to have a relatively highinitial sticking probability against the deposition of Ag as a depositedmaterial 1231 and may be suitable, in some non-limiting examples, as anNPC 1420, and LiF.

For the ETL 1537 material, a number of samples were prepared byco-depositing the first patterning material 1111 ₁ and the ETL 1537material in varying ratios, to an average layer thickness of 20 nm on anindium tin oxide (ITO) substrate and thereafter exposing the exposedlayer surface 11 thereof to a vapor flux 1232 of Ag to a reference layerthickness of 15 nm.

Six samples were prepared, where the ratio of the ETL 1537 material tothe first patterning material 1111 ₁ by % volume were respectively 1:99(ETL Sample A), 2:98 (ETL Sample B), 5:95 (ETL Sample C), 10:90 (ETLSample D), 20:80 (ETL Sample E), and 40:60 (ETL Sample F). Additionally,two comparative samples were prepared, where the ratio of the ETL 1537material to the first patterning material 1111 ₁ by % volume wererespectively 0:100 (Comparative Sample 1) and 100:0 (Comparative Sample2).

ETL Sample B exhibited a total surface coverage of 15.156%, a meancharacteristic size of 13.6292 nm, a dispersity of 2.0462, a numberaverage of the particle diameters of 14.5399 nm, and a size average ofthe particle diameters of 20.7989 nm.

ETL Sample C exhibited a total surface coverage of 22.083%, a meancharacteristic size of 16.6985 nm, a dispersity of 1.6813, a numberaverage of the particle diameters of 17.8372 nm, and a size average ofthe particle diameters of 23.1283 nm.

ETL Sample D exhibited a total surface coverage of 27.0626%, a meancharacteristic size of 19.4518 nm, a dispersity of 1.5521, a numberaverage of the particle diameters of 20.7487 nm, and a size average ofthe particle diameters of 25.8493 nm.

ETL Sample E exhibited a total surface coverage of 35.5376%, a meancharacteristic size of 24.2092 nm, a dispersity of 1.6311, a numberaverage of the particle diameters of 25.858 nm, and a size average ofthe particle diameters of 32.9858 nm.

FIGS. 3A-3E are respectively SEM micrographs of Comparative Sample 1,ETL Sample B, ETL Sample C, ETL Sample D, and ETL Sample E.

FIG. 3F is a histogram plotting a histogram distribution of particlestructures 121 as a function of characteristic particle size, for ETLSample B 305, ETL Sample C 310, ETL Sample D 315, and ETL Sample E 320,and respective curves fitting the histogram 306, 311, 316, 321.

Table 1 below shows measured transmittance reduction percent reductionvalues for various samples at various wavelengths.

TABLE 1 Wavelength Sample 450 nm 550 nm 700 nm 850 nm Comparative Sample1 1.5%  <1% <1% <1% ETL Sample B (2:98)  9%  5% <1% <1% ETL Sample C(5:95) 17% 11% 2.4%   1% ETL Sample D (10:90) 29% 24% 11%  5% ETL SampleD (20:80) 33% 32% 21% 13%

As may be seen, with relatively low concentrations of the ETL as thesecond patterning material 1111 ₂, there was minimal reduction intransmittance across most wavelengths. However, as the ETL concentrationexceeded about 5% vol, a substantial reduction (>10%) was observed atwavelengths of 450 nm and 550 nm in the visible spectrum, withoutsignificant reduction in transmittance at wavelengths of 700 nm in theIR spectrum and 850 nm in the NIR spectrum.

For Liq, a number of samples were prepared by co-depositing the firstpatterning material 1111 ₁ and the Liq in varying ratios, to an averagelayer thickness of 20 nm on an ITO substrate and thereafter exposing theexposed layer surface 11 thereof to a vapor flux 1232 of Ag to areference layer thickness of 15 nm.

Four samples were prepared, where the ratio of Liq to the firstpatterning material 1111 ₁ by % volume were respectively 2:98 (LiqSample A), 5:95 (Liq Sample B), 10:90 (Liq Sample C), and 20:80 (LiqSample D).

Liq Sample A exhibited a total surface coverage of 11.1117%, a meancharacteristic size of 13.2735 nm, a dispersity of 1.651, a numberaverage of the particle sizes of 13.9619 nm, and a size average of theparticle sizes of 17.9398 nm.

Liq Sample B exhibited a total surface coverage of 17.2616%, a meancharacteristic size of 15.2667 nm, a dispersity of 1.7914, a numberaverage of the particle sizes of 16.3933 nm, and a size average of theparticle sizes of 21.941 nm.

Liq Sample C exhibited a total surface coverage of 32.2093%, a meancharacteristic size of 23.6209 nm, a dispersity of 1.6428, a numberaverage of the particle sizes of 25.3038 nm, and a size average of theparticle sizes of 32.4322 nm.

FIGS. 3G-3J are respectively SEM micrographs of Liq Sample A, Liq SampleB, Liq Sample C, and Liq Sample D.

FIG. 3K is a histogram plotting a histogram distribution of particlestructures 121 as a function of characteristic particle size, for LiqSample B 325, Liq Sample A 330, and Liq Sample C 335, and respectivecurves fitting the histogram 326, 331, 336.

Table 2 below shows measured transmittance reduction percent reductionvalues for various samples at various wavelengths.

TABLE 2 Wavelength Sample 450 nm 550 nm 700 nm 850 nm 1,000 nmComparative 1.5%  <1%   <1% <1% <1% Sample 1 Liq Sample A  7%  4%   <1%<1% <1% (2:98) Liq Sample B 15% 10%  1.5% <1% <1% (5:95) Liq Sample C34% 40% 27.5% 18% 11% (10:90)

As may be seen, with relatively low concentrations of the Liq as thesecond patterning material 1111 ₂, there was minimal reduction intransmittance across most wavelengths. However, as Liq concentrationexceeded about 5% vol, a substantial reduction (>10%) was observed atwavelengths of 450 nm and 550 nm in the visible spectrum, withoutsignificant reduction in transmittance at wavelengths of 700 nm in theIR spectrum and 850 nm and 1,000 nm in the NIR spectrum.

For LiF, a number of samples were prepared by first depositing a the ETLmaterial to an average layer thickness of 20 nm on an ITO substrate,then co-depositing the first patterning material 1111 ₁ and LiF invarying ratios, to an average layer thickness of 20 nm on the exposedlayer surface 11 of the ETL material and thereafter exposing the exposedlayer surface 11 thereof to a vapor flux 1232 of Ag to a reference layerthickness of 15 nm.

Four samples were prepared, where the ratio of LiF to the firstpatterning material 1111 ₁ by % volume were respectively 2:98 (LiFSample A), 5:95 (LiF Sample B), 10:90 (LiF Sample C), and 20:80 (LiFSample D).

FIGS. 3L-3O are respectively SEM micrographs of LiF Sample A, LiF SampleB, LiF Sample C, and LiF Sample D.

FIG. 3K is a histogram plotting a histogram distribution of particlestructures 121 as a function of characteristic particle size, for LiFSample x 340, LiF Sample x 345, and LiF Sample x 350, and respectivecurves fitting the histogram 341, 346, 351.

Table 3 below shows measured transmittance reduction percent reductionvalues for various samples at various wavelengths.

TABLE 3 Wavelength Sample 450 nm 550 nm 700 nm 850 nm 1,000 nmComparative 1.5%  <1% <1% <1% <1% Sample 1 LiF Sample A 2.5% 1.4% <1%<1% <1% (2:98) LiF Sample B   6% 3.4% <1% <1% <1% (5:95) LiF Sample C  8%   5% <1% <1% <1% (10:90)

As may be seen, with relatively low concentrations of LiF as the secondpatterning material 1111 ₂, there was minimal reduction in transmittanceacross most wavelengths. However, as the LiF concentration exceededabout 10% vol, a noticeable reduction (8%) was observed at wavelength of450 nm in the visible spectrum, without significant reduction intransmittance at wavelengths of 700 nm in the IR spectrum and 850 nm and1,000 nm in the NIR spectrum

Additionally, it was observed that there was substantially no reductionin transmittance at wavelengths of 700 nm or greater, for aconcentration of LiF of up to 20% vol.

Co-Deposition with Dielectric Material

Although not shown, in some non-limiting examples, the particlestructures 121 of which the EM radiation-absorbing layer 120 may becomprised, may be formed without the use of seeds 122, including withoutlimitation, by co-depositing the deposited material 1231 with aco-deposited dielectric material.

In some non-limiting examples, a ratio of the deposited material 1231 tothe co-deposited dielectric material may be in a range of at least oneof between about: 50:1-5:1, 30:1-5:1, or 20:1-10:1. In some non-limitingexamples, the ratio may be at least one of about: 50:1, 45:1, 40:1,35:1, 30:1, 25:1, 20:1, 19:1, 15:1, 12.5:1, 10:1, 7.5:1, or 5:1.

In some non-limiting examples, the co-deposited dielectric material mayhave an initial sticking probability, against the deposition of thedeposited material 1231 with which it may be co-deposited, that may beless than 1.

In some non-limiting examples, a ratio of the deposited material 1231 tothe co-deposited dielectric material may vary depending upon the initialsticking probability of the co-deposited dielectric material against thedeposition of the deposited material 1231.

In some non-limiting examples, the co-deposited dielectric material maybe an organic material. In some non-limiting examples, the co-depositeddielectric material may be a semiconductor. In some non-limitingexamples, the co-deposited dielectric material may be an organicsemiconductor.

In some non-limiting examples, co-depositing the deposited material 1231with the co-deposited dielectric material may facilitate formation ofparticle structures 121 in the EM radiation-absorbing layer 120 in theabsence of a templating layer comprising the seeds 122.

In some non-limiting examples, co-depositing the deposited material 1231with the co-deposited dielectric material may facilitate and/or increaseabsorption, by the EM radiation-absorbing layer 120, of EM radiationgenerally, or in some non-limiting examples, in a wavelength range ofthe EM spectrum, including without limitation, the visible spectrum,and/or a sub-range and/or wavelength thereof, including withoutlimitation, corresponding to a specific colour.

Absorption Around Emissive Regions

In some non-limiting examples, the layered semiconductor device 100 maybe an opto-electronic device 200, such as an organic light-emittingdiode (OLED), comprising at least one emissive region 610 (FIG. 6 . Insome non-limiting examples, the emissive region 610 may correspond to atleast one semiconducting layer 1530 (FIG. 15 disposed between a firstelectrode 1520 (FIG. 15 , which in some non-limiting examples, may be ananode, and a second electrode 1540 (FIG. 15 , which in some non-limitingexamples, may be a cathode. The anode and cathode may be electricallycoupled with a power source 1505 (FIG. 15 and respectively generateholes and electrons that migrate toward each other through the at leastone semiconducting layer 1530. When a pair of holes and electronscombine, EM radiation in the form of a photon may be emitted.

In some non-limiting examples, the EM radiation-absorbing layer 120 maybe deposited on and/or over the exposed layer surface 11 of the secondelectrode 1540.

In some non-limiting examples, a lateral aspect of an exposed layersurface 11 of the device 100 may comprise a first portion 401 (FIG. 4A)and a second portion 402 (FIG. 4A). In some non-limiting examples, thesecond portion 402 may comprise that part of the exposed layer surface11 of the underlying layer of the device 100 that lies beyond the firstportion 401.

In some non-limiting examples, the EM radiation-absorbing layer 120 maybe omitted, or may not extend, over the first portion 401, but rathermay only extend over the second portion 402. In some non-limitingexamples, as shown by way of non-limiting example in FIG. 4A, the firstportion 401 may correspond, to a greater or lesser extent, to a lateralaspect 1620 (FIG. 16 ) of at least one non-emissive region 1902 (FIG.19A) of a version 400 a of the device 100, in which the seeds 122 may bedeposited before deposition of a non-EM layer patterning coating 210_(n).

Such a non-limiting configuration may be appropriate to enable and/or tomaximize transmittance of EM radiation emitted from the at least oneemissive region 610, while reducing reflection of external EM radiationincident on an exposed layer surface 11 of the device 100.

Thus, as shown in FIG. 4A, in such a scenario, where the non-EM layerpatterning coating 210 _(n) may be deposited, not for purposes ofdepositing the EM radiation-absorbing layer 120, but for limiting thelateral extent thereof, the patterning material 1111 of which suchnon-EM layer patterning coating 210 _(n) may be comprised may notexhibit a relatively low initial sticking probability with respect tothe deposited material 1231 and/or the seed material, such as discussedabove.

Those having ordinary skill in the relevant art will appreciate that insome non-limiting examples, the EM radiation-absorbing layer 120 may beomitted from region(s) of the device 100 other than, and/or in additionto, the emissive region(s) 610 of the device 100, and the second portion402 may, in some examples, correspond to, and/or comprise such otherregion(s).

In some non-limiting examples, the absorption may be concentrated in anabsorption spectrum that is a range of the EM spectrum, includingwithout limitation, the visible spectrum, and/or a sub-range thereof. Insome non-limiting examples, employing an EM radiation-absorbing layer120 as part of a layered semiconductor device 100 may reduce reliance ona polarizer therein.

Those having ordinary skill in the relevant art will appreciate that insome non-limiting examples, a plurality of EM radiation-absorbing layers120 may be disposed on one another, whether or not separated byadditional layers, with varying lateral aspects and having differentabsorption spectra. In this fashion, the absorption of certain regionsof the device may be tuned according to one or more desired absorptionspectra.

While the EM radiation-absorbing layer 120 may absorb EM radiationincident thereon from beyond the layered semiconductor device 100, thusreducing reflection, those having ordinary skill in the relevant artwill appreciate that, in some non-limiting examples, the EMradiation-absorbing layer 120 may absorb EM radiation incident thereonthat is emitted by the device 100.

In some non-limiting examples, such as shown in FIG. 4A, the non-EMlayer patterning coating 210 _(n) may be deposited on the exposed layersurface 11, after deposition of the seeds 122 in the tem plating layer,if any, such that the seeds 122 may be deposited across both the firstportion 401 and the second portion 402, and the non-EM layer patterningcoating 210 _(n) may cover the seeds 122 deposited across the firstportion 401.

In some non-limiting examples, the non-EM layer patterning coating 210_(n) may provide a surface with a relatively low initial stickingprobability against the deposition, not only of the deposited material1231, but also of the seed material. In such examples, such as is shownin the example version 400 b of the device 100 in FIG. 4B, the non-EMlayer patterning coating 210 _(n) may be deposited before, not after,any deposition of the seed material.

After selective deposition of the non-EM layer patterning coating 210_(n) across the first portion 401, a conductive deposited material 1231may be deposited over the device 100, in some non-limiting examples,using an open mask and/or a mask-free deposition process, but may remainsubstantially only within the second portion 402, which may besubstantially devoid of the patterning coating 210, as, and/or to form,particle structures 121 therein, including without limitation, bycoalescing around respective seeds 122, if any, that are not covered bythe non-EM layer patterning coating 210 _(n).

After selective deposition of the non-EM layer patterning coating 210_(n) across the first portion 401, the seed material, if deposited, maybe deposited in the templating layer, across the exposed layer surface11 of the device 400, in some non-limiting examples, using an open maskand/or a mask-free deposition process, but the seeds 122 may remainsubstantially only within the second portion 402, which may besubstantially devoid of the non-EM layer patterning coating 210 _(n).

Further, the deposited material 1231 may be deposited across the exposedlayer surface 11 of the device 300, in some non-limiting examples, usingan open mask and/or a mask-free deposition process, but the depositedmaterial 1231 may remain substantially only within the second portion402, which may be substantially devoid of the non-EM layer patterningcoating 210 _(n), as and/or to form particle structures 121 therein,including without limitation, by coalescing around respective seeds 122.

The non-EM layer patterning coating 210 _(n) may provide, within thefirst portion 401, a surface with a relatively low initial stickingprobability against the deposition of the deposited material 1231 and/orthe seed material, if any, that may be substantially less than aninitial sticking probability against the deposition of the depositedmaterial 1231, and/or the seed material, if any, of the exposed layersurface 11 of the underlying layer of device 300 within the secondportion 402.

Thus, the first portion 401 may be substantially devoid of a closedcoating 1040 of any seeds 122 and/or of the deposited material 1231 thatmay be deposited within the second portion 402 to form the particlestructures 121, including without limitation, by coalescing around theseeds 122.

Those having ordinary skill in the relevant art will appreciate that,even if some of the deposited material 1231, and/or some of the seedmaterial, remains within the first portion 401, the amount of any suchdeposited material 1231, and/or seeds 122 formed of the seed material,in the first portion 401, may be substantially less than in the secondportion 402, and that any such deposited material 1231 in the firstportion 401 may tend to form a discontinuous layer 130 that may besubstantially devoid of particle structures 121. Even if some of suchdeposited material 1231 in the first portion 401 were to form a particlestructure 121, including without limitation, about a seed 122 formed ofthe seed material, the size, height, weight, thickness, shape, profile,and/or spacing of any such particle structures 121 may nevertheless besufficiently different from that of the particle structures 121 of theEM radiation-absorbing layer 120 of the second portion 402, thatabsorption of EM radiation in the first portion 401 may be substantiallyless than in the second portion 402, including without limitation, in awavelength range of the EM spectrum, including without limitation, thevisible spectrum, and/or a sub-range and/or wavelength thereof,including without limitation, corresponding to a specific colour.

In this fashion, the non-EM layer patterning coating 210 _(n) may beselectively deposited, including without limitation, using a shadow mask1115, to allow the deposited material 1231 to be deposited, includingwithout limitation, using an open mask and/or a mask-free depositionprocess, so as to form particle structures 121, including withoutlimitation, by coalescing around respective seeds 122.

Those having ordinary skill in the relevant art will appreciate thatstructures exhibiting relatively low reflectance may, in somenon-limiting examples, be suitable for providing an EMradiation-absorbing layer 120.

Display Panel

Turning now to FIG. 5 , there is shown a cross-sectional view of adisplay panel 510. In some non-limiting examples, the display panel 510may be a version of the layered semiconductor device 100, includingwithout limitation, the opto-electronic device 500, culminating with anoutermost layer that forms a face 501 thereof.

The face 501 of the display panel 510 may extend across a lateral aspectthereof, substantially along a plane defined by the lateral axes.

User Device

In some non-limiting examples, the face 501, and indeed, the entiredisplay panel 510, may act as a face of a user device 500 through whichat least one EM signal 531 may be exchanged therethrough at an anglerelative to the plane of the face 501. In some non-limiting examples,the user device 500 may be a computing device, such as, withoutlimitation, a smartphone, a tablet, a laptop, and/or an e-reader, and/orsome other electronic device, such as a monitor, a television set,and/or a smart device, including without limitation, an automotivedisplay and/or windshield, a household appliance, and/or a medical,commercial, and/or industrial device.

In some non-limiting examples, the face 501 may correspond to and/ormate with a body 520, and/or an opening 521 therewithin, within which atleast one under-display component 530 may be housed.

In some non-limiting examples, the at least one under-display component530 may be formed integrally, or as an assembled module, with thedisplay panel 510 on a surface thereof opposite to the face 501. In somenon-limiting examples, the at least one under-display component 530 maybe formed on an exposed layer surface 11 of the substrate 10 of thedisplay panel 510 opposite to the face 501.

In some non-limiting examples, at least one aperture 513 may be formedin the display panel 510 to allow for the exchange of at least one EMsignal 531 through the face 501 of the display panel 510, at an angle tothe plane defined by the lateral axes, or concomitantly, the layers ofthe display panel 510, including without limitation, the face 501 of thedisplay panel 510.

In some non-limiting examples, the at least one aperture 513 may beunderstood to comprise the absence and/or reduction in thickness and/oropacity of a substantially opaque coating otherwise disposed across thedisplay panel 510. In some non-limiting examples, the at least oneaperture 513 may be embodied as a signal transmissive region 620 asdescribed herein.

However the at least one aperture 513 is embodied, the at least one EMsignal 531 may pass therethrough such that it passes through the face501. As a result, the at least one EM signal 531 may be considered toexclude any EM radiation that may extend along the plane defined by thelateral axes, including without limitation, any electric current thatmay be conducted across an EM radiation-absorbing layer 120 laterallyacross the display panel 510.

Further, those having ordinary skill in the relevant art will appreciatethat the at least one EM signal 531 may be differentiated from EMradiation per se, including without limitation, electric current, and/oran electric field generated thereby, in that the at least one EM signal531 may convey, either alone, or in conjunction with other EM signals531, some information content, including without limitation, anidentifier by which the at least one EM signal 531 may be distinguishedfrom other EM signals 531. In some non-limiting examples, theinformation content may be conveyed by specifying, altering, and/ormodulating at least one of the wavelength, frequency, phase, timing,bandwidth, resistance, capacitance, impedance, conductance, and/or othercharacteristic of the at least one EM signal 531.

In some non-limiting examples, the at least one EM signal 531 passingthrough the at least one aperture 513 of the display panel 510 maycomprise at least one photon and, in some non-limiting examples, mayhave a wavelength spectrum that lies, without limitation, within atleast one of the visible spectrum, the IR spectrum, and/or the NIRspectrum. In some non-limiting examples, the at least one EM signal 531passing through the at least one aperture 513 of the display panel 510may have a wavelength that lies, without limitation, within the IRand/or NR spectrum.

In some non-limiting examples, the at least one EM signal 531 passingthrough the at least one aperture 513 of the display panel 510 maycomprise ambient light incident thereon.

In some non-limiting examples, the at least one EM signal 531 exchangedthrough the at least one aperture 513 of the display panel 510 may betransmitted and/or received by the at least one under-display component531.

In some non-limiting examples, the at least one under-display component530 may have a size that is greater than a single light transmissiveregion 620, but may underlie not only a plurality thereof but also atleast one emissive region 610 extending therebetween. Similarly, in somenon-limiting examples, the at least one under-display component 531 mayhave a size that is greater than a single one of the at least oneapertures 513.

In some non-limiting examples, the at least one under-display component530 may comprise a receiver 530 _(r) adapted to receive and process atleast one received EM signal 531 _(r) passing through the at least oneaperture 513 from beyond the user device 500. Non-limiting examples ofsuch receiver 530 _(r) include an under-display camera (UDC), and/or asensor, including without limitation, an IR sensor or detector, an NIRsensor or detector, a LIDAR sensing module, a fingerprint sensingmodule, an optical sensing module, an IR (proximity) sensing module, aniris recognition sensing module, and/or a facial recognition sensingmodule, and/or a part thereof.

In some non-limiting examples, the at least one under-display component530 may comprise a transmitter 5301 adapted to emit at least onetransmitted EM signal 531 _(t) passing through the at least one aperture513 beyond the user device 500. Non-limiting examples of suchtransmitter 5301 include a source of EM radiation, including withoutlimitation, a built-in flash, a flashlight, an IR emitter, and/or an NIRemitter, and/or a LIDAR sensing module, a fingerprint sensing module, anoptical sensing module, an IR (proximity) sensing module, an irisrecognition sensing module, and/or a facial recognition sensing module,and/or a part thereof.

In some non-limiting examples, the at least one EM signal 531 passingthrough the at least one aperture 513 of the display panel 510 beyondthe user device 500, including without limitation, those transmitted EMsignals 531 _(t) emitted by the at least one under-display component 530that comprises a transmitter 530 _(t), may emanate from the displaypanel 510, and pass back as emitted EM signals 531 _(r) through the atleast one aperture 513 of the display panel 510 to at least oneunder-display component 530 that comprises a receiver 530 _(r).

In some non-limiting examples, the under-display component 530 maycomprise an IR emitter and an IR sensor. By way of non-limiting example,such under-display component 530 may comprise, as a part, component ormodule thereof: a dot matrix projector, a time-of-flight (ToF) sensormodule, which may operate as a direct ToF and/or indirect ToF, VCSEL,flood illuminator, NIR imager, folded optics, and diffractive grating.

In some non-limiting examples, there may be a plurality of under-displaycomponents 530 within the user device 500, a first one of whichcomprises a transmitter 530 _(t) for emitting at least one transmittedEM signal 531 _(t) to pass through the at least one aperture 513, beyondthe user device 500, and a second one of which comprises a receiver 530_(r), for receiving at least one received EM signal 531 _(r). In somenon-limiting examples, such transmitter 530 _(t) and receiver 530 _(r)may be embodied in a single, common under-display component 530.

This may be seen by way of non-limiting example in FIG. 6A, in which theuser device 500 is shown as having a display panel 510 that comprises,in a lateral extent (shown vertically in the figure), at least onedisplay part 615 adjacent and in some non-limiting examples, separatedby at least one signal-exchanging display part 616. The user device 500houses at least one transmitter 530 _(t) for transmitting at least onetransmitted EM signal 531 _(t) through at least one first signaltransmissive region 620 in the first signal-exchanging display part 620beyond the face 501, as well as a receiver 530 _(r) for receiving atleast one received EM signal 531 _(r), through at least one secondsignal transmissive region 620 in the second signal-exchanging displaypart 616. In some non-limiting examples, the at least one first andsecond signal-exchanging display part 616 may be the same.

FIG. 6B, which shows a plan view of the user device 500 according to anon-limiting example, which includes a display panel 510 defining a faceof the device. The device 500 houses the least one transmitter 530 _(t)and the at least one receiver 530 _(r) arranged beyond the face 501.FIG. 6C shows the cross-sectional view taken along the line 6C-6C of thedevice 500.

The display panel 510 includes a display part 615 and asignal-exchanging display part 616. The display part 615 includes aplurality of emissive regions 610. The signal-exchanging display part616 includes a plurality of emissive regions 610 and a plurality ofsignal transmissive regions 620. The plurality of emissive regions 610in the display part 615 and the signal-exchanging display part 616correspond to sub-pixels 264 x of the display panel 510. The pluralityof signal transmissive regions 620 in the signal-exchanging display part616 is configured to allow signal or light having a wavelengthcorresponding to IR range of the electromagnetic spectrum to passthrough the entirety of a cross-sectional aspect thereof. The at leastone transmitter 530 _(t) and the at least one receiver 530 _(r) arearranged behind the corresponding signal-exchanging display part 616,such that IR signal is emitted and received, respectively, by passingthrough the signal-exchanging display part 616 of the panel 510. In theillustrated non-limiting example, each of the at least one transmitter530 _(t) and the at least one receiver 530 _(r) is shown as having acorresponding signal-exchanging display part 616 disposed in the path ofthe signal transmission.

FIG. 6D shows a plan view of the user device 500 according to anothernon-limiting example, wherein at least one transmitter 5301 and the atleast one receiver 530 _(r) are both arranged behind a commonsignal-exchanging display part 616. By way of non-limiting example, thesignal-exchanging display part 616 may be elongated along at least oneconfiguration axis in the plan view, such that it extends over both thetransmitter 5301 and the receiver 530 _(r). FIG. 6E shows across-sectional view taken along the line X2-X2 in FIG. 6D.

FIG. 6F shows a plan view of the user device 500 according to yetanother non-limiting example, wherein the display panel 510 furtherincludes a non-display part 551. More specifically, the display panel510 includes the at least one transmitter 530 _(t) and the at least onereceiver 530 _(r), each of which is arranged behind the correspondingsignal-exchanging display part 616. The non-display part 551 isarranged, in plan view, adjacent to and between the twosignal-exchanging display parts 516. The non-display part 551 generallyomits the presence of any light-emissive regions. In some non-limitingexamples, the device 500 houses a camera 540 arranged in the non-displaypart 551. In some non-limiting examples, the non-display part 551includes a through-hole part 552 which is arranged to overlap with thecamera 540. The panel 510 in the through-hole part 552 may omit thepresence of one or more layers, coatings, and/or components which arepresent in the display part 615 and/or the signal-exchanging displaypart 616. By way of non-limiting example, the panel 510 in thethrough-hole part 552 may omit the presence of one or more backplaneand/or frontplane components, the presence of which may otherwiseinterfere with the image captured by the camera 540. In somenon-limiting examples, the cover glass of the panel 510 extendssubstantially across the display part 615, the signal-exchanging displaypart 616, and the through-hole part 552 such that it is present in allof the foregoing parts of the panel 510. In some non-limiting examples,the panel 510 further includes a polarizer (not shown), which may extendsubstantially across the display part 615, the signal-exchanging displaypart 616, and the through-hole part 552 such that it is present in allof the foregoing parts of the panel 510. In some non-limiting examples,the presence of the polarizer may be omitted in the through-hole part552 to enhance the transmission of light through such part of the panel510.

In some non-limiting examples, the non-display part 551 of the panel 510further includes a non-through-hole part 553. By way of non-limitingexample, the non-through-hole part 553 may be arranged between thethrough-hole part 552 and the signal-exchanging display part 616 in theplan view. In some non-limiting examples, the non-through-hole part 553may surround at least a part of, or the entirety of the perimeter of thethrough-hole part 552. While not specifically shown, the device 500 mayinclude additional modules, components, and/or sensors in the part ofthe device 500 corresponding to the non-through-hole part 553 of thedisplay panel 510.

In some non-limiting examples, the signal-exchanging display part 616may have reduced, or substantially omit, the presence of the backplanecomponents which would otherwise hinder or reduce transmission of lightthrough the signal-exchanging display part 616. By way of non-limitingexample, the signal-exchanging display part 616 may omit the presence ofTFT structure 501 and/or TFT components, including but not limited to:metal trace lines, capacitors, and/or other opaque or light-absorbingelements. In some non-limiting examples, the light emissive regions 610in the signal-exchanging display part 616 may be electrically coupled toone or more TFT structures and/or TFT components located in thenon-through-hole part 553 of the non-display part 551. Specifically, theTFT structures and/or TFT components for actuating the sub-pixels in thesignal-exchanging display part 616 may be relocated outside of thesignal-exchanging display part 616 and within the non-through-hole part553 of the panel 510, such that a relatively high transmission of light,at least in the IR and/or NIR wavelength range, through the non-emissiveareas within the signal-exchanging display part 616 may be attained. Byway of non-limiting example, the TFT structures and/or TFT components inthe non-through-hole part 553 may be electrically coupled to sub-pixelsin the signal-exchanging display part 616 via conductive trace(s). Insome non-limiting examples, the transmitter 530 _(t) and the receiver530 _(r) are arranged adjacent to or proximal to the non-through-holepart 553 in the plan view, such that the distance over which currenttravels between the TFT structures and/or TFT components and thesub-pixels is reduced.

In some non-limiting examples, the light emissive regions 610 areconfigured such that at least one of an aperture ratio and a pixeldensity of the light emissive regions is the same between the displaypart 615 and the signal-exchanging display part 616. In somenon-limiting examples, the light emissive regions 610 are configuredsuch that both the aperture ratio and the pixel density of the lightemissive regions is the same between the display part 615 and thesignal-exchanging display part 616. In some non-limiting examples, thepixel density may be greater than about 300 ppi, 350 ppi, 400 ppi, 450ppi, 500 ppi, 550 ppi, or 600 ppi. In some non-limiting examples, theaperture ratio may be greater than about 25%, 27%, 30%, 33%, 35%, or40%. In some non-limiting examples, the light emissive regions 610 orpixels of the panel 510 may be substantially identically shaped andarranged between the display part 615 and the signal-exchanging displaypart 616 to reduce the likelihood of a user detecting visual differencesbetween the display part 615 and the signal-exchanging display part 616of the panel 100.

FIG. 6H shows a magnified plan view of portions of the panel 510according to a non-limiting example. Specifically, the configuration andlayout of emissive regions 610, which are represented as subpixels 264x, in the display part 615 and the signal-exchanging display part 616 isshown. In each part, a plurality of emissive regions 610 is provided,each corresponding to a sub-pixel 264 x. In some non-limiting examples,the sub-pixels 264 x may correspond to, respectively, R(ed) sub-pixels2641, G(reen) sub-pixels 2642 and/or B(lue) sub-pixels 2643. In thesignal-exchanging display part 616, a plurality of signal transmissiveregions 620 is provided between adjacent sub-pixels 264 x.

In FIG. 6H, the between the display part 615 and signal-exchangingdisplay part 616 is indicated by the wavey break lines. In somenon-limiting examples, the display panel 510 further includes atransition region (not shown) between the display part 615 and thesignal-exchanging display part 616 wherein the configuration of theemissive regions 610 and/or signal transmissive regions 620 may differfrom those of the adjacent display part 615 and/or the signal-exchangingdisplay part 616. In some non-limiting examples, the presence of suchtransition region may be omitted such that the emissive regions 610 areprovided in a substantially continuous repeating pattern across thedisplay part 615 and the signal-exchanging display part 616.

Although not shown, in some non-limiting examples, a thickness of pixeldefinition layers (PDLs) 740 (FIG. 7 ) in the at least one signaltransmissive region 620, in some non-limiting examples, at least in aregion laterally spaced apart from neighbouring emissive regions 610,and in some non-limiting examples, of the TFT insulating layer 709 (FIG.7 ), may be reduced in order to enhance a transmittivity and/or atransmittivity angle relative to and through the layers of the face 501.

As shown in FIG. 7A, which is a simplified block diagram of an exampleversion 700 _(a) of the user device 500, in some non-limiting examples,a lateral aspect 1610 (FIG. 7 ) of at least one emissive region 610 mayextend across and include at least one TFT structure 701 (FIG. 7 )associated therewith for driving the emissive region 610 along dataand/or scan lines (not shown), which, in some non-limiting examples, maybe formed of copper (Cu) and/or a transparent conducting oxide (TCO).

In some non-limiting examples, the at least one received EM signal 531 rincludes at least a fragment of the at least one transmitted EM signal531 _(t), which is reflected off, or otherwise returned by, an externalsurface to the user device 500.

In some non-limiting examples, the user device 500 is configured tocause the at least one transmitter 530 _(t) to emit the at least onetransmitted EM signal 531 _(t) and pass through the display panel 510such that it is incident on a face, profile or other part of a user 60of the user device 500. A fragment of the at least one transmitted EMsignal 531 _(t) incident upon the user 60 is reflected off, or otherwisereturned by, the user 60 to generate the at least one received EM signal531 _(r), which in turn passes through the display panel 510 such thatit is received and/or detected by the at least one receiver 530 _(r).

In some non-limiting examples, by causing the at least one transmitter530 _(t) to generate at least one transmitted EM signal 531 _(t) to bereflected off the user 60 to generate the at least one received EMsignal 531 _(r) associated therewith (collectively an EM signal pair531), which is detected by the at least one receiver 530 _(r), therebyproviding biometric authentication of the user 60.

In some non-limiting examples, the at least one transmitter 530 _(t) maybe an IR emitter for emitting at least one EM signal 531, having awavelength range in the IR spectrum and/or the NIR spectrum, as the atleast one transmitted IR signal 531 _(t). In some non-limiting examples,the at least one receiver 530 _(r) may be an IR sensor for receiving atleast one EM signal 531, having a wavelength in the IR spectrum and/orthe NIR spectrum, as the at least one received IR signal 531 _(r).

In some non-limiting examples, the signal transmissive regions 620 ofthe display panel 510 are arranged in an array, and the at least onetransmitter 530 _(t) and/or the at least one receiver 530 _(r) arepositioned within the user device 500 behind the display panel 510 suchthat at least one EM signal pair 531 associated therewith is configuredto pass through at least one signal transmissive region 620 of thedisplay panel 510.

In some non-limiting examples, the at least one transmitter 530 _(t) andthe at least one receiver 530 _(r) are positioned to allow the at leastone EM signal pair 531 associated therewith to pass through a commonsignal transmissive region 620. In some non-limiting examples, the atleast one transmitter 530 _(t) and the at least one receiver 530 _(r)are positioned to allow the at least one EM signal pair 531 associatedtherewith to pass through different signal transmissive regions 620.

In the display panel 510, at least one emissive region 610 may haveassociated therewith, a second portion 402 of the lateral aspect of thedisplay panel 510, in which an exposed layer surface 11 of an underlyinglayer thereof may have deposited thereon, a closed coating 1040 of thedeposited material 1231.

In the display panel 510, at least one signal transmissive region 620may have associated therewith, a first portion 401 of the lateral aspectof the display panel 510, in which an EM layer patterning coating 210_(e) may be disposed on an exposed layer surface 11 of an underlyinglayer, and the exposed layer surface 11 of which, has disposed thereon,an EM radiation-absorbing layer 120 comprising a discontinuous layer 130of at least one particle structure 121.

In some non-limiting examples, the at least one signal transmissiveregion 620 may be substantially devoid of a closed coating 1040 of thedeposited material 1231.

In some non-limiting examples, the at least one signal transmissiveregion 620 may facilitate EM radiation absorption therein in at least awavelength range of the visible spectrum, while allowing EM radiationtherethrough in at least a wavelength range of the IR spectrum.

This allows the at least one transmitted IR signal 531 _(t) and the atleast one received IR signal 531 _(r) to be transmitted therethrough, atleast to the extent that they lie in the IR spectrum, while absorbing atleast a part of these (or other) EM signals 531 to the extent that theylie in the visible spectrum, including EM signals 531 (not shown) in atleast a wavelength range of the visible spectrum that may be incidentfrom an external source upon the display panel 510.

In this way, the presence of the IR emitter 530 _(t) and the IR detector530 _(r) may at least partially be concealed from the user 60 withoutsubstantially impeding the at least one transmitted IR signal 531 _(t)and the at least one received IR signal 531 _(r) from being transmittedthrough the display panel 510, including without limitation, to providebiometric authentication of the user 60.

Such configuration of the display panel 510 may be advantageous, forexample to allow the IR emitter 530 _(t) and/or the IR detector 530 _(r)to be positioned within the user device 500 and the at least one signaltransmissive regions 620 to be positioned within the lateral extent ofthe display panel 510, without substantially detracting from the userexperience, and/or to facilitate concealment of the IR emitter 530 _(t)and/or the IR detector 530 _(r) from the user 60.

Those having ordinary skill in the relevant art will appreciate that, insome non-limiting examples, the at least one under-display component530, including without limitation, the IR emitter 530 _(t) and/or the IRdetector 530 _(r), may be of a size so as to underlie not only a singlesignal transmissive region 620, but a plurality of signal transmissiveregions 620, and/or at least one emissive region 610 extendingtherebetween. In such examples, the at least one under-display component530 may be positioned under such plurality of signal transmissiveregions 620 and may exchange EM signals 531 passing at an angle relativeto and through the layers of the display panel 510 through suchplurality of signal transmissive regions 620.

In some non-limiting examples, in at least a part of the emissive region610, the at least one semiconducting layer 1530 may be deposited overthe exposed layer surface 11 of the face 501, which in some non-limitingexamples, comprise the first electrode 1520.

In some non-limiting examples, the exposed layer surface 11 of the face501, which may, in some non-limiting examples, comprise the at least onesemiconducting layer 1530, may be exposed to an evaporated flux 1112(FIG. 11 ) of the patterning material 1111, including withoutlimitation, using a shadow mask 1115, to form a patterning coating 210in the first portion 401. Whether or not a shadow mask 1115 is employed,the patterning coating 210 may be restricted, in its lateral aspect,substantially to the signal transmissive region(s) 620.

In some non-limiting examples, the exposed layer surface 11 of the face501 may be exposed to a vapor flux 1232 of the deposited material 1231,including without limitation, in an open mask and/or mask-freedeposition process.

In some non-limiting examples, the exposed layer surface 11 of the face501 within the lateral aspect 1620 (FIG. 7 ) of the at least one signaltransmissive region 620, may comprise the patterning coating 210.Accordingly, within the lateral aspect 1620 of the at least one signaltransmissive region(s) 620, the vapor flux 1232 of the depositedmaterial 1231 incident on the exposed layer surface 11, may form atleast one particle structure 121, on the exposed layer surface 11 of thepatterning coating 210, as the EM radiation-absorbing layer 120. In somenon-limiting examples, a surface coverage of the EM radiation-absorbinglayer 120 may be no more than at least one of about: 70%, 60%, 50%, 40%,30%, 25%, 20%, 15%, or 10%.

At the same time, because the patterning coating 210 has beenrestricted, in its lateral aspect, substantially to the non-emissiveregions 1902 (FIG. 19A), in some non-limiting examples, the exposedlayer surface 11 of the face 610 within the lateral aspect 1610 of theemissive region(s) 610 may comprise the at least one semiconductinglayer 1530. Accordingly, within the second portion 402 of the lateralaspect 1610 of the at least one emissive region 610, the vapor flux 1232of the deposited material 1231 incident on the exposed layer surface 11,may form a closed coating 1040 of the deposited material 1231 as thesecond electrode 1540.

Thus, in some non-limiting examples, the patterning coating 210 mayserve dual purposes, namely as an EM layer patterning coating 210 _(e)to provide a base for the deposition of the EM layer radiation-absorbinglayer 120 in the first portion 401, and as a non-EM layer patterningcoating 210 _(n) to restrict the lateral extent of the deposition of thedeposited material 1231 as the second electrode 1540 to the secondportion 402, without employing a shadow mask 1115 during the depositionof the deposited material 1231.

In some non-limiting examples, an average film thickness of the closedcoating 1040 of the deposited material 1231 may be at least one of atleast about: 5 nm, 6 nm, or 8 nm. In some non-limiting examples, thedeposited material 1231 may comprise MgAg.

In some non-limiting examples, the second electrode 1520 may extendpartially over the patterning coating 210 in a transition region (FIG.7A).

Details of the EM Radiation-Absorbing Layer

In some non-limiting examples, the EM radiation-absorbing layer 120 maycomprise at least one particle structure 121 deposited over the EM layerpatterning coating 210 _(e), including without limitation, using amask-free and/or open mask deposition process.

Without wishing to be limited to any particular theory, it may bepostulated that, while the formation of a closed coating 1040 of thedeposited material 1231 thereon may be substantially inhibited on the EMlayer patterning coating 210 _(e), in some non-limiting examples, whenthe EM layer patterning coating 210 _(e) is exposed to deposition of thedeposited material 1231 thereon, some vapor monomers 1232 of thedeposited material 1231 may ultimately form at least one particlestructure 121 of the deposited material 1231 thereon.

Accordingly, the EM radiation-absorbing layer 120 may comprise, in somenon-limiting examples, a discontinuous layer 130, in some non-limitingexamples, that comprises at least one particle structure 121 of thedeposited material 1231. In some non-limiting examples, at least some ofthe particle structures 121 may be disconnected from one another. Inother words, in some non-limiting examples, the discontinuous coating130 may comprise features, including particle structures 121, that maybe physically separated from one another, such that the EMradiation-absorbing layer 120 does not form a closed coating 1040.

Such EM radiation-absorbing layer 120 may, in some non-limitingexamples, thus comprise a thin disperse layer of deposited material 1231formed as particle structures 121, inserted at, and substantially acrossthe lateral extent of, an interface between the EM layer patterningcoating 210 _(e) and at least one covering layer 710 (FIG. 7A) in thedisplay panel 510.

In some non-limiting examples, at least one of the particle structures121 of deposited material 1231 in the EM radiation-absorbing layer 120may be in physical contact with an exposed layer surface 11 of the EMlayer patterning coating 210 _(e). In some non-limiting examples,substantially all of the particle structures 121 of deposited material1231 in the EM radiation-absorbing layer 120, may be in physical contactwith the exposed layer surface 11 of the EM layer patterning coating 210_(e).

Without withing to be bound by any particular theory, it has been found,somewhat surprisingly, that the presence of such a thin, disperse EMradiation-absorbing layer 120 of deposited material 1231, includingwithout limitation, at least one particle structure 121, includingwithout limitation metal particle structures 121, including withoutlimitation, in a discontinuous layer 130, on an exposed layer surface 11of the EM layer patterning coating 210 _(e), may exhibit one or morevaried characteristics and concomitantly, varied behaviors, includingwithout limitation, optical effects and properties of the display panel510, as discussed herein. In some non-limiting examples, such effectsand properties may be controlled to some extent by judicious selectionof at least one of: the characteristic size, size distribution, shape,surface coverage, configuration, deposited density, and/or dispersity ofthe particle structures 121 on the EM layer patterning coating 210 _(e).

In some non-limiting examples, the formation of at least one of: thecharacteristic size, size distribution, shape, surface coverage,configuration, deposited density, and/or dispersity of such EMradiation-absorbing layer 120 may be controlled, in some non-limitingexamples, by judicious selection of at least one of: at least onecharacteristic of the patterning material 1111, an average filmthickness of the EM layer patterning coating 210 _(e), the introductionof heterogeneities in the EM layer patterning coating 210 _(e), and/or adeposition environment, including without limitation, a temperature,pressure, duration, deposition rate, and/or deposition process for thepatterning material 1111 of the EM layer patterning coating 210 _(e).

In some non-limiting examples, the formation of at least one of thecharacteristic size, size distribution, shape, surface coverage,configuration, deposited density, and/or dispersity of such EMradiation-absorbing layer 120 may be controlled, in some non-limitingexamples, by judicious selection of at least one of: at least onecharacteristic of the deposited material 1231, an extent to which the EMlayer patterning coating 210 _(e) may be exposed to deposition of thedeposited material 1231 (which, in some non-limiting examples may bespecified in terms of a thickness of the corresponding discontinuouslayer 130), and/or a deposition environment, including withoutlimitation, a temperature, pressure, duration, deposition rate, and/ormethod of deposition for the deposited material 1231.

In some non-limiting examples, the at least one particle structures 121of the EM radiation-absorbing layer 120 may be provided such that theyexhibit greater absorption in at least a wavelength sub-range of thevisible spectrum than in the IR and/or NIR spectrum. In somenon-limiting examples, the at least one particle structures 121 of theEM radiation-absorbing layer 120 may be provided such that they absorbEM radiation in at least a wavelength sub-range of the visible spectrumand do not substantially absorb EM radiation in the IR and/or NIRspectrum.

In some non-limiting examples, the EM radiation-absorbing layer 120 ofdeposited material 1231, including without limitation, at least oneparticle structure 120, may comprise, and/or act as, a UVA-absorbingcoating 120 that may generally absorb EM radiation in the UVA spectrum.

In some non-limiting examples, there may be a benefit to provide such aUVA-absorbing coating 120 to reduce and/or mitigate transmission of UVAradiation through the display panel 510. By way of non-limiting example,the presence of such UVA-absorbing coating 120 may enhance an imagequality captured by an under-display component 530 through the displaypanel 510, by reducing interference caused by UVA radiation.

In some non-limiting examples, the EM radiation-absorbing layer 120 mayabsorb EM radiation in at least a part of the UV spectrum and at least apart of the visible spectrum, while exhibiting reduced and/orsubstantially no absorption of EM radiation in the IR and/or NIRspectrum.

In some non-limiting examples, the optical effects may be described interms of its impact on the transmission, and/or absorption wavelengthspectrum, including a wavelength range, and/or peak intensity thereof.

Additionally, while the model presented may suggest certain effectsimparted on the transmission, and/or absorption of EM radiation passingthrough such EM radiation-absorbing layer 120, in some non-limitingexamples, such effects may reflect local effects that may not bereflected on a broad, observable basis.

In some non-limiting examples, the characteristic size of the particlestructures 121 in (an observation window used, of) the EMradiation-absorbing layer 120 may reflect a statistical distribution.

In some non-limiting examples, an absorption spectrum intensity may tendto be proportional to a deposited density of the EM radiation-absorbinglayer 120, for a particular distribution of the characteristic size ofthe particle structures 121.

In some non-limiting examples, the characteristic size of the particlestructures 121 in (an observation window used, of) the EMradiation-absorbing layer 120, may be concentrated about a single value,and/or in a relatively narrow range.

In some non-limiting examples, the characteristic size of the particlestructures 121 in (an observation window used, of) the EMradiation-absorbing layer 120, ma be concentrated about at least onevalue, and/or in at least one relatively narrow range. By way ofnon-limiting example, the particle structures of the EMradiation-absorbing layer 120, may exhibit such multi-modal behavior inwhich there are a plurality of different values and/or ranges aboutwhich the characteristic size of the particle structures 121 in (anobservation window used, of) the EM radiation-absorbing layer 120, maybe concentrated.

In some non-limiting examples, the EM radiation-absorbing layer 120 maycomprise a first at least one particle structure 121 ₁, having a firstrange of characteristic sizes, and a second at least one particlestructure 121 ₂, having a second range of characteristic sizes. In somenon-limiting examples, the first range of characteristic sizes maycorrespond to sizes of no more than about 50 nm, and the second range ofcharacteristic sizes may correspond to sizes of at least 50 nm. By wayof non-limiting example, the first range of characteristic sizes maycorrespond to sizes of between about 1-49 nm and the second range ofcharacteristic sizes may correspond to sizes of between about 50-300 nm.In some non-limiting examples, a majority of the first particlestructures 121 ₁ may have a characteristic size in a range of at leastone of between about: 10-40 nm, 5-30 nm, 10-30 nm, 15-35 nm, 20-35 nm,or 25-35 nm. In some non-limiting examples, a majority of the secondparticle structures 121 ₂ may have a characteristic size in a range ofat least one of between about: 50-250 nm, 50-200 nm, 60-150 nm, 60-100nm, or 60-90 nm. In some non-limiting examples, the first particlestructures 121 ₁ and the second particle structures 121 ₂ may beinterspersed with one another.

A series of five samples was fabricated to study the formation of suchmulti-modal particle structures 121. Each sample was prepared bydepositing, on a glass substrate, an approximately 20 nm thick organicsemiconducting layer 1530, followed by an approximately 34 nm thick Aglayer, followed by an approximately 30 nm thick EM layer patterningcoating 210 _(e), then subjecting the surface of the EM layer patterningcoating 210 _(e) to a vapor flux 1232 of Ag. SEM images of each samplewere taken at various magnifications.

FIG. 8A shows a SEM image 800 of a first sample and a further SEM image805 at increased magnification. As may be seen from the image 800, thereare a number of first particle structures 121 ₁ that may tend to beconcentrated about a first, small, characteristic size, and a smallernumber of second particle structures 121 ₂ that may tend to beconcentrated about a second, larger, characteristic size. A plot 810, ofa count of particle structures 121 as a function of characteristicparticle size, may show that a majority of the first particle structures121 ₁ may be concentrated around about 30 nm. Analysis shows that asurface coverage of the observation window of the image 800, of thefirst particle structures 121 ₁ having a characteristic size that is nomore than about 50 nm was about 38%, whereas a surface coverage of theobservation window of the image 800, of the second particle structures121 ₂, having a characteristic size that is at least about 50 nm wasabout 1%.

FIG. 8B shows a SEM image 820 of a second sample and a further SEM image825 at increased magnification. As may be seen from the image 820, whilethere continue to be a number of first particle structures 121 ₁ thatmay tend to be concentrated about the first characteristic size, anumber of second particle structures 121 ₂ that may tend to beconcentrated about the second characteristic size may be greater.Further, such second particle structures 121 ₂ may tend to be morenoticeable. A plot 830, of a count of particle structures 121 as afunction of characteristic particle size, may show two discerniblepeaks, a large peak of first particle structures 121 ₁ concentratedaround about 30 nm and a smaller peak of second particles 121 ₂concentrated around about 75 nm. Analysis shows that a surface coverageof the observation window of the image 820, of the first particlestructures 121 ₁ having a characteristic size that is no more than about50 nm was about 23%, whereas a surface coverage of the observationwindow of the image 820, of the second particle structures 121 ₂ havinga characteristic size that is at least about 50 nm was about 10%.

FIG. 8C shows a SEM image 840 of a third sample and a further SEM image845 at increased magnification. As may be seen from the image 840, whilethere continue to be a number of first particle structures 121 ₁ thatmay tend to be concentrated about the first characteristic size, anumber of second particle structures 121 ₂ that may tend to beconcentrated about the second characteristic size may be even greaterthan in the second sample A plot 850, of a count of particle structures121 as a function of characteristic particle size, may show twodiscernible peaks, a large peak of first particle structures 121 ₁concentrated around about 30 nm, and a smaller (but larger than shown inthe plot 830) peak of second particle structures 121 ₂ concentratedaround about 75 nm. Analysis shows that a surface coverage of theobservation window of the image 840, of the first particle structures121 ₁ having a characteristic size that is no more than about 50 nm wasabout 19%, whereas a surface coverage of the observation window of theimage 840, of the second particle structures 121 ₂ having acharacteristic size that is at least about 50 nm was about 21%.

FIG. 8D shows a SEM image 860 of a fourth sample and a further SEM image865 at increased magnification. As may be seen from the image 860, whilethere continue to be a number of first particle structures 121 ₁ thatmay tend to be concentrated about the first characteristic size, anumber of second particle structures 121 ₂ that may tend to beconcentrated about the second characteristic size may be greater. A plot870, of a count of particle structures 121 as a function ofcharacteristic particle size, may show two discernible peaks, a largepeak of first particle structures 121 ₁ concentrated around about 20 nmand a smaller peak of second particle structures 121 ₂ concentratedaround about 85 nm. Analysis shows that a surface coverage of theobservation window of the image 860, of the first particle structures121 ₁ having a characteristic size that is no more than about 50 nm wasabout 14%, whereas a surface coverage of the observation window of theimage 860, of the second particle structures 121 ₂ having acharacteristic size that is at least about 50 nm was about 34%.

FIG. 8E shows a SEM image 880 of a fifth sample and a further SEM image885 at increased magnification. As may be seen from the image 880, whilethere continue to be a number of first particle structures 121 ₁ thatmay tend to be concentrated about the first characteristic size, anumber of second particle structures 121 ₂ that may tend to beconcentrated about the second characteristic size may be greater.Indeed, the second particle structures 121 ₂ may tend to predominate. Aplot 890 of a count of particle structures 121 as a function ofcharacteristic particle size, shows two discernible peaks, a large peakof first particle structures 121 ₁ concentrated around about 15 nm and asmaller peak of second particle structures 121 ₂ concentrated aboutaround 85 nm. Analysis shows that a surface coverage of the observationwindow of the image 880, of the first particle structures 121 ₁ having acharacteristic size that is no more than about 50 nm was about 3%,whereas a surface coverage of the observation window of the image 880,of the second particle structure 121 ₂ having a characteristic size thatis at least about 50 nm was about 55%.

Without wishing to be limited to any particular theory, it may bepostulated that, in some non-limiting examples, such multi-modalbehaviour of the EM radiation-absorbing layer 120 may be produced byintroducing a plurality of nucleation sites for the deposited material1231 within the EM layer patterning coating 210 _(e), including withoutlimitation, by doping, covering, and/or supplementing the patterningmaterial 1111 with another material that may act as a seed orheterogeneity that may act as such a nucleation site. In somenon-limiting examples, it may be postulated that first particlestructures 121 ₁ of the first characteristic size may tend to form onthe EM layer patterning coating 210 _(e) where there may besubstantially no such nucleation sites, and that second particlestructures 121 ₂ of the second characteristic size may tend to form atthe locations of such nucleation sites.

Those having ordinary skill in the relevant art will appreciate thatthere may be other mechanisms by which such multi-modal behaviours maybe produced.

The foregoing also assumes, as a simplifying assumption, that the NPsmodelling each particle structure 121 may have a perfectly sphericalshape. Typically, the shape of particle structures 121 in (anobservation window used, of) the EM radiation-absorbing layer 120 may behighly dependent upon the deposition process. In some non-limitingexamples, a shape of the particle structures 121 may have a significantimpact on the SP excitation exhibited thereby, including withoutlimitation, on a width, wavelength range, and/or intensity of aresonance band, and concomitantly, an absorption band thereof.

In some non-limiting examples, material surrounding the EMradiation-absorbing layer 120, whether underlying it (such that theparticle structures 121 may be deposited onto the exposed layer surface11 thereof) or subsequently disposed on an exposed layer surface 11 ofthe EM radiation-absorbing layer 120, may impact the optical effectsgenerated by the emission and/or transmission of EM radiation and/or EMsignals 531 through the EM radiation-absorbing layer 120.

It may be postulated that disposing the EM radiation-absorbing layer 120containing the particle structures 121 on, and/or in physical contactwith, and/or proximate to, an exposed layer surface 11 of an EM layerpatterning coating 210 _(e) that may be comprised of a material having alow refractive index may, in some non-limiting examples, shift anabsorption spectrum of the EM radiation-absorbing layer 120.

Since the EM radiation-absorbing layer 120 may be arranged to be on,and/or in physical contact with, and/or proximate to, the EMradiation-absorbing layer 120, the display panel 510 may be configuredsuch that an absorption spectrum of the EM radiation-absorbing layer 120may be tuned and/or modified, due to the presence of the EMradiation-absorbing layer 120, including without limitation such thatsuch absorption spectrum may substantially overlap and/or may notoverlap with at least a wavelength range of the EM spectrum, includingwithout limitation, the visible spectrum, the UV spectrum, and/or the IRspectrum.

In some non-limiting examples, the EM layer patterning coating 210 _(e),and/or the patterning material 1111, in some non-limiting examples, whendeposited as a film, and/or coating in a form, and under similarcircumstances to the deposition of the EM layer patterning coating 210_(e) within the display panel 510, may have a first surface energy thatmay no more than a second surface energy of the deposited material 1231,in some non-limiting examples, when deposited as a film, and/or coatingin a form, and under similar circumstances to the deposition of the EMradiation-absorbing layer 120, within the display panel 510.

In some non-limiting examples, a quotient of the second surfaceenergy/the first surface energy may be at least one of at least about:1, 5, 10, or 20.

In some non-limiting examples, a surface coverage of an area of the EMlayer patterning coating 210 by the at least one particle structures 121deposited thereon, may be no more than a maximum threshold percentagecoverage.

In some non-limiting examples, the particle structures 121, in thecontext of permitting the transmission of EM signals 531 in the IRspectrum and/or NIR spectrum passing at an angle relative to the layersof the face 501 through the signal transmissive region(s) 620 of theface 501 of the display panel 510, may have a characteristic size thatmay lie in a range of at least one of between about: 1-200 nm, 1-150 nm,1-100 nm, 1-50 nm, 1-40 nm, 1-30 nm, 1-20 nm, 5-20 nm, or 8-15 nm.

In some non-limiting examples, the particle structures 121, in thecontext of permitting the transmission of EM signals 531 in the IRspectrum and/or NIR spectrum passing at an angle relative to the layersof the face 501 through the signal transmissive region(s) 620 of theface 501 of the display panel 510, may have a mean and/or median featuresize of at least one of between about: 5-100 nm, 5-50 nm, 5-40 nm, 5-30nm, 5-25 nm, 5-20 nm, or 8-15 nm. By way of non-limiting example, suchmean and/or median dimension may correspond to the mean diameter and/orthe median diameter, respectively, of the particle structures 121 of theEM radiation-absorbing layer 120.

In some non-limiting examples, a majority of the particle structures121, in the context of permitting the transmission of EM signals 531 inthe IR spectrum and/or NIR spectrum passing at an angle relative to thelayers of the face 501 through the signal transmissive region(s) 620 ofthe face 501 of the display panel 510, may have a maximum feature sizeof at least one of no more than about: 100 nm, 80 nm, 50 nm, 40 nm, 30nm, 25 nm, 20 nm, or 15 nm.

In some non-limiting examples, a percentage of the particle structures121, in the context of permitting the transmission of EM signals 531 inthe IR spectrum and/or NIR spectrum passing at an angle relative to thelayers of the face 501 through the signal transmissive region(s) 620 ofthe face 501 of the display panel 510, that may have such a maximumfeature size, may be at least one of at least about: 70%, 60%, 50%, 40%,30%, 25%, 20%, 15%, or 10% of the area of the EM radiation-absorbinglayer 120.

In some non-limiting examples, the particle structures 121 may beconfigured to permit the transmission of EM signals 531 in the IRspectrum and/or NIR spectrum passing at an angle relative to the layersof the face 501 through the signal transmissive region(s) 620 of theface 501 of the display panel 510, while absorbing EM signals 531 in atleast a sub-range of the visible spectrum and/or the UV spectrum. Insome non-limiting examples, such particle structures 121 may have: (i) apercentage coverage of at least one of between about: 10-50%, 10-45%,12-40%, 15-40%, 15-35%, 18-35%, 20-35%, or 20-30%, (ii) a majority ofthe particle structures 121 may have a maximum feature size of at leastone of at least about: 40 nm, 35 nm, 30 nm, 25 nm, or 20 nm; and (iii) amean and/or median feature size of at least one of between about: 5-40nm, 5-30 nm, 8-30 nm 10-30 nm, 8-25 nm, 10-25 nm, 8-20 nm, 10-15 nm, or8-15 nm.

In some non-limiting examples, the resonance imparted by the at leastone particle structure 121 for enhancing the transmission of EM signals531 passing at an angle relative to the layers of the face 501 throughthe non-emissive region(s) 1902 of the face 501 of the display panel510, may be tuned by judicious selection of at least one of acharacteristic size, size distribution, shape, surface coverage,configuration, dispersity, and/or material of the particle structures121.

In some non-limiting examples, the resonance may be tuned by varying thedeposited thickness of the deposited material 1231.

In some non-limiting examples, the resonance may be tuned by varying theaverage film thickness of the EM layer patterning coating 210 _(e).

In some non-limiting examples, the resonance may be tuned by varying thethickness of the at least one covering layer 710. In some non-limitingexamples, the thickness of the at least one covering layer 710 may be inthe range of 0 nm (corresponding to the absence of the at least onecovering layer 710) to a value that exceeds the characteristic of thedeposited particle structures 121.

In some non-limiting examples, the resonance may be tuned by alteringthe composition of metal in the deposited material 1231 to alter thedielectric constant of the deposited particle structures 121.

In some non-limiting examples, the resonance may be tuned by doping thepatterning material 1111 with an organic material having a differentcomposition.

In some non-limiting examples, the resonance may be tuned by selectingand/or modifying a patterning material 1111 to have a specificrefractive index and/or a specific extraction coefficient.

In some non-limiting examples, the resonance may be tuned by selectingand/or modifying the material deposited as the at least one coveringlayer 710 to have a specific refractive index and/or a specificextinction coefficient. By way of non-limiting example, typical organicCPL materials may have a refractive index in the range of between about:1.7-2.0, whereas SiON_(x), a material typically used as a TFE material,may have a refractive index that may exceed about 2.4. Concomitantly,SiON_(x) may have a high extinction coefficient that may impact thedesired resonance characteristics.

Those having ordinary skill in the relevant art will appreciate thatadditional parameters and/or values and/or ranges thereof may becomeapparent as being suitable to tune the resonance imparted by the EMradiation-absorbing layer 120 for allowing transmission of EM signals531 passing at an angle relative to the layers of the face 501 throughthe non-emissive region(s) 1920 of the face 501 of the display panel 510and/or enhancing absorption of EM radiation, which by way ofnon-limiting example may be visible light, incident upon the face 501 ofthe display panel 510.

Those having ordinary skill in the relevant art will appreciate thatwhile certain values and/or ranges of these parameters may be suitableto tune the resonance imparted by the EM radiation-absorbing layer 120for enhancing the transmission of EM signals 531 passing at an anglerelative to the layers of the face 501 through the non-emissiveregion(s) 1902 of the face 501 of the display panel 510, other valuesand/or ranges of such parameters may be appropriate for other purposes,beyond the enhancement of the transmission of EM signals 531, includingincreasing the performance, stability, reliability, and/or lifetime ofthe face 501, and in some non-limiting examples, to ensure deposition ofa suitable second electrode 1540 in the second portion 402, in theemissive region(s) 510 thereof, to facilitate emission of EM radiationthereby.

Additionally, those having ordinary skill in the relevant art willappreciate that there may be additional parameters and/or values and/orranges that may be suitable for such other purposes.

In some non-limiting examples, the vapor flux 1232 of the depositedmaterial 1231 incident on the exposed layer surface 11 of the face 501within the second portion 402 (that is, beyond the lateral aspect of thefirst portion 401, in which the exposed layer surface 11 of the face 501is of the EM layer patterning coating 210 _(e)) may be at a rate and/orfor a duration that it may not form a closed coating 1040 of thedeposited material 1231 thereon, even in the absence of the EM layerpatterning coating 210 _(e). In such scenario, the vapor flux 1232 ofthe deposited material 1231 on the exposed layer surface 11, within thelateral aspect of the second portion 402, may also form at least oneparticle structure 121 _(t) thereon, including without limitation, as adiscontinuous layer 130, as shown in FIG. 7A.

FIG. 7B is a simplified block diagram of an example version 500 _(b) ofthe user device 500. In the display panel 500 _(b) thereof, when thevapor flux 1232 of the deposited material 1232 is incident on theexposed layer surface 11, rather than forming a closed coating 1040 asthe second electrode 1540 in the second portion 402, as in the face 501,a discontinuous layer 130 may be formed in the second portion 402,comprising at least one particle structure 121 _(t). Where the at leastone particle structures 121 _(t) are electrically coupled, thediscontinuous layer 130 may serve as a second electrode 1540.

In some non-limiting examples, the characteristic size, sizedistribution, shape, surface coverage, configuration, deposited density,and/or dispersity of the particle structures 121 _(t) may be differentfrom that of the particle structures 121 d of the EM radiation-absorbinglayer 120. In some non-limiting examples, the characteristic size of theparticle structures 121 _(t) may be greater than the characteristic sizeof the particle structures 121 _(d) of the EM radiation-absorbing layer120. In some non-limiting examples, the surface coverage of the particlestructures 121 _(t) may be greater than the surface coverage of theparticle structures 121 d of the EM radiation-absorbing layer 120. Insome non-limiting examples, the deposited density of the particlestructures 121 _(t) may be greater than the deposited density of theparticle structures 121 d of the EM radiation-absorbing layer 120.

In some non-limiting examples, the characteristic size, sizedistribution, shape, surface coverage, configuration, deposited density,and/or dispersity of the particle structures 121 _(t) may be such toallow the particle structures 121 _(t) to be electrically coupled.

In some non-limiting examples, the characteristic size of the at leastone particle structure 121 _(t) of the discontinuous layer 130 formingthe second electrode 1540 in the second portion 402 may exceed thecharacteristic size of the at least one particle structure 121 d of theEM radiation-absorbing layer 120 in the first portion 401.

In some non-limiting examples, the surface coverage of the at least oneparticle structure 121 _(t) of the discontinuous layer 130 forming thesecond electrode 1540 in the second portion 402 may exceed the surfacecoverage of the at least one particle structure 121 d of the EMradiation-absorbing layer 120 in the first portion 401.

In some non-limiting examples, the deposited density of thediscontinuous layer 130 of the second electrode 1540 in the secondportion 402 may be greater than the deposited density of the EMradiation-absorbing layer 120 in the first portion 401.

In some non-limiting examples, the at least one particle structure 121of the discontinuous layer 130 forming the second electrode 1540 mayextend partially over the EM layer patterning coating 210 in thetransition region 705.

FIG. 7C is a simplified block diagram of an example version 500 _(c) ofthe user device 500. In the display panel 510 _(b), the at least one TFTstructure 701 for driving the emissive region 610 in the second portion402 of the lateral aspect of the display panel 510 _(b) is co-locatedwith the emissive region 610 within the second portion 402 of thelateral aspect of the display panel 510 _(b) and the first electrode1520 extends through the TFT insulating layer 1609 to be electricallycoupled through the at least one driving circuit incorporating such atleast one TFT structure 1601 to a terminal of the power source 1505and/or to ground.

By contrast, in the display panel 510 c, there is no TFT structure 701co-located with the emissive region 610 that it drives, within thesecond portion 402 of the lateral aspect of the face 501. Accordingly,the first electrode 1520 of the display panel 510 c does not extendthrough the TFT insulating layer 709. Rather, the at least one TFTstructure 701 for driving the emissive region 610 in the second portion402 of the lateral aspect of the display panel 510 c is locatedelsewhere within the lateral aspect thereof (not shown), and aconductive channel 735 may extend within the lateral aspect of thedisplay panel 510 c beyond the second portion 402 thereof on an exposedlayer surface 11 of the display panel 510 c, which in some non-limitingexamples, may be the TFT insulating layer 709. In some non-limitingexamples, the conductive channel 735 may extend across at least part ofthe first portion 401 of the lateral aspect of the display panel 510 c.In some non-limiting examples, the conductive channel 735 may have anaverage film thickness so as to maximize the transmissivity of EMsignals 531 passing at an angle to the layers of the face 501therethrough. In some non-limiting examples, the conductive channel 735may be formed of Cu and/or a TCO.

A series of samples were fabricated to analyze the features of the EMradiation-absorbing layer 120 formed on the exposed layer surface 11 ofthe EM layer patterning coating 210 _(e), following exposure of suchexposed layer surface 11 to a vapor flux 1232 of Ag.

A sample was fabricated by depositing an organic material to provide theEM layer patterning coating 210 _(e) on a silicon (Si) substrate. Theexposed layer surface 11 of the EM layer patterning coating 210 _(e) wasthen subjected to a vapor flux 1232 of Ag until a reference thickness of8 nm was reached. Following the exposure of the exposed layer surface 11of the EM layer patterning coating 210 _(e) to the vapor flux 1232, theformation of a discontinuous layer 130 in the form of discrete particlestructures 121 of Ag on the exposed layer surface 11 of the EM layerpatterning coating 210 _(e) was observed.

The features of such discontinuous layer 130 was characterized by SEM tomeasure the size of the discrete particle structures 121 of Ag depositedon the exposed layer surface 11 of the EM layer patterning coating 210_(e). Specifically, an average diameter of each discrete particlestructure 121 was calculated by measuring the surface area occupiedthereby when the exposed layer surface 11 of the EM layer patterningcoating 210 _(e) was viewed in plan, and calculating an average diameterupon fitting the area occupied by each particle structures 121 with acircle having an equivalent area. The SEM micrograph of the sample isshown in FIG. 9A, and FIG. 9C shows a distribution of average diameters910 obtained by this analysis. For comparison, a reference sample wasprepared in which 8 nm of Ag was deposited directly on an Si substrate.The SEM micrograph of such reference sample is shown in FIG. 9B, andanalysis 920 of this micrograph is also reflected in FIG. 9C.

As may be seen, a median size of the discrete Ag particle structures 121on the exposed layer surface 11 of the EM layer patterning coating 210_(e) was found to be approximately 13 nm, while a median grain size ofthe Ag film deposited on the Si substrate in the reference sample wasfound to be approximately 28 nm. An area percentage of the exposed layersurface 11 of the EM layer patterning coating 210 _(e) covered by thediscrete Ag particle structures 121 of the discontinuous layer 130 inthe analyzed part of the sample was found to be approximately 22.5%,while the percentage of the exposed layer surface 11 of the Si substratecovered by the Ag grains in the reference sample was found to beapproximately 48.5%.

Additionally, a glass sample was prepared using substantially identicalprocesses, by depositing an EM layer patterning coating 210 _(e) and adiscontinuous layer 130 of Ag particle structures 121 on a glasssubstrate, and this sample (Sample B) was analyzed in order to determinethe effects of the discontinuous layer 130 on transmittance through thesample. Comparative glass samples were fabricated by depositing an EMlayer patterning coating 210 _(e) on a glass substrate (ComparativeSample A), and by depositing an 8 nm thick Ag coating directly on aglass substrate (Comparative Sample C). The transmittance of EMradiation, expressed as a percentage of intensity of EM radiationdetected upon the EM radiation passing through each sample, was measuredat various wavelengths for each sample and summarized in Table 4 below:

TABLE 4 Wavelength 450 nm 550 nm 700 nm 850 nm Comparative 90% 90% 90%90% Sample A Sample B 54% 80% 85% 88% Reference 37% 30% 46% 60% Sample C

As may be seen, Sample B exhibited relatively low EM radiationtransmittance of about 54% at a wavelength of 450 nm in the visiblespectrum, due to EM radiation absorption caused by the presence of theEM radiation-absorbing layer 120, while exhibiting a relatively high EMradiation transmittance of about 88% at a wavelength of 850 nm in theNIR spectrum. Since Comparative Sample A exhibited transmittance ofabout 90% at a wavelength of 850 nm, it will be appreciated that thepresence of the EM radiation-absorbing layer 120 did not substantiallyattenuate the transmission of EM radiation, including withoutlimitation, EM signals 531, at such wavelength. Comparative Sample Cexhibited a relatively low transmittance of 30-40% in the visiblespectrum and a lower transmittance at a wavelength of 850 nm in the NIRspectrum relative to Sample B.

For the purposes of the foregoing analysis, small particle structures121 below a threshold area of no more than about: 10 nm² at a 500 nmscale and of no more than about: 2.5 nm² at a 200 nm scale weredisregarded as these approached the resolution of the images.

Covering Layer

In some non-limiting examples, at least one covering layer 710 may beprovided in the form of at least one layer of an outcoupling and/orencapsulation coating of the display panel 510, including withoutlimitation, an outcoupling layer, a CPL, a layer of a TFE, a polarizinglayer, or other physical layer and/or coating that may be deposited uponthe display panel 510 as part of the manufacturing process. In somenon-limiting examples, the at least one covering layer 710 may compriselithium fluoride (LiF).

In some non-limiting examples, a CPL may be deposited over the entiresurface of the device 300. The function of the CPL in general may be topromote outcoupling of light emitted by the device 300, thus enhancingthe external quantum efficiency (EQE).

In some non-limiting examples, at least one covering layer 710 may bedeposited at least partially across the lateral extent of the face 501,in some non-limiting examples, at least partially covering the at leastone particle structure 121 of the EM radiation-absorbing layer 120 inthe first portion 401, and forming an interface with the EM layerpatterning coating 210 _(e) at the exposed layer surface 11 thereof. Insome non-limiting examples, the at least one covering layer 710 may alsoat least partially cover the second electrode 1520 in the second portion402.

In some non-limiting examples, the at least one covering layer 710 mayhave a high refractive index. In some non-limiting examples, the atleast one covering layer 710 may have a refractive index that exceeds arefractive index of the EM layer patterning coating 210 _(e).

In some non-limiting examples, the display panel 510 may be provided, atthe interface with the exposed layer surface 11 of the EM layerpatterning coating 210 _(e), with an air gap and/or air interface,whether during, or subsequent to, manufacture, and/or in operation.Thus, in some non-limiting examples, such air gap and/or air interfacemay be considered as the at least one covering layer 710. In somenon-limiting examples, the display panel 510 may be provided with both aCPL and an air gap, wherein the EM radiation-absorbing coating 120 maybe covered by the CPL and the air gap is disposed on or over the CPL.

In some non-limiting examples, at least one of the particle structures121 of deposited material 1231 in the EM radiation-absorbing layer 120may be in physical contact with the at least one covering layer 710. Insome non-limiting examples, substantially all of the particle structures121 of the deposited material 1231 in the EM radiation-absorbing layer120 may be in physical contact with the at least one covering layer 710.

Those having ordinary skill in the relevant art will appreciate thatthere may be additional layers introduced at various stage ofmanufacture that are not shown.

In some non-limiting examples, the thin disperse EM radiation-absorbinglayer 120 of particle structures 121 in the first portion 401, at aninterface between the patterning layer 210, comprising a patterningmaterial 1111 having a low refractive index and the at least onecovering layer 710, including without limitation, a CPL, comprising amaterial that may have a high refractive index, may enhance outcouplingof at least one EM signal 531 passing through the signal transmissiveregion(s) 620 of the face 501 of the display panel 510 at an anglerelative to the layers of the face 501.

Patterning

Those having ordinary skill in the relevant art will appreciate thatfurther particulars of patterning a deposited material 1231 using apatterning coating 210 (whether or not for purposes of forming an EMradiation-absorbing layer 120) will now be described.

In some non-limiting examples, in the first portion 401, a patterningcoating 210, which may, in some non-limiting examples, be an NIC,comprising a patterning material 1111, which in some non-limitingexamples, may be an NIC material, may be selectively deposited as aclosed coating 1040 on the exposed layer surface 11 of an underlyinglayer, including without limitation, a substrate 10, of the device 100,only in the first portion 401. However, in the second portion 402, theexposed layer surface 11 of the underlying layer may be substantiallydevoid of a closed coating 1040 of the patterning material 1111.

Patterning Coating

FIG. 10 is a cross-sectional view of a layered semiconductor device1000, of which the device 100 may, in some non-limiting examples, be aversion thereof. The patterning coating 210 may comprise a patterningmaterial 1111. In some non-limiting examples, the patterning coating 210may comprise a closed coating 1040 of the patterning material 1111.

The patterning coating 210 may provide an exposed layer surface 11 witha relatively low initial sticking probability (in some non-limitingexamples, under the conditions identified in the dual QCM techniquedescribed by Walker et al.) against the deposition of deposited material1231, which, in some non-limiting examples, may be substantially lessthan the initial sticking probability against the deposition of thedeposited material 1231 of the exposed layer surface 11 of theunderlying layer of the device 100, upon which the patterning coating210 has been deposited.

Because of the low initial sticking probability of the patterningcoating 210, and/or the patterning material 1111, in some non-limitingexamples, when deposited as a film, and/or coating in a form, and undersimilar circumstances to the deposition of the patterning coating 210within the device 1000, against the deposition of the deposited material1231, the first portion 401 comprising the patterning coating 210 may besubstantially devoid of a closed coating 1040 of the deposited material1231.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, in some non-limiting examples, when depositedas a film, and/or coating in a form, and under similar circumstances tothe deposition of the patterning coating 210 within the device 1000, mayhave an initial sticking probability against the deposition of thedeposited material 1231, that is no more than at least one of about:0.9, 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005,0.003, 0.001, 0.0008, 0.0005, 0.0003, or 0.0001.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, in some non-limiting examples, when depositedas a film, and/or coating in a form, and under similar circumstances tothe deposition of the patterning coating 210 within the device 1000, mayhave an initial sticking probability against the deposition of silver(Ag), and/or magnesium (Mg) that is no more than at least one of about:0.9, 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005,0.003, 0.001, 0.0008, 0.0005, 0.0003, or 0.0001.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, in some non-limiting examples, when depositedas a film, and/or coating in a form, and under similar circumstances tothe deposition of the patterning coating 210 within the device 1000, mayhave an initial sticking probability against the deposition of adeposited material 1231 of at least one of between about: 0.15-0.0001,0.1-0.0003, 0.08-0.0005, 0.08-0.0008, 0.05-0.001, 0.03-0.0001,0.03-0.0003, 0.03-0.0005, 0.03-0.0008, 0.03-0.001, 0.03-0.005,0.03-0.008, 0.03-0.01, 0.02-0.0001, 0.02-0.0003, 0.02-0.0005,0.02-0.0008, 0.02-0.001, 0.02-0.005, 0.02-0.008, 0.02-0.01, 0.01-0.0001,0.01-0.0003, 0.01-0.0005, 0.01-0.0008, 0.01-0.001, 0.01-0.005,0.01-0.008, 0.008-0.0001, 0.008-0.0003, 0.008-0.0005, 0.008-0.0008,0.008-0.001, 0.008-0.005, 0.005-0.0001, 0.005-0.0003, 0.005-0.0005,0.005-0.0008, or 0.005-0.001.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, in some non-limiting examples, when depositedas a film, and/or coating in a form, and under similar circumstances tothe deposition of the patterning coating 210 within the device 1000, mayhave an initial sticking probability against the deposition of aplurality of deposited materials 1231 that is no more than a thresholdvalue. In some non-limiting examples, such threshold value may be atleast one of about: 0.3, 0.2, 0.18, 0.15, 0.13, 0.1, 0.08, 0.05, 0.03,0.02, 0.01, 0.008, 0.005, 0.003, or 0.001.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, in some non-limiting examples, when depositedas a film, and/or coating in a form, and under similar circumstances tothe deposition of the patterning coating 210 within the device 1000, mayhave an initial sticking probability that is less than such thresholdvalue against the deposition of a plurality of deposited materials 1231selected from at least one of: Ag, Mg, ytterbium (Yb), cadmium (Cd), andzinc (Zn). In some further non-limiting examples, the patterning coating210 may exhibit an initial sticking probability of or below suchthreshold value against the deposition of a plurality of depositedmaterials 1231 selected from at least one of: Ag, Mg, and Yb.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, in some non-limiting examples, when depositedas a film, and/or coating in a form, and under similar circumstances tothe deposition of the patterning coating 210 within the device 1000, mayexhibit an initial sticking probability against the deposition of afirst deposited material 1231 of, or below, a first threshold value, andan initial sticking probability against the deposition of a seconddeposited material 1231 of, or below, a second threshold value. In somenon-limiting examples, the first deposited material 1231 may be Ag, andthe second deposited material 1231 may be Mg. In some other non-limitingexamples, the first deposited material 1231 may be Ag, and the seconddeposited material 1231 may be Yb. In some other non-limiting examples,the first deposited material 1231 may be Yb, and the second depositedmaterial 1231 may be Mg. In some non-limiting examples, the firstthreshold value may exceed the second threshold value.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, in some non-limiting examples, when depositedas a film, and/or coating in a form, and under circumstances similar tothe deposition of the patterning coating 210 within the device 1000 mayhave a transmittance for EM radiation of at least a thresholdtransmittance value, after being subjected to a vapor flux 1232 (FIG. 12) of the deposited material 1231, including without limitation, Ag.

In some non-limiting examples, such transmittance may be measured afterexposing the exposed layer surface 11 of the patterning coating 210and/or the patterning material 1111, formed as a thin film, to a vaporflux 1232 of the deposited material 1231, including without limitation,Ag, under typical conditions that may be used for depositing anelectrode of an opto-electronic device, which by way of non-limitingexample, may be a cathode of an organic light-emitting diode (OLED)device.

In some non-limiting examples, the conditions for subjecting the exposedlayer surface 11 to the vapor flux 1232 of the deposited material 1231,including without limitation, Ag, may be as follows: (i) vacuum pressureof about 10⁻⁴ Torr or 10⁻⁵ Torr; (ii) the vapor flux 1232 of thedeposited material 1231, including without limitation, Ag beingsubstantially consistent with a reference deposition rate of about 1angstrom (A)/sec, which by way of non-limiting example, may be monitoredand/or measured using a QCM; and (iii) the exposed layer surface 11being subjected to the vapor flux 1232 of the deposited material 1231,including without limitation, Ag until a reference average layerthickness of about 15 nm is reached, and upon such reference averagelayer thickness being attained, the exposed layer surface 11 not beingfurther subjected to the vapor flux 1232 of the deposited material 1231,including without limitation, Ag.

In some non-limiting examples, the exposed layer surface 11 beingsubjected to the vapor flux 1232 of the deposited material 1231,including without limitation, Ag may be substantially at roomtemperature (e.g. about 25° C.). In some non-limiting examples, theexposed layer surface 11 being subjected to the vapor flux 1232 of thedeposited material 1231, including without limitation, Ag may bepositioned about 65 cm away from an evaporation source by which thedeposited material 1231, including without limitation, Ag, isevaporated.

In some non-limiting examples, the threshold transmittance value may bemeasured at a wavelength in the visible spectrum. By way of non-limitingexample, the threshold transmittance value may be measured at awavelength of about 460 nm. In some non-limiting examples, the thresholdtransmittance value may be measured at a wavelength in the IR and/or NIRspectrum. By way of non-limiting example, the threshold transmittancevalue may be measured at a wavelength of about 700 nm, 900 nm, or about1000 nm. In some non-limiting examples, the threshold transmittancevalue may be expressed as a percentage of incident EM power that may betransmitted through a sample. In some non-limiting examples, thethreshold transmittance value may be at least one of at least about:60%, 65%, 70%, 75%, 80%, 85%, or 90%.

In some non-limiting examples, there may be a positive correlationbetween the initial sticking probability of the patterning coating 210,and/or the patterning material 1111, in some non-limiting examples, whendeposited as a film, and/or coating in a form, and under circumstancessimilar to the deposition of the patterning coating 210 within thedevice 1000, against the deposition of the deposited material 1231 andan average layer thickness of the deposited material 1231 thereon.

It would be appreciated by a person having ordinary skill in therelevant art that high transmittance may generally indicate an absenceof a closed coating 1040 of the deposited material 1231, which by way ofnon-limiting example, may be Ag. On the other hand, low transmittancemay generally indicate presence of a closed coating 1040 of thedeposited material 1231, including without limitation, Ag, Mg, and/orYb, since metallic thin films, particularly when formed as a closedcoating 1040, may exhibit a high degree of absorption of EM radiation.

It may be further postulated that exposed layer surfaces 11 exhibitinglow initial sticking probability with respect to the deposited material1231, including without limitation, Ag, Mg, and/or Yb, may exhibit hightransmittance. On the other hand, exposed layer surfaces 11 exhibitinghigh sticking probability with respect to the deposited material 1231,including without limitation, Ag, Mg, and/or Yb, may exhibit lowtransmittance.

A series of samples was fabricated to measure the transmittance of anexample material, as well as to visually observe whether or not a closedcoating 1040 of Ag was formed on the exposed layer surface 11 of suchexample material. Each sample was prepared by depositing, on a glasssubstrate, an approximately 50 nm thick coating of an example material,then subjecting the exposed layer surface 11 of the coating to a vaporflux 1232 of Ag at a rate of about 1 Å/sec until a reference layerthickness of about 15 nm was reached. Each sample was then visuallyanalyzed and the transmittance through each sample was measured.

The molecular structures of the example materials used in the samplesherein are set out below:

TABLE 5 Material Molecular Structure/Name HT211

HT01

TAZ

BAlq

Liq

Example Material 1

Example Material 2

Example Material 3

Example Material 4

Example Material 5

Example Material 6

Example Material 7

Example Material 8

Example Material 9

The samples in which a substantially closed coating 1040 of Ag hadformed were visually identified, and the presence of such coating inthese samples was further confirmed by measurement of transmittancetherethrough, which showed transmittance of no more than about 50% at awavelength of about 460 nm.

The samples in which no closed coating 1040 of Ag had formed were alsoidentified, and the absence of such coating in these samples was furtherconfirmed by measurement of transmittance therethrough, which showedtransmittance in excess of about 70% at a wavelength of about 460 nm.

The results are summarized below:

TABLE 6 Material Closed Coating of Ag? HT211 Present HT01 Present TAZPresent Balq Present Liq Present Example Material 1 Present ExampleMaterial 2 Present Example Material 3 Not Present Example Material 4 NotPresent Example Material 5 Not Present Example Material 6 Not PresentExample Material 7 Not Present Example Material 8 Not Present ExampleMaterial 9 Not Present

Based on the foregoing, it was found that the materials used in thefirst 7 samples in Tables 5 and 6 (HT211 to Example Material 2) may beless suitable for inhibiting the deposition of the deposited material1231 thereon, including without limitation, Ag, and/or Ag-containingmaterials.

On the other hand, it was found that Example Material 3 to ExampleMaterial 9 may be suitable, at least in some non-limiting applications,to act as a patterning coating 210 for inhibiting the deposition of thedeposited material 1231 thereon, including without limitation, Ag,and/or Ag-containing materials.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, in some non-limiting examples, when depositedas a film, and/or coating in a form, and under circumstances similar tothe deposition of the patterning coating within the device 1000, mayhave a surface energy of no more than at least one of about: 24dynes/cm, 22 dynes/cm, 20 dynes/cm, 18 dynes/cm, 16 dynes/cm, 15dynes/cm, 13 dynes/cm, 12 dynes/cm, or 11 dynes/cm.

In some non-limiting examples, the surface energy may be at least one ofat least about: 6 dynes/cm, 7 dynes/cm, or 8 dynes/cm.

In some non-limiting examples, the surface energy may be at least one ofbetween about: 10-20 dynes/cm, or 13-19 dynes/cm.

In some non-limiting examples, the critical surface tension of a surfacemay be determined according to the Zisman method, as further detailed inW. A. Zisman, Advances in Chemistry 43 (1964), pp. 1-51.

By way of non-limiting example, a series of samples was fabricated tomeasure the critical surface tension of the surfaces formed by thevarious materials. The results of the measurement are summarized below:

TABLE 7 Material Critical Surface Tension (dynes/cm) HT211 25.6 HT01 >24TAZ 22.4 BAlq 25.9 Liq 24 Example Material 1 26.3 Example Material 224.8 Example Material 3 19 Example Material 4 7.6 Example Material 515.9 Example Material 6 <20 Example Material 7 13.1 Example Material 820 Example Material 9 18.9

Based on the foregoing measurement of the critical surface tension inTable 7 and the previous observation regarding the presence or absenceof a substantially closed coating 1040 of Ag, it was found thatmaterials that form low surface energy surfaces when deposited as acoating, which by way of non-limiting example, may be those having acritical surface tension of at least one of between about: 13-20dynes/cm, or 13-19 dynes/cm, may be suitable for forming the patterningcoating 210 to inhibit deposition of a deposited material 1231 thereon,including without limitation, Ag, and/or Ag-containing materials.

Without wishing to be bound by any particular theory, it may bepostulated that materials that form a surface having a surface energylower than, by way of non-limiting example, about 13 dynes/cm, may beless suitable as a patterning material 1111 in certain applications, assuch materials may exhibit relatively poor adhesion to layer(s)surrounding such materials, exhibit a low melting point, and/or exhibita low sublimation temperature.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, in some non-limiting examples, when depositedas a film, and/or coating in a form, and under circumstances similar tothe deposition of the patterning coating 210 within the device 400, mayhave a low refractive index.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, in some non-limiting examples, when depositedas a film, and/or coating in a form, and under circumstances similar tothe deposition of the patterning coating 210 within the device 1000, mayhave a refractive index for EM radiation at a wavelength of 550 nm thatmay be no more than at least one of about: 1.55, 1.5, 1.45, 1.43, 1.4,1.39, 1.37, 1.35, 1.32, or 1.3.

Without wishing to be bound by any particular theory, it has beenobserved that providing the patterning coating 210 having a lowrefractive index may, at least in some device 100, enhance transmissionof external EM radiation through the second portion 402 thereof. By wayof non-limiting example, devices 1000 including an air gap therein,which may be arranged near or adjacent to the patterning coating 210,may exhibit a higher transmittance when the patterning coating 210 has alow refractive index relative to a similarly configured device in whichsuch low-index patterning coating 210 was not provided.

By way of non-limiting example, a series of samples was fabricated tomeasure the refractive index at a wavelength of 550 nm for the coatingsformed by some of the various example materials. The results of themeasurement are summarized below:

TABLE 8 Material Refractive Index HT211 1.76 HT01 1.80 TAZ 1.69 BAlq1.69 Liq 1.64 Example Material 2 1.72 Example Material 3 1.37 ExampleMaterial 5 1.38 Example Material 7 1.3

Based on the foregoing measurement of refractive index in Table 8, andthe previous observation regarding the presence or absence of asubstantially closed coating 1040 of Ag in Table 6, it was found thatmaterials that form a low refractive index coating, which by way ofnon-limiting example, may be those having a refractive index of no morethan at least one of about: 1.4 or 1.38, may be suitable for forming thepatterning coating 210 to inhibit deposition of a deposited material1231 thereon, including without limitation, Ag, and/or an Ag-containingmaterials.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, in some non-limiting examples, when depositedas a film, and/or coating in a form, and under similar circumstances tothe deposition of the patterning coating 210 within the device 1000, mayhave an extinction coefficient that may be no more than about 0.01 forphotons at a wavelength that is at least one of at least about: 600 nm,500 nm, 460 nm, 420 nm, or 410 nm.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, in some non-limiting examples, when depositedas a film, and/or coating in a form, and under circumstances similar tothe deposition of the patterning coating 210 within the device 1000, maynot substantially attenuate EM radiation passing therethrough, in atleast the visible spectrum.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, when deposited as a film, and/or coating in aform, and under circumstances similar to the deposition of thepatterning coating 210 within the device 1000, may not substantiallyattenuate EM radiation passing therethrough, in at least the IR spectrumand/or the NIR spectrum.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, in some non-limiting examples, when depositedas a film, and/or coating in a form, and under circumstances similar tothe deposition of the patterning coating 210 within the device 1000, mayhave an extinction coefficient that may be at least one of at leastabout: 0.05, 0.1, 0.2, or 0.5 for EM radiation at a wavelength shorterthan at least one of at least about: 400 nm, 390 nm, 380 nm, or 370 nm.In this way, the patterning coating 210, and/or the patterning material1111, when deposited as a film, and/or coating in a form, and undercircumstances similar to the deposition of the patterning coating 210within the device 1000, may absorb EM radiation in the UVA spectrumincident upon the device 1000, thereby reducing a likelihood that EMradiation in the UVA spectrum may impart undesirable effects in terms ofdevice performance, device stability, device reliability, and/or devicelifetime.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, in some non-limiting examples, when depositedas a film, and/or coating in a form, and under circumstances similar tothe deposition of the patterning coating 210 within the device 1000, mayhave a glass transition temperature that is no more than at least one ofabout: 300° C., 150° C., 130° C., 30° C., 0° C., −30° C., or −50° C.

In some non-limiting examples, the patterning material 1111 may have asublimation temperature of at least one of between about: 100-320° C.,120-300° C., 140-280° C., or 150-250° C. In some non-limiting examples,such sublimation temperature may allow the patterning material 1111 tobe readily deposited as a coating using PVD.

The sublimation temperature of a material may be determined usingvarious methods apparent to those having ordinary skill in the relevantart, including without limitation, by heating the material under highvacuum in a crucible and by determining a temperature that may beattained to:

-   -   observe commencement of the deposition of the material onto a        surface on a QCM mounted a fixed distance from the crucible;    -   observe a specific deposition rate, by way of non-limiting        example, 0.1 Å/sec, onto a surface on a QCM mounted a fixed        distance from the crucible; and/or    -   reach a threshold vapor pressure of the material, by way of        non-limiting example, about 10⁻⁴ or 10⁻⁵ Torr.

In some non-limiting examples, the sublimation temperature of a materialmay be determined by heating the material in an evaporation source undera high vacuum environment, by way of non-limiting example, about 10⁻⁴Torr, and by determining a temperature that may be attained to cause thematerial to evaporate, thus generating a vapor flux sufficient to causedeposition of the material, by way of non-limiting example, at adeposition rate of about 0.1 Å/sec onto a surface on a QCM mounted afixed distance from the source.

In some non-limiting examples, the QCM may be mounted about 65 cm awayfrom the crucible for the purpose of determining the sublimationtemperature.

In some non-limiting examples, the patterning coating 210, and/or thepatterning material 1111, may comprise a fluorine (F) atom and/or asilicon (Si) atom. By way of non-limiting example, the patterningmaterial 1111 for forming the patterning coating 210 may be a compoundthat includes F and/or Si.

In some non-limiting examples, the patterning material 1111 may comprisea compound that comprises F. In some non-limiting examples, thepatterning material 1111 may comprise a compound that comprises F and acarbon (C) atom. In some non-limiting examples, the patterning material1111 may comprise a compound that comprises F and C in an atomic ratiocorresponding to a quotient of F/C of at least one of at least about: 1,1.5, or 2. In some non-limiting examples, an atomic ratio of F to C maybe determined by counting all of the F atoms present in the compoundstructure, and for C atoms, counting solely the spa hybridized C atomspresent in the compound structure. In some non-limiting examples, thepatterning material 1111 may comprise a compound that comprises, as partof its molecular sub-structure, a moiety comprising F and C in an atomicratio corresponding to a quotient of F/C of at least about: 1, 1.5, or2.

In some non-limiting examples, the compound of the patterning material1111 may comprise an organic-inorganic hybrid material.

In some non-limiting examples, the patterning material 1111 may be, orcomprise, an oligomer.

In some non-limiting examples, the patterning material 1111 may be, orcomprise, a compound having a molecular structure containing a backboneand at least one functional group bonded to the backbone. In somenon-limiting examples, the backbone may be an inorganic moiety, and theat least one functional group may be an organic moiety.

In some non-limiting examples, such compound may have a molecularstructure comprising a siloxane group. In some non-limiting examples,the siloxane group may be a linear, branched, or cyclic siloxane group.In some non-limiting examples, the backbone may be, or comprise, asiloxane group. In some non-limiting examples, the backbone may be, orcomprise, a siloxane group and at least one functional group containingF. In some non-limiting examples, the at least one functional groupcomprising F may be a fluoroalkyl group. Non-limiting examples of suchcompound include fluoro-siloxanes. Non-limiting examples of suchcompound are Example Material 6 and Example Material 9.

In some non-limiting examples, the compound may have a molecularstructure comprising a silsesquioxane group. In some non-limitingexamples, the silsesquioxane group may be a POSS. In some non-limitingexamples, the backbone may be, or comprise, a silsesquioxane group. Insome non-limiting examples, the backbone may be, or comprise, asilsesquioxane group and at least one functional group comprising F. Insome non-limiting examples, the at least one functional group comprisingF may be a fluoroalkyl group. Non-limiting examples of such compoundinclude fluoro-silsesquioxane and/or fluoro-POSS. A non-limiting exampleof such compound is Example Material 8.

In some non-limiting examples, the compound may have a molecularstructure comprising a substituted or unsubstituted aryl group, and/or asubstituted or unsubstituted heteroaryl group. In some non-limitingexamples, the aryl group may be phenyl, or naphthyl. In somenon-limiting examples, at least one C atom of an aryl group may besubstituted by a heteroatom, which by way of non-limiting example may beO, N, and/or S, to derive a heteroaryl group. In some non-limitingexamples, the backbone may be, or comprise, a substituted orunsubstituted aryl group, and/or a substituted or unsubstitutedheteroaryl group. In some non-limiting examples, the backbone may be, orcomprise, a substituted or unsubstituted aryl group, and/or asubstituted or unsubstituted heteroaryl group and at least onefunctional group comprising F. In some non-limiting examples, the atleast one functional group comprising F may be a fluoroalkyl group.

In some non-limiting examples, the compound may have a molecularstructure comprising a substituted or unsubstituted, linear, branched,or cyclic hydrocarbon group. In some non-limiting examples, one or moreC atoms of the hydrocarbon group may be substituted by a heteroatom,which by way of non-limiting example may be O, N, and/or S.

In some non-limiting examples, the compound may have a molecularstructure comprising a phosphazene group. In some non-limiting examples,the phosphazene group may be a linear, branched, or cyclic phosphazenegroup. In some non-limiting examples, the backbone may be, or comprise,a phosphazene group. In some non-limiting examples, the backbone may be,or comprise, a phosphazene group and at least one functional groupcomprising F. In some non-limiting examples, the at least one functionalgroup comprising F may be a fluoroalkyl group. Non-limiting examples ofsuch compound include fluoro-phosphazenes. A non-limiting example ofsuch compound is Example Material 4.

In some non-limiting examples, the compound may be a fluoropolymer. Insome non-limiting examples, the compound may be a block copolymercomprising F. In some non-limiting examples, the compound may be anoligomer. In some non-limiting examples, the oligomer may be afluorooligomer. In some non-limiting examples, the compound may be ablock oligomer comprising F. Non-limiting examples, of fluoropolymersand/or fluorooligomers are those having the molecular structure ofExample Material 3, Example Material 5, and/or Example Material 7.

In some non-limiting examples, the compound may be a metal complex. Insome non-limiting examples, the metal complex may be an organo-metalcomplex. In some non-limiting examples, the organo-metal complex maycomprise F. In some non-limiting examples, the organo-metal complex maycomprise at least one ligand comprising F. In some non-limitingexamples, the at least one ligand comprising F may be, or comprise, afluoroalkyl group.

In some non-limiting examples, the patterning material 1111 may be, orcomprise, an organic-inorganic hybrid material.

In some non-limiting examples, the patterning material 1111 may comprisea plurality of different materials.

In some non-limiting examples, a molecular weight of the compound of thepatterning material 1111 may be no more than at least one of about:5,000 g/mol, 4,500 g/mol, 4,000 g/mol, 3,800 g/mol, or 3,500 g/mol.

In some non-limiting examples, the molecular weight of the compound ofthe patterning material 1111 may be at least one of at least about:1,500 g/mol, 1,700 g/mol, 2,000 g/mol, 2,200 g/mol, or 2,500 g/mol.

Without wishing to be bound by any particular theory, it may bepostulated that, for compounds that are adapted to form surfaces withrelatively low surface energy, there may be an aim, in at least someapplications, for the molecular weight of such compounds to be at leastone of between about: 1,500-5,000 g/mol, 1,500-4,500 g/mol, 1,700-4,500g/mol, 2,000-4,000 g/mol, 2,200-4,000 g/mol, or 2,500-3,800 g/mol.

Without wishing to be bound by any particular theory, it may bepostulated that such compounds may exhibit at least one property thatmaybe suitable for forming a coating, and/or layer having: (i) arelatively high melting point, by way of non-limiting example, of atleast 100° C., (ii) a relatively low surface energy, and/or (iii) asubstantially amorphous structure, when deposited, by way ofnon-limiting example, using vacuum-based thermal evaporation processes.

In some non-limiting examples, a percentage of the molar weight of suchcompound that may be attributable to the presence of F atoms, may be atleast one of between about: 40-90%, 45-85%, 50-80%, 55-75%, or 60-75%.In some non-limiting examples, F atoms may constitute a majority of themolar weight of such compound.

In some non-limiting examples, the patterning coating 210 may bedisposed in a pattern that may be defined by at least one region thereinthat may be substantially devoid of a closed coating 1040 of thepatterning coating 210. In some non-limiting examples, the at least oneregion may separate the patterning coating 210 into a plurality ofdiscrete fragments thereof. In some non-limiting examples, the pluralityof discrete fragments of the patterning coating 210 may be physicallyspaced apart from one another in the lateral aspect thereof. In somenon-limiting examples, the plurality of the discrete fragments of thepatterning coating 210 may be arranged in a regular structure, includingwithout limitation, an array or matrix, such that in some non-limitingexamples, the discrete fragments of the patterning coating 210 may beconfigured in a repeating pattern.

In some non-limiting examples, at least one of the plurality of thediscrete fragments of the patterning coating 210 may each correspond toan emissive region 610.

In some non-limiting examples, an aperture ratio of the emissive regions610 may be no more than at least one of about: 50%, 40%, 30%, or 20%.

In some non-limiting examples, the patterning coating 210 may be formedas a single monolithic coating.

In some non-limiting examples, the patterning coating 210 may haveand/or provide, including without limitation, because of the patterningmaterial 1111 used and/or the deposition environment, at least onenucleation site for the deposited material 1231.

In some non-limiting examples, the patterning coating 210 may be doped,covered, and/or supplemented with another material that may act as aseed or heterogeneity, to act as such a nucleation site for thedeposited material 1231. In some non-limiting examples, such othermaterial may comprise an NPC 1420 material. In some non-limitingexamples, such other material may comprise an organic material, such asby way of non-limiting example, a polycyclic aromatic compound, and/or amaterial comprising a non-metallic element such as, without limitation,at least one of: O, S, N, or C, whose presence might otherwise be acontaminant in the source material, equipment used for deposition,and/or the vacuum chamber environment. In some non-limiting examples,such other material may be deposited in a layer thickness that is afraction of a monolayer, to avoid forming a closed coating 1040 thereof.Rather, the monomers of such other material may tend to be spaced apartin the lateral aspect so as form discrete nucleation sites for thedeposited material.

In some non-limiting examples, the patterning coating 210 may act as anoptical coating. In some non-limiting examples, the patterning coating210 may modify at least one property, and/or characteristic of EMradiation (including without limitation, in the form of photons) emittedby the device 1000. In some non-limiting examples, the patterningcoating 210 may exhibit a degree of haze, causing emitted EM radiationto be scattered. In some non-limiting examples, the patterning coating210 may comprise a crystalline material for causing EM radiationtransmitted therethrough to be scattered. Such scattering of EMradiation may facilitate enhancement of the outcoupling of EM radiationfrom the device in some non-limiting examples. In some non-limitingexamples, the patterning coating 210 may initially be deposited as asubstantially non-crystalline, including without limitation,substantially amorphous, coating, whereupon, after deposition thereof,the patterning coating 210 may become crystallized and thereafter serveas an optical coupling.

A material which is suitable for use in providing the NIC may generallyhave a low surface energy when deposited as a thin film or coating on asurface. Generally, a material with a low surface energy may exhibit lowintermolecular forces. Generally, a material with low intermolecularforces may exhibit a low melting point. Generally, a material with lowmelting point may not be suitable for use in some applications whichrequire high temperature reliability, by way of non-limiting example, ofup to 60° C., up to 85° C., or up to 100° C., due to changes in physicalproperties of the coating or material at operating temperaturesapproaching the melting point of the material. By way of non-limitingexample, a material with a melting point of 120° C. may not be suitablefor an application which require high temperature reliability up to 100°C. Accordingly, a material with a higher melting point may be desirableat least in some applications that require high temperature reliability.Without wishing to be bound by any particular theory, it is nowpostulated that a material with a relatively high surface energy may beuseful at least in some applications in which a high temperaturereliability may be desired.

Generally, a material with low intermolecular forces may exhibit a lowsublimation temperature. In at least some applications, it may beundesirable for a material to have low sublimation temperature, since itmay not be suitable for certain manufacturing processes which require ahigh degree of control over a layer thickness of a deposited film of thematerial. By way of non-limiting example, for materials with sublimationtemperature less than about: 140° C., 120° C., 110° C., 100° C., or 90°C., it may be difficult to control the deposition rate and layerthickness of a film deposited using vacuum thermal evaporation or othermethods in the art. Accordingly, a material with a higher sublimationtemperature may be useful in at least some applications where a highdegree of control over the film thickness is desired. Without wishing tobe bound by any particular theory, it is now postulated that a materialwith a relatively high surface energy may be useful at least in someapplications in which a high a high degree of control over the filmthickness is desired.

In general, a material with a low surface energy may exhibit a large orwide optical gap which, by way of non-limiting example, may correspondto the HOMO-LUMO gap of the material. At least some materials with largeor wide optical gap and/or HOMO-LUMO gap may exhibit relatively weak orno photoluminescence in the visible portion, deep blue and/or near UVwavelength ranges of the electromagnetic spectrum. By way ofnon-limiting example, such material may exhibit weak or nophotoluminescence upon being subjected to radiation having a wavelengthof about 365 nm, which is a common wavelength of the radiation sourceused in fluorescence microscopy. The presence of such materials,especially when deposited for example as a thin film, may be challengingto detect using standard optical detection techniques such asfluorescence microscopy due to the material exhibiting weak or nophotoluminescence. This may be particularly problematic for applicationsin which the material is selectively deposited, for example through afine metal mask, over portion(s) of a substrate as it may be desirableto determine, following the deposition of the material, the portion(s)in which such materials are present. Accordingly, a material with arelatively small HOMO-LUMO gap may be useful in applications where adetection of a film of the material using optical techniques is desired.Therefore, a material with higher surface energy may be desirable forsuch applications for detection of a film of the material using opticaltechniques.

It may also be desirable in at least some applications to provide apatterning layer for causing formation of a discontinuous coatingcontaining particle structures, upon the patterning layer beingsubjected to a vapor flux of a deposited material. In at least someapplications, it may also be desirable for the patterning layer toexhibit a sufficiently low initial sticking probability such that asubstantially closed coating of the deposited material is formed in thesecond portion, which is uncoated by the patterning layer, while thediscontinuous coating containing particle structures having at least onecharacteristic is formed in the first portion on the patterning layer.In at least some applications, it may be desirable to form adiscontinuous film or particle structure of a deposited material, whichmay by way of non-limiting example be of a metal or metal alloy, in thesecond portion, while depositing a substantially closed thin filmcoating of the deposited material having a thickness of, for example,less than about: 100 nm, 50 nm, 25 nm, or 15 nm. In some non-limitingexamples, the relative amount of the deposited material deposited as adiscontinuous film or particle structure in the first portion maycorrespond to about: 1%-50%, 2%-25%, 5%-20%, or 7%-10% of the amount ofthe deposited material deposited as a substantially closed coating inthe second portion, which by way of non-limiting example may correspondto a thickness of less than about: 100 nm, 75 nm, 50 nm, 25 nm, or 15nm.

Without wishing to be bound by any particular theory, it has now beenfound by the inventors that a patterning layer containing a materialwhich, when deposited as a thin film, exhibits a relatively high surfaceenergy, may be useful in at least some applications where formation of adiscontinuous film or particle structure of a deposited material in thefirst portion, and a substantially closed coating of the depositedmaterial in the second portion is desired, particularly in cases wherethe thickness of the substantially closed coating is, by way ofnon-limiting example, less than about 100 nm, 75 nm, 50 nm, 25 nm, or 15nm.

In some non-limiting examples, the patterning coating 210 and/orpatterning coating includes at least two materials. In some non-limitingexamples, the patterning coating 210 includes a first material and asecond material.

In some non-limiting examples, at least one of the materials of thepatterning coating 210 and/or patterning coating forms an NIC whendeposited as a thin film.

In some non-limiting examples, at least one of the materials of thepatterning coating 210 forms an NIC when deposited as a thin film, andan another material of the patterning coating 210 forms an NPC whendeposited as a thin film. In some non-limiting examples, the firstmaterial forms an NPC when deposited as a thin film, and the secondmaterial forms an NIC when deposited as a thin film. In somenon-limiting examples, the presence of the first material in thepatterning coating 210 may result in an increased initial stickingprobability of the patterning coating 210 compared to cases in which thepatterning coating 210 is formed of the second material, withoutsubstantial presence of the first material.

In some non-limiting examples, at least one of the materials of thepatterning coating 210 is adapted to form a surface having a low surfaceenergy when deposited as a thin film. In some non-limiting examples, thefirst material, when deposited as a thin film, is adapted to form asurface having a lower surface energy than a surface provided by a thinfilm composed of the second material.

In some non-limiting examples, the patterning coating 210 exhibitsphotoluminescence. this may be achieved, for example, by including inthe patterning coating 210 a material which exhibits photoluminescence.

In some non-limiting examples, the patterning coating 210 exhibitsphotoluminescence at a wavelength corresponding to the UV and/or visibleportion of the electromagnetic spectrum. In some non-limiting examples,photoluminescence may be at a wavelength corresponding to the UV,including but not limited to UVA, which corresponds to wavelength ofabout 315 nm to about 400 nm, and/or UVB, which corresponds towavelength of about 280 nm to about 315 nm. In some non-limitingexamples, photoluminescence may be at a wavelength corresponding to thevisible portion of the electromagnetic spectrum, which may correspond towavelength from about 380 nm to about 740 nm. In some non-limitingexamples, photoluminescence may be at a wavelength corresponding to deepblue or near UV.

In some non-limiting examples, the first material has a first opticalgap, and the second material has a second optical gap. The secondoptical gap is greater than the first optical gap. In some non-limitingexamples, the difference between the first optical gap and the secondoptical gap is greater than about 0.3 eV, greater than about 0.5 eV,greater than about 0.7 eV, greater than about 1 eV, greater than about1.3 eV, greater than about 1.5 eV, greater than about 1.7 eV, greaterthan about 2 eV, greater than about 2.5 eV, and/or greater than about 3eV.

In some non-limiting examples, the first optical gap is less than about4.1 eV, less than about 3.5 eV, or less than about 3.4 eV. In somenon-limiting examples, the second optical gap is greater than about 3.4eV, greater than about 3.5 eV, greater than about 4.1 eV, greater thanabout 5 eV, or greater than about 6.2 eV.

In some non-limiting examples, the first optical gap and/or the secondoptical gap corresponds to the HOMO-LUMO gap.

In some non-limiting examples, the first material exhibitsphotoluminescence at a wavelength corresponding to the UV and/or visibleportion of the electromagnetic spectrum. In some non-limiting examples,photoluminescence may be at a wavelength corresponding to the UV,including but not limited to UVA, which corresponds to wavelength ofabout 315 nm to about 400 nm, and/or UVB, which corresponds towavelength of about 280 nm to about 315 nm. In some non-limitingexamples, photoluminescence may be at a wavelength corresponding to thevisible portion of the electromagnetic spectrum, which may correspond towavelength from about 380 nm to about 740 nm. In some non-limitingexamples, photoluminescence may be at a wavelength corresponding to deepblue.

In some non-limiting examples, the first material exhibitsphotoluminescence at a wavelength corresponding to the visible portionof the electromagnetic spectrum, and the second material does notsubstantially exhibit photoluminescence at any wavelength correspondingto the visible portion of the electromagnetic spectrum.

In some non-limiting examples, at least one of the materials of thepatterning coating 210 exhibits photoluminescence, and wherein at leastone of the materials includes a conjugated bond, an aryl moiety,donor-acceptor group, and/or a heavy metal complex.

By way of non-limiting example, photoluminescence of a coating and/or amaterial may be observed through a photoexcitation process. In aphotoexcitation process, the coating and/or the material is subjected toa radiation emitted by a light source, such as from a UV lamp. When theradiation emitted by the light source is absorbed by the coating and/ormaterial, the electrons in the coating and/or material are temporarilyexcited. Following excitation, one or more relaxation processes mayoccur, including but not limited to fluorescence and phosphorescence,which cause light to be emitted from the coating and/or material. Thelight emitted from the coating and/or material during such process maybe detected, for example by a photodetector, to characterize thephotoluminescence properties of the coating and/or material. As usedherein, the wavelength of photoluminescence in relation to a coatingand/or material generally refers to the wavelength of light emitted bysuch coating and/or material as a result of relaxation of electrons froman excited state. As would be understood by a person skilled in the art,the wavelength of light emitted by the coating and/or material as aresult of the photoexcitation process is generally longer than thewavelength of radiation used to initiate photoexcitation.Photoluminescence may be detected and/or characterized using varioustechniques known in the art, including but not limited to fluorescencemicroscopy. As used herein, a photoluminescent coating orphotoluminescent material is a coating or a material which exhibitsphotoluminescence at a wavelength when irradiated with an excitationradiation at a certain wavelength. In some non-limiting examples, aphotoluminescent coating or material may exhibit photoluminescence at awavelength greater than about 365 nm upon being irradiated with anexcitation radiation having a wavelength of 365 nm. A photoluminescentcoating may be detected on a substrate using standard optical techniqueslike fluorescence microscopy, which is useful for quantifying,measuring, or inspecting the presence of such coating or material.

In some non-limiting examples, the optical gap of the various coatingsand/or materials, including by way of non-limiting example, the firstoptical gap and/or the second optical gap, may correspond to an energygap of the coating and/or material from which photons are absorbed oremitted during the photoexcitation process.

In some non-limiting examples, photoluminescence is detected and/orcharacterized by subjecting the coating and/or material to a radiationhaving a wavelength corresponding to the UV portion of theelectromagnetic spectrum, such as by way of non-limiting example, UVA orUVB. In some non-limiting examples, the radiation for causingphotoexcitation has a wavelength of about 365 nm.

In some non-limiting examples, the second material does notsubstantially exhibit photoluminescence at any wavelength correspondingto visible portion of the electromagnetic spectrum. In some non-limitingexamples, the second material does not exhibit photoluminescence uponbeing subjected to a radiation having a wavelength of, or a wavelengthlonger than, about 300 nm, 320 nm, 350 nm, and/or 365 nm. By way ofnon-limiting example, the second material may exhibit insignificantand/or no detectable amount of absorption when subjected to suchradiation. In some non-limiting examples, the second optical gap of thesecond material may be wider than the photon energy of the radiationemitted by the light source, such that the second material does notundergo photoexcitation when subjected to such radiation. However, thePATTERNING COATING 210 containing such second material may neverthelessexhibit photoluminescence upon being subjected to such radiation due tothe first material exhibiting photoluminescence. In this way, forexample, the presence of the patterning coating 210 may be readilydetected and/or observed using routine characterization techniques suchas fluorescence microscopy upon deposition of the patterning coating210.

In some non-limiting examples, the concentration, for example by weight,of the first material in the patterning coating 210 is less than that ofthe second material in the patterning coating 210. in some non-limitingexamples, the patterning coating 210 may contain about 0.1 wt. % orgreater, 0.2 wt. % or greater, 0.5 wt. % or greater, 0.8 wt. % orgreater, 1 wt. % or greater, 3 wt. % or greater, 5 wt. % or greater, 8wt. % or greater, 10 wt. % or greater, 15 wt. % or greater, or 20 wt. %or greater, of the first material. in some non-limiting examples, thepatterning coating 210 may contain about 50 wt. % or less, about 40 wt.% or less, about 30 wt. % or less, about 25 wt. % or less, about 20 wt.% or less, about 15 wt. % or less, about 10 wt. % or less, about 8 wt. %or less, about 5 wt. % or less, about 3 wt. % or less, or about 1 wt. %or less, of the first material. in some non-limiting examples, theremainder of the patterning coating 210 may be comprised substantiallyof the second material. in some non-limiting examples, the patterningcoating 210 may contain additional materials, such as by way ofnon-limiting example, a third material, and/or a fourth material.

In some non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the first materialand/or the second material, contains at least one of fluorine (F) atomand silicon (Si) atom. By way of non-limiting example, at least one ofthe first material and the second material contains at least one of Fand Si. In some further non-limiting examples, the first materialincludes F and/or Si, and the second material includes F and/or Si. Insome non-limiting examples, the first material and the second materialboth contain F. In some non-limiting examples, the first material andthe second material both contain Si. In some non-limiting examples, eachof the first material and the second material contains F and/or Si.

In some non-limiting examples, at least one material of the firstmaterial and the second material contains both F and Si. In somenon-limiting examples, one of the first material and the second materialdoes not contain F and/or Si. In some non-limiting examples, the secondmaterial contains F and/or Si, and the first material does not contain Fand/or Si.

In some non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the first materialand/or the second material, contains F, and at least one of the othermaterials of the patterning coating 210 contains a sp² carbon. In somenon-limiting examples, at least one of the materials of the patterningcoating 210, which for example may be the first material and/or thesecond material, contains F, and at least one of the other materials ofthe patterning coating 210 contains a sp³ carbon. In some non-limitingexamples, at least one of the materials of the patterning coating 210,which for example may be the first material and/or the second material,contains F and a spa carbon, and at least one of the other materials ofthe patterning coating 210 contains a sp² carbon. In some non-limitingexamples, at least one of the materials of the patterning coating 210,which for example may be the first material and/or the second material,contains F and a sp³ carbon wherein all F bonded to a carbon (C) arebonded to sp³ carbon, and at least one of the other materials of thepatterning coating 210 contains a sp² carbon. In some non-limitingexamples, at least one of the materials of the patterning coating 210,which for example may be the first material and/or the second material,contains F and a sp³ carbon wherein all F bonded to C are bonded to sp³carbon, and at least one of the other materials of the patterningcoating 210 contains a sp² carbon and does not contain F. By way ofnon-limiting example, in any of the foregoing non-limiting examples, “atleast one of the materials of the patterning coating 210” may correspondto the second material, and the “at least one of the other materials ofthe patterning coating 210” may correspond to the first material.

As would be appreciated by the skilled person, the presence of materialsin a coating which includes F, sp² carbon, sp³ carbon, an aromatichydrocarbon moiety, and/or other functional groups or moieties may bedetected using various methods known in the art, including by way ofnon-limiting example, an X-ray Photoelectron Spectroscopy (XPS).

In some non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the first materialand/or the second material, contains F, and at least one of the othermaterials of the patterning coating 210 contains an aromatic hydrocarbonmoiety. In some non-limiting examples, at least one of the materials ofthe patterning coating 210, which for example may be the first materialand/or the second material, contains F, and at least one of thematerials of the patterning coating 210 does not contain an aromatichydrocarbon moiety. In some non-limiting examples, at least one of thematerials of the patterning coating 210, which for example may be thefirst material and/or the second material, contains F and does notcontain an aromatic hydrocarbon moiety, and at least one of the othermaterials of the patterning coating 210 contains an aromatic hydrocarbonmoiety. In some non-limiting examples, at least one of the materials ofthe patterning coating 210, which for example may be the first materialand/or the second material, contains F and does not contain an aromatichydrocarbon moiety, and at least one of the other materials of thepatterning coating 210 contains an aromatic hydrocarbon moiety and doesnot contain F. Non-limiting examples of the aromatic hydrocarbon moietyinclude substituted polycyclic aromatic hydrocarbon moiety,unsubstituted polycyclic aromatic hydrocarbon moiety, substituted phenylmoiety, and unsubstituted phenyl moiety.

In some non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the first materialand/or the second material, contains F, and at least one of the othermaterials of the patterning coating 210 contains a polycyclic aromatichydrocarbon moiety. In some non-limiting examples, at least one of thematerials of the patterning coating 210, which for example may be thefirst material and/or the second material, contains F, and at least oneof the materials of the patterning coating 210 does not contain apolycyclic aromatic hydrocarbon moiety. In some non-limiting examples,at least one of the materials of the patterning coating 210, which forexample may be the first material and/or the second material, contains Fand does not contain a polycyclic aromatic hydrocarbon moiety, and atleast one of the other materials of the patterning coating 210 containsa polycyclic aromatic hydrocarbon moiety. In some non-limiting examples,at least one of the materials of the patterning coating 210, which forexample may be the first material and/or the second material, contains Fand does not contain a polycyclic aromatic hydrocarbon moiety, and atleast one of the other materials of the patterning coating 210 containsa polycyclic aromatic hydrocarbon moiety and does not contain F.

In some non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the first materialand/or the second material, contains at least one of a fluorocarbonmoiety and a siloxane moiety, and at least one of the other materials ofthe patterning coating 210 contains a polycyclic aromatic hydrocarbonmoiety. In some non-limiting examples, at least one of the materials ofthe patterning coating 210, which for example may be the first materialand/or the second material, contains at least one of a fluorocarbonmoiety and a siloxane moiety, and at least one of the materials of thepatterning coating 210 does not contain a polycyclic aromatichydrocarbon moiety. In some non-limiting examples, at least one of thematerials of the patterning coating 210, which for example may be thefirst material and/or the second material, contains at least one of afluorocarbon moiety and a siloxane moiety and does not contain apolycyclic aromatic hydrocarbon moiety, and at least one of the othermaterials of the patterning coating 210 contains a polycyclic aromatichydrocarbon moiety. In some non-limiting examples, at least one of thematerials of the patterning coating 210, which for example may be thefirst material and/or the second material, contains at least one of afluorocarbon moiety and a siloxane moiety and does not contain apolycyclic aromatic hydrocarbon moiety, and at least one of the othermaterials of the patterning coating 210 contains a polycyclic aromatichydrocarbon moiety and does not contain a fluorocarbon moiety or asiloxane moiety.

In some non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the first materialand/or the second material, contains F, and at least one of the othermaterials of the patterning coating 210 contains a phenyl moiety. Insome non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the first materialand/or the second material, contains F, and at least one of thematerials of the patterning coating 210 does not contain a phenylmoiety. In some non-limiting examples, at least one of the materials ofthe patterning coating 210, which for example may be the first materialand/or the second material, contains F and does not contain a phenylmoiety, and at least one of the other materials of the patterningcoating 210 contains a phenyl moiety. In some non-limiting examples, atleast one of the materials of the patterning coating 210, which forexample may be the first material and/or the second material, contains Fand does not contain a phenyl moiety, and at least one of the othermaterials of the patterning coating 210 contains a phenyl moiety anddoes not contain F.

In some non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the first materialand/or the second material, contains at least one of a fluorocarbonmoiety and a siloxane moiety, and at least one of the other materials ofthe patterning coating 210 contains a phenyl moiety. In somenon-limiting examples, at least one of the materials of the patterningcoating 210, which for example may be the first material and/or thesecond material, contains at least one of a fluorocarbon moiety and asiloxane moiety, and at least one of the materials of the patterningcoating 210 does not contain a phenyl moiety. In some non-limitingexamples, at least one of the materials of the patterning coating 210,which for example may be the first material and/or the second material,contains at least one of a fluorocarbon moiety and a siloxane moiety anddoes not contain a phenyl moiety, and at least one of the othermaterials of the patterning coating 210 contains a phenyl moiety. Insome non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the first materialand/or the second material, contains at least one of a fluorocarbonmoiety and a siloxane moiety and does not contain a phenyl moiety, andat least one of the other materials of the patterning coating 210contains a phenyl moiety and does not contain a fluorocarbon moiety or asiloxane moiety.

In general, the molecular structures and/or molecular compositions ofthe materials of the patterning coating 210, which for example may bethe first material and the second material, are different from oneanother. In some non-limiting examples, the materials may be selectedsuch that they possess at least one property which is substantiallysimilar or different from one another. Non-limiting examples of suchtrait and/or property include: (1) the molecular structure of a monomer,a monomer backbone, and/or a functional group; (2) the presence of acommon element; (3) similarity in molecular structure; (4) thecharacteristic surface energies; (5) the refractive index; (6) themolecular weight; and/or (7) the thermal properties, including but notlimited to the melting temperature, the sublimation temperature, theglass transition temperature, and/or the thermal decompositiontemperature.

The characteristic surface energy, as used herein particularly withrespect to a material, generally refers to the surface energy determinedfrom such material. By way of example, the characteristic surface energymay be measured from a surface formed by the material deposited and/orcoated in a thin film form. Various methods and theories for determiningthe surface energy of a solid are known. For example, the surface energymay be calculated or derived based on a series of contact anglemeasurements, in which various liquids are brought into contact with asurface of a solid to measure the contact angle between the liquid-vaporinterface and the surface. In some non-limiting examples, the surfaceenergy of a solid surface is equal to the surface tension of a liquidwith the highest surface tension which completely wets the surface. Forexample, a Zisman plot may be used to determine the highest surfacetension value which would result in complete wetting (i.e. contact angleof 0°) of the surface.

The sublimation temperature of a material may be determined usingvarious known methods in the art. By way of non-limiting example, thesublimation temperature may be determined by heating the material underhigh vacuum in a crucible and determining the required temperature toobserve the start of deposition of the material on a quartz crystalmicrobalance mounted a fixed distance from the source. In somenon-limiting examples, the quartz crystal microbalance may be mountedabout 65 cm away from the source for the purpose of determining thesublimation temperature. In some non-limiting examples, the sublimationtemperature may be determined by heating the material under high vacuumin a crucible and measuring the required temperature to observe aspecific deposition rate, by way of non-limiting example of 0.1 A/sec,on a quartz crystal microbalance mounted away from the crucible at afixed distance, by way of non-limiting example, of about 65 cm from thesource. In some non-limiting examples, the sublimation temperature maybe determined by heating the material under high vacuum in a crucibleand determining the required temperature to reach a threshold vaporpressure of the material. By way of non-limiting example, the thresholdvapor pressure may be about 10E-4 Torr or 10E-5 Torr. In somenon-limiting examples, the sublimation temperature of a material may bedetermined by heating the material in an evaporation source under a highvacuum environment of about 10E-4 Torr, and measuring the temperaturerequired to cause the material to evaporate, thus generating a vaporflux sufficient to cause deposition of the material onto a surfacepositioned about 65 cm away from the evaporation source at a rate ofabout 0.1 angstrom/sec. The rate of deposition may be measured, by wayof non-limiting example, using a quartz crystal microbalance which ispositioned about 65 cm away from the evaporation source.

While some non-limiting examples have been described herein withreference to a first material and a second material, it will beappreciated that the patterning coating may further include one, two,three, or more additional materials, and descriptions regarding themolecular structures and/or properties of the first material, the secondmaterial, the first oligomer, and/or the second oligomer may beapplicable with respect to additional materials which may be containedin the patterning coating.

In some non-limiting examples, at least one of the first material andthe second material of the patterning coating 210 is an oligomer. Asused herein, an oligomer generally refers to a material which includesat least two monomer units or monomers. As would be appreciated by aperson skilled in the art, an oligomer may differ from a polymer in atleast one aspect, including but not limited to: (1) the number ofmonomer units contained therein; (2) the molecular weight; and (3) othermaterials properties and/or characteristics. By way of non-limitingexample, further description of polymers and oligomers may be found inNaka K. (2014) Monomers, Oligomers, Polymers, and Macromolecules(Overview). and in Kobayashi S., Müllen K. (eds) Encyclopedia ofPolymeric Nanomaterials. Springer, Berlin, Heidelberg.

An oligomer or a polymer generally includes monomer units which arechemically bonded together to form a molecule. Such monomer units may besubstantially identical to one another such that the molecule isprimarily formed by repeating monomer units, or the molecule may includetwo or more different monomer units. Additionally, the molecule mayinclude one or more terminal units, which may be different from themonomer units of the molecule. An oligomer or a polymer may be linear,branched, cyclic, cyclo-linear, and/or cross-linked. An oligomer or apolymer may include two or more different monomer units which arearranged in a repeating pattern and/or in alternating blocks ofdifferent monomer units.

In some non-limiting examples, at least one of the first material andthe second material is an oligomer. In some further non-limitingexamples, the first material includes a first oligomer, and the secondmaterial includes a second oligomer. Each of the first oligomer and thesecond oligomer includes at least two monomers.

In some non-limiting examples, at least a portion of the molecularstructure of the at least one of the materials of the patterning coating210, which may for example be the first material and/or the secondmaterial, is represented by the following formula:

(Mon)_(n)  Formula (I)

wherein Mon represents a monomer, and n is an integer of 2 or greater.

In some non-limiting examples, n is an integer of 2 to 100, 2 to 50, 3to 20, 3 to 15, 3 to 10, or 3 to 7.

In some non-limiting examples, the molecular structure of the firstmaterial and the second material of the patterning coating 210 is eachindependently represented by Formula (I). By way of non-limitingexample, the monomer and/or n of the first material may be differentfrom those of the second material. In some non-limiting examples, n ofthe first material is the same as the n of the second material. In somenon-limiting examples, n of the first material is different from the nof the second material. In some non-limiting examples, the firstmaterial and the second material are oligomers.

In some non-limiting examples, the monomer includes at least one offluorine and silicon.

In some non-limiting examples, the monomer includes a functional group.In some non-limiting examples, at least one functional group of themonomer has a low surface tension. In some non-limiting examples, atleast one functional group of the monomer includes at least one offluorine and silicon. Non-limiting examples of such functional groupinclude a fluorocarbon group and a siloxane group. In some non-limitingexamples, the monomer includes a silsesquioxane group.

The surface tension attributable to a portion of a molecular structure,including by way of example, a monomer, a monomer backbone unit, alinker, and/or a functional group, may be determined using various knownmethod in the art. A non-limiting example of such method includes theuse of Parachor. Further description of Parachor is provided, forexample, in Conception and Significance of the Parachor”. Nature. 196:890-891. In some non-limiting examples, at least one functional group ofthe monomer has a surface tension of less than 25 dynes/cm, less thanabout 21 dynes/cm, less than about 20 dynes/cm, less than about 19dynes/cm, less than about 18 dynes/cm, less than about 17 dynes/cm, lessthan about 16 dynes/cm, less than about 15 dynes/cm, less than about 14dynes/cm, less than about 13 dynes/cm, less than about 12 dynes/cm, lessthan about 11 dynes/cm, or less than about 10 dynes/cm.

In some non-limiting examples, the monomer includes at least one of aCF₂ and a CF₂H moiety. In some non-limiting examples, the monomerincludes at least one of a CF₂ and a CF₃ moiety. In some non-limitingexamples, the monomer includes a CH₂CF₃ moiety. In some non-limitingexamples, the monomer includes at least one of carbon and oxygen. Insome non-limiting examples, the monomer includes a fluorocarbon monomer.In some non-limiting examples, the monomer includes: a vinyl fluoridemoiety, a vinylidene fluoride moiety, a tetrafluoroethylene moiety, achlorotrifluoroethylene moiety, a hexafluoropropylene moiety, and/or afluorinated 1,3-dioxole moiety.

In some non-limiting examples, the monomer includes a monomer backboneand a functional group. In some non-limiting examples, the functionalgroup is bonded, either directly or via a linker group, to the monomerbackbone. In some non-limiting examples, the monomer includes the linkergroup, and the linker group is bonded to the monomer backbone and to thefunctional group. In some non-limiting examples, the monomer may includetwo or more functional groups, which may be the same or different fromone another. In such examples, each functional group may be bonded,either directly or via a linker group, to the monomer backbone. In somenon-limiting examples wherein two or more functional groups are present,two or more linker groups may also be present.

In some non-limiting examples, the molecular structure of at least oneof the materials of the patterning coating 210, which may be the firstmaterial and/or the second material, includes two or more differentmonomers. In other words, such molecular structure includes monomerspecies which have different molecular composition and/or molecularstructure than one another. Non-limiting examples of such molecularstructure include those represented by the following formula:

(Mon^(A))_(k)(Mon^(B))_(m)  Formula (I-1)

(Mon^(A))_(k)(Mon^(A))_(m)(Mon^(C))_(o)  Formula (I-2)

wherein Mon^(A), Mon^(B), and Mon^(C) each represents a monomer specie,and k, m, and o each represents an integer greater than 2. In somenon-limiting examples, k, m, and o each represents an integer of 2 to100, 2 to 50, 3 to 20, 3 to 15, 3 to 10, or 3 to 7. It will beappreciated that various non-limiting examples and descriptionsregarding monomer, Mon, may be applicable with respect to each ofMon^(A), Mon^(B), and Mon^(C).

In some non-limiting examples, the monomer is represented by thefollowing formula:

M-(L-R_(x))_(y)  Formula (II)

wherein M represents the monomer backbone unit, L represents the linkergroup, R represents the functional group, x is an integer of 1 to 4, andy is an integer of 1 to 3.

In some non-limiting examples, the linker group is represented by atleast one of: a single bond, O, N, NH, C, CH, CH₂, and S.

Various non-limiting examples of the functional group which have beendescribed herein may apply with respect to R of Formula II. In somenon-limiting examples, the functional group, R, includes an oligomerunit, and the oligomer unit further includes at least two functionalgroup monomer units. By way of non-limiting example, a functional groupmonomer unit may be CH₂ and/or CF₂. In some non-limiting examples, thefunctional group includes as CH₂CF₃ moiety. For example, such functionalgroup monomer units may be bonded together to form an alkyl and/orfluoroalkyl oligomer unit. In some non-limiting examples, the oligomerunit further includes a functional group terminal unit. By way ofnon-limiting example, the functional group terminal unit may be arrangedat a terminal end of the oligomer unit and bonded to a functional groupmonomer unit. In some non-limiting examples, the terminal end at whichthe functional group terminal unit is arranged may correspond a portionof the functional group that is distal to the monomer backbone unit.Non-limiting examples of the functional group terminal unit include CF₂Hand CF₃.

In some non-limiting examples, the monomer backbone unit, M, has a highsurface tension. In some non-limiting examples, the monomer backboneunit has a higher surface tension than at least one of the functionalgroup(s), R, bonded thereto. In some further non-limiting examples, themonomer backbone unit has a higher surface tension than any functionalgroup, R, bonded thereto.

In some non-limiting examples, the monomer backbone unit has a surfacetension of greater than about 25 dynes/cm, greater than about 30dynes/cm, greater than about 40 dynes/cm, greater than about 50dynes/cm, greater than about 75 dynes/cm, greater than about 100dynes/cm; greater than about 150 dynes/cm, greater than about 200dynes/cm, greater than about 250 dynes/cm, greater than about 500dynes/cm, greater than about 1,000 dynes/cm, greater than about 1,500dynes/cm, or greater than about 2,000 dynes/cm.

In some non-limiting examples, the monomer backbone unit includesphosphorus (P) and nitrogen (N). Non-limiting examples of such monomerbackbone unit is a phosphazene, in which there is a double bond betweenP and N and may be represented as “NP” or as “N═P”. In some non-limitingexamples, the monomer backbone unit includes silicon (Si) and oxygen(O). Non-limiting examples of such monomer backbone unit issilsesquioxane, which may be represented as SiO_(3/2).

In some non-limiting examples, at least a portion of the molecularstructure of the at least one of the materials of the patterning coating210, which may for example be the first material and/or the secondmaterial, is represented by the following formula:

(NP-(L-R_(x))_(y))_(n)  Formula (III)

In Formula (III), NP represents the phosphazene monomer backbone unit, Lrepresents the linker group, R represents the functional group, x is aninteger of 1 to 4, y is an integer of 1 to 3, and n is an integer of 2or greater.

In some non-limiting examples, the molecular structure of the firstmaterial and/or the second material is represented by Formula (III). Insome further non-limiting examples, at least one of the first materialand the second material is a cyclophosphazene. In some furthernon-limiting examples, the molecular structure of the cyclophosphazeneis represented by Formula (III).

In some non-limiting examples, L represents oxygen, x is 1, and Rrepresents a fluoroalkyl group. In some non-limiting examples, at leasta portion of the molecular structure of the at least one of thematerials of the patterning coating 210, which may for example be thefirst material and/or the second material, is represented by thefollowing formula:

(NP(OR_(f))₂)_(n)  Formula (IV)

wherein R_(f) represents the fluoroalkyl group, and n is an integer of 3to 7.

In some non-limiting examples, the fluoroalkyl group comprises at leastone of a CF₂ group, a CF₂H group, CH₂CF₃ group, and a CF₃ group. In somenon-limiting examples, the fluoroalkyl group is represented by thefollowing formula:

wherein p is an integer of 1 to 5; q is an integer of 6 to 20; and Zrepresents hydrogen or fluorine. In some non-limiting examples, p is 1and q is an integer of 6 to 20.

In some non-limiting examples, the fluoroalkyl group, R_(f), in Formula(IV) is represented by Formula (V).

In some non-limiting examples, at least a portion of the molecularstructure of the at least one of the materials of the patterning coating210, which may for example be the first material and/or the secondmaterial, is represented by the following formula:

(SiO_(3/2)-(L-R))_(n)  Formula (VI)

In Formula (VI), L represents the linker group, R represents thefunctional group, and n is an integer of 6-12.

In some non-limiting embodiments, L represents the presence of a singlebond, O, substituted alkyl, or unsubstituted alkyl. In some non-limitingexamples, n is 8, 10, or 12. In some non-limiting examples R comprises afunctional group with low surface tension. In some non-limitingexamples, R comprises a F-containing group and/or a Si-containing group.In some non-limiting examples, R comprises a fluorocarbon group and/or asiloxane containing group. In some non-limiting examples, R comprises aCF₂ group and/or a CF₂H group. In some non-limiting examples, Rcomprises a CF₂ and/or a CF₃ group. In some non-limiting examples, Rcomprises a CH₂CF₃ group. In some non-limiting examples, the materialrepresented by Formula (VI) is a polyoctahedral silsesquioxane.

In some non-limiting examples, at least a portion of the molecularstructure of the at least one of the materials of the patterning coating210, which may for example be the first material and/or the secondmaterial, is represented by the following formula:

(SiO_(3/2)—R_(f))_(n)  Formula (VII)

wherein n is an integer of 6-12, and Rf represents a fluoroalkyl group.In some non-limiting examples n is 8, 10, or 12. In some non-limitingexamples, Rf comprises a functional group with low surface tension. Insome non-limiting examples, Rf comprises a CF₂ moiety and/or a CF₂Hmoiety. In some non-limiting examples, Rf comprises a CF₂ moiety and/ora CF₃ moiety. In some non-limiting examples, Rf comprises a CH₂CF₃moiety. In some non-limiting examples, the material represented byFormula (VII) is a polyoctahedral silsesquioxane.

In some non-limiting examples, the fluoroalkyl group, Rf, in Formula(VII) is represented by Formula (V).

In some non-limiting examples, at least a portion of the molecularstructure of the at least one of the materials of the patterning coating210, which may for example be the first material and/or the secondmaterial, is represented by the following formula:

(SiO_(3/2)—(CH₂)_(x)(CF₃))_(n)  Formula (VIII)

In Formula (VIII), x is an integer of 1-5, and n is an integer of 6-12.In some non-limiting examples, n is 8, 10, or 12. In some non-limitingexamples, the compound represented by Formula (VIII) is a polyoctahedralsilsesquioxane.

In some non-limiting examples, the functional group, R, and/or thefluoroalkyl group, R_(f), may be selected independently upon eachoccurrence of such group in any of the foregoing formulae. It will alsobe appreciated that any of the foregoing formulae may represent asub-structure of the compound, and additional groups or moieties may bepresent, which are not explicitly shown in the above formulae. It willalso be appreciated that various formulae provided in the presentapplication may represent linear, branched, cyclic, cyclo-linear, and/orcross-linked structures.

In some non-limiting examples, the patterning coating 210 includes atleast one material represented by at least one of the followingFormulae: (I), (I-1), (I-2), (II), (III), (IV), (VI), (VII), and (VIII),and at least one material exhibiting at least one of the followingcharacteristics: (a) includes an aromatic hydrocarbon moiety, (b)includes an sp2 carbon, (c) includes a phenyl moiety, (d) has acharacteristic surface energy greater than about 20 dynes/cm, and (e)exhibits photoluminescence, including, by way of non-limiting example,exhibiting photoluminescence at a wavelength greater than about 365 nmupon being irradiated by an excitation radiation having a wavelength ofabout 365 nm.

In some non-limiting examples, the patterning coating may furtherinclude a third material, which is different from the first material andthe second material. In some non-limiting examples, the third materialincludes, a common monomer with at least one of the first material andthe second material.

In some non-limiting examples, the difference in the sublimationtemperature of the two or more materials of the patterning coating 210,including but not limited to such difference between the first materialand the second material, is less than or equal to about 5° C., about 10°C., about 15° C., about 20° C., about 30° C., about 40° C., or about 50°C. In some non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the first materialand/or the second material, includes at least one of F and Si, and thesublimation temperatures of the materials of the patterning coating 210differ by less than or equal to about 5° C., about 10° C., about 15° C.,about 20° C., about 25° C., about 40° C., or about 50° C. In somenon-limiting examples, at least one of the materials of the patterningcoating 210, which for example may be the first material and/or thesecond material, includes at least one of a fluorocarbon moiety and asiloxane moiety, and the sublimation temperatures of the materials ofthe patterning coating 210 differ by less than or equal to about 5° C.,about 10° C., about 15° C., about 20° C., about 25° C., about 40° C., orabout 50° C.

In some non-limiting examples, the difference in the melting temperatureof the two or more materials of the patterning coating 210, includingbut not limited to such difference between the first NIC material andthe second NIC material, is less than or equal to about 5° C., about 10°C., about 15° C., about 20° C., about 30° C., about 40° C., or about 50°C. In some non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the first materialand/or the second material, includes at least one of F and Si, and themelting temperatures of the materials of the patterning coating 210differ by less than or equal to about 5° C., about 10° C., about 15° C.,about 20° C., about 25° C., about 40° C., or about 50° C. In somenon-limiting examples, at least one of the materials of the patterningcoating 210, which for example may be the first material and/or thesecond material, includes at least one of a fluorocarbon moiety and asiloxane moiety, and the melting temperatures of the materials of thepatterning coating 210 differ by less than or equal to about 5° C.,about 10° C., about 15° C., about 20° C., about 25° C., about 40° C., orabout 50° C.

In some non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the first materialand/or the second material, has a low characteristic surface energy. Insome non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the first materialand/or the second material, has a low characteristic surface energy, andat least one of the materials of the patterning coating 210 contains atleast one of F and Si. In some non-limiting examples, at least one ofthe materials of the patterning coating 210, which for example may bethe first material and/or the second material, has a low characteristicsurface energy and contains at least one of F and Si, and at least oneof the other materials of the patterning coating 210 has a highcharacteristic surface energy. In some non-limiting examples, thepresence of F and Si may be accounted for by the presence of afluorocarbon moiety and a siloxane moiety, respectively. By way ofnon-limiting example, at least one of the materials, which maycorrespond to the second material, may have a low characteristic surfaceenergy of about: 10-20 dynes/cm, 12-20 dynes/cm, 15-20 dynes/cm, or17-19 dynes/cm, and an another material, which may correspond to thefirst material, may have a high characteristic surface energy of about:20-100 dynes/cm, 20-50 dynes/cm, or 25-45 dynes/cm. In some non-limitingexamples, at least one of the materials contain at least one of F andSi. By way of non-limiting example, the second material may contain atleast one of F and Si.

In some non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the second material,has a low characteristic surface energy of less than about 20 dynes/cmand includes at least one of F and/or Si, and at least one of the othermaterials of the patterning coating 210, which for example may be thefirst material, has a characteristic surface energy of greater thanabout 20 dynes/cm.

In some non-limiting examples, at least one of the materials of thepatterning coating 210, which for example may be the second material,has a low characteristic surface energy of less than about 20 dynes/cmand includes at least one of a fluorocarbon moiety and a siloxanemoiety, and at least one of the other materials of the patterningcoating 210, which for example may be the first material, has acharacteristic surface energy of greater than about 20 dynes/cm.

In some non-limiting examples, the surface energy of each of the two ormore materials of the patterning coating 210, including but not limitedto those of the first material and the second material, is less thanabout 25 dynes/cm, less than about 21 dynes/cm, less than about 20dynes/cm, less than about 19 dynes/cm, less than about 18 dynes/cm, lessthan about 17 dynes/cm, less than about 16 dynes/cm, less than about 15dynes/cm, less than about 14 dynes/cm, less than about 13 dynes/cm, lessthan about 12 dynes/cm, less than about 11 dynes/cm, or less than about10 dynes/cm.

In some non-limiting examples, the refractive index at a wavelength of500 nm and/or 460 nm of at least one of the materials of the patterningcoating 210, including but not limited to those of the first materialand the second material, is less than about 1.5, less than about 1.45,less than about 1.44, less than about 1.43, less than about 1.42, orless than about 1.41. In some non-limiting examples, the patterningcoating 210 includes at least one material which exhibitsphotoluminescence, and the patterning coating 210 has a refractive indexat a wavelength of 500 nm and/or 460 nm of less than about 1.5, lessthan about 1.45, less than about 1.44, less than about 1.43, less thanabout 1.42, or less than about 1.41.

In some non-limiting examples, the molecular weight of at least one ofthe materials of the patterning coating 210, including but not limitedto those of the first material and the second material, is greater thanabout 750, greater than about 1,000, greater than about 1,500, greaterthan about 2,000, greater than about 2,500, or greater than about 3,000.

In some non-limiting examples, the molecular weight of at least one ofthe materials of the patterning coating 210, including but not limitedto those of the first material and the second material, is less thanabout 10,000, less than about 7,500, or less than about 5,000.

In some non-limiting examples, the NIC includes two or more materialsexhibiting similar thermal properties as one another, wherein at leastone of the materials exhibits photoluminescence. In some non-limitingexamples, the patterning coating includes two or more materials withsimilar thermal properties as one another, wherein at least one of thematerials exhibits photoluminescence, and wherein at least one of thematerials, or all of the materials, comprise fluorine (F) and/or silicon(Si). In some non-limiting examples, the patterning coating includes twoor more materials with similar thermal properties as one another,wherein at least one of the materials exhibits photoluminescence at awavelength greater than 365 nm when excited by a radiation having anexcitation wavelength of 365 nm, and wherein at least one of thematerials, or all of the materials, comprise fluorine (F) and/or silicon(Si). In some non-limiting examples, similar thermal properties mayinclude, but are not limited to, the melting temperature and/or thesublimation temperature of the materials.

In some non-limiting examples, the patterning coating includes two ormore materials having at least one common element or at least one commonsub-structure, wherein at least one of the materials exhibitsphotoluminescence. In some non-limiting examples, at least one of thematerials, or all of the materials, comprise fluorine (F) and/or silicon(Si). In some non-limiting examples, patterning coating includes two ormore materials with similar thermal properties as one another, whereinat least one of the materials exhibits photoluminescence at a wavelengthgreater than 365 nm when excited by a radiation having an excitationwavelength of 365 nm, and wherein at least one of the materials, or allof the materials, comprise fluorine (F) and/or silicon (Si). In somenon-limiting examples, the at least one common element includes, but isnot limited to, fluorine (F) and/or silicon (Si). In some non-limitingexamples, the at least one common sub-structure includes, but is notlimited to, fluorocarbon, fluoroalkyl and/or siloxyl.

In one aspect, a method for manufacturing an opto-electronic device isprovided. The method includes: (i) depositing a nucleation inhibitingcoating (NIC) on a first layer surface of the device in a first portionof a lateral aspect thereof; and (ii) depositing a conductive coating ona second layer surface of the device in a second portion of the lateralaspect thereof. The initial sticking probability for forming theconductive coating onto a surface of the patterning coating in the firstportion, is substantially less than the initial sticking probability forforming the conductive coating onto the surface in the second portion,such that the surface of the patterning coating in the first portion issubstantially devoid of the conductive coating. The NIC deposited on thefirst layer surface of the device comprises a first material and asecond material.

In some non-limiting examples, depositing the patterning coating on thefirst layer surface of the device includes providing a mixturecontaining two or more materials, and causing the mixture to bedeposited onto the first layer surface of the device to form the NICthereon. In some non-limiting examples, the mixture contains the firstmaterial and the second material. In such non-limiting examples, thefirst material and the second material are both deposited onto the firstlayer surface to form the patterning coating thereon.

In some non-limiting examples, the mixture containing the two or morepatterning coating materials is deposited onto the first layer surfaceof the device by a physical vapor deposition process. Non-limitingexamples of such deposition process include thermal evaporation. In somenon-limiting examples, the patterning coating is formed by evaporatingthe mixture from a common evaporation source and causing the mixture tobe deposited on the first layer surface of the device. In other words,the mixture containing, by way of non-limiting example, the firstmaterial and the second material, may be placed in a common crucibleand/or evaporation source to heat the mixture under vacuum. Once theevaporation temperature of the materials is reached or is exceeded, thevapor flux generated from the mixture is directed towards the firstlayer surface of the device to cause the deposition of the patterningcoating thereon.

In some non-limiting examples, the patterning coating is deposited byco-evaporation of the first material and the second material. In somefurther non-limiting examples, the first material is evaporated from afirst crucible and/or first evaporation source, and the second materialis concurrently evaporated from a second crucible and/or secondevaporation source such that the mixture is formed in the vapor phase,and is co-deposited onto the first layer surface to provide thepatterning coating thereon.

In order to evaluate properties of certain example patterning coatingcontaining at least two materials, the following experiment wasconducted.

A series of samples were fabricated by depositing, in vacuo,approximately 20 nm thick layer of an organic material typically used asa hole transport layer material, followed by depositing, over theorganic material layer, a nucleation modifying coating having varyingcompositions as summarized in the table below.

Sample Identifier Composition of Nucleation Modifying Coating Sample 1NIC Material (15 nm) Sample 2 NIC Material: PL Material 1 (0.5%, 15 nm)Sample 3 NIC Material: PL Material 2 (0.5%, 15 nm) Sample 4 PL Material1 (10 nm) Sample 5 PL Material 2 (10 nm) Sample 6 No nucleationmodifying coating provided

In the present example, NIC Material was selected such that, for examplewhen deposited as a thin film, the NIC Material exhibits a low initialsticking probability with respect to the material(s) of the conductivecoating, which may include Ag and/or Yb by way of example.

In the present example, PL Material 1 and PL Material 2 were selectedsuch that, for example when deposited as a thin film, each of PLMaterial 1 and PL Material 2 exhibits photoluminescence detectable bystandard optical measurement techniques (e.g. fluorescence microscopy).

In the above table, Sample 1 is a comparison sample in which thenucleation modifying coating was provided by depositing the NICMaterial. Sample 2 is an example sample in which the nucleationmodifying coating was provided by co-depositing the NIC Material and PLMaterial 1 together to form a coating containing PL Material 1 in aconcentration of 0.5 vol. %. Sample 3 is an example sample in which thenucleation modifying coating was provided by co-depositing the NICMaterial and PL Material 2 together to form a coating containing PLMaterial 2 in a concentration of 0.5 vol. %. Sample 4 is a comparisonsample in which the nucleation modifying coating was provided bydepositing PL Material 1. Sample 5 is a comparison sample in which thenucleation modifying coating was provided by depositing PL Material 2.Sample 6 is a comparison sample in which no nucleation modifying coatingwas provided over the organic material layer.

The photoluminescence (PL) response of each of Sample 1, Sample 2,Sample 3, and Sample 6 was measured and plotted as shown in FIG. 43 . Itwas observed that the PL intensities of Sample 1 and Sample 6 wereidentical, thus indicating that NIC Material does not exhibitphotoluminescence in the detected wavelength range. For sake ofsimplicity, the PL intensity of Sample 6 was not plotted in FIG. 43 .For each of Sample 2 and Sample 3, photoluminescence was detected inwavelengths of around 500 nm to about 600 nm.

Each of Samples 1 to 6 was then subjected to an open mask deposition ofYb, followed by Ag. Specifically, the surfaces of the nucleationmodifying coatings formed by the above materials were subjected to anopen mask deposition of Yb, followed by Ag. More specifically, eachsample was subjected to a Yb vapor flux until a reference thickness ofabout 1 nm was reached, followed by an Ag vapor flux until a referencethickness of about 12 nm was reached. Once the samples were fabricated,optical transmission measurements were taken to determine the relativeamount of Yb and/or Ag deposited on the surface of the nucleationmodifying coatings. As will be appreciated, samples having relativelylittle to no metal present thereon are substantially transparent, whilesamples with metal deposited thereon, particularly as a closed film,generally exhibits a substantially lower light transmittance.Accordingly, the relative performance of various example coatings as anPATTERNING COATING 210 may be assessed by measuring the lighttransmission through the samples, which directly correlates to theamount or thickness of metallic coating deposited thereon from the Yband/or Ag deposition. The reduction in optical transmittance at awavelength of 460 nm after each sample was subjected to an Ag vapor fluxwas measured and summarized in a table below.

Sample Identifier Transmittance Reduction (%) at λ = 600 nm Sample 1 <1%Sample 2 <2% Sample 3 <1% Sample 4 43% Sample 5 47% Sample 6 45%

Specifically, the transmittance reduction (%) for each sample in thetable above was determined by measuring the light transmission throughthe sample before and after the exposure to the Yb and Ag vapor flux,and expressing the reduction in the light transmittance as a percentage.

As can be seen, Sample 1, Sample 2, and Sample 3 exhibited relativelylow transmittance reduction of less than 2%, or in the case of Samples 1and 3, less than 1%. Accordingly, it is observed that the nucleationmodifying coatings provided for these samples acted as NICs. Sample 4,Sample 5, and Sample 6 each exhibited transmittance reduction of 43%,47%, and 45%, respectively. Accordingly, the nucleation modifyingcoatings provided for these samples acted as NPCs.

Moreover, it was found that Sample 1 in which the NIC substantiallycontained only the NIC Material did not exhibit photoluminescence.However, Sample 2 and Sample 3 in which the NIC contained PL Material 1and PL Material 2, respectively, were found to exhibit photoluminescencewhile also acting as NIC by providing a surface with low initialsticking probability against the conductive coating material.

As used in this and other examples described herein, a reference layerthickness refers to a layer thickness of a metallic coating that isdeposited on a reference surface exhibiting a high initial stickingprobability S₀ (e.g., a surface with an initial sticking probability S₀of about and/or close to 1.0). Specifically, for these examples, thereference surface was a surface of a quartz crystal positioned inside adeposition chamber for monitoring a deposition rate and the referencelayer thickness. In other words, the reference layer thickness does notindicate an actual thickness of the metallic coating deposited on atarget surface (i.e., a surface of the PATTERNING COATING 210). Rather,the reference layer thickness refers to the layer thickness of themetallic coating that would be deposited on the reference surface uponsubjecting the target surface and reference surface to identical vaporflux of the metallic material for the same deposition period (i.e. thesurface of the quartz crystal). As would be appreciated, in the eventthat the target surface and reference surface are not subjected toidentical vapor flux simultaneously during deposition, an appropriatetooling factor may be used to determine and monitor the referencethickness.

Deposited Layer

In some non-limiting examples, in the second portion 402 of the lateralaspect of the device 1000, a deposited layer 1030 comprising a depositedmaterial 1231 may be disposed as a closed coating 1040 on an exposedlayer surface 11 of an underlying layer, including without limitation,the substrate 10.

In some non-limiting examples, the deposited layer 1030 may comprise adeposited material 1231.

In some non-limiting examples, the deposited material 1231 may comprisean element selected from at least one of: potassium (K), sodium (Na),lithium (Li), barium (Ba), cesium (Cs), Yb, Ag, gold (Au), Cu, aluminum(Al), Mg, Zn, Cd, tin (Sn), or yttrium (Y). In some non-limitingexamples, the element may comprise at least one of: K, Na, Li, Ba, Cs,Yb, Ag, Au, Cu, Al, and/or Mg. In some non-limiting examples, theelement may comprise at least one of: Cu, Ag, and/or Au. In somenon-limiting examples, the element may be Cu. In some non-limitingexamples, the element may be Al. In some non-limiting examples, theelement may comprise at least one of: Mg, Zn, Cd, or Yb. In somenon-limiting examples, the element may comprise at least one of: Mg, Ag,Al, Yb, or Li. In some non-limiting examples, the element may compriseat least one of: Mg, Ag, or Yb. In some non-limiting examples, theelement may comprise at least one of: Mg, or Ag. In some non-limitingexamples, the element may be Ag.

In some non-limiting examples, the deposited material 1231 may be and/orcomprise a pure metal. In some non-limiting examples, the depositedmaterial 1231 may be at least one of: pure Ag or substantially pure Ag.In some non-limiting examples, the substantially pure Ag may have apurity of at least one of at least about: 95%, 99%, 99.9%, 99.99%,99.999%, or 99.9995%. In some non-limiting examples, the depositedmaterial 1231 may be at least one of: pure Mg or substantially pure Mg.In some non-limiting examples, the substantially pure Mg may have apurity of at least one of at least about: 95%, 99%, 99.9%, 99.99%,99.999%, or 99.9995%.

In some non-limiting examples, the deposited material 1231 may comprisean alloy. In some non-limiting examples, the alloy may be at least oneof: an Ag-containing alloy, an Mg-containing alloy, or anAgMg-containing alloy. In some non-limiting examples, theAgMg-containing alloy may have an alloy composition that may range fromabout 1:10 (Ag:Mg) to about 10:1 by volume.

In some non-limiting examples, the deposited material 1231 may compriseother metals in place of, and/or in combination with, Ag. In somenon-limiting examples, the deposited material 1231 may comprise an alloyof Ag with at least one other metal. In some non-limiting examples, thedeposited material 1231 may comprise an alloy of Ag with at least oneof: Mg, or Yb. In some non-limiting examples, such alloy may be a binaryalloy having a composition between about 5-95 vol. % Ag, with theremainder being the other metal. In some non-limiting examples, thedeposited material 1231 may comprise Ag and Mg. In some non-limitingexamples, the deposited material 1231 may comprise an Ag:Mg alloy havinga composition between about 1:10-10:1 by volume. In some non-limitingexamples, the deposited material 1231 may comprise Ag and Yb. In somenon-limiting examples, the deposited material 1231 may comprise a Yb:Agalloy having a composition between about 1:20-10:1 by volume. In somenon-limiting examples, the deposited material 1231 may comprise Mg andYb. In some non-limiting examples, the deposited material 1231 maycomprise an Mg:Yb alloy. In some non-limiting examples, the depositedmaterial 1231 may comprise Ag, Mg, and Yb. In some non-limitingexamples, the deposited layer 1030 may comprise an Ag:Mg:Yb alloy.

In some non-limiting examples, the deposited layer 1030 may comprise atleast one additional element. In some non-limiting examples, suchadditional element may be a non-metallic element. In some non-limitingexamples, the non-metallic element may be at least one of: O, S, N, orC. It will be appreciated by those having ordinary skill in the relevantart that, in some non-limiting examples, such additional element(s) maybe incorporated into the deposited layer 1030 as a contaminant, due tothe presence of such additional element(s) in the source material,equipment used for deposition, and/or the vacuum chamber environment. Insome non-limiting examples, the concentration of such additionalelement(s) may be limited to be below a threshold concentration. In somenon-limiting examples, such additional element(s) may form a compoundtogether with other element(s) of the deposited layer 1030. In somenon-limiting examples, a concentration of the non-metallic element inthe deposited material 1231 may be no more than at least one of about:1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, or 0.0000001%. Insome non-limiting examples, the deposited layer 1030 may have acomposition in which a combined amount of O and C therein may be no morethan at least one of about: 10%, 5%, 1%, 0.1%, 0.01%, 0.001%, 0.0001%,0.00001%, 0.000001%, or 0.0000001%.

It has now been found, somewhat surprisingly, that reducing aconcentration of certain non-metallic elements in the deposited layer1030, particularly in cases wherein the deposited layer 1030 may besubstantially comprised of metal(s), and/or metal alloy(s), mayfacilitate selective deposition of the deposited layer 1030. Withoutwishing to be bound by any particular theory, it may be postulated thatcertain non-metallic elements, such as, by way of non-limiting example,O, or C, when present in the vapor flux 1232 of the deposited layer1030, and/or in the deposition chamber, and/or environment, may bedeposited onto the surface of the patterning coating 210 to act asnucleation sites for the metallic element(s) of the deposited layer1030. It may be postulated that reducing a concentration of suchnon-metallic elements that could act as nucleation sites may facilitatereducing an amount of deposited material 1231 deposited on the exposedlayer surface 11 of the patterning coating 210.

In some non-limiting examples, the deposited material 1231 may bedeposited on a metal-containing underlying layer. In some non-limitingexamples, the deposited material 1231 and the underlying layerthereunder may comprise a common metal.

In some non-limiting examples, the deposited layer 1030 may comprise aplurality of layers of the deposited material 1231. In some non-limitingexamples, the deposited material 1231 of a first one of the plurality oflayers may be different from the deposited material 1231 of a second oneof the plurality of layers. In some non-limiting examples, the depositedlayer 1030 may comprise a multilayer coating. In some non-limitingexamples, such multilayer coating may be at least one of: Yb/Ag, Yb/Mg,Yb/Mg:Ag, Yb/Yb:Ag, Yb/Ag/Mg, or Yb/Mg/Ag.

In some non-limiting examples, the deposited material 1231 may comprisea metal having a bond dissociation energy, of no more than at least oneof about: 300 kJ/mol, 200 kJ/mol, 165 kJ/mol, 150 kJ/mol, 100 kJ/mol, 50kJ/mol, or 20 kJ/mol.

In some non-limiting examples, the deposited material 1231 may comprisea metal having an electronegativity that is no more than at least one ofabout: 1.4, 1.3, or 1.2.

In some non-limiting examples, a sheet resistance of the deposited layer1030 may generally correspond to a sheet resistance of the depositedlayer 1030, measured or determined in isolation from other components,layers, and/or parts of the device 100. In some non-limiting examples,the deposited layer 1030 may be formed as a thin film. Accordingly, insome non-limiting examples, the characteristic sheet resistance for thedeposited layer 1030 may be determined, and/or calculated based on thecomposition, thickness, and/or morphology of such thin film. In somenon-limiting examples, the sheet resistance may be no more than at leastone of about: 10Ω/□, 5Ω/□, 1Ω/□, 0.5Ω/□, 0.2Ω/□, or 0.1Ω/□.

In some non-limiting examples, the deposited layer 1030 may be disposedin a pattern that may be defined by at least one region therein that issubstantially devoid of a closed coating 1040 of the deposited layer1030. In some non-limiting examples, the at least one region mayseparate the deposited layer 1030 into a plurality of discrete fragmentsthereof. In some non-limiting examples, each discrete fragment of thedeposited layer 1030 may be a distinct second portion 402. In somenon-limiting examples, the plurality of discrete fragments of thedeposited layer 1030 may be physically spaced apart from one another inthe lateral aspect thereof. In some non-limiting examples, at least twoof such plurality of discrete fragments of the deposited layer 1030 maybe electrically coupled. In some non-limiting examples, at least two ofsuch plurality of discrete fragments of the deposited layer 1030 may beeach electrically coupled with a common conductive layer or coating,including without limitation, the underlying surface, to allow the flowof electrical current between them. In some non-limiting examples, atleast two of such plurality of discrete fragments of the deposited layer1030 may be electrically insulated from one another.

Selective Deposition Using Patterning Coatings

FIG. 11 is an example schematic diagram illustrating a non-limitingexample of an evaporative deposition process, shown generally at 1100,in a chamber 1110, for selectively depositing a patterning coating 210onto a first portion 401 of an exposed layer surface 11 of theunderlying layer.

In the process 1100, a quantity of a patterning material 1111 is heatedunder vacuum, to evaporate, and/or sublime the patterning material 1111.In some non-limiting examples, the patterning material 1111 may compriseentirely, and/or substantially, a material used to form the patterningcoating 210. In some non-limiting examples, such material may comprisean organic material.

An evaporated flux 1112 of the patterning material 1111 may flow throughthe chamber 1110, including in a direction indicated by arrow 111,toward the exposed layer surface 11. When the evaporated flux 1112 isincident on the exposed layer surface 11, the patterning coating 210 maybe formed thereon.

In some non-limiting examples, as shown in the figure for the process1100, the patterning coating 210 may be selectively deposited only ontoa portion, in the example illustrated, the first portion 401, of theexposed layer surface 11, by the interposition, between the evaporatedflux 1112 and the exposed layer surface 11, of a shadow mask 1115, whichin some non-limiting examples, may be an FMM. In some non-limitingexamples, such a shadow mask 1115 may, in some non-limiting examples, beused to form relatively small features, with a feature size on the orderof tens of microns or smaller.

The shadow mask 1115 may have at least one aperture 1116 extendingtherethrough such that a part of the evaporated flux 1112 passes throughthe aperture 1116 and may be incident on the exposed layer surface 11 toform the patterning coating 210. Where the evaporated flux 1112 does notpass through the aperture 1116 but is incident on the surface 1117 ofthe shadow mask 1115, it is precluded from being disposed on the exposedlayer surface 11 to form the patterning coating 210. In somenon-limiting examples, the shadow mask 1115 may be configured such thatthe evaporated flux 1112 that passes through the aperture 1116 may beincident on the first portion 401 but not the second portion 402. Thesecond portion 402 of the exposed layer surface 11 may thus besubstantially devoid of the patterning coating 210. In some non-limitingexamples (not shown), the patterning material 1111 that is incident onthe shadow mask 1115 may be deposited on the surface 1117 thereof.

Accordingly, a patterned surface may be produced upon completion of thedeposition of the patterning coating 210.

FIG. 12 is an example schematic diagram illustrating a non-limitingexample of a result of an evaporative process, shown generally at 1200_(a), in a chamber 1110, for selectively depositing a closed coating1040 of a deposited layer 1030 onto the second portion 402 of an exposedlayer surface 11 of the underlying layer that is substantially devoid ofthe patterning coating 210 that was selectively deposited onto the firstportion 401, including without limitation, by the evaporative process1100 of FIG. 11 .

In some non-limiting examples, the deposited layer 1030 may be comprisedof a deposited material 1231, in some non-limiting examples, comprisingat least one metal. It will be appreciated by those having ordinaryskill in the relevant art that typically, the vaporization temperatureof an organic material is low relative to the vaporization temperatureof metals, such as may be employed as a deposited material 1231.

Thus, in some non-limiting examples, there may be fewer constraints inemploying a shadow mask 1115 to selectively deposit a patterning coating210 in a pattern, relative to directly patterning the deposited layer1030 using such shadow mask 1115.

Once the patterning coating 210 has been deposited on the first portion401 of the exposed layer surface 11 of the underlying layer, a closedcoating 1040 of the deposited material 1231 may be deposited, on thesecond portion 402 of the exposed layer surface 11 that is substantiallydevoid of the patterning coating 210, as the deposited layer 1030.

In the process 1200 _(a), a quantity of the deposited material 1231 maybe heated under vacuum, to evaporate, and/or sublime the depositedmaterial 1231. In some non-limiting examples, the deposited material1231 may comprise entirely, and/or substantially, a material used toform the deposited layer 1030.

An evaporated flux 1232 of the deposited material 1231 may be directedinside the chamber 1110, including in a direction indicated by arrow121, toward the exposed layer surface 11 of the first portion 401 and ofthe second portion 402. When the evaporated flux 1232 is incident on thesecond portion 402 of the exposed layer surface 11, a closed coating1040 of the deposited material 1231 may be formed thereon as thedeposited layer 1030.

In some non-limiting examples, deposition of the deposited material 1231may be performed using an open mask and/or mask-free deposition process.

It will be appreciated by those having ordinary skill in the relevantart that, contrary to that of a shadow mask 1115, the feature size of anopen mask may be generally comparable to the size of a device 100 beingmanufactured.

It will be appreciated by those having ordinary skill in the relevantart that, in some non-limiting examples, the use of an open mask may beomitted. In some non-limiting examples, an open mask deposition processdescribed herein may alternatively be conducted without the use of anopen mask, such that an entire target exposed layer surface 11 may beexposed.

Indeed, as shown in FIG. 12 , the evaporated flux 1232 may be incidentboth on an exposed layer surface 11 of the patterning coating 210 acrossthe first portion 401 as well as the exposed layer surface 11 of theunderlying layer across the second portion 402 that is substantiallydevoid of the patterning coating 210.

Since the exposed layer surface 11 of the patterning coating 210 in thefirst portion 401 may exhibit a relatively low initial stickingprobability against the deposition of the deposited material 1231relative to the exposed layer surface 11 of the underlying layer in thesecond portion 402, the deposited layer 1030 may be selectivelydeposited substantially only on the exposed layer surface 11, of theunderlying layer in the second portion 402, that is substantially devoidof the patterning coating 210. By contrast, the evaporated flux 1232incident on the exposed layer surface 11 of the patterning coating 210across the first portion 401 may tend to not be deposited (as shown1233), and the exposed layer surface 11 of the patterning coating 210across the first portion 401 may be substantially devoid of a closedcoating 1040 of the deposited layer 1030.

In some non-limiting examples, an initial deposition rate, of theevaporated flux 1232 on the exposed layer surface 11 of the underlyinglayer in the second portion 402, may exceed at least one of about: 200times, 550 times, 900 times, 1,000 times, 1,500 times, 1,900 times, or2,000 times an initial deposition rate of the evaporated flux 1232 onthe exposed layer surface 11 of the patterning coating 210 in the firstportion 401.

Thus, the combination of the selective deposition of a patterningcoating 210 in FIG. 11 using a shadow mask 1115 and the open mask and/ormask-free deposition of the deposited material 1231 may result in aversion 1200 _(a) of the device 100 shown in FIG. 12 .

After selective deposition of the patterning coating 210 across thefirst portion 401, a closed coating 1040 of the deposited material 1231may be deposited over the device 1200 _(a) as the deposited layer 1030,in some non-limiting examples, using an open mask and/or a mask-freedeposition process, but may remain substantially only within the secondportion 402, which is substantially devoid of the patterning coating210.

The patterning coating 210 may provide, within the first portion 401, anexposed layer surface 11 with a relatively low initial stickingprobability, against the deposition of the deposited material 1231, andthat is substantially less than the initial sticking probability,against the deposition of the deposited material 1231, of the exposedlayer surface 11 of the underlying material of the device 1200 _(a)within the second portion 402.

Thus, the first portion 401 may be substantially devoid of a closedcoating 1040 of the deposited material 1231.

While the present disclosure contemplates the patterned deposition ofthe patterning coating 210 by an evaporative deposition process,involving a shadow mask 1115, those having ordinary skill in therelevant art will appreciate that, in some non-limiting examples, thismay be achieved by any suitable deposition process, including withoutlimitation, a micro-contact printing process.

While the present disclosure contemplates the patterning coating 210being an NIC, those having ordinary skill in the relevant art willappreciate that, in some non-limiting examples, the patterning coating210 may be an NPC 1420. In such examples, the portion (such as, withoutlimitation, the first portion 401) in which the NPC 1420 has beendeposited may, in some non-limiting examples, have a closed coating 1040of the deposited material 1231, while the other portion (such as,without limitation, the second portion 402) may be substantially devoidof a closed coating 1040 of the deposited material 1231.

In some non-limiting examples, an average layer thickness of thepatterning coating 210 and of the deposited layer 1030 depositedthereafter may be varied according to a variety of parameters, includingwithout limitation, a given application and given performancecharacteristics. In some non-limiting examples, the average layerthickness of the patterning coating 210 may be comparable to, and/orsubstantially no more than an average layer thickness of the depositedlayer 1030 deposited thereafter. Use of a relatively thin patterningcoating 210 to achieve selective patterning of a deposited layer 1030may be suitable to provide flexible devices 1000. In some non-limitingexamples, a relatively thin patterning coating 210 may provide arelatively planar surface on which a barrier coating or other thin filmencapsulation (TFE) layer 2250, may be deposited. In some non-limitingexamples, providing such a relatively planar surface for application ofsuch barrier coating 1950 may increase adhesion thereof to such surface.

Edge Effects

Patterning Coating Transition Region

Turning to FIG. 13A, there may be shown a version 1300 _(a) of thedevice 1000 of FIG. 10 that may show in exaggerated form, an interfacebetween the patterning coating 210 in the first portion 401 and thedeposited layer 1030 in the second portion 402. FIG. 13B may show thedevice 1300 _(a) in plan.

As may be better seen in FIG. 13B, in some non-limiting examples, thepatterning coating 210 in the first portion 401 may be surrounded on allsides by the deposited layer 1030 in the second portion 402, such thatthe first portion 401 may have a boundary that is defined by the furtherextent or edge 1315 of the patterning coating 210 in the lateral aspectalong each lateral axis. In some non-limiting examples, the patterningcoating edge 1315 in the lateral aspect may be defined by a perimeter ofthe first portion 401 in such aspect.

In some non-limiting examples, the first portion 401 may comprise atleast one patterning coating transition region 401 _(t), in the lateralaspect, in which a thickness of the patterning coating 210 maytransition from a maximum thickness to a reduced thickness. The extentof the first portion 401 that does not exhibit such a transition may beidentified as a patterning coating non-transition part 401 _(n) of thefirst portion 401. In some non-limiting examples, the patterning coating210 may form a substantially closed coating 1040 in the patterningcoating non-transition part 401 _(n) of the first portion 401.

In some non-limiting examples, the patterning coating transition region401 _(t) may extend, in the lateral aspect, between the patterningcoating non-transition part 401 _(n) of the first portion 401 and thepatterning coating edge 1315.

In some non-limiting examples, in plan, the patterning coatingtransition region 401 _(t) may surround, and/or extend along a perimeterof, the patterning coating non-transition part 401 _(n) of the firstportion 401.

In some non-limiting examples, along at least one lateral axis, thepatterning coating non-transition part 401 _(n) may occupy the entiretyof the first portion 401, such that there is no patterning coatingtransition region 401 _(t) between it and a second portion 402.

As illustrated in FIG. 13A, in some non-limiting examples, thepatterning coating 210 may have an average film thickness d₂ in thepatterning coating non-transition part 401 _(n) of the first portion 401that may be in a range of at least one of between about: 1-100 nm, 2-50nm, 3-30 nm, 4-20 nm, 5-15 nm, 5-10 nm, or 1-10 nm. In some non-limitingexamples, the average film thickness d₂ of the patterning coating 210 inthe patterning coating non-transition part 401 _(n) of the first portion401 may be substantially the same, or constant, thereacross. In somenon-limiting examples, an average layer thickness d₂ of the patterningcoating 210 may remain, within the patterning coating non-transitionpart 401 _(n), within at least one of about: 95%, or 90% of the averagefilm thickness d₂ of the patterning coating 210.

In some non-limiting examples, the average film thickness d₂ may bebetween about 1-100 nm. In some non-limiting examples, the average filmthickness d₂ may be no more than at least one of about: 80 nm, 60 nm, 50nm, 40 nm, 30 nm, 20 nm, 15 nm, or 10 nm. In some non-limiting examples,the average film thickness d₂ of the patterning coating 210 may exceedat least one of about: 3 nm, 5 nm, or 8 nm.

In some non-limiting examples, the average film thickness d₂ of thepatterning coating 210 in the patterning coating non-transition part 401_(n) of the first portion 401 may be no more than about 10 nm. Withoutwishing to be bound by any particular theory, it has been found,somewhat surprisingly, that an average film thickness d₂ of thepatterning coating 210 that exceeds zero and is no more than about 10 nmmay, at least in some non-limiting examples, provide certain advantagesfor achieving, by way of non-limiting example, enhanced patterningcontrast of the deposited layer 1030, relative to a patterning coating210 having an average film thickness d₂ in the patterning coatingnon-transition part 401 _(n) of the first portion 401 in excess of 10nm.

In some non-limiting examples, the patterning coating 210 may have apatterning coating thickness that decreases from a maximum to a minimumwithin the patterning coating transition region 401 _(t). In somenon-limiting examples, the maximum may be at, and/or proximate to, aboundary between the patterning coating transition region 401 _(t) andthe patterning coating non-transition part 401 _(n) of the first portion401. In some non-limiting examples, the minimum may be at, and/orproximate to, the patterning coating edge 1315. In some non-limitingexamples, the maximum may be the average film thickness d₂ in thepatterning coating non-transition part 401 _(n) of the first portion401. In some non-limiting examples, the maximum may be no more than atleast one of about: 95% or 90% of the average film thickness d₂ in thepatterning coating non-transition part 401 _(n) of the first portion401. In some non-limiting examples, the minimum may be in a range ofbetween about 0-0.1 nm.

In some non-limiting examples, a profile of the patterning coatingthickness in the patterning coating transition region 401 _(t) may besloped, and/or follow a gradient. In some non-limiting examples, suchprofile may be tapered. In some non-limiting examples, the taper mayfollow a linear, non-linear, parabolic, and/or exponential decayingprofile.

In some non-limiting examples, the patterning coating 210 may completelycover the underlying surface in the patterning coating transition region401 _(t). In some non-limiting examples, at least a part of theunderlying layer may be left uncovered by the patterning coating 210 inthe patterning coating transition region 401 _(t). In some non-limitingexamples, the patterning coating 210 may comprise a substantially closedcoating 1040 in at least a part of the patterning coating transitionregion 401 _(t) and/or at least a part of the patterning coatingnon-transition part 401 _(n).

In some non-limiting examples, the patterning coating 210 may comprise adiscontinuous layer 130 in at least a part of the patterning coatingtransition region 401 _(t) and/or at least a part of the patterningcoating non-transition part 401 _(n).

In some non-limiting examples, at least a part of the patterning coating210 in the first portion 401 may be substantially devoid of a closedcoating 1040 of the deposited layer 1030. In some non-limiting examples,at least a part of the exposed layer surface 11 of the first portion 401may be substantially devoid of a closed coating 1040 of the depositedlayer 1030 or of the deposited material 1231.

In some non-limiting examples, along at least one lateral axis,including without limitation, the X-axis, the patterning coatingnon-transition part 401 _(n) may have a width of w₁, and the patterningcoating transition region 401 _(t) may have a width of w₂. In somenon-limiting examples, the patterning coating non-transition part 401_(n) may have a cross-sectional area that, in some non-limitingexamples, may be approximated by multiplying the average film thicknessd₂ by the width w₁. In some non-limiting examples, the patterningcoating transition region 401 _(t) may have a cross-sectional area that,in some non-limiting examples, may be approximated by multiplying anaverage film thickness across the patterning coating transition region401 _(t) by the width w₁.

In some non-limiting examples, w₁ may exceed w₂. In some non-limitingexamples, a quotient of w₁/w₂ may be at least one of at least about: 5,10, 20, 50, 100, 500, 1,000, 1,500, 5,000, 10,000, 50,000, or 100,000.

In some non-limiting examples, at least one of w₁ and w₂ may exceed theaverage film thickness d₁ of the underlying layer.

In some non-limiting examples, at least one of w₁ and w₂ may exceed d₂.In some non-limiting examples, both w₁ and w₂ may exceed d₂. In somenon-limiting examples, w₁ and w₂ both may exceed d₁, and d₁ may exceedd₂.

Deposited Layer Transition Region

As may be better seen in FIG. 13B, in some non-limiting examples, thepatterning coating 210 in the first portion 401 may be surrounded by thedeposited layer 1030 in the second portion 402 such that the secondportion 402 has a boundary that is defined by the further extent or edge1335 of the deposited layer 1030 in the lateral aspect along eachlateral axis. In some non-limiting examples, the deposited layer edge1335 in the lateral aspect may be defined by a perimeter of the secondportion 402 in such aspect.

In some non-limiting examples, the second portion 402 may comprise atleast one deposited layer transition region 402 _(t), in the lateralaspect, in which a thickness of the deposited layer 1030 may transitionfrom a maximum thickness to a reduced thickness. The extent of thesecond portion 402 that does not exhibit such a transition may beidentified as a deposited layer non-transition part 402 _(n) of thesecond portion 402. In some non-limiting examples, the deposited layer1030 may form a substantially closed coating 1040 in the deposited layernon-transition part 402 _(n) of the second portion 402.

In some non-limiting examples, in plan, the deposited layer transitionregion 402 _(t) may extend, in the lateral aspect, between the depositedlayer non-transition part 402 _(n) of the second portion 402 and thedeposited layer edge 1335.

In some non-limiting examples, in plan, the deposited layer transitionregion 402 _(t) may surround, and/or extend along a perimeter of, thedeposited layer non-transition part 402 _(n) of the second portion 402.

In some non-limiting examples, along at least one lateral axis, thedeposited layer non-transition part 402 _(n) of the second portion 402may occupy the entirety of the second portion 402, such that there is nodeposited layer transition region 402 _(t) between it and the firstportion 401.

As illustrated in FIG. 13A, in some non-limiting examples, the depositedlayer 1030 may have an average film thickness d₃ in the deposited layernon-transition part 402 _(n) of the second portion 402 that may be in arange of at least one of between about: 1-500 nm, 5-200 nm, 5-40 nm,10-30 nm, or 10-100 nm. In some non-limiting examples, d₃ may exceed atleast one of about: 10 nm, 50 nm, or 100 nm. In some non-limitingexamples, the average film thickness d₃ of the deposited layer 1030 inthe deposited layer non-transition part 4021 of the second portion 402may be substantially the same, or constant, thereacross.

In some non-limiting examples, d₃ may exceed the average film thicknessd₁ of the underlying layer.

In some non-limiting examples, a quotient d₃/d₁ may be at least one ofat least about: 1.5, 2, 5, 10, 20, 50, or 100. In some non-limitingexamples, the quotient d₃/d₁ may be in a range of at least one ofbetween about: 0.1-10, or 0.2-40.

In some non-limiting examples, d₃ may exceed an average film thicknessd₂ of the patterning coating 210.

In some non-limiting examples, a quotient d₃/d₂ may be at least one ofat least about: 1.5, 2, 5, 10, 20, 50, or 100. In some non-limitingexamples, the quotient d₃/d₂ may be in a range of at least one ofbetween about: 0.2-10, or 0.5-40.

In some non-limiting examples, d₃ may exceed d₂ and d₂ may exceed d₁. Insome other non-limiting examples, d₃ may exceed d₁ and d₁ may exceed d₂.

In some non-limiting examples, a quotient d₂/d₁ may be between at leastone of about: 0.2-3, or 0.1-5.

In some non-limiting examples, along at least one lateral axis,including without limitation, the X-axis, the deposited layernon-transition part 402 _(n) of the second portion 402 may have a widthof w₃. In some non-limiting examples, the deposited layer non-transitionpart 402 _(n) of the second portion 402 may have a cross-sectional areaa₃ that, in some non-limiting examples, may be approximated bymultiplying the average film thickness d₃ by the width w₃.

In some non-limiting examples, w₃ may exceed the width w₁ of thepatterning coating non-transition part 401 _(n). In some non-limitingexamples, w₁ may exceed w₃.

In some non-limiting examples, a quotient w₁/w₃ may be in a range of atleast one of between about: 0.1-10, 0.2-5, 0.3-3, or 0.4-2. In somenon-limiting examples, a quotient w₃/w₁ may be at least one of at leastabout: 1, 2, 3, or 4.

In some non-limiting examples, w₃ may exceed the average film thicknessd₃ of the deposited layer 1030.

In some non-limiting examples, a quotient w₃/d₃ may be at least one ofat least about: 10, 50, 100, or 500. In some non-limiting examples, thequotient w₃/d₃ may be no more than about 100,000.

In some non-limiting examples, the deposited layer 1030 may have athickness that decreases from a maximum to a minimum within thedeposited layer transition region 402 _(t). In some non-limitingexamples, the maximum may be at, and/or proximate to, the boundarybetween the deposited layer transition region 4021 and the depositedlayer non-transition part 402 _(n) of the second portion 402. In somenon-limiting examples, the minimum may be at, and/or proximate to, thedeposited layer edge 1335. In some non-limiting examples, the maximummay be the average film thickness d₃ in the deposited layernon-transition part 402 _(n) of the second portion 402. In somenon-limiting examples, the minimum may be in a range of between about0-0.1 nm. In some non-limiting examples, the minimum may be the averagefilm thickness d₃ in the deposited layer non-transition part 402 _(n) ofthe second portion 402.

In some non-limiting examples, a profile of the thickness in thedeposited layer transition region 402 _(t) may be sloped, and/or followa gradient. In some non-limiting examples, such profile may be tapered.In some non-limiting examples, the taper may follow a linear,non-linear, parabolic, and/or exponential decaying profile.

In some non-limiting examples, as shown by way of non-limiting examplein the example version 1300 _(e) in FIG. 13E of the device 1000, thedeposited layer 1030 may completely cover the underlying surface in thedeposited layer transition region 402 _(t). In some non-limitingexamples, the deposited layer 1030 may comprise a substantially closedcoating 1040 in at least a part of the deposited layer transition region402 _(t). In some non-limiting examples, at least a part of theunderlying surface may be uncovered by the deposited layer 1030 in thedeposited layer transition region 402 _(t).

In some non-limiting examples, the deposited layer 1030 may comprise adiscontinuous layer 130 in at least a part of the deposited layertransition region 402 _(t).

Those having ordinary skill in the relevant art will appreciate that,while not explicitly illustrated, the patterning material 1111 may alsobe present to some extent at an interface between the deposited layer1030 and an underlying layer. Such material may be deposited as a resultof a shadowing effect, in which a deposited pattern is not identical toa pattern of a mask and may, in some non-limiting examples, result insome evaporated patterning material 1111 being deposited on a maskedpart of a target exposed layer surface 11. By way of non-limitingexample, such material may form as particle structures 121 (FIG. 13C)and/or as a thin film having a thickness that may be substantially nomore than an average thickness of the patterning coating 210.

Overlap

In some non-limiting examples, the deposited layer edge 1335 may bespaced apart, in the lateral aspect from the patterning coatingtransition region 401 _(t) of the first portion 401, such that there isno overlap between the first portion 401 and the second portion 402 inthe lateral aspect.

In some non-limiting examples, at least a part of the first portion 401and at least a part of the second portion 402 may overlap in the lateralaspect. Such overlap may be identified by an overlap portion 1303, suchas may be shown by way of non-limiting example in FIG. 13A, in which atleast a part of the second portion 402 overlaps at least a part of thefirst portion 401.

In some non-limiting examples, as shown by way of non-limiting examplein FIG. 13F, at least a part of the deposited layer transition region402 _(t) may be disposed over at least a part of the patterning coatingtransition region 401 _(t). In some non-limiting examples, at least apart of the patterning coating transition region 401 _(t) may besubstantially devoid of the deposited layer 1030, and/or the depositedmaterial 1231. In some non-limiting examples, the deposited material1231 may form a discontinuous layer 130 on an exposed layer surface 11of at least a part of the patterning coating transition region 401 _(t).

In some non-limiting examples, as shown by way of non-limiting examplein FIG. 13G, at least a part of the deposited layer transition region402 _(t) may be disposed over at least a part of the patterning coatingnon-transition part 401 _(n) of the first portion 401.

Although not shown, those having ordinary skill in the relevant art willappreciate that, in some non-limiting examples, the overlap portion 1303may reflect a scenario in which at least a part of the first portion 401overlaps at least a part of the second portion 402.

Thus, in some non-limiting examples, at least a part of the patterningcoating transition region 401 _(t) may be disposed over at least a partof the deposited layer transition region 402 _(t). In some non-limitingexamples, at least a part of the deposited layer transition region 402_(t) may be substantially devoid of the patterning coating 210, and/orthe patterning material 1111. In some non-limiting examples, thepatterning material 1111 may form a discontinuous layer 130 on anexposed layer surface of at least a part of the deposited layertransition region 402 _(t).

In some non-limiting examples, at least a part of the patterning coatingtransition region 401 _(t) may be disposed over at least a part of thedeposited layer non-transition part 402 _(n) of the second portion 402.

In some non-limiting examples, the patterning coating edge 1315 may bespaced apart, in the lateral aspect, from the deposited layernon-transition part 402 _(n) of the second portion 402.

In some non-limiting examples, the deposited layer 1030 may be formed asa single monolithic coating across both the deposited layernon-transition part 402 _(n) and the deposited layer transition region402 _(t) of the second portion 402.

Edge Effects of Patterning Coatings and Deposited Layers

FIGS. 14A-14I describe various potential behaviours of patterningcoatings 210 at a deposition interface with deposited layers 1030.

Turning to FIG. 14A, there may be shown a first example of a part of anexample version 1400 of the device 1000 at a patterning coatingdeposition boundary. The device 1400 may comprise a substrate 10 havingan exposed layer surface 11. A patterning coating 210 may be depositedover a first portion 401 of the exposed layer surface 11. A depositedlayer 1030 may be deposited over a second portion 402 of the exposedlayer surface 11. As shown, by way of non-limiting example, the firstportion 401 and the second portion 402 may be distinct andnon-overlapping parts of the exposed layer surface 11.

The deposited layer 1030 may comprise a first part 1301 and a secondpart 1030 ₂. As shown, by way of non-limiting example, the first part1030 ₁ of the deposited layer 1030 may substantially cover the secondportion 402 and the second part 1030 ₂ of the deposited layer 1030 maypartially project over, and/or overlap a first part of the patterningcoating 210.

In some non-limiting examples, since the patterning coating 210 may beformed such that its exposed layer surface 11 exhibits a relatively lowinitial sticking probability against deposition of the depositedmaterial 1231, there may be a gap 1429 formed between the projecting,and/or overlapping second part 1030 ₂ of the deposited layer 1030 andthe exposed layer surface 11 of the patterning coating 210. As a result,the second part 1030 ₂ may not be in physical contact with thepatterning coating 210 but may be spaced-apart therefrom by the gap 1429in a cross-sectional aspect. In some non-limiting examples, the firstpart 1030 ₁ of the deposited layer 1030 may be in physical contact withthe patterning coating 210 at an interface, and/or boundary between thefirst portion 401 and the second portion 402.

In some non-limiting examples, the projecting, and/or overlapping secondpart 1030 ₂ of the deposited layer 1030 may extend laterally over thepatterning coating 210 by a comparable extent as an average layerthickness d_(a) of the first part 1030 ₁ of the deposited layer 1030. Byway of non-limiting example, as shown, a width w_(b) of the second part1030 ₂ may be comparable to the average layer thickness d_(a) of thefirst part 1030 ₁. In some non-limiting examples, a ratio of a widthw_(b) of the second part 1030 ₂ by an average layer thickness d_(a) ofthe first part 1030 ₁ may be in a range of at least one of betweenabout: 1:1-1:3, 1:1-1:1.5, or 1:1-1:2. While the average layer thicknessd_(a) may in some non-limiting examples be relatively uniform across thefirst part 1030 ₁, in some non-limiting examples, the extent to whichthe second part 1030 ₂ may project, and/or overlap with the patterningcoating 210 (namely w_(b)) may vary to some extent across differentparts of the exposed layer surface 11.

Turning now to FIG. 14B, the deposited layer 1030 may be shown toinclude a third part 1030 ₃ disposed between the second part 1030 ₂ andthe patterning coating 210. As shown, the second part 1030 ₂ of thedeposited layer 1030 may extend laterally over and is longitudinallyspaced apart from the third part 1030 ₃ of the deposited layer 1030 andthe third part 1030 ₃ may be in physical contact with the exposed layersurface 11 of the patterning coating 210. An average layer thickness ofthe third part 1030 ₃ of the deposited layer 1030 may be no more than,and in some non-limiting examples, substantially less than, the averagelayer thickness d_(a) of the first part 1030 ₁ thereof. In somenon-limiting examples, a width w_(c) of the third part 1030 ₃ may exceedthe width w_(b) of the second part 1030 ₂. In some non-limitingexamples, the third part 1030 ₃ may extend laterally to overlap thepatterning coating 210 to a greater extent than the second part 1030 ₂.In some non-limiting examples, a ratio of a width w_(c) of the thirdpart 1030 ₃ by an average layer thickness d_(a) of the first part 1030 ₁may be in a range of at least one of between about: 1:2-3:1, or1:1.2-2.5:1. While the average layer thickness d_(a) may in somenon-limiting examples be relatively uniform across the first part 1030₁, in some non-limiting examples, the extent to which the third part1030 ₃ may project, and/or overlap with the patterning coating 210(namely w_(c)) may vary to some extent across different parts of theexposed layer surface 11.

In some non-limiting examples, the average layer thickness of the thirdpart 1030 ₃ may not exceed about 5% of the average layer thickness d_(a)of the first part 1030 ₁. By way of non-limiting example, d_(c) may beno more than at least one of about: 4%, 3%, 2%, 1% or 0.5% of d_(a).Instead of, and/or in addition to, the third part 1030 ₃ being formed asa thin film, as shown, the deposited material 1231 of the depositedlayer 1030 may form as particle structures 121 on a part of thepatterning coating 210. By way of non-limiting example, such particlestructures 121 may comprise features that are physically separated fromone another, such that they do not form a continuous layer.

Turning now to FIG. 14C, an NPC 1420 may be disposed between thesubstrate 10 and the deposited layer 1030. The NPC 1420 may be disposedbetween the first part 1030 ₁ of the deposited layer 1030 and the secondportion 402 of the substrate 10. The NPC 1420 is illustrated as beingdisposed on the second portion 402 and not on the first portion 401,where the patterning coating 210 has been deposited. The NPC 1420 may beformed such that, at an interface, and/or boundary between the NPC 1420and the deposited layer 1030, a surface of the NPC 1420 may exhibit arelatively high initial sticking probability against deposition of thedeposited material 1231. As such, the presence of the NPC 1420 maypromote the formation, and/or growth of the deposited layer 1030 duringdeposition.

Turning now to FIG. 14D, the NPC 1420 may be disposed on both the firstportion 401 and the second portion 402 of the substrate 10 and thepatterning coating 210 may cover a part of the NPC 1420 disposed on thefirst portion 401. Another part of the NPC 1420 may be substantiallydevoid of the patterning coating 210 and the deposited layer 1030 maycover such part of the NPC 1420.

Turning now to FIG. 14E, the deposited layer 1030 may be shown topartially overlap a part of the patterning coating 210 in a thirdportion 1403 of the substrate 10. In some non-limiting examples, inaddition to the first part 1030 ₁ and the second part 1030 ₂, thedeposited layer 1030 may further include a fourth part 1030 ₄. As shown,the fourth part 1030 ₄ of the deposited layer 1030 may be disposedbetween the first part 1030 ₁ and the second part 1030 ₂ of thedeposited layer 1030 and the fourth part 1030 ₄ may be in physicalcontact with the exposed layer surface 11 of the patterning coating 210.In some non-limiting examples, the overlap in the third portion 1403 maybe formed as a result of lateral growth of the deposited layer 1030during an open mask and/or mask-free deposition process. In somenon-limiting examples, while the exposed layer surface 11 of thepatterning coating 210 may exhibit a relatively low initial stickingprobability against deposition of the deposited material 1231, and thusa probability of the material nucleating on the exposed layer surface 11may be low, as the deposited layer 1030 grows in thickness, thedeposited layer 1030 may also grow laterally and may cover a subset ofthe patterning coating 210 as shown.

Turning now to FIG. 14F the first portion 401 of the substrate 10 may becoated with the patterning coating 210 and the second portion 402adjacent thereto may be coated with the deposited layer 1030. In somenon-limiting examples, it has been observed that conducting an open maskand/or mask-free deposition of the deposited layer 1030 may result inthe deposited layer 1030 exhibiting a tapered cross-sectional profileat, and/or near an interface between the deposited layer 1030 and thepatterning coating 210.

In some non-limiting examples, an average layer thickness of thedeposited layer 1030 at, and/or near the interface may be less than anaverage layer thickness d₃ of the deposited layer 1030. While suchtapered profile may be shown as being curved, and/or arched, in somenon-limiting examples, the profile may, in some non-limiting examples besubstantially linear, and/or non-linear. By way of non-limiting example,an average layer thickness d₃ of the deposited layer 1030 may decrease,without limitation, in a substantially linear, exponential, and/orquadratic fashion in a region proximal to the interface.

It has been observed that a contact angle θ_(c) of the deposited layer1030 at, and/or near the interface between the deposited layer 1030 andthe patterning coating 210 may vary, depending on properties of thepatterning coating 210, such as a relative initial sticking probability.It may be further postulated that the contact angle θ_(c) of the nucleimay, in some non-limiting examples, dictate the thin film contact angleof the deposited layer 1030 formed by deposition. Referring to FIG. 14Fby way of non-limiting example, the contact angle θ_(c) may bedetermined by measuring a slope of a tangent of the deposited layer 1030at and/or near the interface between the deposited layer 1030 and thepatterning coating 210. In some non-limiting examples, where thecross-sectional taper profile of the deposited layer 1030 may besubstantially linear, the contact angle θ_(c) may be determined bymeasuring the slope of the deposited layer 1030 at, and/or near theinterface. As will be appreciated by those having ordinary skill in therelevant art, the contact angle θ_(c) may be generally measured relativeto an angle of the underlying layer. In the present disclosure, forpurposes of simplicity of illustration, the patterning coating 210 andthe deposited layer 1030 may be shown deposited on a planar surface.However, those having ordinary skill in the relevant art will appreciatethat the patterning coating 210 and the deposited layer 1030 may bedeposited on non-planar surfaces.

In some non-limiting examples, the contact angle θ_(c) of the depositedlayer 1030 may exceed about 90°. Referring now to FIG. 14G, by way ofnon-limiting example, the deposited layer 1030 may be shown as includinga part extending past the interface between the patterning coating 210and the deposited layer 1030 and may be spaced apart from the patterningcoating 210 by a gap 1429. In such non-limiting scenario, the contactangle θ_(c) may, in some non-limiting examples, exceed 90°.

In some non-limiting examples, it may be advantageous to form adeposited layer 1030 exhibiting a relatively high contact angle θ_(c).By way of non-limiting example, the contact angle θ_(c) may exceed atleast one of about: 10°, 15°, 20°, 25°, 30°, 35°, 40°, 50°, 70°, 75°, or80°. By way of non-limiting example, a deposited layer 1030 having arelatively high contact angle θ_(c) may allow for creation of finelypatterned features while maintaining a relatively high aspect ratio. Byway of non-limiting example, there may be an aim to form a depositedlayer 1030 exhibiting a contact angle θ_(c) greater than about 90°. Byway of non-limiting example, the contact angle θ_(c) may exceed at leastone of about: 90°, 95°, 100°, 105°, 110° 120°, 130°, 135°, 140°, 145°,150°, or 170°.

Turning now to FIGS. 14H-14I, the deposited layer 1030 may partiallyoverlap a part of the patterning coating 210 in the third portion 1403of the substrate 10, which may be disposed between the first portion 401and the second portion 402 thereof. As shown, the subset of thedeposited layer 1030 partially overlapping a subset of the patterningcoating 210 may be in physical contact with the exposed layer surface 11thereof. In some non-limiting examples, the overlap in the third portion1403 may be formed because of lateral growth of the deposited layer 1030during an open mask and/or mask-free deposition process. In somenon-limiting examples, while the exposed layer surface 11 of thepatterning coating 210 may exhibit a relatively low initial stickingprobability against deposition of the deposited material 1231 and thusthe probability of the material nucleating on the exposed layer surface11 is low, as the deposited layer 1030 grows in thickness, the depositedlayer 1030 may also grow laterally and may cover a subset of thepatterning coating 210.

In the case of FIGS. 14H-14I, the contact angle θ_(c) of the depositedlayer 1030 may be measured at an edge thereof near the interface betweenit and the patterning coating 210, as shown. In FIG. 141 , the contactangle θ_(c) may exceed about 90°, which may in some non-limitingexamples result in a subset of the deposited layer 1030 being spacedapart from the patterning coating 210 by the gap 1429.

Particle

In some non-limiting examples, such as may be shown in FIG. 13C, theremay be at least one particle, including without limitation, ananoparticle (NP), an island, a plate, a disconnected cluster, and/or anetwork (collectively particle structure 121) disposed on an exposedlayer surface 11 of an underlying layer. In some non-limiting examples,the underlying layer may be the patterning coating 210 in the firstportion 401. In some non-limiting examples, the at least one particlestructure 121 may be disposed on an exposed layer surface 11 of thepatterning coating 210. In some non-limiting examples, there may be aplurality of such particle structures 121.

In some non-limiting examples, the at least one particle structure 121may comprise a particle material. In some non-limiting examples, theparticle material may be the same as the deposited material 1231 in thedeposited layer 1030.

In some non-limiting examples, the particle material in thediscontinuous layer 130 in the first portion 401, the deposited material1231 in the deposited layer 1030, and/or a material of which theunderlying layer thereunder may be comprised, may comprise a commonmetal.

In some non-limiting examples, the particle material may comprise anelement selected from at least one of: K, Na, Li, Ba, Cs, Yb, Ag, Au,Cu, Al, Mg, Zn, Cd, Sn, or Y. In some non-limiting examples, the elementmay comprise at least one of: K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, orMg. In some non-limiting examples, the element may comprise at least oneof: Cu, Ag, or Au. In some non-limiting examples, the element may be Cu.In some non-limiting examples, the element may be Al. In somenon-limiting examples, the element may comprise at least one of: Mg, Zn,Cd, or Yb. In some non-limiting examples, the element may comprise atleast one of: Mg, Ag, Al, Yb, or Li. In some non-limiting examples, theelement may comprise at least one of: Mg, Ag, or Yb. In somenon-limiting examples, the element may comprise at least one of: Mg, orAg. In some non-limiting examples, the element may be Ag.

In some non-limiting examples, the particle material may comprise a puremetal. In some non-limiting examples, the at least one particlestructure 121 may be a pure metal. In some non-limiting examples, the atleast one particle structure 121 may be at least one of: pure Ag orsubstantially pure Ag. In some non-limiting examples, the substantiallypure Ag may have a purity of at least one of at least about: 95%, 99%,99.9%, 99.99%, 99.999%, or 99.9995%. In some non-limiting examples, theat least one particle structure 121 may be at least one of: pure Mg orsubstantially pure Mg. In some non-limiting examples, the substantiallypure Mg may have a purity of at least one of at least about: 95%, 99%,99.9%, 99.99%, 99.999%, or 99.9995%.

In some non-limiting examples, the at least one particle structure 121may comprise an alloy. In some non-limiting examples, the alloy may beat least one of: an Ag-containing alloy, an Mg-containing alloy, or anAgMg-containing alloy. In some non-limiting examples, theAgMg-containing alloy may have an alloy composition that may range fromabout 1:10 (Ag:Mg) to about 10:1 by volume.

In some non-limiting examples, the particle material may comprise othermetals in place of, or in combination with Ag. In some non-limitingexamples, the particle material may comprise an alloy of Ag with atleast one other metal. In some non-limiting examples, the particlematerial may comprise an alloy of Ag with at least one of: Mg, or Yb. Insome non-limiting examples, such alloy may be a binary alloy having acomposition of between about: 5-95 vol. % Ag, with the remainder beingthe other metal. In some non-limiting examples, the particle materialmay comprise Ag and Mg. In some non-limiting examples, the particlematerial may comprise an Ag:Mg alloy having a composition of betweenabout 1:10-10:1 by volume. In some non-limiting examples, the particlematerial may comprise Ag and Yb. In some non-limiting examples, theparticle material may comprise a Yb:Ag alloy having a composition ofbetween about 1:20-10:1 by volume. In some non-limiting examples, theparticle material may comprise Mg and Yb. In some non-limiting examples,the particle material may comprise an Mg:Yb alloy. In some non-limitingexamples, the particle material may comprise an Ag:Mg:Yb alloy.

In some non-limiting examples, the at least one particle structure 121may comprise at least one additional element. In some non-limitingexamples, such additional element may be a non-metallic element. In somenon-limiting examples, the non-metallic material may be at least one of:O, S, N, or C. It will be appreciated by those having ordinary skill inthe relevant art that, in some non-limiting examples, such additionalelement(s) may be incorporated into the at least one particle structure121 as a contaminant, due to the presence of such additional element(s)in the source material, equipment used for deposition, and/or the vacuumchamber environment. In some non-limiting examples, such additionalelement(s) may form a compound together with other element(s) of the atleast one particle structure 121. In some non-limiting examples, aconcentration of the non-metallic element in the deposited material 1231may be no more than at least one of about: 1%, 0.1%, 0.01%, 0.001%,0.0001%, 0.00001%, 0.000001%, or 0.0000001%. In some non-limitingexamples, the at least one particle structure 121 may have a compositionin which a combined amount of 0 and C therein is no more than at leastone of about: 10%, 5%, 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%,0.000001%, or 0.0000001%.

In some non-limiting examples, the presence of the at least one particlestructure 121, including without limitation, NPs, including withoutlimitation, in a discontinuous layer 130, on an exposed layer surface 11of the patterning coating 210 may affect some optical properties of thedevice 1300.

In some non-limiting examples, such plurality of particle structures 121may form a discontinuous layer 130.

Without wishing to be limited to any particular theory, it may bepostulated that, while the formation of a closed coating 1040 of thedeposited material 1231 may be substantially inhibited by and/or on thepatterning coating 210, in some non-limiting examples, when thepatterning coating 210 is exposed to deposition of the depositedmaterial 1231 thereon, some vapor monomers 1232 of the depositedmaterial 1231 may ultimately form at least one particle structure 121 ofthe deposited material 1231 thereon.

In some non-limiting examples, at least some of the particle structures121 may be disconnected from one another. In other words, in somenon-limiting examples, the discontinuous layer 130 may comprisefeatures, including particle structures 121, that may be physicallyseparated from one another, such that the particle structures 121 do notform a closed coating 1040. Accordingly, such discontinuous layer 130may, in some non-limiting examples, thus comprise a thin disperse layerof deposited material 1231 formed as particle structures 121, insertedat, and/or substantially across the lateral extent of, an interfacebetween the patterning coating 210 and at least one covering layer 710in the device 100.

In some non-limiting examples, at least one of the particle structures121 of deposited material 1231 may be in physical contact with anexposed layer surface 11 of the patterning coating 210. In somenon-limiting examples, substantially all of the particle structures 121of deposited material 1231 may be in physical contact with the exposedlayer surface 11 of the patterning coating 210.

Without wishing to be bound by any particular theory, it has been found,somewhat surprisingly, that the presence of such a thin, dispersediscontinuous layer 130 of deposited material 1231, including withoutlimitation, at least one particle structure 121, including withoutlimitation, metal particle structures 121, on an exposed layer surface11 of the patterning coating 210, may exhibit at least one variedcharacteristic and concomitantly, varied behaviour, including withoutlimitation, optical effects and properties of the device 100, asdiscussed herein. In some non-limiting examples, such effects andproperties may be controlled to some extent by judicious selection of atleast one of: the characteristic size, size distribution, shape, surfacecoverage, configuration, deposited density, and/or dispersity of theparticle structures 121 on the patterning coating 210.

In some non-limiting examples, the formation of at least one of: thecharacteristic size, size distribution, shape, surface coverage,configuration, deposited density, and/or dispersity of suchdiscontinuous layer 130 may be controlled, in some non-limitingexamples, by judicious selection of at least one of: at least onecharacteristic of the patterning material 1111, an average filmthickness d₂ of the patterning coating 210, the introduction ofheterogeneities in the patterning coating 210, and/or a depositionenvironment, including without limitation, a temperature, pressure,duration, deposition rate, and/or deposition process for the patterningcoating 210.

In some non-limiting examples, the formation of at least one of thecharacteristic size, size distribution, shape, surface coverage,configuration, deposited density, and/or dispersity of suchdiscontinuous layer 130 may be controlled, in some non-limitingexamples, by judicious selection of at least one of: at least onecharacteristic of the particle material (which may be the depositedmaterial 1231), an extent to which the patterning coating 210 may beexposed to deposition of the particle material (which, in somenon-limiting examples may be specified in terms of a thickness of thecorresponding discontinuous layer 130), and/or a deposition environment,including without limitation, a temperature, pressure, duration,deposition rate, and/or method of deposition for the particle material.

In some non-limiting examples, the discontinuous layer 130 may bedeposited in a pattern across the lateral extent of the patterningcoating 210.

In some non-limiting examples, the discontinuous layer 130 may bedisposed in a pattern that may be defined by at least one region thereinthat is substantially devoid of the at least one particle structure 121.

In some non-limiting examples, the characteristics of such discontinuouslayer 130 may be assessed, in some non-limiting examples, somewhatarbitrarily, according to at least one of several criteria, includingwithout limitation, a characteristic size, size distribution, shape,configuration, surface coverage, deposited distribution, dispersity,and/or a presence, and/or extent of aggregation instances of theparticle material, formed on a part of the exposed layer surface 11 ofthe underlying layer.

In some non-limiting examples, an assessment of the discontinuous layer130 according to such at least one criterion, may be performed on,including without limitation, by measuring, and/or calculating, at leastone attribute of the discontinuous layer 130, using a variety of imagingtechniques, including without limitation, at least one of: transmissionelectron microscopy (TEM), atomic force microscopy (AFM), and/orscanning electron microscopy (SEM).

Those having ordinary skill in the relevant art will appreciate thatsuch an assessment of the discontinuous layer 130 may depend, to agreater, and/or lesser extent, by the extent, of the exposed layersurface 11 under consideration, which in some non-limiting examples maycomprise an area, and/or region thereof. In some non-limiting examples,the discontinuous layer 130 may be assessed across the entire extent, ina first lateral aspect, and/or a second lateral aspect that issubstantially transverse thereto, of the exposed layer surface 11. Insome non-limiting examples, the discontinuous layer 130 may be assessedacross an extent that comprises at least one observation window appliedagainst (a part of) the discontinuous layer 130.

In some non-limiting examples, the at least one observation window maybe located at at least one of: a perimeter, interior location, and/orgrid coordinate of the lateral aspect of the exposed layer surface 11.In some non-limiting examples, a plurality of the at least oneobservation windows may be used in assessing the discontinuous layer130.

In some non-limiting examples, the observation window may correspond toa field of view of an imaging technique applied to assess thediscontinuous layer 130, including without limitation, at least one of:TEM, AFM, and/or SEM. In some non-limiting examples, the observationwindow may correspond to a given level of magnification, includingwithout limitation, at least one of: 2.00 μm, 1.00 μm, 500 nm, or 200nm.

In some non-limiting examples, the assessment of the discontinuous layer130, including without limitation, at least one observation window used,of the exposed layer surface 11 thereof, may involve calculating, and/ormeasuring, by any number of mechanisms, including without limitation,manual counting, and/or known estimation techniques, which may, in somenon-limiting examples, may comprise curve, polygon, and/or shape fittingtechniques.

In some non-limiting examples, the assessment of the discontinuous layer130, including without limitation, at least one observation window used,of the exposed layer surface 11 thereof, may involve calculating, and/ormeasuring an average, median, mode, maximum, minimum, and/or otherprobabilistic, statistical, and/or data manipulation of a value of thecalculation, and/or measurement.

In some non-limiting examples, one of the at least one criterion bywhich such discontinuous layer 130 may be assessed, may be a surfacecoverage of the deposited material 1231 on such (part of the)discontinuous layer 130. In some non-limiting examples, the surfacecoverage may be represented by a (non-zero) percentage coverage by suchdeposited material 1231 of such (part of the) discontinuous layer 130.In some non-limiting examples, the percentage coverage may be comparedto a maximum threshold percentage coverage.

In some non-limiting examples, a (part of a) discontinuous layer 130having a surface coverage that may be substantially no more than themaximum threshold percentage coverage, may result in a manifestation ofdifferent optical characteristics that may be imparted by such part ofthe discontinuous layer 130, to EM radiation passing therethrough,whether transmitted entirely through the device 100, and/or emittedthereby, relative to EM radiation passing through a part of thediscontinuous layer 130 having a surface coverage that substantiallyexceeds the maximum threshold percentage coverage.

In some non-limiting examples, one measure of a surface coverage of anamount of an electrically conductive material on a surface may be a (EMradiation) transmittance, since in some non-limiting examples,electrically conductive materials, including without limitation, metals,including without limitation: Ag, Mg, or Yb, attenuate, and/or absorb EMradiation.

Those having ordinary skill in the relevant art will appreciate that insome non-limiting examples, surface coverage may be understood toencompass one or both of particle size, and deposited density. Thus, insome non-limiting examples, a plurality of these three criteria may bepositively correlated. Indeed, in some non-limiting examples, acriterion of low surface coverage may comprise some combination of acriterion of low deposited density with a criterion of low particlesize.

In some non-limiting examples, one of the at least one criterion bywhich such discontinuous layer 130 may be assessed, may be acharacteristic size of the constituent particle structures 121.

In some non-limiting examples, the at least one particle structure 121of the discontinuous layer 130, may have a characteristic size that isno more than a maximum threshold size. Non-limiting examples of thecharacteristic size may include at least one of: height, width, length,and/or diameter.

In some non-limiting examples, substantially all of the particlestructures 121, of the discontinuous layer 130 may have a characteristicsize that lies within a specified range.

In some non-limiting examples, such characteristic size may becharacterized by a characteristic length, which in some non-limitingexamples, may be considered a maximum value of the characteristic size.In some non-limiting examples, such maximum value may extend along amajor axis of the particle structure 121. In some non-limiting examples,the major axis may be understood to be a first dimension extending in aplane defined by the plurality of lateral axes. In some non-limitingexamples, a characteristic width may be identified as a value of thecharacteristic size of the particle structure 121 that may extend alonga minor axis of the particle structure 121. In some non-limitingexamples, the minor axis may be understood to be a second dimensionextending in the same plane but substantially transverse to the majoraxis.

In some non-limiting examples, the characteristic length of the at leastone particle structure 121, along the first dimension, may be no morethan the maximum threshold size.

In some non-limiting examples, the characteristic width of the at leastone particle structure 121, along the second dimension, may be no morethan the maximum threshold size.

In some non-limiting examples, a size of the constituent particlestructures 121, in the (part of the) discontinuous layer 130, may beassessed by calculating, and/or measuring a characteristic size of suchat least one particle structure 121, including without limitation, amass, volume, length of a diameter, perimeter, major, and/or minor axisthereof.

In some non-limiting examples, one of the at least one criterion bywhich such discontinuous layer 130 may be assessed, may be a depositeddensity thereof.

In some non-limiting examples, the characteristic size of the particlestructure 121 may be compared to a maximum threshold size.

In some non-limiting examples, the deposited density of the particlestructures 121 may be compared to a maximum threshold deposited density.

In some non-limiting examples, at least one of such criteria may bequantified by a numerical metric. In some non-limiting examples, such ametric may be a calculation of a dispersity D that describes thedistribution of particle (area) sizes in a deposited layer 1030 ofparticle structures 121, in which:

$\begin{matrix}{D = \frac{\overset{\_}{S_{s}}}{\overset{\_}{S_{n}}}} & (1)\end{matrix}$ where: $\begin{matrix}{{\overset{\_}{S_{s}} = \frac{\sum_{i = 1}^{n}S_{i}^{2}}{\sum_{i = 1}^{n}S_{i}}},{\overset{\_}{S_{n}} = \frac{\sum_{i = 1}^{n}S_{i}}{n}},} & (2)\end{matrix}$

n is the number of particle structures 121 in a sample area,

S_(i) is the (area) size of the i^(th) particle structure 121,

S _(n) is the number average of the particle (area) sizes and

S _(s) is the (area) size average of the particle (area) sizes.

Those having ordinary skill in the relevant art will appreciate that thedispersity is roughly analogous to a polydispersity index (PDI) and thatthese averages are roughly analogous to the concepts of number averagemolecular weight and weight average molecular weight familiar in organicchemistry, but applied to an (area) size, as opposed to a molecularweight of a sample particle structure 121.

Those having ordinary skill in the relevant will also appreciate thatwhile the concept of dispersity may, in some non-limiting examples, beconsidered a three-dimensional volumetric concept, in some non-limitingexamples, the dispersity may be considered to be a two-dimensionalconcept. As such, the concept of dispersity may be used in connectionwith viewing and analyzing two-dimensional images of the deposited layer1030, such as may be obtained by using a variety of imaging techniques,including without limitation, at least one of: TEM, AFM and/or SEM. Itis in such a two-dimensional context, that the equations set out aboveare defined.

In some non-limiting examples, the dispersity and/or the number averageof the particle (area) size and the (area) size average of the particle(area) size may involve a calculation of at least one of: the numberaverage of the particle diameters and the (area) size average of theparticle diameters:

$\begin{matrix}{{\overset{¯}{d_{n}} = {2\sqrt{\frac{\overset{\_}{S_{n}}}{\pi}}}},{\overset{¯}{d_{s}} = {2\sqrt{\frac{\overset{\_}{S_{s}}}{\pi}}}}} & (3)\end{matrix}$

In some non-limiting examples, the deposited material, including withoutlimitation as particle structures 121, of the at least one depositedlayer 1030, may be deposited by a mask-free and/or open mask depositionprocess.

In some non-limiting examples, the particle structures 121 may have asubstantially round shape. In some non-limiting examples, the particlestructures 121 may have a substantially spherical shape.

For purposes of simplification, in some non-limiting examples, it may beassumed that a longitudinal extent of each particle structure 121 may besubstantially the same (and, in any event, may not be directly measuredfrom a SEM image in plan) so that the (area) size of the particlestructure 121 may be represented as a two-dimensional area coveragealong the pair of lateral axes. In the present disclosure, a referenceto an (area) size may be understood to refer to such two-dimensionalconcept, and to be differentiated from a size (without the prefix“area”) that may be understood to refer to a one-dimensional concept,such as a linear dimension.

Indeed, in some early investigations, it appears that, in somenon-limiting examples, the longitudinal extent, along the longitudinalaxis, of such particle structures 121, may tend to be small relative tothe lateral extent (along at least one of the lateral axes), such thatthe volumetric contribution of the longitudinal extent thereof may bemuch less than that of such lateral extent. In some non-limitingexamples, this may be expressed by an aspect ratio (a ratio of alongitudinal extent to a lateral extent) that may be no more than 1. Insome non-limiting examples, such aspect ratio may be at least one ofabout: 1:10, 1:20, 1:50, 1:75, or 1:300.

In this regard, the assumption set out above (that the longitudinalextent is substantially the same and can be ignored) to represent theparticle structure 121 as a two-dimensional area coverage may beappropriate.

Those having ordinary skill in the relevant art will appreciate, havingregard to the non-determinative nature of the deposition process,especially in the presence of defects, and/or anomalies on the exposedlayer surface 11 of the underlying material, including withoutlimitation, heterogeneities, including without limitation, at least oneof: a step edge, a chemical impurity, a bonding site, a kink, and/or acontaminant thereon, and consequently the formation of particlestructures 121 thereon, the non-uniform nature of coalescence thereof asthe deposition process continues, and in view of the uncertainty in thesize, and/or position of observation windows, as well as the intricaciesand variability inherent in the calculation, and/or measurement of theircharacteristic size, spacing, deposited density, degree of aggregation,and the like, there may be considerable variability in terms of thefeatures, and/or topology within observation windows.

In the present disclosure, for purposes of simplicity of illustration,certain details of deposited materials 1231, including withoutlimitation, thickness profiles, and/or edge profiles of layer(s) havebeen omitted.

Those having ordinary skill in the relevant art will appreciate thatcertain metal NPs, whether or not as part of a discontinuous layer 130of deposited material 1231, including without limitation, at least oneparticle structure 121, may exhibit surface plasmon (SP) excitations,and/or coherent oscillations of free electrons, with the result thatsuch NPs may absorb, and/or scatter light in a range of the EM spectrum,including without limitation, the visible spectrum, and/or a sub-rangethereof. The optical response, including without limitation, the(sub-)range of the EM spectrum over which absorption may be concentrated(absorption spectrum), refractive index, and/or extinction coefficient,of such localized SP (LSP) excitations, and/or coherent oscillations,may be tailored by varying properties of such NPs, including withoutlimitation, at least one of: a characteristic size, size distribution,shape, surface coverage, configuration, deposition density, dispersity,and/or property, including without limitation, material, and/or degreeof aggregation, of the nanostructures, and/or a medium proximatethereto.

Such optical response, in respect of photon-absorbing coatings, mayinclude absorption of photons incident thereon, thereby reducingreflection. In some non-limiting examples, the absorption may beconcentrated in a range of the EM spectrum, including withoutlimitation, the visible spectrum, and/or a sub-range thereof. In somenon-limiting examples, employing a photon-absorbing layer as part of anopto-electronic device may reduce reliance on a polarizer therein.

It has been reported in Fusella et al., “Plasmonic enhancement ofstability and brightness in organic light-emitting devices”, Nature2020, 585, at 379-382 (“Fusella et al.”), that the stability of an OLEDdevice may be enhanced by incorporating an NP-based outcoupling layerabove the cathode layer to extract energy from the plasmon modes. TheNP-based outcoupling layer was fabricated by spin-casting cubic Ag NPson top of an organic layer on top of a cathode. However, since mostcommercial OLED devices are fabricated using vacuum-based processing,spin-casting from solution may not constitute an appropriate mechanismfor forming such an NP-based outcoupling layer above the cathode.

It has been discovered that such an NP-based outcoupling layer above thecathode may be fabricated in vacuum (and thus, may be suitable for usein a commercial OLED fabrication process), by depositing a metaldeposited material 1231 in a discontinuous layer 130 onto a patterningcoating 210, which in some non-limiting examples, may be, and/or bedeposited on, the cathode. Such process may avoid the use of solvents orother wet chemicals that may cause damage to the OLED device, and/or mayadversely impact device reliability.

In some non-limiting examples, the presence of such a discontinuouslayer 130 of deposited material 1231, including without limitation, atleast one particle structure 121, may contribute to enhanced extractionof EM radiation, performance, stability, reliability, and/or lifetime ofthe device.

In some non-limiting examples, the existence, in a layered device 100,of at least one discontinuous layer 130, on, and/or proximate to theexposed layer surface 11 of a patterning coating 210, and/or, in somenon-limiting examples, and/or proximate to the interface of suchpatterning 110 with at least one covering layer 710, may impart opticaleffects to EM signals, including without limitation, photons, emitted bythe device, and/or transmitted therethrough.

Those having ordinary skill in the relevant art will appreciate that,while a simplified model of the optical effects is presented herein,other models, and/or explanations may be applicable.

In some non-limiting examples, the presence of such a discontinuouslayer 130 of the deposited material 1231, including without limitation,at least one particle structure 121, may reduce, and/or mitigatecrystallization of thin film layers, and/or coatings disposed adjacentin the longitudinal aspect, including without limitation, the patterningcoating 210, and/or at least one covering layer 710, thereby stabilizingthe property of the thin film(s) disposed adjacent thereto, and, in somenon-limiting examples, reducing scattering. In some non-limitingexamples, such thin film may be, and/or comprise at least one layer ofan outcoupling, and/or encapsulating coating 1950 of the device,including without limitation, a capping layer (CPL).

In some non-limiting examples, the presence of such a discontinuouslayer 130 of deposited material 1231, including without limitation, atleast one particle structure 121, may provide an enhanced absorption inat least a part of the UV spectrum. In some non-limiting examples,controlling the characteristics of such particle structures 121,including without limitation, at least one of: characteristic size, sizedistribution, shape, surface coverage, configuration, deposited density,dispersity, deposited material 1231, and refractive index, of theparticle structures 121, may facilitate controlling the degree ofabsorption, wavelength range and peak wavelength of the absorptionspectrum, including in the UV spectrum. Enhanced absorption of EMradiation in at least a part of the UV spectrum may be advantageous, forexample, for improving device performance, stability, reliability,and/or lifetime.

In some non-limiting examples, the optical effects may be described interms of its impact on the transmission, and/or absorption wavelengthspectrum, including a wavelength range, and/or peak intensity thereof.

Additionally, while the model presented may suggest certain effectsimparted on the transmission, and/or absorption of photons passingthrough such discontinuous layer 130, in some non-limiting examples,such effects may reflect local effects that may not be reflected on abroad, observable basis.

Opto-Electronic Device

FIG. 15 is a simplified block diagram from a cross-sectional aspect, ofan example electro-luminescent device 1500 according to the presentdisclosure. In some non-limiting examples, the device 1500 is an OLED.

The device 1500 may comprise a substrate 10, upon which a frontplane1510, comprising a plurality of layers, respectively, a first electrode1520, at least one semiconducting layer 1530, and a second electrode1540, are disposed. In some non-limiting examples, the frontplane 1510may provide mechanisms for photon emission, and/or manipulation ofemitted photons.

In some non-limiting examples, the deposited layer 1030 and theunderlying layer may together form at least a part of at least one ofthe first electrode 1520 and the second electrode 1540 of the device600. In some non-limiting examples, the deposited layer 1030 and theunderlying layer thereunder may together form at least a part of acathode of the device 1500.

In some non-limiting examples, the device 1500 may be electricallycoupled with a power source 1505. When so coupled, the device 1500 mayemit photons as described herein.

Substrate

In some examples, the substrate 10 may comprise a base substrate 1512.In some examples, the base substrate 1512 may be formed of materialsuitable for use thereof, including without limitation, an inorganicmaterial, including without limitation, Si, glass, metal (includingwithout limitation, a metal foil), sapphire, and/or other inorganicmaterial, and/or an organic material, including without limitation, apolymer, including without limitation, a polyimide, and/or an Si-basedpolymer. In some examples, the base substrate 1512 may be rigid orflexible. In some examples, the substrate 10 may be defined by at leastone planar surface. In some non-limiting examples, the substrate 10 mayhave at least one surface that supports the remaining frontplane 1510components of the device 1500, including without limitation, the firstelectrode 1520, the at least one semiconducting layer 1530, and/or thesecond electrode 1540.

In some non-limiting examples, such surface may be an organic surface,and/or an inorganic surface.

In some examples, the substrate 10 may comprise, in addition to the basesubstrate 1512, at least one additional organic, and/or inorganic layer(not shown nor specifically described herein) supported on an exposedlayer surface 11 of the base substrate 1512.

In some non-limiting examples, such additional layers may comprise,and/or form at least one organic layer, which may comprise, replace,and/or supplement at least one of the at least one semiconducting layers1530.

In some non-limiting examples, such additional layers may comprise atleast one inorganic layer, which may comprise, and/or form at least oneelectrode, which in some non-limiting examples, may comprise, replace,and/or supplement the first electrode 1520, and/or the second electrode1540.

In some non-limiting examples, such additional layers may comprise,and/or be formed of, and/or as a backplane 1515. In some non-limitingexamples, the backplane 1515 may contain power circuitry, and/orswitching elements for driving the device 1500, including withoutlimitation, electronic TFT structure(s) 1601, and/or component(s)thereof, that may be formed by a photolithography process, which may notbe provided under, and/or may precede the introduction of a low pressure(including without limitation, a vacuum) environment.

Backplane and TFT Structure(s) Embodied Therein

In some non-limiting examples, the backplane 1515 of the substrate 10may comprise at least one electronic, and/or opto-electronic component,including without limitation, transistors, resistors, and/or capacitors,such as which may support the device 600 acting as an active-matrix,and/or a passive matrix device. In some non-limiting examples, suchstructures may be a thin-film transistor (TFT) structure 1601.

Non-limiting examples of TFT structures 1601 include top-gate,bottom-gate, n-type and/or p-type TFT structures 1601. In somenon-limiting examples, the TFT structure 1601 may incorporate any atleast one of amorphous Si (a-Si), indium gallium zinc oxide (IGZO),and/or low-temperature polycrystalline Si (LTPS).

First Electrode

The first electrode 1520 may be deposited over the substrate 10. In somenon-limiting examples, the first electrode 1520 may be electricallycoupled with a terminal of the power source 1505, and/or to ground. Insome non-limiting examples, the first electrode 1520 may be so coupledthrough at least one driving circuit which in some non-limitingexamples, may incorporate at least one TFT structure 1601 in thebackplane 1515 of the substrate 10.

In some non-limiting examples, the first electrode 1520 may comprise ananode, and/or a cathode. In some non-limiting examples, the firstelectrode 1520 may be an anode.

In some non-limiting examples, the first electrode 1520 may be formed bydepositing at least one thin conductive film, over (a part of) thesubstrate 10. In some non-limiting examples, there may be a plurality offirst electrodes 1520, disposed in a spatial arrangement over a lateralaspect of the substrate 10. In some non-limiting examples, at least oneof such at least one first electrode 1520 may be deposited over (a partof) a TFT insulating layer 1609 disposed in a lateral aspect in aspatial arrangement. If so, in some non-limiting examples, at least oneof such at least one first electrode 1520 may extend through an openingof the corresponding TFT insulating layer 1609 to be electricallycoupled with an electrode of the TFT structures 1601 in the backplane1515.

In some non-limiting examples, the at least one first electrode 1520,and/or at least one thin film thereof, may comprise various materials,including without limitation, at least one metallic material, includingwithout limitation, Mg, Al, calcium (Ca), Zn, Ag, Cd, Ba, or Yb, orcombinations of any plurality thereof, including without limitation,alloys containing any of such materials, at least one metal oxide,including without limitation, a TCO, including without limitation,ternary compositions such as, without limitation, fluorine tin oxide(FTO), indium zinc oxide (IZO), or ITO, or combinations of any pluralitythereof, or in varying proportions, or combinations of any pluralitythereof in at least one layer, any at least one of which may be, withoutlimitation, a thin film.

Second Electrode

The second electrode 1540 may be deposited over the at least onesemiconducting layer 1530. In some non-limiting examples, the secondelectrode 1540 may be electrically coupled with a terminal of the powersource 1505, and/or with ground. In some non-limiting examples, thesecond electrode 1540 may be so coupled through at least one drivingcircuit, which in some non-limiting examples, may incorporate at leastone TFT structure 1601 in the backplane 1515 of the substrate 10.

In some non-limiting examples, the second electrode 1540 may comprise ananode, and/or a cathode. In some non-limiting examples, the secondelectrode 1540 may be a cathode.

In some non-limiting examples, the second electrode 1540 may be formedby depositing a deposited layer 1030, in some non-limiting examples, asat least one thin film, over (a part of) the at least one semiconductinglayer 1530. In some non-limiting examples, there may be a plurality ofsecond electrodes 1540, disposed in a spatial arrangement over a lateralaspect of the at least one semiconducting layer 1530.

In some non-limiting examples, the at least one second electrode 1540may comprise various materials, including without limitation, at leastone metallic materials, including without limitation, Mg, Al, Ca, Zn,Ag, Cd, Ba, or Yb, or combinations of any plurality thereof, includingwithout limitation, alloys containing any of such materials, at leastone metal oxides, including without limitation, a TCO, including withoutlimitation, ternary compositions such as, without limitation, FTO, IZO,or ITO, or combinations of any plurality thereof, or in varyingproportions, or zinc oxide (ZnO), or other oxides containing indium(In), or Zn, or combinations of any plurality thereof in at least onelayer, and/or at least one non-metallic materials, any at least one ofwhich may be, without limitation, a thin conductive film. In somenon-limiting examples, for a Mg:Ag alloy, such alloy composition mayrange between about 1:9-9:1 by volume.

In some non-limiting examples, the deposition of the second electrode1540 may be performed using an open mask and/or a mask-free depositionprocess.

In some non-limiting examples, the second electrode 1540 may comprise aplurality of such layers, and/or coatings. In some non-limitingexamples, such layers, and/or coatings may be distinct layers, and/orcoatings disposed on top of one another.

In some non-limiting examples, the second electrode 1540 may comprise aYb/Ag bi-layer coating. By way of non-limiting example, such bi-layercoating may be formed by depositing a Yb coating, followed by an Agcoating. In some non-limiting examples, a thickness of such Ag coatingmay exceed a thickness of the Yb coating.

In some non-limiting examples, the second electrode 1540 may be amulti-layer electrode 1540 comprising at least one metallic layer,and/or at least one oxide layer.

In some non-limiting examples, the second electrode 1540 may comprise afullerene and Mg.

By way of non-limiting example, such coating may be formed by depositinga fullerene coating followed by an Mg coating. In some non-limitingexamples, a fullerene may be dispersed within the Mg coating to form afullerene-containing Mg alloy coating. Non-limiting examples of suchcoatings are described in United States Patent Application PublicationNo. 2015/0287846 published 8 Oct. 2015, and/or in PCT InternationalApplication No. PCT/IB2017/054970 filed 15 Aug. 2017 and published asWO2018/033860 on 22 Feb. 2018.

Semiconducting Layer

In some non-limiting examples, the at least one semiconducting layer1530 may comprise a plurality of layers 1531, 1533, 1535, 1537, 1539,any of which may be disposed, in some non-limiting examples, in a thinfilm, in a stacked configuration, which may include, without limitation,at least one of a hole injection layer (HIL) 1531, a hole transportlayer (HTL) 1533, an emissive layer (EML) 1535, an electron transportlayer (ETL) 1537, and/or an electron injection layer (EIL) 1539.

In some non-limiting examples, the at least one semiconducting layer1530 may form a “tandem” structure comprising a plurality of EMLs 1535.In some non-limiting examples, such tandem structure may also compriseat least one charge generation layer (CGL).

Those having ordinary skill in the relevant art will readily appreciatethat the structure of the device 1500 may be varied by omitting, and/orcombining at least one of the semiconductor layers 1531, 1533, 1535,1537, 1539.

Further, any of the layers 1531, 1533, 1535, 1537, 1539 of the at leastone semiconducting layer 1530 may comprise any number of sub-layers.Still further, any of such layers 1531, 1533, 1535, 1537, 1539, and/orsub-layer(s) thereof may comprise various mixture(s), and/or compositiongradient(s). In addition, those having ordinary skill in the relevantart will appreciate that the device 1500 may comprise at least one layercomprising inorganic, and/or organometallic materials and may not benecessarily limited to devices comprised solely of organic materials. Byway of non-limiting example, the device 600 may comprise at least oneQD.

In some non-limiting examples, the HIL 1531 may be formed using a holeinjection material, which may facilitate injection of holes by theanode.

In some non-limiting examples, the HTL 1533 may be formed using a holetransport material, which may, in some non-limiting examples, exhibithigh hole mobility.

In some non-limiting examples, the ETL 1537 may be formed using anelectron transport material, which may, in some non-limiting examples,exhibit high electron mobility.

In some non-limiting examples, the EIL 1539 may be formed using anelectron injection material, which may facilitate injection of electronsby the cathode.

In some non-limiting examples, the EML 1535 may be formed, by way ofnon-limiting example, by doping a host material with at least oneemitter material. In some non-limiting examples, the emitter materialmay be a fluorescent emitter, a phosphorescent emitter, a thermallyactivated delayed fluorescence (TADF) emitter, and/or a plurality of anycombination of these.

In some non-limiting examples, the device 1500 may be an OLED in whichthe at least one semiconducting layer 1530 comprises at least an EML1535 interposed between conductive thin film electrodes 1520, 1540,whereby, when a potential difference is applied across them, holes maybe injected into the at least one semiconducting layer 1530 through theanode and electrons may be injected into the at least one semiconductinglayer 1530 through the cathode, migrate toward the EML 1535 and combineto emit EM radiation in the form of photons.

In some non-limiting examples, the device 1500 may be anelectro-luminescent QD device in which the at least one semiconductinglayer 1530 may comprise an active layer comprising at least one QD. Whencurrent may be provided by the power source 1505 to the first electrode1520 and second electrode 1540, photons may be emitted from the activelayer comprising the at least one semiconducting layer 1530 betweenthem.

Those having ordinary skill in the relevant art will readily appreciatethat the structure of the device 1500 may be varied by the introductionof at least one additional layer (not shown) at appropriate position(s)within the at least one semiconducting layer 1530 stack, includingwithout limitation, a hole blocking layer (HBL) (not shown), an electronblocking layer (EBL) (not shown), an additional charge transport layer(CTL) (not shown), and/or an additional charge injection layer (CIL)(not shown).

In some non-limiting examples, including where the OLED device 1500comprises a lighting panel, an entire lateral aspect of the device 1500may correspond to a single emissive element. As such, the substantiallyplanar cross-sectional profile shown in FIG. 15 may extend substantiallyalong the entire lateral aspect of the device 1500, such that EMradiation is emitted from the device 1500 substantially along theentirety of the lateral extent thereof. In some non-limiting examples,such single emissive element may be driven by a single driving circuitof the device 1500.

In some non-limiting examples, including where the OLED device 1500comprises a display module, the lateral aspect of the device 1500 may besub-divided into a plurality of emissive regions 610 of the device 1500,in which the cross-sectional aspect of the device structure 1500, withineach of the emissive region(s) 610 shown, without limitation, in FIG. xmay cause EM radiation to be emitted therefrom when energized.

Emissive Regions

In some non-limiting examples, such as may be shown by way ofnon-limiting example in FIG. 16 , an active region 1630 of an emissiveregion 610 may be defined to be bounded, in the transverse aspect, bythe first electrode 1520 and the second electrode 1540, and to beconfined, in the lateral aspect, to an emissive region 610 defined bythe first electrode 1520 and the second electrode 1540. Those havingordinary skill in the relevant art will appreciate that the lateralextent of the emissive region 610, and thus the lateral boundaries ofthe active region 1630, may not correspond to the entire lateral aspectof either, or both, of the first electrode 1520 and the second electrode1540. Rather, the lateral extent of the emissive region 610 may besubstantially no more than the lateral extent of either of the firstelectrode 1520 and the second electrode 1540. By way of non-limitingexample, parts of the first electrode 1520 may be covered by the PDL(s)1640 and/or parts of the second electrode 1540 may not be disposed onthe at least one semiconducting layer 1530, with the result, in either,or both, scenarios, that the emissive region 610 may be laterallyconstrained.

In some non-limiting examples, individual emissive regions 610 of thedevice 1000 may be laid out in a lateral pattern. In some non-limitingexamples, the pattern may extend along a first lateral direction. Insome non-limiting examples, the pattern may also extend along a secondlateral direction, which in some non-limiting examples, may besubstantially normal to the first lateral direction. In somenon-limiting examples, the pattern may have a number of elements in suchpattern, each element being characterized by at least one featurethereof, including without limitation, a wavelength of EM radiationemitted by the emissive region 610 thereof, a shape of such emissiveregion 610, a dimension (along either, or both of, the first, and/orsecond lateral direction(s)), an orientation (relative to either, and/orboth of the first, and/or second lateral direction(s)), and/or a spacing(relative to either, or both of, the first, and/or second lateraldirection(s)) from a previous element in the pattern. In somenon-limiting examples, the pattern may repeat in either, or both of, thefirst and/or second lateral direction(s).

In some non-limiting examples, each individual emissive region 610 ofthe device 1000 may be associated with, and driven by, a correspondingdriving circuit within the backplane 1515 of the device 1000, fordriving an OLED structure for the associated emissive region 610. Insome non-limiting examples, including without limitation, where theemissive regions 610 may be laid out in a regular pattern extending inboth the first (row) lateral direction and the second (column) lateraldirection, there may be a signal line in the backplane 1515,corresponding to each row of emissive regions 610 extending in the firstlateral direction and a signal line, corresponding to each column ofemissive regions 610 extending in the second lateral direction. In sucha non-limiting configuration, a signal on a row selection line mayenergize the respective gates of the switching TFT(s) 1601 electricallycoupled therewith and a signal on a data line may energize therespective sources of the switching TFT(s) 1601 electrically coupledtherewith, such that a signal on a row selection line/data line pair mayelectrically couple and energise, by the positive terminal of the powersource 1505, the anode of the OLED structure of the emissive region 610associated with such pair, causing the emission of a photon therefrom,the cathode thereof being electrically coupled with the negativeterminal of the power source 1505.

In some non-limiting examples, each emissive region 610 of the device600 may correspond to a single display pixel 2710 (FIG. 27A). In somenon-limiting examples, each pixel 2710 may emit light at a givenwavelength spectrum. In some non-limiting examples, the wavelengthspectrum may correspond to a colour in, without limitation, the visiblespectrum.

In some non-limiting examples, each emissive region 610 of the device1000 may correspond to a sub-pixel 224 x (FIG. 13A) of a display pixel2710. In some non-limiting examples, a plurality of sub-pixels 224 x maycombine to form, or to represent, a single display pixel 2710.

In some non-limiting examples, a single display pixel 2710 may berepresented by three sub-pixels 224 x. In some non-limiting examples,the three sub-pixels 224 x may be denoted as, respectively, R(ed)sub-pixels 2241, G(reen) sub-pixels 2242, and/or B(lue) sub-pixels 2243.In some non-limiting examples, a single display pixel 2710 may berepresented by four sub-pixels 224 x, in which three of such sub-pixels224 x may be denoted as R(ed), G(reen) and B(lue) sub-pixels 224 x andthe fourth sub-pixel 224 x may be denoted as a W(hite) sub-pixel 224 x.In some non-limiting examples, the emission spectrum of the EM radiationemitted by a given sub-pixel 224 x may correspond to the colour by whichthe sub-pixel 224 x is denoted. In some non-limiting examples, thewavelength of the EM radiation may not correspond to such colour, butfurther processing may be performed, in a manner apparent to thosehaving ordinary skill in the relevant art, to transform the wavelengthto one that does so correspond.

Since the wavelength of sub-pixels 224 x of different colours may bedifferent, the optical characteristics of such sub-pixels 224 x maydiffer, especially if a common electrode 1520, 1540 having asubstantially uniform thickness profile may be employed for sub-pixels224 x of different colours.

When a common electrode 1520, 1540 having a substantially uniformthickness may be provided as the second electrode 1540 in a device 1000,the optical performance of the device 1000 may not be readily befine-tuned according to an emission spectrum associated with each(sub-)pixel 2710/224 x. The second electrode 1540 used in such OLEDdevices 1000 may in some non-limiting examples, be a common electrode1520, 1540 coating a plurality of (sub-)pixels 2710/224 x. By way ofnon-limiting example, such common electrode 1520, 1540 may be arelatively thin conductive film having a substantially uniform thicknessacross the device 1000. While efforts have been made in somenon-limiting examples, to tune the optical microcavity effectsassociated with each (sub-)pixel 2710/224 x color by varying a thicknessof organic layers disposed within different (sub-)pixel(s) 2710/224 x,such approach may, in some non-limiting examples, provide a significantdegree of tuning of the optical microcavity effects in at least somecases. In addition, in some non-limiting examples, such approach may bedifficult to implement in an OLED display production environment.

As a result, the presence of optical interfaces created by numerousthin-film layers and coatings with different refractive indices, such asmay in some non-limiting examples be used to construct opto-electronicdevices including without limitation OLED devices 1000, may createdifferent optical microcavity effects for sub-pixels 224 x of differentcolours.

Some factors that may impact an observed microcavity effect in a device1000 include, without limitation, a total path length (which in somenon-limiting examples may correspond to a total thickness (in thelongitudinal aspect) of the device 1000 through which EM radiationemitted therefrom will travel before being outcoupled) and therefractive indices of various layers and coatings.

In some non-limiting examples, modulating a thickness of an electrode1520, 1540 in and across a lateral aspect of emissive region(s) 610 of a(sub-) pixel 2710/224 x may impact the microcavity effect observable. Insome non-limiting examples, such impact may be attributable to a changein the total optical path length.

In some non-limiting examples, a change in a thickness of the electrode1520, 1540 may also change the refractive index of EM radiation passingtherethrough, in some non-limiting examples, in addition to a change inthe total optical path length. In some non-limiting examples, this maybe particularly the case where the electrode 1520, 1540 may be formed ofat least one deposited layer 1030.

In some non-limiting examples, the optical properties of the device1000, and/or in some non-limiting examples, across the lateral aspect ofemissive region(s) 610 of a (sub-) pixel 2710/224 x that may be variedby modulating at least one optical microcavity effect, may include,without limitation, the emission spectrum, the intensity (includingwithout limitation, luminous intensity), and/or angular distribution ofemitted EM radiation, including without limitation, an angulardependence of a brightness, and/or color shift of the emitted EMradiation.

In some non-limiting examples, a sub-pixel 224 x may be associated witha first set of other sub-pixels 224 x to represent a first display pixel2710 and also with a second set of other sub-pixels 224 x to represent asecond display pixel 2710, so that the first and second display pixels2710 may have associated therewith, the same sub-pixel(s) 224 x.

The pattern, and/or organization of sub-pixels 224 x into display pixels2710 continues to develop. All present and future patterns, and/ororganizations are considered to fall within the scope of the presentdisclosure.

Non-Emissive Regions

In some non-limiting examples, the various emissive regions 610 of thedevice 1000 may be substantially surrounded and separated by, in atleast one lateral direction, at least one non-emissive region 1902 (FIG.19A), in which the structure, and/or configuration along thecross-sectional aspect, of the device structure 000 shown, withoutlimitation, in FIG. 10 , may be varied, to substantially inhibit EMradiation to be emitted therefrom. In some non-limiting examples, thenon-emissive regions 1902 may comprise those regions in the lateralaspect, that are substantially devoid of an emissive region 610.

Thus, as shown in the cross-sectional view of FIG. 16 , the lateraltopology of the various layers of the at least one semiconducting layer1530 may be varied to define at least one emissive region 610,surrounded (at least in one lateral direction) by at least onenon-emissive region 1902.

In some non-limiting examples, the emissive region 610 corresponding toa single display (sub-) pixel 2710/224 x may be understood to have alateral aspect 1610, surrounded in at least one lateral direction by atleast one non-emissive region 1902 having a lateral aspect 1620.

A non-limiting example of an implementation of the cross-sectionalaspect of the device 1000 as applied to an emissive region 610corresponding to a single display (sub-) pixel 2710/224 x of an OLEDdisplay 1000 will now be described. While features of suchimplementation are shown to be specific to the emissive region 610,those having ordinary skill in the relevant art will appreciate that insome non-limiting examples, more than one emissive region 610 mayencompass common features.

In some non-limiting examples, the first electrode 1520 may be disposedover an exposed layer surface 11 of the device 1000, in somenon-limiting examples, within at least a part of the lateral aspect 1610of the emissive region 610. In some non-limiting examples, at leastwithin the lateral aspect 1610 of the emissive region 610 of the (sub-)pixel(s) 2710/224 x, the exposed layer surface 11, may, at the time ofdeposition of the first electrode 1520, comprise the TFT insulatinglayer 1609 of the various TFT structures 1601 that make up the drivingcircuit for the emissive region 610 corresponding to a single display(sub-) pixel 2710/224 x.

In some non-limiting examples, the TFT insulating layer 1609 may beformed with an opening extending therethrough to permit the firstelectrode 1520 to be electrically coupled with one of the TFT electrodes1605, 1607, 1608, including, without limitation, as shown in FIG. 16 ,the TFT drain electrode 1608.

Those having ordinary skill in the relevant art will appreciate that thedriving circuit comprises a plurality of TFT structures 1601. In FIG. 16, for purposes of simplicity of illustration, only one TFT structure1601 may be shown, but it will be appreciated by those having ordinaryskill in the relevant art, that such TFT structure 1601 may berepresentative of such plurality thereof that comprise the drivingcircuit.

In a cross-sectional aspect, the configuration of each emissive region610 may, in some non-limiting examples, be defined by the introductionof at least one PDL 1640 substantially throughout the lateral aspects1620 of the surrounding non-emissive region(s) 1902. In somenon-limiting examples, the PDLs 1640 may comprise an insulating organic,and/or inorganic material.

In some non-limiting examples, the PDLs 1640 may be depositedsubstantially over the TFT insulating layer 1609, although, as shown, insome non-limiting examples, the PDLs 1640 may also extend over at leasta part of the deposited first electrode 1520, and/or its outer edges.

In some non-limiting examples, as shown in FIG. 16 , the cross-sectionalthickness, and/or profile of the PDLs 1640 may impart a substantiallyvalley-shaped configuration to the emissive region 610 of each (sub-)pixel 2710/224 x by a region of increased thickness along a boundary ofthe lateral aspect 1620 of the surrounding non-emissive region 1902 withthe lateral aspect of the surrounded emissive region 610, correspondingto a (sub-) pixel 2710/224 x.

In some non-limiting examples, the profile of the PDLs 1640 may have areduced thickness beyond such valley-shaped configuration, includingwithout limitation, away from the boundary between the lateral aspect1620 of the surrounding non-emissive region 1902 and the lateral aspect1610 of the surrounded emissive region 610, in some non-limitingexamples, substantially well within the lateral aspect 1620 of suchnon-emissive region 1902.

While the PDL(s) 1640 have been generally illustrated as having alinearly sloped surface to form a valley-shaped configuration thatdefine the emissive region(s) 610 surrounded thereby, those havingordinary skill in the relevant art will appreciate that in somenon-limiting examples, at least one of the shape, aspect ratio,thickness, width, and/or configuration of such PDL(s) 1640 may bevaried. By way of non-limiting example, a PDL 1640 may be formed with amore steep or more gradually sloped part. In some non-limiting examples,such PDL(s) 1640 may be configured to extend substantially normally awayfrom a surface on which it is deposited, that may cover at least oneedges of the first electrode 1520. In some non-limiting examples, suchPDL(s) 1640 may be configured to have deposited thereon at least onesemiconducting layer 1530 by a solution-processing technology, includingwithout limitation, by printing, including without limitation, ink-jetprinting.

In some non-limiting examples, the at least one semiconducting layer1530 may be deposited over the exposed layer surface 11 of the device1000, including at least a part of the lateral aspect 1610 of suchemissive region 610 of the (sub-) pixel(s) 2710/224 x. In somenon-limiting examples, at least within the lateral aspect 1610 of theemissive region 610 of the (sub-) pixel(s) 2710/224 x, such exposedlayer surface 11, may, at the time of deposition of the at least onesemiconducting layer 1530 (and/or layers 1531, 1533, 1535, 1537, 1539thereof), comprise the first electrode 1520.

In some non-limiting examples, the at least one semiconducting layer1530 may also extend beyond the lateral aspect 1610 of the emissiveregion 610 of the (sub-) pixel(s) 2710/224 x and at least partiallywithin the lateral aspects 1620 of the surrounding non-emissiveregion(s) 1902. In some non-limiting examples, such exposed layersurface 11 of such surrounding non-emissive region(s) 1902 may, at thetime of deposition of the at least one semiconducting layer 1530,comprise the PDL(s) 1640.

In some non-limiting examples, the second electrode 1540 may be disposedover an exposed layer surface 11 of the device 1000, including at leasta part of the lateral aspect 1610 of the emissive region 610 of the(sub-) pixel(s) 2710/224 x. In some non-limiting examples, at leastwithin the lateral aspect of the emissive region 610 of the (sub-)pixel(s) 2710/224 x, such exposed layer surface 11, may, at the time ofdeposition of the second electrode 1520, comprise the at least onesemiconducting layer 1530.

In some non-limiting examples, the second electrode 1540 may also extendbeyond the lateral aspect 1610 of the emissive region 610 of the (sub-)pixel(s) 2710/224 x and at least partially within the lateral aspects1620 of the surrounding non-emissive region(s) 1902. In somenon-limiting examples, such exposed layer surface 11 of such surroundingnon-emissive region(s) 1902 may, at the time of deposition of the secondelectrode 1540, comprise the PDL(s) 1640.

In some non-limiting examples, the second electrode 1540 may extendthroughout substantially all or a substantial part of the lateralaspects 1620 of the surrounding non-emissive region(s) 1902.

Selective Deposition of Patterned Electrode

In some non-limiting examples, the ability to achieve selectivedeposition of the deposited material 1231 in an open mask and/ormask-free deposition process by the prior selective deposition of apatterning coating 210, may be employed to achieve the selectivedeposition of a patterned electrode 1520, 1540, 2050 (FIG. 11 ), and/orat least one layer thereof, of an opto-electronic device, includingwithout limitation, an OLED device 1000, and/or a conductive elementelectrically coupled therewith.

In this fashion, the selective deposition of a patterning coating 210 inFIG. 11 using a shadow mask 1115, and the open mask and/or mask-freedeposition of the deposited material 1231, may be combined to effect theselective deposition of at least one deposited layer 1030 to form adevice feature, including without limitation, a patterned electrode1520, 1540, 2050, and/or at least one layer thereof, and/or a conductiveelement electrically coupled therewith, in the device 1000 shown in FIG.10 , without employing a shadow mask 1115 within the deposition processfor forming the deposited layer 1030. In some non-limiting examples,such patterning may permit, and/or enhance the transmissivity of thedevice 1000.

A number of non-limiting examples of such patterned electrodes 1520,1540, 2050, and/or at least one layer thereof, and/or a conductiveelement electrically coupled therewith, to impart various structuraland/or performance capabilities to such devices 1000 will now bedescribed.

As a result of the foregoing, there may be an aim to selectivelydeposit, across the lateral aspect 1610 of the emissive region 610 of a(sub-) pixel 2710/224 x, and/or the lateral aspect 1620 of thenon-emissive region(s) 1902 surrounding the emissive region 610, adevice feature, including without limitation, at least one of the firstelectrode 1520, the second electrode 1540, the auxiliary electrode 2050,and/or a conductive element electrically coupled therewith, in apattern, on an exposed layer surface 11 of a frontplane 1510 of thedevice 1000. In some non-limiting examples, the first electrode 1520,the second electrode 1540, and/or the auxiliary electrode 2050, may bedeposited in at least one of a plurality of deposited layers 1030.

FIG. 17 may show an example patterned electrode 1700 in plan, in thefigure, the second electrode 1540 suitable for use in an example version1800 (FIG. 18 ) of the device 1000. The electrode 1700 may be formed ina pattern 1710 that comprises a single continuous structure, having ordefining a patterned plurality of apertures 1720 therewithin, in whichthe apertures 1720 may correspond to regions of the device 1800 wherethere is no cathode.

In the figure, by way of non-limiting example, the pattern 1710 may bedisposed across the entire lateral extent of the device 1800, withoutdifferentiation between the lateral aspect(s) 1610 of emissive region(s)610 corresponding to (sub-) pixel(s) 2710/224 x and the lateralaspect(s) 1620 of non-emissive region(s) 1902 surrounding such emissiveregion(s) 610. Thus, the example illustrated may correspond to a device1800 that may be substantially transmissive relative to EM radiationincident on an external surface thereof, such that a substantial part ofsuch externally-incident EM radiation may be transmitted through thedevice 1800, in addition to the emission (in a top-emission,bottom-emission, and/or double-sided emission) of EM radiation generatedinternally within the device 1800 as disclosed herein.

The transmittivity of the device 1800 may be adjusted, and/or modifiedby altering the pattern 1710 employed, including without limitation, anaverage size of the apertures 1720, and/or a spacing, and/or density ofthe apertures 1720.

Turning now to FIG. 18 , there may be shown a cross-sectional view ofthe device 1800, taken along line 18-18 in FIG. 17 . In the figure, thedevice 900 may be shown as comprising the substrate 10, the firstelectrode 1520 and the at least one semiconducting layer 1530.

A patterning coating 210 may be selectively disposed in a patternsubstantially corresponding to the pattern 1710 on the exposed layersurface 11 of the underlying layer.

A deposited layer 1030 suitable for forming the patterned electrode1700, which in the figure is the second electrode 1540, may be disposedon substantially all of the exposed layer surface 11 of the underlyinglayer, using an open mask and/or a mask-free deposition process. Theunderlying layer may comprise both regions of the patterning coating210, disposed in the pattern 1710, and regions of the at least onesemiconducting layer 1530, in the pattern 1710 where the patterningcoating 210 has not been deposited. In some non-limiting examples, theregions of the patterning coating 210 may correspond substantially to afirst portion 401 comprising the apertures 1720 shown in the pattern1710.

Because of the nucleation-inhibiting properties of those regions of thepattern 1710 where the patterning coating 210 was disposed(corresponding to the apertures 1720), the deposited material 1231disposed on such regions may tend to not remain, resulting in a patternof selective deposition of the deposited layer 1030, that may correspondsubstantially to the remainder of the pattern 1710, leaving thoseregions of the first portion 401 of the pattern 1710 corresponding tothe apertures 1720 substantially devoid of a closed coating 1040 of thedeposited layer 1030.

In other words, the deposited layer 1030 that will form the cathode maybe selectively deposited substantially only on a second portion 402comprising those regions of the at least one semiconducting layer 1530that surround but do not occupy the apertures 1720 in the pattern 1710.

FIG. 19A may show, in plan view, a schematic diagram showing a pluralityof patterns 1910, 1920 of electrodes 1520, 1540, 2050.

In some non-limiting examples, the first pattern 1910 may comprise aplurality of elongated, spaced-apart regions that extend in a firstlateral direction. In some non-limiting examples, the first pattern 1910may comprise a plurality of first electrodes 1520. In some non-limitingexamples, a plurality of the regions that comprise the first pattern1910 may be electrically coupled.

In some non-limiting examples, the second pattern 1920 may comprise aplurality of elongated, spaced-apart regions that extend in a secondlateral direction. In some non-limiting examples, the second lateraldirection may be substantially normal to the first lateral direction. Insome non-limiting examples, the second pattern 1920 may comprise aplurality of second electrodes 1540. In some non-limiting examples, aplurality of the regions that comprise the second pattern 1920 may beelectrically coupled.

In some non-limiting examples, the first pattern 1910 and the secondpattern 1920 may form part of an example version, shown generally at1900, of the device 1000.

In some non-limiting examples, the lateral aspect(s) 1610 of emissiveregion(s) 610 corresponding to (sub-) pixel(s) 2710/224 x may be formedwhere the first pattern 1910 overlaps the second pattern 1920. In somenon-limiting examples, the lateral aspect(s) 1620 of non-emissiveregion(s) 1902 may correspond to any lateral aspect other than thelateral aspect(s) 1610.

In some non-limiting examples, a first terminal, which, in somenon-limiting examples, may be a positive terminal, of the power source1505, may be electrically coupled with at least one electrode 1520,1540, 2050 of the first pattern 1910. In some non-limiting examples, thefirst terminal may be coupled with the at least one electrode 1520,1540, 2050 of the first pattern 1910 through at least one drivingcircuit. In some non-limiting examples, a second terminal, which, insome non-limiting examples, may be a negative terminal, of the powersource 1505, may be electrically coupled with at least one electrode1520, 1540, 2050 of the second pattern 1920. In some non-limitingexamples, the second terminal may be coupled with the at least oneelectrode 1520, 1540, 2050 of the second pattern 1920 through the atleast one driving circuit.

Turning now to FIG. 19B, there may be shown a cross-sectional view ofthe device 1900, at a deposition stage 1900 b, taken along line 19B-19Bin FIG. 19A. In the figure, the device 1900 at the stage 1900 b may beshown as comprising the substrate 10.

A patterning coating 210 may be selectively disposed in a patternsubstantially corresponding to the inverse of the first pattern 1910 onthe exposed layer surface 11 of the underlying layer, which, as shown inthe figure, may be the substrate 10.

A deposited layer 1030 suitable for forming the first pattern 1910 ofelectrodes 1520, 1540, 2050, which in the figure is the first electrode1520, may be disposed on substantially all of the exposed layer surface11 of the underlying layer, using an open mask and/or a mask-freedeposition process. The underlying layer may comprise both regions ofthe patterning coating 210, disposed in the inverse of the first pattern1910, and regions of the substrate 10, disposed in the first pattern1910 where the patterning coating 210 has not been deposited. In somenon-limiting examples, the regions of the substrate 10 may correspondsubstantially to the elongated spaced-apart regions of the first pattern1910, while the regions of the patterning coating 210 may correspondsubstantially to a first portion 401 comprising the gaps therebetween.

Because of the nucleation-inhibiting properties of those regions of thefirst pattern 1910 where the patterning coating 210 was disposed(corresponding to the gaps therebetween), the deposited material 1231disposed on such regions may tend to not remain, resulting in a patternof selective deposition of the deposited layer 1030, that may correspondsubstantially to elongated spaced-apart regions of the first pattern1910, leaving a first portion 401 comprising the gaps therebetweensubstantially devoid of a closed coating 1040 of the deposited layer1030.

In other words, the deposited layer 1030 that may form the first pattern1910 of electrodes 1520, 1540, 2050 may be selectively depositedsubstantially only on a second portion 402 comprising those regions ofthe substrate 10 that define the elongated spaced-apart regions of thefirst pattern 1910.

Turning now to FIG. 19C, there may be shown a cross-sectional view 1900c of the device 1900, taken along line 19C-19C in FIG. 19A. In thefigure, the device 1900 may be shown as comprising the substrate 10; thefirst pattern 1910 of electrodes 1520 deposited as shown in FIG. 19B,and the at least one semiconducting layer(s) 1530.

In some non-limiting examples, the at least one semiconducting layer(s)1530 may be provided as a common layer across substantially all of thelateral aspect(s) of the device 1900.

A patterning coating 210 may be selectively disposed in a patternsubstantially corresponding to the second pattern 1920 on the exposedlayer surface 11 of the underlying layer, which, as shown in the figure,is the at least one semiconducting layer 1530.

A deposited layer 1030 suitable for forming the second pattern 1920 ofelectrodes 1520, 1540, 2050, which in the figure is the second electrode1540, may be disposed on substantially all of the exposed layer surface11 of the underlying layer, using an open mask and/or a mask-freedeposition process. The underlying layer may comprise both regions ofthe patterning coating 210, disposed in the inverse of the secondpattern 1920, and regions of the at least one semiconducting layer(s)1530, in the second pattern 1920 where the patterning coating 210 hasnot been deposited. In some non-limiting examples, the regions of the atleast one semiconducting layer(s) 1530 may correspond substantially to afirst portion 401 comprising the elongated spaced-apart regions of thesecond pattern 1920, while the regions of the patterning coating 210 maycorrespond substantially to the gaps therebetween.

Because of the nucleation-inhibiting properties of those regions of thesecond pattern 1920 where the patterning coating 210 was disposed(corresponding to the gaps therebetween), the deposited layer 1030disposed on such regions may tend not to remain, resulting in a patternof selective deposition of the deposited layer 1030, that may correspondsubstantially to elongated spaced-apart regions of the second pattern1920, leaving the first portion 401 comprising the gaps therebetweensubstantially devoid of a closed coating 1040 of the deposited layer1030.

In other words, the deposited layer 1030 that may form the secondpattern 1920 of electrodes 1520, 1540, 2050 may be selectively depositedsubstantially only on a second portion 402 comprising those regions ofthe at least one semiconducting layer 1530 that define the elongatedspaced-apart regions of the second pattern 1920.

In some non-limiting examples, an average layer thickness of thepatterning coating 210 and of the deposited layer 1030 depositedthereafter for forming either, or both, of the first pattern 1910,and/or the second pattern 1920 of electrodes 1520, 1540, 2050 may bevaried according to a variety of parameters, including withoutlimitation, a given application and given performance characteristics.In some non-limiting examples, the average layer thickness of thepatterning coating 210 may be comparable to, and/or substantially lessthan an average layer thickness of the deposited layer 1030 depositedthereafter. Use of a relatively thin patterning coating 210 to achieveselective patterning of a deposited layer 1030 deposited thereafter maybe suitable to provide flexible devices 1000. In some non-limitingexamples, a relatively thin patterning coating 210 may provide arelatively planar surface on which a barrier coating 1950 may bedeposited. In some non-limiting examples, providing such a relativelyplanar surface for application of the barrier coating 1950 may increaseadhesion of the barrier coating 1950 to such surface.

At least one of the first pattern 1910 of electrodes 1520, 1540, 2050and at least one of the second pattern 1920 of electrodes 1520, 1540,2050 may be electrically coupled with the power source 1505, whetherdirectly, and/or, in some non-limiting examples, through theirrespective driving circuit(s) to control EM radiation emission from thelateral aspect(s) 1610 of the emissive region(s) 610 corresponding to(sub-) pixel(s) 2710/224 x.

Auxiliary Electrode

Those having ordinary skill in the relevant art will appreciate that theprocess of forming the second electrode 1540 in the second pattern 1920shown in FIGS. 19A-19C may, in some non-limiting examples, be used insimilar fashion to form an auxiliary electrode 2050 for the device 1000.In some non-limiting examples, the second electrode 1540 thereof maycomprise a common electrode, and the auxiliary electrode 2050 may bedeposited in the second pattern 1920, in some non-limiting examples,above or in some non-limiting examples below, the second electrode 1540and electrically coupled therewith. In some non-limiting examples, thesecond pattern 1920 for such auxiliary electrode 2050 may be such thatthe elongated spaced-apart regions of the second pattern 1920 liesubstantially within the lateral aspect(s) 1620 of non-emissiveregion(s) 1902 surrounding the lateral aspect(s) 1610 of emissiveregion(s) 610 corresponding to (sub-) pixel(s) 2710/224 x. In somenon-limiting examples, the second pattern 1920 for such auxiliaryelectrodes 2050 may be such that the elongated spaced-apart regions ofthe second pattern 1920 lie substantially within the lateral aspect(s)1610 of emissive region(s) 610 corresponding to (sub-) pixel(s) 2710/224x, and/or the lateral aspect(s) 1620 of non-emissive region(s) 1902surrounding them.

FIG. 20 may show an example cross-sectional view of an example version2000 of the device 1000 that is substantially similar thereto, butfurther may comprise at least one auxiliary electrode 2050 disposed in apattern above and electrically coupled (not shown) with the secondelectrode 1540.

The auxiliary electrode 2050 may be electrically conductive. In somenon-limiting examples, the auxiliary electrode 2050 may be formed by atleast one metal, and/or metal oxide. Non-limiting examples of suchmetals include Cu, Al, molybdenum (Mo), or Ag. By way of non-limitingexample, the auxiliary electrode 2050 may comprise a multi-layermetallic structure, including without limitation, one formed byMo/Al/Mo. Non-limiting examples of such metal oxides include ITO, ZnO,IZO, or other oxides containing In, or Zn. In some non-limitingexamples, the auxiliary electrode 2050 may comprise a multi-layerstructure formed by a combination of at least one metal and at least onemetal oxide, including without limitation, Ag/ITO, Mo/ITO, ITO/Ag/ITO,or ITO/Mo/ITO. In some non-limiting examples, the auxiliary electrode2050 comprises a plurality of such electrically conductive materials.

The device 2000 may be shown as comprising the substrate 10, the firstelectrode 1520 and the at least one semiconducting layer 1530.

The second electrode 1540 may be disposed on substantially all of theexposed layer surface 11 of the at least one semiconducting layer 1530.

In some non-limiting examples, particularly in a top-emission device2000, the second electrode 1540 may be formed by depositing a relativelythin conductive film layer (not shown) in order, by way of non-limitingexample, to reduce optical interference (including, without limitation,attenuation, reflections, and/or diffusion) related to the presence ofthe second electrode 1540. In some non-limiting examples, as discussedelsewhere, a reduced thickness of the second electrode 1540, maygenerally increase a sheet resistance of the second electrode 1540,which may, in some non-limiting examples, reduce the performance, and/orefficiency of the device 2000. By providing the auxiliary electrode 2050that may be electrically coupled with the second electrode 1540, thesheet resistance and thus, the IR drop associated with the secondelectrode 1540, may, in some non-limiting examples, be decreased.

In some non-limiting examples, the device 2000 may be a bottom-emission,and/or double-sided emission device 2000. In such examples, the secondelectrode 1540 may be formed as a relatively thick conductive layerwithout substantially affecting optical characteristics of such a device2000. Nevertheless, even in such scenarios, the second electrode 1540may nevertheless be formed as a relatively thin conductive film layer(not shown), by way of non-limiting example, so that the device 2000 maybe substantially transmissive relative to EM radiation incident on anexternal surface thereof, such that a substantial part of suchexternally-incident EM radiation may be transmitted through the device2000, in addition to the emission of EM radiation generated internallywithin the device 2000 as disclosed herein.

A patterning coating 210 may be selectively disposed in a pattern on theexposed layer surface 11 of the underlying layer, which, as shown in thefigure, may be the at least one semiconducting layer 1530. In somenon-limiting examples, as shown in the figure, the patterning coating210 may be disposed, in a first portion 401 of the pattern, as a seriesof parallel rows 2020.

A deposited layer 1030 suitable for forming the patterned auxiliaryelectrode 2050, may be disposed on substantially all of the exposedlayer surface 11 of the underlying layer, using an open mask and/or amask-free deposition process. The underlying layer may comprise bothregions of the patterning coating 210, disposed in the pattern of rows2020, and regions of the at least one semiconducting layer 1530 wherethe patterning coating 210 has not been deposited.

Because of the nucleation-inhibiting properties of those rows 2020 wherethe patterning coating 210 was disposed, the deposited material 1231disposed on such rows 2020 may tend to not remain, resulting in apattern of selective deposition of the deposited layer 1030, that maycorrespond substantially to at least one second portion 402 of thepattern, leaving the first portion 401 comprising the rows 2020substantially devoid of a closed coating 1040 of the deposited layer1030.

In other words, the deposited layer 1030 that may form the auxiliaryelectrode 2050 may be selectively deposited substantially only on asecond portion 402 comprising those regions of the at least onesemiconducting layer 1530, that surround but do not occupy the rows2020.

In some non-limiting examples, selectively depositing the auxiliaryelectrode 2050 to cover only certain rows 2020 of the lateral aspect ofthe device 2000, while other regions thereof remain uncovered, maycontrol, and/or reduce optical interference related to the presence ofthe auxiliary electrode 2050.

In some non-limiting examples, the auxiliary electrode 2050 may beselectively deposited in a pattern that may not be readily detected bythe naked eye from a typical viewing distance.

In some non-limiting examples, the auxiliary electrode 2050 may beformed in devices other than OLED devices, including for decreasing aneffective resistance of the electrodes of such devices.

The ability to pattern electrodes 1520, 1540, 2050, including withoutlimitation, the second electrode 1540, and/or the auxiliary electrode2050 without employing a shadow mask 1115 during the high-temperaturedeposited layer 1030 deposition process by employing a patterningcoating 210, including without limitation, the process depicted in FIG.12 , may allow numerous configurations of auxiliary electrodes 2050 tobe deployed.

In some non-limiting examples, the auxiliary electrode 2050 may bedisposed between neighbouring emissive regions 610 and electricallycoupled with the second electrode 1540. In non-limiting examples, awidth of the auxiliary electrode 2050 may be less than a separationdistance between the neighbouring emissive regions 610. As a result,there may exist a gap within the at least one non-emissive region 1902on each side of the auxiliary electrode 2050. In some non-limitingexamples, such an arrangement may reduce a likelihood that the auxiliaryelectrode 2050 would interfere with an optical output of the device2000, in some non-limiting examples, from at least one of the emissiveregions 610. In some non-limiting examples, such an arrangement may beappropriate where the auxiliary electrode 2050 is relatively thick (insome non-limiting examples, greater than several hundred nm, and/or onthe order of a few microns in thickness). In some non-limiting examples,an aspect ratio of the auxiliary electrode 2050 may exceed about 0.05,such as at least one of at least about: 0.1, 0.2, 0.5, 0.8, 1, or 2. Byway of non-limiting example, a height (thickness) of the auxiliaryelectrode 2050 may exceed about 50 nm, such as at least one of at leastabout: 80 nm, 100 nm, 200 nm, 500 nm, 700 nm, 1,000 nm, 1,500 nm, 1,700nm, or 2,000 nm.

FIG. 21 may show, in plan view, a schematic diagram showing an exampleof a pattern 2150 of the auxiliary electrode 2050 formed as a grid thatmay be overlaid over both the lateral aspects 1610 of emissive regions610, which may correspond to (sub-) pixel(s) 2710/224 x of an exampleversion 2100 of device 1000, and the lateral aspects 1620 ofnon-emissive regions 1902 surrounding the emissive regions 610.

In some non-limiting examples, the auxiliary electrode pattern 2150 mayextend substantially only over some but not all of the lateral aspects1620 of non-emissive regions 1902, to not substantially cover any of thelateral aspects 1610 of the emissive regions 610.

Those having ordinary skill in the relevant art will appreciate thatwhile, in the figure, the pattern 2150 of the auxiliary electrode 2050may be shown as being formed as a continuous structure such that allelements thereof are both physically connected to and electricallycoupled with one another and electrically coupled with at least oneelectrode 1520, 1540, 2050, which in some non-limiting examples may bethe first electrode 1520, and/or the second electrode 1540, in somenon-limiting examples, the pattern 2150 of the auxiliary electrode 2050may be provided as a plurality of discrete elements of the pattern 2150of the auxiliary electrode 2050 that, while remaining electricallycoupled with one another, may not be physically connected to oneanother. Even so, such discrete elements of the pattern 2150 of theauxiliary electrode 2050 may still substantially lower a sheetresistance of the at least one electrode 1520, 1540, 2050 with whichthey are electrically coupled, and consequently of the device 2100, toincrease an efficiency of the device 2100 without substantiallyinterfering with its optical characteristics.

In some non-limiting examples, auxiliary electrodes 2050 may be employedin devices 2100 with a variety of arrangements of (sub-) pixel(s)2710/224 x. In some non-limiting examples, the (sub-) pixel 2710/224 xarrangement may be substantially diamond-shaped.

By way of non-limiting example, FIG. 22A may show, in plan, in anexample version 2200 of device 1000, a plurality of groups 2141-2143 ofemissive regions 610 each corresponding to a sub-pixel 224 x, surroundedby the lateral aspects of a plurality of non-emissive regions 1902comprising PDLs 1640 in a diamond configuration. In some non-limitingexamples, the configuration may be defined by patterns 2241-2243 ofemissive regions 610 and PDLs 1640 in an alternating pattern of firstand second rows.

In some non-limiting examples, the lateral aspects 1620 of thenon-emissive regions 1902 comprising PDLs 1640 may be substantiallyelliptically shaped. In some non-limiting examples, the major axes ofthe lateral aspects 1620 of the non-emissive regions 1902 in the firstrow may be aligned and substantially normal to the major axes of thelateral aspects 1620 of the non-emissive regions 1902 in the second row.In some non-limiting examples, the major axes of the lateral aspects1620 of the non-emissive regions 1902 in the first row may besubstantially parallel to an axis of the first row.

In some non-limiting examples, a first group 2241 of emissive regions610 may correspond to sub-pixels 224 x that emit EM radiation at a firstwavelength, in some non-limiting examples the sub-pixels 224 x of thefirst group 2241 may correspond to R(ed) sub-pixels 2241. In somenon-limiting examples, the lateral aspects 1610 of the emissive regions610 of the first group 2241 may have a substantially diamond-shapedconfiguration. In some non-limiting examples, the emissive regions 610of the first group 2241 may lie in the pattern of the first row,preceded and followed by PDLs 1640. In some non-limiting examples, thelateral aspects 1610 of the emissive regions 610 of the first group 2241may slightly overlap the lateral aspects 1620 of the preceding andfollowing non-emissive regions 1902 comprising PDLs 1640 in the samerow, as well as of the lateral aspects 1620 of adjacent non-emissiveregions 1902 comprising PDLs 1640 in a preceding and following patternof the second row.

In some non-limiting examples, a second group 2242 of emissive regions610 may correspond to sub-pixels 224 x that emit EM radiation at asecond wavelength, in some non-limiting examples the sub-pixels 224 x ofthe second group 2242 may correspond to G(reen) sub-pixels 2242. In somenon-limiting examples, the lateral aspects 1610 of the emissive regions610 of the second group 2241 may have a substantially ellipticalconfiguration. In some non-limiting examples, the emissive regions 610of the second group 2241 may lie in the pattern of the second row,preceded and followed by PDLs 1640. In some non-limiting examples, amajor axis of some of the lateral aspects 1610 of the emissive regions610 of the second group 2241 may be at a first angle, which in somenon-limiting examples, may be 45° relative to an axis of the second row.In some non-limiting examples, a major axis of others of the lateralaspects 1610 of the emissive regions 610 of the second group 2241 may beat a second angle, which in some non-limiting examples may besubstantially normal to the first angle. In some non-limiting examples,the emissive regions 610 of the second group 2242, whose lateral aspects1610 may have a major axis at the first angle, may alternate with theemissive regions 610 of the second group 2242, whose lateral aspects1610 may have a major axis at the second angle.

In some non-limiting examples, a third group 2243 of emissive regions610 may correspond to sub-pixels 224 x that emit EM radiation at a thirdwavelength, in some non-limiting examples the sub-pixels 224 x of thethird group 2243 may correspond to B(lue) sub-pixels 2243. In somenon-limiting examples, the lateral aspects 1610 of the emissive regions610 of the third group 2243 may have a substantially diamond-shapedconfiguration. In some non-limiting examples, the emissive regions 610of the third group 2243 may lie in the pattern of the first row,preceded and followed by PDLs 1640. In some non-limiting examples, thelateral aspects 1610 of the emissive regions 610 of the third group 2243may slightly overlap the lateral aspects 1620 of the preceding andfollowing non-emissive regions 1902 comprising PDLs 1640 in the samerow, as well as of the lateral aspects 1620 of adjacent non-emissiveregions 1902 comprising PDLs 1640 in a preceding and following patternof the second row. In some non-limiting examples, the pattern of thesecond row may comprise emissive regions 610 of the first group 2241alternating emissive regions 610 of the third group 2243, each precededand followed by PDLs 1640.

Turning now to FIG. 22B, there may be shown an example cross-sectionalview of the device 2200, taken along line 22B-22B in FIG. 22A. In thefigure, the device 2200 may be shown as comprising a substrate 10 and aplurality of elements of a first electrode 1520, formed on an exposedlayer surface 11 thereof. The substrate 10 may comprise the basesubstrate 1512 (not shown for purposes of simplicity of illustration),and/or at least one TFT structure 1601 (not shown for purposes ofsimplicity of illustration), corresponding to and for driving eachsub-pixel 224 x. PDLs 1640 may be formed over the substrate 10 betweenelements of the first electrode 1520, to define emissive region(s) 610over each element of the first electrode 1520, separated by non-emissiveregion(s) 1902 comprising the PDL(s) 1640. In the figure, the emissiveregion(s) 610 may all correspond to the second group 2242.

In some non-limiting examples, at least one semiconducting layer 1530may be deposited on each element of the first electrode 1520, betweenthe surrounding PDLs 1640.

In some non-limiting examples, a second electrode 1540, which in somenon-limiting examples, may be a common cathode, may be deposited overthe emissive region(s) 610 of the second group 2242 to form the G(reen)sub-pixel(s) 2242 thereof and over the surrounding PDLs 1640.

In some non-limiting examples, a patterning coating 210 may beselectively deposited over the second electrode 1540 across the lateralaspects 1610 of the emissive region(s) 610 of the second group 2242 ofG(reen) sub-pixels 2242 to allow selective deposition of a depositedlayer 1030 over parts of the second electrode 1540 that may besubstantially devoid of the patterning coating 210, namely across thelateral aspects 1620 of the non-emissive region(s) 1902 comprising thePDLs 1640. In some non-limiting examples, the deposited layer 1030 maytend to accumulate along the substantially planar parts of the PDLs1640, as the deposited layer 1030 may tend to not remain on the inclinedparts of the PDLs 1640 but may tend to descend to a base of suchinclined parts, which may be coated with the patterning coating 210. Insome non-limiting examples, the deposited layer 1030 on thesubstantially planar parts of the PDLs 1640 may form at least oneauxiliary electrode 2050 that may be electrically coupled with thesecond electrode 1540.

In some non-limiting examples, the device 1300 may comprise a CPL,and/or an outcoupling layer. By way of non-limiting example, such CPL,and/or outcoupling layer may be provided directly on a surface of thesecond electrode 1540, and/or a surface of the patterning coating 210.In some non-limiting examples, such CPL, and/or outcoupling layer may beprovided across the lateral aspect of at least one emissive region 610corresponding to a (sub-) pixel 2710/224 x.

In some non-limiting examples, the patterning coating 210 may also actas an index-matching coating. In some non-limiting examples, thepatterning coating 210 may also act as an outcoupling layer.

In some non-limiting examples, the device 1300 may comprise anencapsulation layer 2250. Non-limiting examples of such encapsulationlayer 2250 include a glass cap, a barrier film, a barrier adhesive, abarrier coating 1950, and/or a TFE layer such as shown in dashed outlinein the figure, provided to encapsulate the device 2200. In somenon-limiting examples, the TFE layer 2250 may be considered a type ofbarrier coating 1950.

In some non-limiting examples, the encapsulation layer 2250 may bearranged above at least one of the second electrode 1540, and/or thepatterning coating 210. In some non-limiting examples, the device 2200may comprise additional optical, and/or structural layers, coatings, andcomponents, including without limitation, a polarizer, a color filter,an anti-reflection coating, an anti-glare coating, cover glass, and/oran optically clear adhesive (OCA).

Turning now to FIG. 22C, there may be shown an example cross-sectionalview of the device 2200, taken along line 22C-22C in FIG. 22A. In thefigure, the device 2200 may be shown as comprising a substrate 10 and aplurality of elements of a first electrode 1520, formed on an exposedlayer surface 11 thereof. PDLs 1640 may be formed over the substrate 10between elements of the first electrode 1520, to define emissiveregion(s) 610 over each element of the first electrode 1520, separatedby non-emissive region(s) 1902 comprising the PDL(s) 1640. In thefigure, the emissive region(s) 610 may correspond to the first group2241 and to the third group 2243 in alternating fashion.

In some non-limiting examples, at least one semiconducting layer 1530may be deposited on each element of the first electrode 1520, betweenthe surrounding PDLs 1640.

In some non-limiting examples, a second electrode 1540, which in somenon-limiting examples, may be a common cathode, may be deposited overthe emissive region(s) 610 of the first group 2241 to form the R(ed)sub-pixel(s) 2241 thereof, over the emissive region(s) 610 of the thirdgroup 2243 to form the B(lue) sub-pixel(s) 2243 thereof, and over thesurrounding PDLs 1640.

In some non-limiting examples, a patterning coating 210 may beselectively deposited over the second electrode 1540 across the lateralaspects 1610 of the emissive region(s) 610 of the first group 2241 ofR(ed) sub-pixels 2241 and of the third group 2243 of B(lue) sub-pixels2243 to allow selective deposition of a deposited layer 1030 over partsof the second electrode 1540 that may be substantially devoid of thepatterning coating 210, namely across the lateral aspects 1620 of thenon-emissive region(s) 1902 comprising the PDLs 1640. In somenon-limiting examples, the deposited layer 1030 may tend to accumulatealong the substantially planar parts of the PDLs 1640, as the depositedlayer 1030 may tend to not remain on the inclined parts of the PDLs 1640but may tend to descend to a base of such inclined parts, which arecoated with the patterning coating 210. In some non-limiting examples,the deposited layer 1030 on the substantially planar parts of the PDLs1640 may form at least one auxiliary electrode 2050 that may beelectrically coupled with the second electrode 1540.

Turning now to FIG. 23 , there may be shown an example version 1400 ofthe device 1000, which may encompass the device shown in cross-sectionalview in FIG. 16 , but with additional deposition steps that aredescribed herein.

The device 2300 may show a patterning coating 210 selectively depositedover the exposed layer surface 11 of the underlying layer, in thefigure, the second electrode 1540, within a first portion 401 of thedevice 2300, corresponding substantially to the lateral aspect 1610 ofemissive region(s) 610 corresponding to (sub-) pixel(s) 2710/224 x andnot within a second portion 402 of the device 2300, correspondingsubstantially to the lateral aspect(s) 1620 of non-emissive region(s)1902 surrounding the first portion 401.

In some non-limiting examples, the patterning coating 210 may beselectively deposited using a shadow mask 1115.

The patterning coating 210 may provide, within the first portion 401, anexposed layer surface 11 with a relatively low initial stickingprobability against deposition of a deposited material 1231 to bethereafter deposited as a deposited layer 1030 to form an auxiliaryelectrode 2050.

After selective deposition of the patterning coating 210, the depositedmaterial 1231 may be deposited over the device 2300 but may remainsubstantially only within the second portion 402, which may besubstantially devoid of any patterning coating 210, to form theauxiliary electrode 2050.

In some non-limiting examples, the deposited material 1231 may bedeposited using an open mask and/or a mask-free deposition process.

The auxiliary electrode 2050 may be electrically coupled with the secondelectrode 1540 to reduce a sheet resistance of the second electrode1540, including, as shown, by lying above and in physical contact withthe second electrode 1540 across the second portion that may besubstantially devoid of any patterning coating 210.

In some non-limiting examples, the deposited layer 1030 may comprisesubstantially the same material as the second electrode 1540, to ensurea high initial sticking probability against deposition of the depositedmaterial 1231 in the second portion 402.

In some non-limiting examples, the second electrode 1540 may comprisesubstantially pure Mg, and/or an alloy of Mg and another metal,including without limitation, Ag. In some non-limiting examples, anMg:Ag alloy composition may range from about 1:9-9:1 by volume. In somenon-limiting examples, the second electrode 1540 may comprise metaloxides, including without limitation, ternary metal oxides, such as,without limitation, ITO, and/or IZO, and/or a combination of metals,and/or metal oxides.

In some non-limiting examples, the deposited layer 1030 used to form theauxiliary electrode 2050 may comprise substantially pure Mg.

Turning now to FIG. 24 , there may be shown an example version 2400 ofthe device 1000, which may encompass the device shown in cross-sectionalview in FIG. 16 , but with additional deposition steps that aredescribed herein.

The device 2400 may show a patterning coating 210 selectively depositedover the exposed layer surface 11 of the underlying layer, in thefigure, the second electrode 1540, within a first portion 401 of thedevice 2400, corresponding substantially to a part of the lateral aspect1610 of emissive region(s) 610 corresponding to (sub-) pixel(s) 2710/224x, and not within a second portion 402. In the figure, the first portion401 may extend partially along the extent of an inclined part of thePDLs 1640 defining the emissive region(s) 610.

In some non-limiting examples, the patterning coating 210 may beselectively deposited using a shadow mask 1115.

The patterning coating 210 may provide, within the first portion 401, anexposed layer surface 11 with a relatively low initial stickingprobability against deposition of a deposited material 1231 to bethereafter deposited as a deposited layer 1030 to form an auxiliaryelectrode 2050.

After selective deposition of the patterning coating 210, the depositedmaterial 1231 may be deposited over the device 2400 but may remainsubstantially only within the second portion 402, which may besubstantially devoid of patterning coating 210, to form the auxiliaryelectrode 2050. As such, in the device 2400, the auxiliary electrode2050 may extend partly across the inclined part of the PDLs 1640defining the emissive region(s) 610.

In some non-limiting examples, the deposited layer 1030 may be depositedusing an open mask and/or a mask-free deposition process.

The auxiliary electrode 2050 may be electrically coupled with the secondelectrode 1540 to reduce a sheet resistance of the second electrode1540, including, as shown, by lying above and in physical contact withthe second electrode 1540 across the second portion 402 that may besubstantially devoid of patterning coating 210.

In some non-limiting examples, the material of which the secondelectrode 1540 may be comprised, may not have a high initial stickingprobability against deposition of the deposited material 1231.

FIG. 25 may illustrate such a scenario, in which there may be shown anexample version 2500 of the device 1000, which may encompass the deviceshown in cross-sectional view in FIG. 16 , but with additionaldeposition steps that are described herein.

The device 2500 may show an NPC 1420 deposited over the exposed layersurface 11 of the underlying material, in the figure, the secondelectrode 1540.

In some non-limiting examples, the NPC 1420 may be deposited using anopen mask and/or a mask-free deposition process.

Thereafter, a patterning coating 210 may be deposited selectivelydeposited over the exposed layer surface 11 of the underlying material,in the figure, the NPC 1420, within a first portion 401 of the device2500, corresponding substantially to a part of the lateral aspect 1610of emissive region(s) 610 corresponding to (sub-) pixel(s) 2710/224 x,and not within a second portion 402 of the device 2500, correspondingsubstantially to the lateral aspect(s) 1620 of non-emissive region(s)1902 surrounding the first portion 401.

In some non-limiting examples, the patterning coating 210 may beselectively deposited using a shadow mask 1115.

The patterning coating 210 may provide, within the first portion 401, anexposed layer surface 11 with a relatively low initial stickingprobability against deposition of a deposited material 1231 to bethereafter deposited as a deposited layer 1030 to form an auxiliaryelectrode 2050.

After selective deposition of the patterning coating 210, the depositedmaterial 1231 may be deposited over the device 2500 but may remainsubstantially only within the second portion 402, which may besubstantially devoid of patterning coating 210, to form the auxiliaryelectrode 2050.

In some non-limiting examples, the deposited layer 1030 may be depositedusing an open mask and/or a mask-free deposition process.

The auxiliary electrode 2050 may be electrically coupled with the secondelectrode 1540 to reduce a sheet resistance thereof. While, as shown,the auxiliary electrode 2050 may not be lying above and in physicalcontact with the second electrode 1540, those having ordinary skill inthe relevant art will nevertheless appreciate that the auxiliaryelectrode 2050 may be electrically coupled with the second electrode1540 by several well-understood mechanisms. By way of non-limitingexample, the presence of a relatively thin film (in some non-limitingexamples, of up to about 50 nm) of a patterning coating 210 may stillallow a current to pass therethrough, thus allowing a sheet resistanceof the second electrode 1540 to be reduced.

Turning now to FIG. 26 , there may be shown an example version 2600 ofthe device 1000, which may encompass the device shown in cross-sectionalview in FIG. 16 , but with additional deposition steps that aredescribed herein.

The device 2600 may show a patterning coating 210 deposited over theexposed layer surface 11 of the underlying material, in the figure, thesecond electrode 1540.

In some non-limiting examples, the patterning coating 210 may bedeposited using an open mask and/or a mask-free deposition process.

The patterning coating 210 may provide an exposed layer surface 11 witha relatively low initial sticking probability against deposition of adeposited material 1231 to be thereafter deposited as a deposited layer1030 to form an auxiliary electrode 2050.

After deposition of the patterning coating 210, an NPC 1420 may beselectively deposited over the exposed layer surface 11 of theunderlying layer, in the figure, the patterning coating 210,corresponding substantially to a part of the lateral aspect 1620 ofnon-emissive region(s) 1902, and surrounding a second portion 402 of thedevice 2600, corresponding substantially to the lateral aspect(s) 1610of emissive region(s) 610 corresponding to (sub-) pixel(s) 2710/224 x.

In some non-limiting examples, the NPC 1420 may be selectively depositedusing a shadow mask 1115.

The NPC 1420 may provide, within the first portion 401, an exposed layersurface 11 with a relatively high initial sticking probability againstdeposition of a deposited material 1231 to be thereafter deposited as adeposited layer 1030 to form an auxiliary electrode 2050.

After selective deposition of the NPC 1420, the deposited material 1231may be deposited over the device 2600 but may remain substantially wherethe patterning coating 210 has been overlaid with the NPC 1420, to formthe auxiliary electrode 2050.

In some non-limiting examples, the deposited layer 1030 may be depositedusing an open mask and/or a mask-free deposition process.

The auxiliary electrode 2050 may be electrically coupled with the secondelectrode 1540 to reduce a sheet resistance of the second electrode1540.

Transparent OLED

Because the OLED device 1000 may emit EM radiation through either, orboth, of the first electrode 1520 (in the case of a bottom-emission,and/or a double-sided emission device), as well as the substrate 10,and/or the second electrode 1540 (in the case of a top-emission, and/ordouble-sided emission device), there may be an aim to make either, orboth of, the first electrode 1520, and/or the second electrode 1540substantially photon- (or light)-transmissive (“transmissive”), in somenon-limiting examples, at least across a substantial part of the lateralaspect of the emissive region(s) 610 of the device 1000. In the presentdisclosure, such a transmissive element, including without limitation,an electrode 1520, 1540, a material from which such element may beformed, and/or property thereof, may comprise an element, material,and/or property thereof that is substantially transmissive(“transparent”), and/or, in some non-limiting examples, partiallytransmissive (“semi-transparent”), in some non-limiting examples, in atleast one wavelength range.

A variety of mechanisms may be adopted to impart transmissive propertiesto the device 1000, at least across a substantial part of the lateralaspect of the emissive region(s) 610 thereof.

In some non-limiting examples, including without limitation, where thedevice 1000 is a bottom-emission device, and/or a double-sided emissiondevice, the TFT structure(s) 1601 of the driving circuit associated withan emissive region 610 of a (sub-) pixel 2710/224 x, which may at leastpartially reduce the transmissivity of the surrounding substrate 10, maybe located within the lateral aspect 1620 of the surroundingnon-emissive region(s) 1902 to avoid impacting the transmissiveproperties of the substrate 10 within the lateral aspect 1610 of theemissive region 610.

In some non-limiting examples, where the device 1000 is a double-sidedemission device, in respect of the lateral aspect 1610 of an emissiveregion 610 of a (sub-) pixel 2710/224 x, a first one of the electrode1520, 1540 may be made substantially transmissive, including withoutlimitation, by at least one of the mechanisms disclosed herein, inrespect of the lateral aspect 1610 of neighbouring, and/or adjacent(sub-) pixel(s) 2710/224 x, a second one of the electrodes 1520, 1540may be made substantially transmissive, including without limitation, byat least one of the mechanisms disclosed herein. Thus, the lateralaspect 1610 of a first emissive region 610 of a (sub-) pixel 2710/224 xmay be made substantially top-emitting while the lateral aspect 1610 ofa second emissive region 610 of a neighbouring (sub-) pixel 2710/224 xmay be made substantially bottom-emitting, such that a subset of the(sub-) pixel(s) 2710/224 x may be substantially top-emitting and asubset of the (sub-) pixel(s) 2710/224 x may be substantiallybottom-emitting, in an alternating (sub-) pixel 2710/224 x sequence,while only a single electrode 1520, 1540 of each (sub-) pixel 2710/224 xmay be made substantially transmissive.

In some non-limiting examples, a mechanism to make an electrode 1520,1540, in the case of a bottom-emission device, and/or a double-sidedemission device, the first electrode 1520, and/or in the case of atop-emission device, and/or a double-sided emission device, the secondelectrode 1540, transmissive, may be to form such electrode 1520, 1540of a transmissive thin film.

In some non-limiting examples, an electrically conductive depositedlayer 1030, in a thin film, including without limitation, those formedby a depositing a thin conductive film layer of a metal, includingwithout limitation, Ag, Al, and/or by depositing a thin layer of ametallic alloy, including without limitation, an Mg:Ag alloy, and/or aYb:Ag alloy, may exhibit transmissive characteristics. In somenon-limiting examples, the alloy may comprise a composition ranging frombetween about 1:9-9:1 by volume. In some non-limiting examples, theelectrode 1520, 1540 may be formed of a plurality of thin conductivefilm layers of any combination of deposited layers 1030, any at leastone of which may be comprised of TCOs, thin metal films, thin metallicalloy films, and/or any combination of any of these.

In some non-limiting examples, especially in the case of such thinconductive films, a relatively thin layer thickness may be up tosubstantially a few tens of nm to contribute to enhanced transmissivequalities but also favorable optical properties (including withoutlimitation, reduced microcavity effects) for use in an OLED device 600.

In some non-limiting examples, a reduction in the thickness of anelectrode 1520, 1540 to promote transmissive qualities may beaccompanied by an increase in the sheet resistance of the electrode1520, 1540.

In some non-limiting examples, a device 1000 having at least oneelectrode 1520, 1540 with a high sheet resistance may create a largecurrent resistance (IR) drop when coupled with the power source 1505, inoperation. In some non-limiting examples, such an IR drop may becompensated for, to some extent, by increasing a level of the powersource 1505. However, in some non-limiting examples, increasing thelevel of the power source 1505 to compensate for the IR drop due to highsheet resistance, for at least one (sub-) pixel 2710/224 x may call forincreasing the level of a voltage to be supplied to other components tomaintain effective operation of the device 1000.

In some non-limiting examples, to reduce power supply demands for adevice 1000 without significantly impacting an ability to make anelectrode 1520, 1540 substantially transmissive (by employing at leastone thin film layer of any combination of TCOs, thin metal films, and/orthin metallic alloy films), an auxiliary electrode 2050 may be formed onthe device 1000 to allow current to be carried more effectively tovarious emissive region(s) 610 of the device 1000, while at the sametime, reducing the sheet resistance and its associated IR drop of thetransmissive electrode 1520, 1540.

In some non-limiting examples, a sheet resistance specification, for acommon electrode 1520, 1540 of a display device 1000, may vary accordingto several parameters, including without limitation, a (panel) size ofthe device 1000, and/or a tolerance for voltage variation across thedevice 1000. In some non-limiting examples, the sheet resistancespecification may increase (that is, a lower sheet resistance isspecified) as the panel size increases. In some non-limiting examples,the sheet resistance specification may increase as the tolerance forvoltage variation decreases.

In some non-limiting examples, a sheet resistance specification may beused to derive an example thickness of an auxiliary electrode 2050 tocomply with such specification for various panel sizes.

By way of non-limiting example, for a top-emission device, the secondelectrode 1540 may be made transmissive. On the other hand, in somenon-limiting examples, such auxiliary electrode 2050 may not besubstantially transmissive but may be electrically coupled with thesecond electrode 1540, including without limitation, by deposition of aconductive deposited layer 1030 therebetween, to reduce an effectivesheet resistance of the second electrode 1540.

In some non-limiting examples, such auxiliary electrode 2050 may bepositioned, and/or shaped in either, or both of, a lateral aspect,and/or cross-sectional aspect to not interfere with the emission ofphotons from the lateral aspect of the emissive region 610 of a (sub-)pixel 2710/224 x.

In some non-limiting examples, a mechanism to make the first electrode1520, and/or the second electrode 1540, may be to form such electrode1520, 1540 in a pattern across at least a part of the lateral aspect ofthe emissive region(s) 610 thereof, and/or in some non-limitingexamples, across at least a part of the lateral aspect 1620 of thenon-emissive region(s) 1902 surrounding them. In some non-limitingexamples, such mechanism may be employed to form the auxiliary electrode2050 in a position, and/or shape in either, or both of, a lateralaspect, and/or cross-sectional aspect to not interfere with the emissionof photons from the lateral aspect 1610 of the emissive region 610 of a(sub-) pixel 2710/224 x, as discussed above.

In some non-limiting examples, the device 1000 may be configured suchthat it may be substantially devoid of a conductive oxide material in anoptical path of EM radiation emitted by the device 1000. By way ofnon-limiting example, in the lateral aspect 1610 of at least oneemissive region 610 corresponding to a (sub-) pixel 2710/224 x, at leastone of the layers, and/or coatings deposited after the at least onesemiconducting layer 1530, including without limitation, the secondelectrode 1540, the patterning coating 210, and/or any other layers,and/or coatings deposited thereon, may be substantially devoid of anyconductive oxide material. In some non-limiting examples, beingsubstantially devoid of any conductive oxide material may reduceabsorption, and/or reflection of EM radiation emitted by the device1000. By way of non-limiting example, conductive oxide materials,including without limitation, ITO, and/or IZO, may absorb EM radiationin at least the B(lue) region of the visible spectrum, which may, ingenerally, reduce efficiency, and/or performance of the device 600.

In some non-limiting examples, a combination of these, and/or othermechanisms may be employed.

Additionally, in some non-limiting examples, in addition to rendering atleast one of the first electrode 1520, the second electrode 1540, and/orthe auxiliary electrode 2050, substantially transmissive across at leastacross a substantial part of the lateral aspect 1610 of the emissiveregion 610 corresponding to the (sub-) pixel(s) 2710/224 x of the device1000, to allow EM radiation to be emitted substantially across thelateral aspect 1610 thereof, there may be an aim to make at least one ofthe lateral aspect(s) 1620 of the surrounding non-emissive region(s)1902 of the device 1000 substantially transmissive in both the bottomand top directions, to render the device 1000 substantially transmissiverelative to EM radiation incident on an external surface thereof, suchthat a substantial part of such externally-incident EM radiation may betransmitted through the device 1000, in addition to the emission (in atop-emission, bottom-emission, and/or double-sided emission) of EMradiation generated internally within the device 600 as disclosedherein.

Turning now to FIG. 27A, there may be shown an example view in plan of atransmissive (transparent) version, shown generally at 2700, of thedevice 1000. In some non-limiting examples, the device 2700 may be anactive matrix OLED (AMOLED) device having a plurality of pixels or pixelregions 2710 and a plurality of transmissive regions 520. In somenon-limiting examples, at least one auxiliary electrode 2050 may bedeposited on an exposed layer surface 11 of an underlying materialbetween the pixel region(s) 2710, and/or the transmissive region(s) 520.

In some non-limiting examples, each pixel region 2710 may comprise aplurality of emissive regions 610 each corresponding to a sub-pixel 224x. In some non-limiting examples, the sub-pixels 224 x may correspondto, respectively, R(ed) sub-pixels 2241, G(reen) sub-pixels 2242, and/orB(lue) sub-pixels 2243.

In some non-limiting examples, each transmissive region 520 may besubstantially transparent and allows EM radiation to pass through theentirety of a cross-sectional aspect thereof.

Turning now to FIG. 27B, there may be shown an example cross-sectionalview of a version 2700 of the device 1000, taken along line 27B-27B inFIG. 27A. In the figure, the device 2700 may be shown as comprising asubstrate 10, a TFT insulating layer 1609 and a first electrode 1520formed on a surface of the TFT insulating layer 1609. In somenon-limiting examples, the substrate 10 may comprise the base substrate1512 (not shown for purposes of simplicity of illustration), and/or atleast one TFT structure 1601, corresponding to, and for driving, eachsub-pixel 224 x positioned substantially thereunder and electricallycoupled with the first electrode 1520 thereof. In some non-limitingexamples, PDL(s) 1640 may be formed in non-emissive regions 1902 overthe substrate 10, to define emissive region(s) 610 also corresponding toeach sub-pixel 224 x, over the first electrode 1520 correspondingthereto. In some non-limiting examples, the PDL(s) 1640 may cover edgesof the first electrode 1520.

In some non-limiting examples, at least one semiconducting layer 1530may be deposited over exposed region(s) of the first electrode 1520 and,in some non-limiting examples, at least parts of the surrounding PDLs1640.

In some non-limiting examples, a second electrode 1540 may be depositedover the at least one semiconducting layer(s) 1530, including over thepixel region 2710 to form the sub-pixel(s) 224 x thereof and, in somenon-limiting examples, at least partially over the surrounding PDLs 1640in the transmissive region 520.

In some non-limiting examples, a patterning coating 210 may beselectively deposited over first portion(s) 401 of the device 2700,comprising both the pixel region 2710 and the transmissive region 520but not the region of the second electrode 1540 corresponding to theauxiliary electrode 2050 comprising second portion(s) 402 thereof.

In some non-limiting examples, the entire exposed layer surface 11 ofthe device 2700 may then be exposed to a vapor flux 1232 of thedeposited material 1231, which in some non-limiting examples may be Mg.The deposited layer 1030 may be selectively deposited over secondportion(s) of the second electrode 1540 that may be substantially devoidof the patterning coating 210 to form an auxiliary electrode 2050 thatmay be electrically coupled with and in some non-limiting examples, inphysical contact with uncoated parts of the second electrode 1540.

At the same time, the transmissive region 520 of the device 2700 mayremain substantially devoid of any materials that may substantiallyaffect the transmission of EM radiation therethrough. In particular, asshown in the figure, the TFT structure 1601 and the first electrode 1520may be positioned, in a cross-sectional aspect, below the sub-pixel 224x corresponding thereto, and together with the auxiliary electrode 2050,may lie beyond the transmissive region 520. As a result, thesecomponents may not attenuate or impede light from being transmittedthrough the transmissive region 520. In some non-limiting examples, sucharrangement may allow a viewer viewing the device 2700 from a typicalviewing distance to see through the device 2700, in some non-limitingexamples, when all the (sub-) pixel(s) 2710/224 x may not be emitting,thus creating a transparent device 2700.

While not shown in the figure, in some non-limiting examples, the device2700 may further comprise an NPC 1420 disposed between the auxiliaryelectrode 2050 and the second electrode 1540. In some non-limitingexamples, the NPC 1420 may also be disposed between the patterningcoating 210 and the second electrode 1540.

In some non-limiting examples, the patterning coating 210 may be formedconcurrently with the at least one semiconducting layer(s) 1530. By wayof non-limiting example, at least one material used to form thepatterning coating 210 may also be used to form the at least onesemiconducting layer(s) 1530. In such non-limiting example, severalstages for fabricating the device 2700 may be reduced.

Those having ordinary skill in the relevant art will appreciate that insome non-limiting examples, various other layers, and/or coatings,including without limitation those forming the at least onesemiconducting layer(s) 1530, and/or the second electrode 1540, maycover a part of the transmissive region 520, especially if such layers,and/or coatings are substantially transparent. In some non-limitingexamples, the PDL(s) 1640 may have a reduced thickness, includingwithout limitation, by forming a well therein, which in somenon-limiting examples may be similar to the well defined for emissiveregion(s) 610, to further facilitate transmission of EM radiationthrough the transmissive region 520.

Those having ordinary skill in the relevant art will appreciate that(sub-) pixel(s) 2710/224 x arrangements other than the arrangement shownin FIGS. 27A and 27B may, in some non-limiting examples, be employed.

Those having ordinary skill in the relevant art will appreciate thatarrangements of the auxiliary electrode(s) 1150 other than thearrangement shown in FIGS. 27A and 27B may, in some non-limitingexamples, be employed. By way of non-limiting example, the auxiliaryelectrode(s) 1150 may be disposed between the pixel region 2710 and thetransmissive region 520. By way of non-limiting example, the auxiliaryelectrode(s) 1150 may be disposed between sub-pixel(s) 224 x within apixel region 2710.

Turning now to FIG. 28A, there may be shown an example plan view of atransparent version, shown generally at 2800, of the device 1000. Insome non-limiting examples, the device 2800 may be an AMOLED devicehaving a plurality of pixel regions 2710 and a plurality of transmissiveregions 520. The device 2800 may differ from device 2700 in that noauxiliary electrode(s) 1150 lie between the pixel region(s) 2710, and/orthe transmissive region(s) 520.

In some non-limiting examples, each pixel region 2710 may comprise aplurality of emissive regions 610, each corresponding to a sub-pixel 224x. In some non-limiting examples, the sub-pixels 224 x may correspondto, respectively, R(ed) sub-pixels 2241, G(reen) sub-pixels 2242, and/orB(lue) sub-pixels 2243.

In some non-limiting examples, each transmissive region 520 may besubstantially transparent and may allow light to pass through theentirety of a cross-sectional aspect thereof.

Turning now to FIG. 28B, there may be shown an example cross-sectionalview of the device 2800, taken along line 28-28 in FIG. 28A. In thefigure, the device 2800 may be shown as comprising a substrate 10, a TFTinsulating layer 1609 and a first electrode 1520 formed on a surface ofthe TFT insulating layer 1609. The substrate 10 may comprise the basesubstrate 1512 (not shown for purposes of simplicity of illustration),and/or at least one TFT structure 1601 corresponding to, and fordriving, each sub-pixel 224 x positioned substantially thereunder andelectrically coupled with the first electrode 1520 thereof. PDL(s) 1640may be formed in non-emissive regions 1902 over the substrate 10, todefine emissive region(s) 610 also corresponding to each sub-pixel 224x, over the first electrode 1520 corresponding thereto. The PDL(s) 1640cover edges of the first electrode 1520.

In some non-limiting examples, at least one semiconducting layer 1530may be deposited over exposed region(s) of the first electrode 1520 and,in some non-limiting examples, at least parts of the surrounding PDLs1640.

In some non-limiting examples, a first deposited layer 1030 a may bedeposited over the at least one semiconducting layer(s) 1530, includingover the pixel region 2710 to form the sub-pixel(s) 224 x thereof andover the surrounding PDLs 1640 in the transmissive region 520. In somenon-limiting examples, the average layer thickness of the firstdeposited layer 1030 a may be relatively thin such that the presence ofthe first deposited layer 1030 a across the transmissive region 520 doesnot substantially attenuate transmission of EM radiation therethrough.In some non-limiting examples, the first deposited layer 1030 a may bedeposited using an open mask and/or mask-free deposition process.

In some non-limiting examples, a patterning coating 210 may beselectively deposited over first portions 401 of the device 2800,comprising the transmissive region 520.

In some non-limiting examples, the entire exposed layer surface 11 ofthe device 2800 may then be exposed to a vapor flux 1232 of thedeposited material 1231, which in some non-limiting examples may be Mg,to selectively deposit a second deposited layer 1030 b, over secondportion(s) 402 of the first deposited layer 1030 a that may besubstantially devoid of the patterning coating 210, in some examples,the pixel region 2710, such that the second deposited layer 1030 b maybe electrically coupled with and in some non-limiting examples, inphysical contact with uncoated parts of the first deposited layer 1030a, to form the second electrode 1540.

In some non-limiting examples, an average layer thickness of the firstdeposited layer 1030 a may be no more than an average layer thickness ofthe second deposited layer 1030 b. In this way, relatively hightransmittance may be maintained in the transmissive region 520, overwhich only the first deposited layer 1030 a may extend. In somenon-limiting examples, an average layer thickness of the first depositedlayer 1030 a may be no more than at least one of about: 30 nm, 25 nm, 20nm, 15 nm, 10 nm, 8 nm, or 5 nm. In some non-limiting examples, anaverage layer thickness of the second deposited layer 1030 b may be nomore than at least one of about: 30 nm, 25 nm, 20 nm, 15 nm, 10 nm, or 8nm.

Thus, in some non-limiting examples, an average layer thickness of thesecond electrode 1540 may be no more than about 40 nm, and/or in somenon-limiting examples, at least one of between about: 5-30 nm, 10-25 nm,or 15-25 nm.

In some non-limiting examples, the average layer thickness of the firstdeposited layer 1030 a may exceed the average layer thickness of thesecond deposited layer 1030 b. In some non-limiting examples, theaverage layer thickness of the first deposited layer 1030 a and theaverage layer thickness of the second deposited layer 1030 b may besubstantially the same.

In some non-limiting examples, at least one deposited material 1231 usedto form the first deposited layer 1030 a may be substantially the sameas at least one deposited material 1231 used to form the seconddeposited layer 1030 b. In some non-limiting examples, such at least onedeposited material 1231 may be substantially as described herein inrespect of the first electrode 1520, the second electrode 1540, theauxiliary electrode 2050, and/or a deposited layer 1030 thereof.

In some non-limiting examples, the first deposited layer 1030 a mayprovide, at least in part, the functionality of an EIL 1539, in thepixel region 2710. Non-limiting examples, of the deposited material 1231for forming the first deposited layer 1030 a include Yb, which forexample, may be about 1-3 nm in thickness.

In some non-limiting examples, the transmissive region 520 of the device2800 may remain substantially devoid of any materials that maysubstantially inhibit the transmission of EM radiation, includingwithout limitation, EM signals, including without limitation, in the IRspectrum and/or NIR spectrum, therethrough. In particular, as shown inthe figure, the TFT structure 1609, and/or the first electrode 1520 maybe positioned, in a cross-sectional aspect below the sub-pixel 224 xcorresponding thereto and beyond the transmissive region 520. As aresult, these components may not attenuate or impede EM radiation frombeing transmitted through the transmissive region 520. In somenon-limiting examples, such arrangement may allow a viewer viewing thedevice 2800 from a typical viewing distance to see through the device2800, in some non-limiting examples, when the (sub-) pixel(s) 2710/224 xare not emitting, thus creating a transparent AMOLED device 2800.

In some non-limiting examples, such arrangement may also allow an IRemitter 530 _(t) and/or an IR detector 530 _(r) to be arranged behindthe AMOLED device 2800 such that EM signals, including withoutlimitation, in the IR and/or NIR spectrum, to be exchanged through theAMOLED device 2800 by such under-display components 530.

While not shown in the figure, in some non-limiting examples, the device1900 may further comprise an NPC 1420 disposed between the seconddeposited layer 1030 b and the first deposited layer 1030 a. In somenon-limiting examples, the NPC 1420 may also be disposed between thepatterning coating 210 and the first deposited layer 1030 a.

In some non-limiting examples, the patterning coating 210 may be formedconcurrently with the at least one semiconducting layer(s) 1530. By wayof non-limiting example, at least one material used to form thepatterning coating 210 may also be used to form the at least onesemiconducting layer(s) 1530. In such non-limiting example, severalstages for fabricating the device 2800 may be reduced.

Those having ordinary skill in the relevant art will appreciate that insome non-limiting examples, various other layers, and/or coatings,including without limitation those forming the at least onesemiconducting layer(s) 1530, and/or the first deposited layer 1030 a,may cover a part of the transmissive region 520, especially if suchlayers, and/or coatings are substantially transparent. In somenon-limiting examples, the PDL(s) 1640 may have a reduced thickness,including without limitation, by forming a well therein, which in somenon-limiting examples may be similar to the well defined for emissiveregion(s) 610, to further facilitate transmission of EM radiationthrough the transmissive region 520.

Those having ordinary skill in the relevant art will appreciate that(sub-) pixel(s) 2710/224 x arrangements other than the arrangement shownin FIGS. 28A and 28B may, in some non-limiting examples, be employed.

Turning now to FIG. 28C, there may be shown an example cross-sectionalview of a different version 2810 of the device 1000, taken along thesame line 28-28 in FIG. 28A. In the figure, the device 2810 may be shownas comprising a substrate 10, a TFT insulating layer 1609 and a firstelectrode 1520 formed on a surface of the TFT insulating layer 1609. Thesubstrate 10 may comprise the base substrate 1512 (not shown forpurposes of simplicity of illustration), and/or at least one TFTstructure 1601 corresponding to and for driving each sub-pixel 224 xpositioned substantially thereunder and electrically coupled with thefirst electrode 1520 thereof. PDL(s) 1640 may be formed in non-emissiveregions 1902 over the substrate 10, to define emissive region(s) 610also corresponding to each sub-pixel 224 x, over the first electrode1520 corresponding thereto. The PDL(s) 1640 may cover edges of the firstelectrode 1520.

In some non-limiting examples, at least one semiconducting layer 1530may be deposited over exposed region(s) of the first electrode 1520 and,in some non-limiting examples, at least parts of the surrounding PDLs1640.

In some non-limiting examples, a patterning coating 210 may beselectively deposited over first portions 401 of the device 2810,comprising the transmissive region 520.

In some non-limiting examples, a deposited layer 1030 may be depositedover the at least one semiconducting layer(s) 1530, including over thepixel region 2710 to form the sub-pixel(s) 224 x thereof but not overthe surrounding PDLs 1640 in the transmissive region 520. In somenon-limiting examples, the first deposited layer 1030 a may be depositedusing an open mask and/or mask-free deposition process. In somenon-limiting examples, such deposition may be effected by exposing theentire exposed layer surface 11 of the device 2810 to a vapor flux 1232of the deposited material 1231, which in some non-limiting examples maybe Mg, to selectively deposit the deposited layer 1030 over secondportions 402 of the at least one semiconducting layer(s) 1530 that aresubstantially devoid of the patterning coating 210, in some non-limitingexamples, the pixel region 2710, such that the deposited layer 1030 maybe deposited on the at least one semiconducting layer(s) 1530 to formthe second electrode 1540.

In some non-limiting examples, the transmissive region 520 of the device1910 may remain substantially devoid of any materials that maysubstantially affect the transmission of EM radiation therethrough,including without limitation, EM signals, including without limitation,in the IR and/or NIR spectrum. In particular, as shown in the figure,the TFT structure 1601, and/or the first electrode 1520 may bepositioned, in a cross-sectional aspect below the sub-pixel 224 xcorresponding thereto and beyond the transmissive region 520. As aresult, these components may not attenuate or impede EM radiation frombeing transmitted through the transmissive region 520. In somenon-limiting examples, such arrangement may allow a viewer viewing thedevice 2810 from a typical viewing distance to see through the device2810, in some non-limiting examples, when the (sub-) pixel(s) 2710/224 xare not emitting, thus creating a transparent AMOLED device 1910.

By providing a transmissive region 520 that may be free, and/orsubstantially devoid of any deposited layer 1030, the transmittance insuch region may, in some non-limiting examples, be favorably enhanced,by way of non-limiting example, by comparison to the device 2800 of FIG.28B.

While not shown in the figure, in some non-limiting examples, the device2810 may further comprise an NPC 1420 disposed between the depositedlayer 1030 and the at least one semiconducting layer(s) 1530. In somenon-limiting examples, the NPC 1420 may also be disposed between thepatterning coating 210 and the PDL(s) 1640.

While not shown in FIGS. 28B and 28C for sake of simplicity, thosehaving ordinary skill in the relevant art will appreciate that in somenon-limiting examples, an EM radiation-absorbing layer 120 may bedisposed thereon, to facilitate absorption of EM radiation in thetransmissive region 620 in at least a part of the visible spectrum,while allowing EM signals 531 having a wavelength in at least a part ofthe IR and/or NIR spectrum to be exchanged through the device in thetransmissive region 620.

In some non-limiting examples, the patterning coating 210 may be formedconcurrently with the at least one semiconducting layer(s) 1530. By wayof non-limiting example, at least one material used to form thepatterning coating 210 may also be used to form the at least onesemiconducting layer(s) 1530. In such non-limiting example, severalstages for fabricating the device 2810 may be reduced.

In some non-limiting examples, at least one layer of the at least onesemiconducting layer 1530 may be deposited in the transmissive region620 to provide the patterning coating 210. By way of non-limitingexample, the ETL 1537 of the at least one semiconducting layer 1530 maybe a patterning coating 210 that may be deposited in both the emissiveregion 610 and the transmissive region 620 during the deposition of theat least one semiconducting layer 1530. The EIL 1539 may then beselectively deposited in the emissive region 610 over the ETL 1537, suchthat the exposed layer surface 11 of the ETL 1537 in the transmissiveregion 620 may be substantially devoid of the EIL 1539. The exposedlayer surface 11 of the EIL 1530 in the emissive region 610 and theexposed layer surface of the ETL, which acts as the patterning coating210, may then be exposed to a vapor flux 1232 of the deposited material1231 to form a closed coating 1040 of the deposited layer 1030 on theEIL 1539 in the emissive region 610, and a discontinuous layer 130 ofthe deposited material 1231 on the EIL 1539 in the transmissive region620.

Those having ordinary skill in the relevant art will appreciate that insome non-limiting examples, various other layers, and/or coatings,including without limitation those forming the at least onesemiconducting layer(s) 1530, and/or the deposited layer 1030, may covera part of the transmissive region 620, especially if such layers, and/orcoatings are substantially transparent. In some non-limiting examples,the PDL(s) 1640 may have a reduced thickness, including withoutlimitation, by forming a well therein, which in some non-limitingexamples may be similar to the well defined for emissive region(s) 610,to further facilitate transmission of EM radiation through thetransmissive region 620.

Those having ordinary skill in the relevant art will appreciate that(sub-) pixel(s) 2710/224 x arrangements other than the arrangement shownin FIGS. 28A and 28C may, in some non-limiting examples, be employed.

Selective Deposition to Modulate Electrode Thickness over EmissiveRegion(s)

As discussed above, modulating the thickness of an electrode 1520, 1540,2050 in and across a lateral aspect 1610 of emissive region(s) 610 of a(sub-) pixel 2710/224 x may impact the microcavity effect observable. Insome non-limiting examples, selective deposition of at least onedeposited layer 1030 through deposition of at least one patterningcoating 210, including without limitation, an NIC and/or an NPC 1420, inthe lateral aspects 1610 of emissive region(s) 610 corresponding todifferent sub-pixel(s) 224 x in a pixel region 2710 may allow theoptical microcavity effect in each emissive region 610 to be controlled,and/or modulated to optimize desirable optical microcavity effects on asub-pixel 224 x basis, including without limitation, an emissionspectrum, a luminous intensity, and/or an angular dependence of abrightness, and/or a color shift of emitted light.

Such effects may be controlled by independently modulating an averagelayer thickness and/or a number of the deposited layer(s) 1030, disposedin each emissive region 610 of the sub-pixel(s) 224 x. By way ofnon-limiting example, the average layer thickness of a second electrode1540 disposed over a B(lue) sub-pixel 2243 may be less than the averagelayer thickness of a second electrode 1540 disposed over a G(reen)sub-pixel 2242, and the average layer thickness of a second electrode1540 disposed over a G(reen) sub-pixel 2242 may be less than the averagelayer thickness of a second electrode 1540 disposed over a R(ed)sub-pixel 2241.

In some non-limiting examples, such effects may be controlled to an evengreater extent by independently modulating the average layer thicknessand/or a number of the deposited layers 1030, but also of the patterningcoating 210 and/or an NPC 1420, deposited in part(s) of each emissiveregion 610 of the sub-pixel(s) 224 x.

As shown by way of non-limiting example in FIG. 29 , there may bedeposited layer(s) 130 of varying average layer thickness selectivelydeposited for emissive region(s) 610 corresponding to sub-pixel(s) 224x, in some non-limiting examples, in a version 2900 of an OLED displaydevice 1000, having different emission spectra. In some non-limitingexamples, a first emissive region 610 a may correspond to a sub-pixel224 x configured to emit EM radiation of a first wavelength, and/oremission spectrum, and/or in some non-limiting examples, a secondemissive region 610 b may correspond to a sub-pixel 224 x configured toemit EM radiation of a second wavelength, and/or emission spectrum. Insome non-limiting examples, a device 2900 may comprise a third emissiveregion 610 c that may correspond to a sub-pixel 224 x configured to emitEM radiation of a third wavelength, and/or emission spectrum.

In some non-limiting examples, the first wavelength may be less than,greater than, and/or equal to at least one of the second wavelength,and/or the third wavelength. In some non-limiting examples, the secondwavelength may be less than, greater than, and/or equal to at least oneof the first wavelength, and/or the third wavelength. In somenon-limiting examples, the third wavelength may be less than, greaterthan, and/or equal to at least one of the first wavelength, and/or thesecond wavelength.

In some non-limiting examples, the device 2900 may also comprise atleast one additional emissive region 610 (not shown) that may in somenon-limiting examples be configured to emit EM radiation having awavelength, and/or emission spectrum that is substantially identical toat least one of the first emissive region 610 a, the second emissiveregion 610 b, and/or the third emissive region 610 c.

In some non-limiting examples, the patterning coating 210 may beselectively deposited using a shadow mask 1115 that may also have beenused to deposit the at least one semiconducting layer 1530 of the firstemissive region 610 a. In some non-limiting examples, such shared use ofa shadow mask 1115 may allow the optical microcavity effect(s) to betuned for each sub-pixel 224 x in a cost-effective manner.

The device 2000 may be shown as comprising a substrate 10, a TFTinsulating layer 1609 and a plurality of first electrodes 1520, formedon an exposed layer surface 11 of the TFT insulating layer 1609.

In some non-limiting examples, the substrate 10 may comprise the basesubstrate 1512 (not shown for purposes of simplicity of illustration),and/or at least one TFT structure 1601 corresponding to, and fordriving, a corresponding emissive region 610, each having acorresponding sub-pixel 224 x, positioned substantially thereunder andelectrically coupled with its associated first electrode 1520. PDL(s)1640 may be formed over the substrate 10, to define emissive region(s)610. In some non-limiting examples, the PDL(s) 1640 may cover edges oftheir respective first electrodes 1520.

In some non-limiting examples, at least one semiconducting layer 1530may be deposited over exposed region(s) of their respective firstelectrodes 1520 and, in some non-limiting examples, at least parts ofthe surrounding PDLs 1640.

In some non-limiting examples, a first deposited layer 1030 a may bedeposited over the at least one semiconducting layer(s) 1530. In somenon-limiting examples, the first deposited layer 1030 a may be depositedusing an open mask and/or mask-free deposition process. In somenon-limiting examples, such deposition may be effected by exposing theentire exposed layer surface 11 of the device 2900 to a vapor flux 1232of deposited material 1231, which in some non-limiting examples may beMg, to deposit the first deposited layer 1030 a over the at least onesemiconducting layer(s) 1530 to form a first layer of the secondelectrode 1540 a (not shown), which in some non-limiting examples may bea common electrode, at least for the first emissive region 610 a. Suchcommon electrode may have a first thickness t_(c1) in the first emissiveregion 610 a. In some non-limiting examples, the first thickness t_(c1)may correspond to a thickness of the first deposited layer 1030 a.

In some non-limiting examples, a first patterning coating 210 a may beselectively deposited over first portions 401 of the device 2000,comprising the first emissive region 610 a.

In some non-limiting examples, a second deposited layer 1030 b may bedeposited over the device 2900. In some non-limiting examples, thesecond deposited layer 1030 b may be deposited using an open mask and/ormask-free deposition process. In some non-limiting examples, suchdeposition may be effected by exposing the entire exposed layer surface11 of the device 2900 to a vapor flux 1232 of deposited material 1231,which in some non-limiting examples may be Mg, to deposit the seconddeposited layer 1030 b over the first deposited layer 1030 a that may besubstantially devoid of the first patterning coating 210 a, in someexamples, the second and third emissive regions 610 b, 610 c, and/or atleast part(s) of the non-emissive region(s) 1902 in which the PDLs 1640lie, such that the second deposited layer 1030 b may be deposited on thesecond portion(s) 402 of the first deposited layer 1030 a that aresubstantially devoid of the first patterning coating 210 a to form asecond layer of the second electrode 1540 b (not shown), which in somenon-limiting examples, may be a common electrode, at least for thesecond emissive region 610 b. In some non-limiting examples, such commonelectrode may have a second thickness t_(c2) in the second emissiveregion 610 b. In some non-limiting examples, the second thickness t_(c2)may correspond to a combined average layer thickness of the firstdeposited layer 1030 a and of the second deposited layer 1030 b and mayin some non-limiting examples exceed the first thickness t_(c1).

In some non-limiting examples, a second patterning coating 210 b may beselectively deposited over further first portions 401 of the device2900, comprising the second emissive region 610 b.

In some non-limiting examples, a third deposited layer 1030 c may bedeposited over the device 2900. In some non-limiting examples, the thirddeposited layer 1030 c may be deposited using an open mask and/ormask-free deposition process. In some non-limiting examples, suchdeposition may be effected by exposing the entire exposed layer surface11 of the device 2900 to a vapor flux 1232 of deposited material 1231,which in some non-limiting examples may be Mg, to deposit the thirddeposited layer 1030 c over the second deposited layer 1030 b that maybe substantially devoid of either the first patterning coating 210 a orthe second patterning coating 210 b, in some examples, the thirdemissive region 610 c, and/or at least part(s) of the non-emissiveregion 1902 in which the PDLs 1640 lie, such that the third depositedlayer 1030 c may be deposited on the further second portion(s) 402 ofthe second deposited layer 1030 b that are substantially devoid of thesecond patterning coating 210 b to form a third layer of the secondelectrode 1540 c (not shown), which in some non-limiting examples, maybe a common electrode, at least for the third emissive region 610 c. Insome non-limiting examples, such common electrode may have a thirdthickness t_(c3) in the third emissive region 610 c. In somenon-limiting examples, the third thickness t_(c3) may correspond to acombined thickness of the first deposited layer 1030 a, the seconddeposited layer 1030 b and the third deposited layer 1030 c and may insome non-limiting examples exceed either, or both of, the firstthickness t_(c1) and the second thickness t_(c2).

In some non-limiting examples, a third patterning coating 210 c may beselectively deposited over additional first portions 401 of the device2000, comprising the third emissive region 610 b.

In some non-limiting examples, at least one auxiliary electrode 2050 maybe disposed in the non-emissive region(s) 1902 of the device 2900between neighbouring emissive regions 610 thereof and in somenon-limiting examples, over the PDLs 1640. In some non-limitingexamples, the deposited layer 1030 used to deposit the at least oneauxiliary electrode 2050 may be deposited using an open mask and/ormask-free deposition process. In some non-limiting examples, suchdeposition may be effected by exposing the entire exposed layer surface11 of the device 2900 to a vapor flux 1232 of deposited material 1231,which in some non-limiting examples may be Mg, to deposit the depositedlayer 1030 over the exposed parts of the first deposited layer 1030 a,the second deposited layer 1030 b and the third deposited layer 1030 cthat may be substantially devoid of any of the first patterning coating210 a the second patterning coating 210 b, and/or the third patterningcoating 210 c, such that the deposited layer 1030 may be deposited on anadditional second portion 402 comprising the exposed part(s) of thefirst deposited layer 1030 a, the second deposited layer 1030 b, and/orthe third deposited layer 1030 c that may be substantially devoid of anyof the first patterning coating 210 a, the second patterning coating 210b, and/or the third patterning coating 210 c to form the at least oneauxiliary electrode 2050. In some non-limiting examples, each of the atleast one auxiliary electrodes 2050 may be electrically coupled with arespective one of the second electrodes 1540. In some non-limitingexamples, each of the at least one auxiliary electrode 2050 may be inphysical contact with such second electrode 1540.

In some non-limiting examples, the first emissive region 610 a, thesecond emissive region 610 b and the third emissive region 610 c may besubstantially devoid of a closed coating 1040 of the deposited material1231 used to form the at least one auxiliary electrode 2050.

In some non-limiting examples, at least one of the first deposited layer1030 a, the second deposited layer 1030 b, and/or the third depositedlayer 1030 c may be transmissive, and/or substantially transparent in atleast a part of the visible spectrum. Thus, in some non-limitingexamples, the second deposited layer 1030 b, and/or the third depositedlayer 1030 a (and/or any additional deposited layer(s) 1030) may bedisposed on top of the first deposited layer 1030 a to form amulti-coating electrode 1520, 1540, 2050 that may also be transmissive,and/or substantially transparent in at least a part of the visiblespectrum. In some non-limiting examples, the transmittance of any of theat least one of the first deposited layer 1030 a, the second depositedlayer 1030 b, the third deposited layer 1030 c, any additional depositedlayer(s) 1030, and/or the multi-coating electrode 1520, 1540, 2050 mayexceed at least one of about: 30%, 40% 45%, 50%, 60%, 70%, 75%, or 80%in at least a part of the visible spectrum.

In some non-limiting examples, an average layer thickness of the firstdeposited layer 1030 a, the second deposited layer 1030 b, and/or thethird deposited layer 1030 c may be made relatively thin to maintain arelatively high transmittance. In some non-limiting examples, an averagelayer thickness of the first deposited layer 1030 a may be at least oneof between about: 5-30 nm, 8-25 nm, or 10-20 nm. In some non-limitingexamples, an average layer thickness of the second deposited layer 1030b may be at least one of between about: 1-25 nm, 1-20 nm, 1-15 nm, 1-10nm, or 3-6 nm. In some non-limiting examples, an average layer thicknessof the third deposited layer 1030 c may be at least one of betweenabout: 1-25 nm, 1-20 nm, 1-15 nm, 1-10 nm, or 3-6 nm. In somenon-limiting examples, a thickness of a multi-coating electrode formedby a combination of the first deposited layer 1030 a, the seconddeposited layer 1030 b, the third deposited layer 1030 c, and/or anyadditional deposited layer(s) 330 may be at least one of between about:6-35 nm, 10-30 nm, 10-25 nm, or 12-18 nm.

In some non-limiting examples, a thickness of the at least one auxiliaryelectrode 2050 may exceed an average layer thickness of the firstdeposited layer 1030 a, the second deposited layer 1030 b, the thirddeposited layer 1030 c, and/or a common electrode. In some non-limitingexamples, the thickness of the at least one auxiliary electrode 2050 mayexceed at least one of about: 50 nm, 80 nm, 100 nm, 150 nm, 200 nm, 300nm, 400 nm, 500 nm, 700 nm, 800 nm, 1 μm, 1.2 μm, 1.5 μm, 2 μm, 2.5 μm,or 3 μm.

In some non-limiting examples, the at least one auxiliary electrode 2050may be substantially non-transparent, and/or opaque. However, since theat least one auxiliary electrode 2050 may be, in some non-limitingexamples, provided in a non-emissive region 1902 of the device 2900, theat least one auxiliary electrode 2050 may not cause or contribute tosignificant optical interference. In some non-limiting examples, thetransmittance of the at least one auxiliary electrode 2050 may be nomore than at least one of about: 50%, 70%, 80%, 85%, 90%, or 95% in atleast a part of the visible spectrum.

In some non-limiting examples, the at least one auxiliary electrode 2050may absorb EM radiation in at least a part of the visible spectrum.

In some non-limiting examples, an average layer thickness of the firstpatterning coating 210 a, the second patterning coating 210 b, and/orthe third patterning coating 210 c disposed in the first emissive region610 a, the second emissive region 610 b, and/or the third emissiveregion 610 c respectively, may be varied according to a colour, and/oremission spectrum of EM radiation emitted by each emissive region 610.In some non-limiting examples, the first patterning coating 210 a mayhave a first patterning coating thickness t_(n1), the second patterningcoating 210 b may have a second patterning coating thickness t_(n2),and/or the third patterning coating 210 c may have a third patterningcoating thickness t_(n3). In some non-limiting examples, the firstpatterning coating thickness t_(n1), the second patterning coatingthickness t_(n2), and/or the third patterning coating thickness t_(n3),may be substantially the same. In some non-limiting examples, the firstpatterning coating thickness t_(n1), the second patterning coatingthickness t_(n2), and/or the third patterning coating thickness t_(n3),may be different from one another.

In some non-limiting examples, the device 2900 may also comprise anynumber of emissive regions 610 a-610 c, and/or (sub-) pixel(s) 2710/224x thereof. In some non-limiting examples, a device may comprise aplurality of pixels 2710, wherein each pixel 2710 comprises two, threeor more sub-pixel(s) 224 x.

Those having ordinary skill in the relevant art will appreciate that thespecific arrangement of (sub-) pixel(s) 2710/224 x may be varieddepending on the device design. In some non-limiting examples, thesub-pixel(s) 224 x may be arranged according to known arrangementschemes, including without limitation, RGB side-by-side, diamond, and/orPenTile®.

Conductive Coating for Electrically Coupling an Electrode to anAuxiliary Electrode

Turning to FIG. 30 , there may be shown a cross-sectional view of anexample version 3000 of the device 1000. The device 3000 may comprise ina lateral aspect, an emissive region 610 and an adjacent non-emissiveregion 1902.

In some non-limiting examples, the emissive region 610 may correspond toa sub-pixel 224 x of the device 3000. The emissive region 610 may have asubstrate 10, a first electrode 1520, a second electrode 1540 and atleast one semiconducting layer 1530 arranged therebetween.

The first electrode 1520 may be disposed on an exposed layer surface 11of the substrate 10. The substrate 10 may comprise a TFT structure 1601,that may be electrically coupled with the first electrode 1520. Theedges, and/or perimeter of the first electrode 1520 may generally becovered by at least one PDL 1640.

The non-emissive region 1902 may have an auxiliary electrode 2050 and afirst part of the non-emissive region 1902 may have a projectingstructure 3060 arranged to project over and overlap a lateral aspect ofthe auxiliary electrode 2050. The projecting structure 3060 may extendlaterally to provide a sheltered region 3065. By way of non-limitingexample, the projecting structure 3060 may be recessed at, and/or nearthe auxiliary electrode 2050 on at least one side to provide thesheltered region 3065. As shown, the sheltered region 3065 may in somenon-limiting examples, correspond to a region on a surface of the PDL1640 that may overlap with a lateral projection of the projectingstructure 3060. The non-emissive region 1902 may further comprise adeposited layer 1030 disposed in the sheltered region 3065. Thedeposited layer 1030 may electrically couple the auxiliary electrode2050 with the second electrode 1540.

A patterning coating 210 a may be disposed in the emissive region 610over the exposed layer surface 11 of the second electrode 1540. In somenon-limiting examples, an exposed layer surface 11 of the projectingstructure 3060 may be coated with a residual thin conductive film fromdeposition of a thin conductive film to form a second electrode 1540. Insome non-limiting examples, an exposed layer surface 11 of the residualthin conductive film may be coated with a residual patterning coating210 b from deposition of the patterning coating 210.

However, because of the lateral projection of the projecting structure3060 over the sheltered region 3065, the sheltered region 3065 may besubstantially devoid of patterning coating 210. Thus, when a depositedlayer 1030 may be deposited on the device 2100 after deposition of thepatterning coating 210, the deposited layer 1030 may be deposited on,and/or migrate to the sheltered region 3065 to couple the auxiliaryelectrode 2050 to the second electrode 1540.

Those having ordinary skill in the relevant art will appreciate that anon-limiting example has been shown in FIG. 30 and that variousmodifications may be apparent. By way of non-limiting example, theprojecting structure 3060 may provide a sheltered region 3065 along atleast two of its sides. In some non-limiting examples, the projectingstructure 3060 may be omitted and the auxiliary electrode 2050 maycomprise a recessed portion that may define the sheltered region 3065.In some non-limiting examples, the auxiliary electrode 2050 and thedeposited layer 1030 may be disposed directly on a surface of thesubstrate 10, instead of the PDL 1640.

Selective Deposition of Optical Coating

In some non-limiting examples, a device (not shown), which in somenon-limiting examples may be an opto-electronic device, may comprise asubstrate 10, a patterning coating 210 and an optical coating. Thepatterning coating 210 may cover, in a lateral aspect, a first lateralportion 401 of the substrate 10. The optical coating may cover, in alateral aspect, a second lateral portion 402 of the substrate 10. Atleast a part of the patterning coating 210 may be substantially devoidof a closed coating 1040 of the optical coating.

In some non-limiting examples, the optical coating may be used tomodulate optical properties of EM radiation being transmitted, emitted,and/or absorbed by the device, including without limitation, plasmonmodes. By way of non-limiting example, the optical coating may be usedas an optical filter, index-matching coating, optical outcouplingcoating, scattering layer, diffraction grating, and/or parts thereof.

In some non-limiting examples, the optical coating may be used tomodulate at least one optical microcavity effect in the device by,without limitation, tuning the total optical path length, and/or therefractive index thereof. At least one optical property of the devicemay be affected by modulating at least one optical microcavity effectincluding without limitation, the output EM radiation, including withoutlimitation, an angular dependence of an intensity thereof, and/or awavelength shift thereof. In some non-limiting examples, the opticalcoating may be a non-electrical component, that is, the optical coatingmay not be configured to conduct, and/or transmit electrical currentduring normal device operations.

In some non-limiting examples, the optical coating may be formed of anydeposited material 1231, and/or may employ any mechanism of depositing adeposited layer 1030 as described herein.

Partition and Recess

Turning to FIG. 31 , there may be shown a cross-sectional view of anexample version 3100 of the device 1000. The device 3100 may comprise asubstrate 10 having an exposed layer surface 11. The substrate 10 maycomprise at least one TFT structure 1601. By way of non-limitingexample, the at least one TFT structure 1601 may be formed by depositingand patterning a series of thin films when fabricating the substrate 10,in some non-limiting examples, as described herein.

The device 3100 may comprise, in a lateral aspect, an emissive region610 having an associated lateral aspect 1610 and at least one adjacentnon-emissive region 1902, each having an associated lateral aspect 1620.The exposed layer surface 11 of the substrate 10 in the emissive region610 may be provided with a first electrode 1520, that may beelectrically coupled with the at least one TFT structure 1601. A PDL1640 may be provided on the exposed layer surface 11, such that the PDL1640 covers the exposed layer surface 11 as well as at least one edge,and/or perimeter of the first electrode 1520. The PDL 1640 may, in somenon-limiting examples, be provided in the lateral aspect 1620 of thenon-emissive region 1902. The PDL 1640 may define a valley-shapedconfiguration that may provide an opening that generally may correspondto the lateral aspect 1610 of the emissive region 610 through which alayer surface of the first electrode 1520 may be exposed. In somenon-limiting examples, the device 3100 may comprise a plurality of suchopenings defined by the PDLs 1640, each of which may correspond to a(sub-) pixel 2710/224 x region of the device 3100.

As shown, in some non-limiting examples, a partition 3121 may beprovided on the exposed layer surface 11 in the lateral aspect 1620 of anon-emissive region 1902 and, as described herein, may define asheltered region 3065, such as a recess 3122. In some non-limitingexamples, the recess 3122 may be formed by an edge of a lower section ofthe partition 3121 being recessed, staggered, and/or offset with respectto an edge of an upper section of the partition 3121 that may overlap,and/or project beyond the recess 3122.

In some non-limiting examples, the lateral aspect 1610 of the emissiveregion 610 may comprise at least one semiconducting layer 1530 disposedover the first electrode 1520, a second electrode 1540, disposed overthe at least one semiconducting layer 1530, and a patterning coating 210disposed over the second electrode 1540. In some non-limiting examples,the at least one semiconducting layer 1530, the second electrode 1540and the patterning coating 210 may extend laterally to cover at leastthe lateral aspect 1620 of a part of at least one adjacent non-emissiveregion 1902. In some non-limiting examples, as shown, the at least onesemiconducting layer 1530, the second electrode 1540 and the patterningcoating 210 may be disposed on at least a part of at least one PDL 1640and at least a part of the partition 3121. Thus, as shown, the lateralaspect 1610 of the emissive region 610, the lateral aspect 1620 of apart of at least one adjacent non-emissive region 1902, a part of atleast one PDL 1640, and at least a part of the partition 3121, togethermay make up a first portion 401, in which the second electrode 1540 maylie between the patterning coating 210 and the at least onesemiconducting layer 1530.

An auxiliary electrode 2050 may be disposed proximate to, and/or withinthe recess 3122 and a deposited layer 1030 may be arranged toelectrically couple the auxiliary electrode 2050 with the secondelectrode 1540. Thus as shown, in some non-limiting examples, the recess3122 may comprise a second portion 402, in which the deposited layer1030 is disposed on the exposed layer surface 11.

In some non-limiting examples, in depositing the deposited layer 1030,at least a part of the evaporated flux 1232 of the deposited material1231 may be directed at a non-normal angle relative to a lateral planeof the exposed layer surface 11. By way of non-limiting example, atleast a part of the evaporated flux 1232 may be incident on the device2200 at an angle of incidence that is, relative to such lateral plane ofthe exposed layer surface 11, no more than at least one of about: 90°,85°, 80°, 75°, 70°, 60°, or 50°. By directing an evaporated flux 1232 ofa deposited material 1231, including at least a part thereof incident ata non-normal angle, at least one exposed layer surface 11 of, and/or inthe recess 3122 may be exposed to such evaporated flux 1232.

In some non-limiting examples, a likelihood of such evaporated flux 1232being precluded from being incident onto at least one exposed layersurface 11 of, and/or in the recess 3122 due to the presence of thepartition 3121, may be reduced since at least a part of such evaporatedflux 1232 may be flowed at a non-normal angle of incidence.

In some non-limiting examples, at least a part of such evaporated flux1232 may be non-collimated. In some non-limiting examples, at least apart of such evaporated flux 1232 may be generated by an evaporationsource that is a point source, a linear source, and/or a surface source.

In some non-limiting examples, the device 3100 may be displaced duringdeposition of the deposited layer 1030. By way of non-limiting example,the device 3100, and/or the substrate 10 thereof, and/or any layer(s)deposited thereon, may be subjected to a displacement that is angular,in a lateral aspect, and/or in an aspect substantially parallel to thecross-sectional aspect.

In some non-limiting examples, the device 3100 may be rotated about anaxis that substantially normal to the lateral plane of the exposed layersurface 11 while being subjected to the evaporated flux 1232.

In some non-limiting examples, at least a part of such evaporated flux1232 may be directed toward the exposed layer surface 11 of the device3100 in a direction that is substantially normal to the lateral plane ofthe exposed layer surface 11.

Without wishing to be bound by a particular theory, it may be postulatedthat the deposited material 1231 may nevertheless be deposited withinthe recess 3122 due to lateral migration, and/or desorption of adatomsadsorbed onto the exposed layer surface 11 of the patterning coating210. In some non-limiting examples, it may be postulated that anyadatoms adsorbed onto the exposed layer surface 11 of the patterningcoating 210 may tend to migrate, and/or desorb from such exposed layersurface 11 due to unfavorable thermodynamic properties of the exposedlayer surface 11 for forming a stable nucleus. In some non-limitingexamples, it may be postulated that at least some of the adatomsmigrating, and/or desorbing off such exposed layer surface 11 may bere-deposited onto the surfaces in the recess 3122 to form the depositedlayer 1030.

In some non-limiting examples, the deposited layer 1030 may be formedsuch that the deposited layer 1030 may be electrically coupled with boththe auxiliary electrode 2050 and the second electrode 1540. In somenon-limiting examples, the deposited layer 1030 may be in physicalcontact with at least one of the auxiliary electrode 2050, and/or thesecond electrode 1540. In some non-limiting examples, an intermediatelayer may be present between the deposited layer 1030 and at least oneof the auxiliary electrode 2050, and/or the second electrode 1540.However, in such example, such intermediate layer may not substantiallypreclude the deposited layer 1030 from being electrically coupled withthe at least one of the auxiliary electrode 2050, and/or the secondelectrode 1540. In some non-limiting examples, such intermediate layermay be relatively thin and be such as to permit electrical couplingtherethrough. In some non-limiting examples, a sheet resistance of thedeposited layer 1030 may be no more than a sheet resistance of thesecond electrode 1540.

As shown in FIG. 31 , the recess 3122 may be substantially devoid of thesecond electrode 1540. In some non-limiting examples, during thedeposition of the second electrode 1540, the recess 3122 may be masked,by the partition 3121, such that the evaporated flux 1232 of thedeposited material 1231 for forming the second electrode 1540 may besubstantially precluded from being incident on at least one exposedlayer surface 11 of, and/or in, the recess 3122. In some non-limitingexamples, at least a part of the evaporated flux 1232 of the depositedmaterial 1231 for forming the second electrode 1540 may be incident onat least one exposed layer surface 11 of, and/or in, the recess 3122,such that the second electrode 1540 may extend to cover at least a partof the recess 3122.

In some non-limiting examples, the auxiliary electrode 2050, thedeposited layer 1030, and/or the partition 3121 may be selectivelyprovided in certain region(s) of a display panel 510. In somenon-limiting examples, any of these features may be provided at, and/orproximate to, at least one edge of such display panel for electricallycoupling at least one element of the frontplane 1510, including withoutlimitation, the second electrode 1540, to at least one element of thebackplane 1515. In some non-limiting examples, providing such featuresat, and/or proximate to, such edges may facilitate supplying anddistributing electrical current to the second electrode 1540 from anauxiliary electrode 2050 located at, and/or proximate to, such edges. Insome non-limiting examples, such configuration may facilitate reducing abezel size of the display panel.

In some non-limiting examples, the auxiliary electrode 2050, thedeposited layer 1030, and/or the partition 3121 may be omitted fromcertain regions(s) of such display panel 510. In some non-limitingexamples, such features may be omitted from parts of the display panel510, including without limitation, where a relatively high pixel densitymay be provided, other than at, and/or proximate to, at least one edgethereof.

Aperture in Non-Emissive Region

Turning now to FIG. 32A, there may be shown a cross-sectional view of anexample version 3200 _(a) of the device 1000. The device 3200 _(a) maydiffer from the device 3100 in that a pair of partitions 3121 in thenon-emissive region 1902 may be disposed in a facing arrangement todefine a sheltered region 3065, such as an aperture 3222, therebetween.As shown, in some non-limiting examples, at least one of the partitions3121 may function as a PDL 1640 that covers at least an edge of thefirst electrode 1520 and that defines at least one emissive region 610.In some non-limiting examples, at least one of the partitions 3121 maybe provided separately from a PDL 1640.

A sheltered region 3065, such as the recess 3122, may be defined by atleast one of the partitions 3121. In some non-limiting examples, therecess 3122 may be provided in a part of the aperture 3222 proximal tothe substrate 10. In some non-limiting examples, the aperture 3222 maybe substantially elliptical when viewed in plan. In some non-limitingexamples, the recess 3122 may be substantially annular when viewed inplan and surround the aperture 3222.

In some non-limiting examples, the recess 3122 may be substantiallydevoid of materials for forming each of the layers of a device stack3210, and/or of a residual device stack 3211.

In these figures, a device stack 3210 may be shown comprising the atleast one semiconducting layer 1530, the second electrode 1540 and thepatterning coating 210 deposited on an upper section of the partition3121.

In these figures, a residual device stack 3211 may be shown comprisingthe at least one semiconducting layer 1530, the second electrode 1540and the patterning coating 210 deposited on the substrate 10 beyond thepartition 3121 and recess 3122. From comparison with FIG. 31 , it may beseen that the residual device stack 3211 may, in some non-limitingexamples, correspond to the semiconductor layer 1530, second electrode1540 and the patterning coating 210 as it approaches the recess 3122 at,and/or proximate to, a lip of the partition 3121. In some non-limitingexamples, the residual device stack 3211 may be formed when an open maskand/or mask-free deposition process is used to deposit various materialsof the device stack 3210.

In some non-limiting examples, the residual device stack 3211 may bedisposed within the aperture 3222. In some non-limiting examples,evaporated materials for forming each of the layers of the device stack3210 may be deposited within the aperture 3222 to form the residualdevice stack 3211 therein.

In some non-limiting examples, the auxiliary electrode 2050 may bearranged such that at least a part thereof is disposed within the recess3122. As shown, in some non-limiting examples, the auxiliary electrode2050 may be arranged within the aperture 3222, such that the residualdevice stack 3211 is deposited onto a surface of the auxiliary electrode2050.

A deposited layer 1030 may be disposed within the aperture 3222 forelectrically coupling the second electrode 1540 with the auxiliaryelectrode 2050. By way of non-limiting example, at least a part of thedeposited layer 1030 may be disposed within the recess 3122.

Turning now to FIG. 32B, there may be shown a cross-sectional view of afurther example of the device 2300 _(b). As shown, the auxiliaryelectrode 2050 may be arranged to form at least a part of a side of thepartition 3121. As such, the auxiliary electrode 2050 may besubstantially annular, when viewed in plan view, and may surround theaperture 3222. As shown, in some non-limiting examples, the residualdevice stack 3211 may be deposited onto an exposed layer surface 11 ofthe substrate 10.

In some non-limiting examples, the partition 3121 may comprise, and/orbe formed by, an NPC 1420. By way of non-limiting example, the auxiliaryelectrode 2050 may act as an NPC 1420.

In some non-limiting examples, the NPC 1420 may be provided by thesecond electrode 1540, and/or a portion, layer, and/or material thereof.In some non-limiting examples, the second electrode 1540 may extendlaterally to cover the exposed layer surface 11 arranged in thesheltered region 3065. In some non-limiting examples, the secondelectrode 1540 may comprise a lower layer thereof and a second layerthereof, wherein the second layer thereof may be deposited on the lowerlayer thereof. In some non-limiting examples, the lower layer of thesecond electrode 1540 may comprise an oxide such as, without limitation,ITO, IZO, or ZnO. In some non-limiting examples, the upper layer of thesecond electrode 1540 may comprise a metal such as, without limitation,at least one of Ag, Mg, Mg:Ag, Yb/Ag, other alkali metals, and/or otheralkali earth metals.

In some non-limiting examples, the lower layer of the second electrode1540 may extend laterally to cover a surface of the sheltered region3065, such that it forms the NPC 1420. In some non-limiting examples, atleast one surface defining the sheltered region 3065 may be treated toform the NPC 1420. In some non-limiting examples, such NPC 1420 may beformed by chemical, and/or physical treatment, including withoutlimitation, subjecting the surface(s) of the sheltered region 3065 to aplasma, UV, and/or UV-ozone treatment.

Without wishing to be bound to any particular theory, it may bepostulated that such treatment may chemically, and/or physically altersuch surface(s) to modify at least one property thereof. By way ofnon-limiting example, such treatment of the surface(s) may increase aconcentration of C—O, and/or C—OH bonds on such surface(s), may increasea roughness of such surface(s), and/or may increase a concentration ofcertain species, and/or functional groups, including without limitation,halogens, nitrogen-containing functional groups, and/oroxygen-containing functional groups to thereafter act as an NPC 1420.

Diffraction Reduction

It has been discovered that, in some non-limiting examples, the at leastone EM signal 531 passing through the at least one signal transmissiveregion 620 may be impacted by a diffraction characteristic of adiffraction pattern imposed by a shape of the at least one signaltransmissive region 620.

At least in some non-limiting examples, a display panel 510 that causesat least one EM signal 531 to pass through the at least one signaltransmissive region 620 that is shaped to exhibit a distinctive andnon-uniform diffraction pattern, may interfere with the capture of animage and/or EM radiation pattern represented thereby.

By way of non-limiting example, such diffraction pattern may interferewith an ability to facilitate mitigating interference by suchdiffraction pattern, that is, to permit an under-display component 530to be able to accurately receive and process such image or pattern, evenwith the application of optical post-processing techniques, or to allowa viewer of such image and/or pattern through such display panel 510 todiscern information contained therein.

In some non-limiting examples, a distinctive and/or non-uniformdiffraction pattern may result from a shape of the at least one signaltransmissive region 620 that may cause distinct and/or angularlyseparated diffraction spikes in the diffraction pattern.

In some non-limiting examples, a first diffraction spike may bedistinguished from a second proximate diffraction spike by simpleobservation, such that a total number of diffraction spikes along a fullangular revolution may be counted. However, in some non-limitingexamples, especially where the number of diffraction spikes is large, itmay be more difficult to identify individual diffraction spikes. In suchcircumstances, the distortion effect of the resulting diffractionpattern may in fact facilitate mitigation of the interference causedthereby, since the distortion effect tends to be blurred and/ordistributed more evenly. Such blurring and/or more even distribution ofthe distortion effect may, in some non-limiting examples, be moreamenable to mitigation, including without limitation, by opticalpost-processing techniques, in order to recover the original imageand/or information contained therein.

In some non-limiting examples, an ability to facilitate mitigation ofthe interference caused by the diffraction pattern may increase as thenumber of diffraction spikes increases.

In some non-limiting examples, a distinctive and non-uniform diffractionpattern may result from a shape of the at least one signal transmissiveregion 620 that increase a length of a pattern boundary within thediffraction pattern between region(s) of high intensity of EM radiationand region(s) of low intensity of EM radiation as a function of apattern circumference of the diffraction pattern and/or that reduces aratio of the pattern circumference relative to the length of the patternboundary thereof.

Without wishing to be bound by any specific theory, it may be postulatedthat display panels x10 having closed boundaries of light transmissiveregions 620 defined by a corresponding signal transmissive region 620that are polygonal may exhibit a distinctive and non-uniform diffractionpattern t ha may adversely impact an ability to facilitate mitigation ofinterference caused by the diffraction pattern, relative to a displaypanel 510 having closed boundaries of light transmissive regions 620defined by a corresponding signal transmissive region 620 that isnon-polygonal.

In the present disclosure, the term “polygonal” may refer generally toshapes, figures, closed boundaries, and/or perimeters formed by a finitenumber of linear and/or straight segments and the term “non-polygonal”may refer generally to shapes, figures, closed boundaries, and/orperimeters that are not polygonal. By way of non-limiting example, aclosed boundary formed by a finite number of linear segments and atleast one non-linear or curved segment may be considered non-polygonal.

Without wishing to be bound by a particular theory, it may be postulatedthat when a closed boundary of a light transmissive region 620 definedby a corresponding signal transmissive region 620 comprises at least onenon-linear and/or curved segment, EM signals incident thereon andtransmitted therethrough may exhibit a less distinctive and/or moreuniform diffraction pattern that facilitates mitigation of interferencecaused by the diffraction pattern.

In some non-limiting examples, a display panel 510 having a closedboundary of the light transmissive regions 620 defined by acorresponding signal transmissive region x13 that is substantiallyelliptical and/or circular may further facilitate mitigation ofinterference caused by the diffraction pattern.

In some non-limiting examples, an signal transmissive region 620 may bedefined by a finite plurality of convex rounded segments. In somenon-limiting examples, at least some of these segments coincide at aconcave notch or peak.

Removal of Selective Coating

In some non-limiting examples, the patterning coating 210 may be removedafter deposition of the deposited layer 1030, such that at least a partof a previously exposed layer surface 11 of an underlying materialcovered by the patterning coating 210 may become exposed once again. Insome non-limiting examples, the patterning coating 210 may beselectively removed by etching, and/or dissolving the patterning coating210, and/or by employing plasma, and/or solvent processing techniquesthat do not substantially affect or erode the deposited layer 1030.

Turning now to FIG. 33A, there may be shown an example cross-sectionalview of an example version 3300 of the device 1000, at a depositionstage 3300 a, in which a patterning coating 210 may have beenselectively deposited on a first portion 401 of an exposed layer surface11 of an underlying material. In the figure, the underlying material maybe the substrate 10.

In FIG. 33B, the device 3300 may be shown at a deposition stage 3300 b,in which a deposited layer 1030 may be deposited on the exposed layersurface 11 of the underlying material, that is, on both the exposedlayer surface 11 of patterning coating 210 where the patterning coating210 may have been deposited during the stage 3300 a, as well as theexposed layer surface 11 of the substrate 10 where that patterningcoating 210 may not have been deposited during the stage 3300 a. Becauseof the nucleation-inhibiting properties of the first portion 401 wherethe patterning coating 210 may have been disposed, the deposited layer1030 disposed thereon may tend to not remain, resulting in a pattern ofselective deposition of the deposited layer 1030, that may correspond toa second portion 402, leaving the first portion 401 substantially devoidof the deposited layer 1030.

In FIG. 33C, the device 3300 may be shown at a deposition stage 3300 c,in which the patterning coating 210 may have been removed from the firstportion 401 of the exposed layer surface 11 of the substrate 10, suchthat the deposited layer 1030 deposited during the stage 3300 b mayremain on the substrate 10 and regions of the substrate 10 on which thepatterning coating 210 may have been deposited during the stage 3300 amay now be exposed or uncovered.

In some non-limiting examples, the removal of the patterning coating 210in the stage 3300 c may be effected by exposing the device 3300 to asolvent, and/or a plasma that reacts with, and/or etches away thepatterning coating 210 without substantially impacting the depositedlayer 1030.

Thin Film Formation

The formation of thin films during vapor deposition on an exposed layersurface 11 of an underlying layer may involve processes of nucleationand growth.

During initial stages of film formation, a sufficient number of vapormonomers 1232 (which in some non-limiting examples may be molecules,and/or atoms of a deposited material 1231 in vapor form 332) maytypically condense from a vapor phase to form initial nuclei on theexposed layer surface 11 presented of an underlying layer. As vapormonomers 1232 may impinge on such surface, a characteristic size, and/ordeposited density of these initial nuclei may increase to form smallparticle structures 121. Non-limiting examples of a dimension to whichsuch characteristic size refers may include a height, width, length,and/or diameter of such particle structure 121.

After reaching a saturation island density, adjacent particle structures121 may typically start to coalesce, increasing an averagecharacteristic size of such particle structures 121, while decreasing adeposited density thereof.

With continued vapor deposition of monomers 1232, coalescence ofadjacent particle structures 121 may continue until a substantiallyclosed coating 1040 may eventually be deposited on an exposed layersurface 11 of an underlying layer. The behaviour, including opticaleffects caused thereby, of such closed coatings 440 may be generallyrelatively uniform, consistent, and unsurprising.

There may be at least three basic growth modes for the formation of thinfilms, in some non-limiting examples, culminating in a closed coating1040: 1) island (Volmer-Weber), 2) layer-by-layer (Frank-van der Merwe),and 3) Stranski-Krastanov.

Island growth may typically occur when stale clusters of monomers 1232nucleate on an exposed layer surface 11 and grow to form discreteislands. This growth mode may occur when the interaction between themonomers 1232 is stronger than that between the monomers 1232 and thesurface.

The nucleation rate may describe how many nuclei of a given size (wherethe free energy does not push a cluster of such nuclei to either grow orshrink) (“critical nuclei”) may be formed on a surface per unit time.During initial stages of film formation, it may be unlikely that nucleiwill grow from direct impingement of monomers 1232 on the surface, sincethe deposited density of nuclei is low, and thus the nuclei may cover arelatively small fraction of the surface (e.g., there are largegaps/spaces between neighboring nuclei). Therefore, the rate at whichcritical nuclei may grow may typically depend on the rate at whichadatoms (e.g., adsorbed monomers 1232) on the surface migrate and attachto nearby nuclei.

An example of an energy profile of an adatom adsorbed onto an exposedlayer surface 11 of an underlying material is illustrated in FIG. 34 .Specifically, FIG. 34 may illustrate example qualitative energy profilescorresponding to: an adatom escaping from a local low energy site(3410); diffusion of the adatom on the exposed layer surface 11 (3420);and desorption of the adatom (3430).

In 3410, the local low energy site may be any site on the exposed layersurface 11 of an underlying layer, onto which an adatom will be at alower energy. Typically, the nucleation site may comprise a defect,and/or an anomaly on the exposed layer surface 11, including withoutlimitation, a ledge, a step edge, a chemical impurity, a bonding site,and/or a kink (“heterogeneity”).

Sites of substrate heterogeneity may increase an energy involved todesorb the adatom from the surface E_(des) 3431, leading to a higherdeposited density of nuclei observed at such sites. Also, impurities orcontamination on a surface may also increase E_(des) 3431, leading to ahigher deposited density of nuclei. For vapor deposition processes,conducted under high vacuum conditions, the type and deposited densityof contaminants on a surface may be affected by a vacuum pressure and acomposition of residual gases that make up that pressure.

Once the adatom is trapped at the local low energy site, there maytypically, in some non-limiting examples, be an energy barrier beforesurface diffusion takes place. Such energy barrier may be represented asΔE3411 in FIG. 34 . In some non-limiting examples, if the energy barrierΔE3411 to escape the local low energy site is sufficiently large, thesite may act as a nucleation site.

In 3420, the adatom may diffuse on the exposed layer surface 11. By wayof non-limiting example, in the case of localized absorbates, adatomsmay tend to oscillate near a minimum of the surface potential andmigrate to various neighboring sites until the adatom is eitherdesorbed, and/or is incorporated into growing islands 121 formed by acluster of adatoms, and/or a growing film. In FIG. 34 , the activationenergy associated with surface diffusion of adatoms may be representedas E_(s) 3411.

In 3430, the activation energy associated with desorption of the adatomfrom the surface may be represented as E_(des) 3431. Those havingordinary skill in the relevant art will appreciate that any adatoms thatare not desorbed may remain on the exposed layer surface 11. By way ofnon-limiting example, such adatoms may diffuse on the exposed layersurface 11, become part of a cluster of adatoms that form islands 121 onthe exposed layer surface 11, and/or be incorporated as part of agrowing film, and/or coating.

After adsorption of an adatom on a surface, the adatom may either desorbfrom the surface, or may migrate some distance on the surface beforeeither desorbing, interacting with other adatoms to form a smallcluster, or attaching to a growing nucleus. An average amount of timethat an adatom may remain on the surface after initial adsorption may begiven by:

$\begin{matrix}{\tau_{s} = {\frac{1}{v}{\exp\left( \frac{E_{des}}{kT} \right)}}} & ({TF1})\end{matrix}$

In the above equation:

v is a vibrational frequency of the adatom on the surface,

k is the Botzmann constant, and

T is temperature.

From Equation TF1 it may be noted that the lower the value of E_(des)3431, the easier it may be for the adatom to desorb from the surface,and hence the shorter the time the adatom may remain on the surface. Amean distance an adatom can diffuse may be given by,

$\begin{matrix}{X = {a_{0}{\exp\left( \frac{E_{des} - E_{s}}{2kT} \right)}}} & ({TF2})\end{matrix}$

where:

α₀ is a lattice constant.

For low values of E_(des) 3431, and/or high values of E_(s) 3421, theadatom may diffuse a shorter distance before desorbing, and hence may beless likely to attach to growing nuclei or interact with another adatomor cluster of adatoms.

During initial stages of formation of a deposited layer of particlestructures 121, adsorbed adatoms may interact to form particlestructures 121, with a critical concentration of particle structures 121per unit area being given by,

$\begin{matrix}{\frac{N_{i}}{n_{0}} = {{❘\frac{N_{1}}{n_{0}}❘}^{i}{\exp\left( \frac{E_{i}}{kT} \right)}}} & ({TF3})\end{matrix}$

where:

E_(i) is an energy involved to dissociate a critical cluster containingi adatoms into separate adatoms,

n₀ is a total deposited density of adsorption sites, and

N₁ is a monomer deposited density given by:

N ₁ ={dot over (R)}τ _(s)  (TF4)

where:

{dot over (R)} is a vapor impingement rate.

Typically, i may depend on a crystal structure of a material beingdeposited and may determine a critical size of particle structures 121to form a stable nucleus.

A critical monomer supply rate for growing particle structures 121 maybe given by the rate of vapor impingement and an average area over whichan adatom can diffuse before desorbing:

$\begin{matrix}{{\overset{˙}{R}X^{2}} = {\alpha_{0}^{2}{\exp\left( \frac{E_{des} - E_{s}}{kT} \right)}}} & ({TF5})\end{matrix}$

The critical nucleation rate may thus be given by the combination of theabove equations:

$\begin{matrix}{{\overset{˙}{N}}_{i} = {\overset{˙}{R}\alpha_{0}^{2}{n_{0}\left( \frac{R}{vn_{0}} \right)}^{i}{\exp\left( \frac{{\left( {i + 1} \right)E_{des}} - E_{s} + E_{i}}{kT} \right)}}} & ({TF6})\end{matrix}$

From the above equation, it may be noted that the critical nucleationrate may be suppressed for surfaces that have a low desorption energyfor adsorbed adatoms, a high activation energy for diffusion of anadatom, are at high temperatures, and/or are subjected to vaporimpingement rates.

Under high vacuum conditions, a flux 1232 of molecules that may impingeon a surface (per cm²-sec) may be given by:

$\begin{matrix}{\phi = {{3.5}13 \times 10^{22}\frac{P}{MT}}} & ({TF7})\end{matrix}$

where:

P is pressure, and

M is molecular weight.

Therefore, a higher partial pressure of a reactive gas, such as H₂O, maylead to a higher deposited density of contamination on a surface duringvapor deposition, leading to an increase in E_(des) 3431 and hence ahigher deposited density of nuclei.

In the present disclosure, “nucleation-inhibiting” may refer to acoating, material, and/or a layer thereof, that may have a surface thatexhibits an initial sticking probability against deposition of adeposited material 1231 thereon, that may be close to 0, includingwithout limitation, less than about 0.3, such that the deposition of thedeposited material 1231 on such surface may be inhibited.

In the present disclosure, “nucleation-promoting” may refer to acoating, material, and/or a layer thereof, that has a surface thatexhibits an initial sticking probability against deposition of adeposited material 1231 thereon, that may be close to 1, includingwithout limitation, greater than about 0.7, such that the deposition ofthe deposited material 1231 on such surface may be facilitated.

Without wishing to be bound by a particular theory, it may be postulatedthat the shapes and sizes of such nuclei and the subsequent growth ofsuch nuclei into islands 121 and thereafter into a thin film may dependupon various factors, including without limitation, interfacial tensionsbetween the vapor, the surface, and/or the condensed film nuclei.

One measure of a nucleation-inhibiting, and/or nucleation-promotingproperty of a surface may be the initial sticking probability of thesurface against the deposition of a given deposited material 1231.

In some non-limiting examples, the sticking probability S may be givenby:

$\begin{matrix}{S = \frac{N_{ads}}{N_{total}}} & ({TF8})\end{matrix}$

where:

N_(ads) is a number of adatoms that remain on an exposed layer surface11 (that is, are incorporated into a film), and

N_(total) is a total number of impinging monomers on the surface.

A sticking probability S equal to 1 may indicate that all monomers 1232that impinge on the surface are adsorbed and subsequently incorporatedinto a growing film. A sticking probability S equal to 0 may indicatethat all monomers 1232 that impinge on the surface are desorbed andsubsequently no film may be formed on the surface.

A sticking probability S of a deposited material 1231 on varioussurfaces may be evaluated using various techniques of measuring thesticking probability S, including without limitation, a dual quartzcrystal microbalance (QCM) technique as described by Walker et al., J.Phys. Chem. C 2007, 111, 765 (2006).

As the deposited density of a deposited material 1231 may increase(e.g., increasing average film thickness), a sticking probability S maychange.

An initial sticking probability S₀ may therefore be specified as asticking probability S of a surface prior to the formation of anysignificant number of critical nuclei. One measure of an initialsticking probability S₀ may involve a sticking probability S of asurface against the deposition of a deposited material 1231 during aninitial stage of deposition thereof, where an average film thickness ofthe deposited material 1231 across the surface is at or below athreshold value. In the description of some non-limiting examples athreshold value for an initial sticking probability may be specified as,by way of non-limiting example, 1 nm. An average sticking probability Smay then be given by:

S=S ₀(1−A _(nuc))+S _(nuc)(A _(nuc))  (TF9)

where:

S_(nuc) is a sticking probability S of an area covered by particlestructures 121, and

A_(nuc) is a percentage of an area of a substrate surface covered byparticle structures 121.

By way of non-limiting example, a low initial sticking probability mayincrease with increasing average film thickness. This may be understoodbased on a difference in sticking probability between an area of anexposed layer surface 11 with no particle structures 121, by way ofnon-limiting example, a bare substrate 10, and an area with a highdeposited density. By way of non-limiting example, a monomer 1232 thatmay impinge on a surface of a particle structure 121 may have a stickingprobability that may approach 1.

Based on the energy profiles 3410, 3420, 3430 shown in FIG. 34 , it maybe postulated that materials that exhibit relatively low activationenergy for desorption (E_(des) 3431), and/or relatively high activationenergy for surface diffusion (E_(s) 3421), may be deposited as apatterning coating 210, and may be suitable for use in variousapplications.

Without wishing to be bound by a particular theory, it may be postulatedthat, in some non-limiting examples, the relationship between variousinterfacial tensions present during nucleation and growth may bedictated according to Young's equation in capillarity theory:

γ_(sv)=γ_(fs)+γ_(vf) cos θ  (TF10)

where:

γ_(sv) (FIG. 35 ) corresponds to the interfacial tension between thesubstrate 10 and vapor 332,

γ_(fs) (FIG. 35 ) corresponds to the interfacial tension between thedeposited material 1231 and the substrate 10,

γ_(vf) (FIG. 35 ) corresponds to the interfacial tension between thevapor 332 and the film, and

θ is the film nucleus contact angle.

FIG. 35 may illustrate the relationship between the various parametersrepresented in this equation.

On the basis of Young's equation (Equation (TF10)), it may be derivedthat, for island growth, the film nucleus contact angle may exceed 0 andtherefore: γ_(sv)<γ_(fs)+γ_(vf).

For layer growth, where the deposited material 1231 may “wet” thesubstrate 10, the nucleus contact angle θ may be equal to 0, andtherefore: γ_(sv)=γ_(fs)+γ_(vf).

For Stranski-Krastanov growth, where the strain energy per unit area ofthe film overgrowth may be large with respect to the interfacial tensionbetween the vapor 332 and the deposited material 1231:γ_(sv)>γ_(fs)+γ_(vf).

Without wishing to be bound by any particular theory, it may bepostulated that the nucleation and growth mode of a deposited material1231 at an interface between the patterning coating 210 and the exposedlayer surface 11 of the substrate 10, may follow the island growthmodel, where θ>0.

Particularly in cases where the patterning coating 210 may exhibit arelatively low initial sticking probability (in some non-limitingexamples, under the conditions identified in the dual QCM techniquedescribed by Walker et. al) against deposition of the deposited material1231, there may be a relatively high thin film contact angle of thedeposited material 1231.

On the contrary, when a deposited material 1231 may be selectivelydeposited on an exposed layer surface 11 without the use of a patterningcoating 210, by way of non-limiting example, by employing a shadow mask1115, the nucleation and growth mode of such deposited material 1231 maydiffer. In particular, it has been observed that a coating formed usinga shadow mask 1115 patterning process may, at least in some non-limitingexamples, exhibit relatively low thin film contact angle of less thanabout 10°.

It has now been found, somewhat surprisingly, that in some non-limitingexamples, a patterning coating 210 (and/or the patterning material 1111of which it is comprised) may exhibit a relatively low critical surfacetension.

Those having ordinary skill in the relevant art will appreciate that a“surface energy” of a coating, layer, and/or a material constitutingsuch coating, and/or layer, may generally correspond to a criticalsurface tension of the coating, layer, and/or material. According tosome models of surface energy, the critical surface tension of a surfacemay correspond substantially to the surface energy of such surface.

Generally, a material with a low surface energy may exhibit lowintermolecular forces. Generally, a material with low intermolecularforces may readily crystallize or undergo other phase transformation ata lower temperature in comparison to another material with highintermolecular forces. In at least some applications, a material thatmay readily crystallize or undergo other phase transformations atrelatively low temperatures may be detrimental to the long-termperformance, stability, reliability, and/or lifetime of the device.

Without wishing to be bound by a particular theory, it may be postulatedthat certain low energy surfaces may exhibit relatively low initialsticking probabilities and may thus be suitable for forming thepatterning coating 210.

Without wishing to be bound by any particular theory, it may bepostulated that, especially for low surface energy surfaces, thecritical surface tension may be positively correlated with the surfaceenergy. By way of non-limiting example, a surface exhibiting arelatively low critical surface tension may also exhibit a relativelylow surface energy, and a surface exhibiting a relatively high criticalsurface tension may also exhibit a relatively high surface energy.

In reference to Young's equation (Equation (TF10)), a lower surfaceenergy may result in a greater contact angle, while also lowering theγ_(sv), thus enhancing the likelihood of such surface having lowwettability and low initial sticking probability with respect to thedeposited material 1231.

The critical surface tension values, in various non-limiting examples,herein may correspond to such values measured at around normaltemperature and pressure (NTP), which in some non-limiting examples, maycorrespond to a temperature of 20° C., and an absolute pressure of 1atm. In some non-limiting examples, the critical surface tension of asurface may be determined according to the Zisman method, as furtherdetailed in Zisman, W. A., “Advances in Chemistry” 43 (1964), p. 1-51.

In some non-limiting examples, the exposed layer surface 11 of thepatterning coating 210 may exhibit a critical surface tension of no morethan at least one of about: 20 dynes/cm, 19 dynes/cm, 18 dynes/cm, 17dynes/cm, 16 dynes/cm, 15 dynes/cm, 13 dynes/cm, 12 dynes/cm, or 11dynes/cm.

In some non-limiting examples, the exposed layer surface 11 of thepatterning coating 210 may exhibit a critical surface tension of atleast one of at least about: 6 dynes/cm, 7 dynes/cm, 8 dynes/cm, 9dynes/cm, and 10 dynes/cm.

Those having ordinary skill in the relevant art will appreciate thatvarious methods and theories for determining the surface energy of asolid may be known. By way of non-limiting example, the surface energymay be calculated, and/or derived based on a series of measurements ofcontact angle, in which various liquids are brought into contact with asurface of a solid to measure the contact angle between the liquid-vaporinterface and the surface. In some non-limiting examples, the surfaceenergy of a solid surface may be equal to the surface tension of aliquid with the highest surface tension that completely wets thesurface. By way of non-limiting example, a Zisman plot may be used todetermine the highest surface tension value that would result in acontact angle of 0° with the surface. According to some theories ofsurface energy, various types of interactions between solid surfaces andliquids may be considered in determining the surface energy of thesolid. By way of non-limiting example, according to some theories,including without limitation, the Owens/Wendt theory, and/or Fowkes'theory, the surface energy may comprise a dispersive component and anon-dispersive or “polar” component.

Without wishing to be bound by a particular theory, it may be postulatedthat, in some non-limiting examples, the contact angle of a coating ofdeposited material 1231 may be determined, based at least partially onthe properties (including, without limitation, initial stickingprobability) of the patterning coating 210 onto which the depositedmaterial 1231 is deposited. Accordingly, patterning materials 1111 thatallow selective deposition of deposited materials 1231 exhibitingrelatively high contact angles may provide some benefit.

Those having ordinary skill in the relevant art will appreciate thatvarious methods may be used to measure a contact angle θ_(c) includingwithout limitation, the static, and/or dynamic sessile drop method andthe pendant drop method.

In some non-limiting examples, the activation energy for desorption(E_(des) 3431) (in some non-limiting examples, at a temperature T ofabout 300K) may be no more than at least one of about: 2 times, 1.5times, 1.3 times, 1.2 times, 1.0 times, 0.8 times, or 0.5 times, thethermal energy. In some non-limiting examples, the activation energy forsurface diffusion (E_(s) 3421) (in some non-limiting examples, at atemperature of about 300K) may exceed at least one of about: 1.0 times,1.5 times, 1.8 times, 2 times, 3 times, 5 times, 7 times, or 10 timesthe thermal energy.

Without wishing to be bound by a particular theory, it may be postulatedthat, during thin film nucleation and growth of a deposited material1231 at, and/or near an interface between the exposed layer surface 11of the underlying layer and the patterning coating 210, a relativelyhigh contact angle between the edge of the deposited material 1231 andthe underlying layer may be observed due to the inhibition of nucleationof the solid surface of the deposited material 1231 by the patterningcoating 210. Such nucleation inhibiting property may be driven byminimization of surface energy between the underlying layer, thin filmvapor and the patterning coating 210.

One measure of a nucleation-inhibiting, and/or nucleation-promotingproperty of a surface may be an initial deposition rate of a given(electrically conductive) deposited material 1231, on the surface,relative to an initial deposition rate of the same deposited material1231 on a reference surface, where both surfaces are subjected to,and/or exposed to an evaporation flux of the deposited material 1231.

Definitions

In some non-limiting examples, the opto-electronic device may be anelectro-luminescent device. In some non-limiting examples, theelectro-luminescent device may be an organic light-emitting diode (OLED)device. In some non-limiting examples, the electro-luminescent devicemay be part of an electronic device. By way of non-limiting example, theelectro-luminescent device may be an OLED lighting panel or module,and/or an OLED display or module of a computing device, such as asmartphone, a tablet, a laptop, an e-reader, and/or of some otherelectronic device such as a monitor, and/or a television set.

In some non-limiting examples, the opto-electronic device may be anorganic photo-voltaic (OPV) device that converts photons intoelectricity. In some non-limiting examples, the opto-electronic devicemay be an electro-luminescent quantum dot (QD) device.

In the present disclosure, unless specifically indicated to thecontrary, reference will be made to OLED devices, with the understandingthat such disclosure could, in some examples, equally be made applicableto other opto-electronic devices, including without limitation, an OPV,and/or QD device, in a manner apparent to those having ordinary skill inthe relevant art.

The structure of such devices may be described from each of two aspects,namely from a cross-sectional aspect, and/or from a lateral (plan view)aspect.

In the present disclosure, a directional convention may be followed,extending substantially normally to the lateral aspect described above,in which the substrate may be the “bottom” of the device, and the layersmay be disposed on “top” of the substrate. Following such convention,the second electrode may be at the top of the device shown, even if (asmay be the case in some examples, including without limitation, during amanufacturing process, in which at least one layers may be introduced bymeans of a vapor deposition process), the substrate may be physicallyinverted, such that the top surface, in which one of the layers, suchas, without limitation, the first electrode, may be disposed, may bephysically below the substrate, to allow the deposition material (notshown) to move upward and be deposited upon the top surface thereof as athin film.

In the context of introducing the cross-sectional aspect herein, thecomponents of such devices may be shown in substantially planar lateralstrata. Those having ordinary skill in the relevant art will appreciatethat such substantially planar representation may be for purposes ofillustration only, and that across a lateral extent of such a device,there may be localized substantially planar strata of differentthicknesses and dimension, including, in some non-limiting examples, thesubstantially complete absence of a layer, and/or layer(s) separated bynon-planar transition regions (including lateral gaps and evendiscontinuities). Thus, while for illustrative purposes, the device maybe shown below in its cross-sectional aspect as a substantiallystratified structure, in the plan view aspect discussed below, suchdevice may illustrate a diverse topography to define features, each ofwhich may substantially exhibit the stratified profile discussed in thecross-sectional aspect.

In the present disclosure, the terms “layer” and “strata” may be usedinterchangeably to refer to similar concepts.

The thickness of each layer shown in the figures may be illustrativeonly and not necessarily representative of a thickness relative toanother layer.

For purposes of simplicity of description, in the present disclosure, acombination of a plurality of elements in a single layer may be denotedby a colon “:”, while a plurality of (combination(s) of) elementscomprising a plurality of layers in a multi-layer coating may be denotedby separating two such layers by a slash “/”. In some non-limitingexamples, the layer after the slash may be deposited after, and/or onthe layer preceding the slash.

For purposes of illustration, an exposed layer surface of an underlyingmaterial, onto which a coating, layer, and/or material may be deposited,may be understood to be a surface of such underlying material that maybe presented for deposition of the coating, layer, and/or materialthereon, at the time of deposition.

Those having ordinary skill in the relevant art will appreciate thatwhen a component, a layer, a region, and/or a portion thereof, isreferred to as being “formed”, “disposed”, and/or “deposited” on, and/orover another underlying material, component, layer, region, and/orportion, such formation, disposition, and/or deposition may be directly,and/or indirectly on an exposed layer surface (at the time of suchformation, disposition, and/or deposition) of such underlying material,component, layer, region, and/or portion, with the potential ofintervening material(s), component(s), layer(s), region(s), and/orportion(s) therebetween.

In the present disclosure, the terms “overlap”, and/or “overlapping” mayrefer generally to a plurality of layers, and/or structures arranged tointersect a cross-sectional axis extending substantially normally awayfrom a surface onto which such layers, and/or structures may bedisposed.

While the present disclosure discusses thin film formation, in referenceto at least one layer or coating, in terms of vapor deposition, thosehaving ordinary skill in the relevant art will appreciate that, in somenon-limiting examples, various components of the device may beselectively deposited using a wide variety of techniques, includingwithout limitation, evaporation (including without limitation, thermalevaporation, and/or electron beam evaporation), photolithography,printing (including without limitation, ink jet, and/or vapor jetprinting, reel-to-reel printing, and/or micro-contact transferprinting), PVD (including without limitation, sputtering), chemicalvapor deposition (CVD) (including without limitation, plasma-enhancedCVD (PECVD), and/or organic vapor phase deposition (OVPD)), laserannealing, laser-induced thermal imaging (LITI) patterning, atomic-layerdeposition (ALD), coating (including without limitation, spin-coating,d₁ coating, line coating, and/or spray coating), and/or combinationsthereof (collectively “deposition process”).

Some processes may be used in combination with a shadow mask, which may,in some non-limiting examples, may be an open mask, and/or fine metalmask (FMM), during deposition of any of various layers, and/or coatingsto achieve various patterns by masking, and/or precluding deposition ofa deposited material on certain parts of a surface of an underlyingmaterial exposed thereto.

In the present disclosure, the terms “evaporation”, and/or “sublimation”may be used interchangeably to refer generally to deposition processesin which a source material is converted into a vapor, including withoutlimitation, by heating, to be deposited onto a target surface in,without limitation, a solid state. As will be understood, an evaporationdeposition process may be a type of PVD process where at least onesource material is evaporated, and/or sublimed under a low pressure(including without limitation, a vacuum) environment to form vapormonomers, and deposited on a target surface through de-sublimation ofthe at least one evaporated source material. A variety of differentevaporation sources may be used for heating a source material, and, assuch, it will be appreciated by those having ordinary skill in therelevant art, that the source material may be heated in various ways. Byway of non-limiting example, the source material may be heated by anelectric filament, electron beam, inductive heating, and/or by resistiveheating. In some non-limiting examples, the source material may beloaded into a heated crucible, a heated boat, a Knudsen cell (which maybe an effusion evaporator source), and/or any other type of evaporationsource.

In some non-limiting examples, a deposition source material may be amixture. In some non-limiting examples, at least one component of amixture of a deposition source material may not be deposited during thedeposition process (or, in some non-limiting examples, be deposited in arelatively small amount compared to other components of such mixture).

In the present disclosure, a reference to a layer thickness, a filmthickness, and/or an average layer, and/or film thickness, of amaterial, irrespective of the mechanism of deposition thereof, may referto an amount of the material deposited on a target exposed layersurface, which corresponds to an amount of the material to cover thetarget surface with a uniformly thick layer of the material having thereferenced layer thickness. By way of non-limiting example, depositing alayer thickness of 10 nm of material may indicate that an amount of thematerial deposited on the surface may correspond to an amount of thematerial to form a uniformly thick layer of the material that may be 10nm thick. It will be appreciated that, having regard to the mechanism bywhich thin films are formed discussed above, by way of non-limitingexample, due to possible stacking or clustering of monomers, an actualthickness of the deposited material may be non-uniform. By way ofnon-limiting example, depositing a layer thickness of 10 nm may yieldsome parts of the deposited material 1231 having an actual thicknessgreater than 10 nm, or other parts of the deposited material 1231 havingan actual thickness of no more than 10 nm. A certain layer thickness ofa material deposited on a surface may thus correspond, in somenon-limiting examples, to an average thickness of the deposited materialacross the target surface.

In the present disclosure, a reference to a reference layer thicknessmay refer to a layer thickness of the deposited material (such as Mg),that may be deposited on a reference surface exhibiting a high initialsticking probability or initial sticking coefficient (that is, a surfacehaving an initial sticking probability that is about, and/or close to1.0). The reference layer thickness may not indicate an actual thicknessof the deposited material deposited on a target surface (such as,without limitation, a surface of a patterning coating). Rather, thereference layer thickness may refer to a layer thickness of thedeposited material that would be deposited on a reference surface, insome non-limiting examples, a surface of a quartz crystal, positionedinside a deposition chamber for monitoring a deposition rate and thereference layer thickness, upon subjecting the target surface and thereference surface to identical vapor flux 1232 of the deposited materialfor the same deposition period. Those having ordinary skill in therelevant art will appreciate that in the event that the target surfaceand the reference surface are not subjected to identical vapor fluxsimultaneously during deposition, an appropriate tooling factor may beused to determine, and/or to monitor the reference layer thickness.

In the present disclosure, a reference deposition rate may refer to arate at which a layer of the deposited material would grow on thereference surface, if it were identically positioned and configuredwithin a deposition chamber as the sample surface.

In the present disclosure, a reference to depositing a number X ofmonolayers of material may refer to depositing an amount of the materialto cover a given area of an exposed layer surface with X single layer(s)of constituent monomers of the material, such as, without limitation, ina closed coating.

In the present disclosure, a reference to depositing a fraction of amonolayer of a material may refer to depositing an amount of thematerial to cover such fraction of a given area of an exposed layersurface with a single layer of constituent monomers of the material.Those having ordinary skill in the relevant art will appreciate that dueto, by way of non-limiting example, possible stacking, and/or clusteringof monomers, an actual local thickness of a deposited material across agiven area of a surface may be non-uniform. By way of non-limitingexample, depositing 1 monolayer of a material may result in some localregions of the given area of the surface being uncovered by thematerial, while other local regions of the given area of the surface mayhave multiple atomic, and/or molecular layers deposited thereon.

In the present disclosure a target surface (and/or target region(s)thereof) may be considered to be “substantially devoid of”,“substantially free of”, and/or “substantially uncovered by” a materialif there may be a substantial absence of the material on the targetsurface as determined by any suitable determination mechanism.

In the present disclosure, the terms “sticking probability” and“sticking coefficient” may be used interchangeably.

In the present disclosure, the term “nucleation” may reference anucleation stage of a thin film formation process, in which monomers ina vapor phase condense onto a surface to form nuclei.

In the present disclosure, in some non-limiting examples, as the contextdictates, the terms “patterning coating” and “patterning material” maybe used interchangeably to refer to similar concepts, and references toa patterning coating herein, in the context of being selectivelydeposited to pattern a deposited layer may, in some non-limitingexamples, be applicable to a patterning material in the context ofselective deposition thereof to pattern a deposited material, and/or anelectrode coating material.

Similarly, in some non-limiting examples, as the context dictates, theterm “patterning coating” and “patterning material” may be usedinterchangeably to refer to similar concepts, and reference to an NPCherein, in the context of being selectively deposited to pattern adeposited layer may, in some non-limiting examples, be applicable to anNPC in the context of selective deposition thereof to pattern adeposited material, and/or an electrode coating.

While a patterning material may be either nucleation-inhibiting ornucleation-promoting, in the present disclosure, unless the contextdictates otherwise, a reference herein to a patterning material isintended to be a reference to an NIC.

In some non-limiting examples, reference to a patterning coating maysignify a coating having a specific composition as described herein.

In the present disclosure, the terms “deposited layer”, “conductivecoating”, and “electrode coating” may be used interchangeably to referto similar concepts and references to a deposited layer herein, in thecontext of being patterned by selective deposition of a patterningcoating, and/or an NPC may, in some non-limiting examples, be applicableto a deposited layer in the context of being patterned by selectivedeposition of a patterning material. In some non-limiting examples,reference to an electrode coating may signify a coating having aspecific composition as described herein. Similarly, in the presentdisclosure, the terms “deposited layer material”, “deposited material”,“conductive coating material”, and “electrode coating material” may beused interchangeably to refer to similar concepts and references to adeposited material herein.

In the present disclosure, it will be appreciated by those havingordinary skill in the relevant art that an organic material maycomprise, without limitation, a wide variety of organic molecules,and/or organic polymers. Further, it will be appreciated by those havingordinary skill in the relevant art that organic materials that are dopedwith various inorganic substances, including without limitation,elements, and/or inorganic compounds, may still be considered organicmaterials. Still further, it will be appreciated by those havingordinary skill in the relevant art that various organic materials may beused, and that the processes described herein are generally applicableto an entire range of such organic materials. Still further, it will beappreciated by those having ordinary skill in the relevant art thatorganic materials that contain metals, and/or other organic elements,may still be considered as organic materials. Still further, it will beappreciated by those having ordinary skill in the relevant art thatvarious organic materials may be molecules, oligomers, and/or polymers.

As used herein, an organic-inorganic hybrid material may generally referto a material that comprises both an organic component and an inorganiccomponent. In some non-limiting examples, such organic-inorganic hybridmaterial may comprise an organic-inorganic hybrid compound thatcomprises an organic moiety and an inorganic moiety. Non-limitingexamples of such organic-inorganic hybrid compounds include those inwhich an inorganic scaffold is functionalized with at least one organicfunctional group. Non-limiting examples of such organic-inorganic hybridmaterials include those comprising at least one of: a siloxane group, asilsesquioxane group, a polyhedral oligomeric silsesquioxane (POSS)group, a phosphazene group, and a metal complex.

In the present disclosure, a semiconductor material may be described asa material that generally exhibits a band gap. In some non-limitingexamples, the band gap may be formed between a highest occupiedmolecular orbital (HOMO) and a lowest unoccupied molecular orbital(LUMO) of the semiconductor material. Semiconductor materials thusgenerally exhibit electrical conductivity that is no more than that of aconductive material (including without limitation, a metal), but that isgreater than that of an insulating material (including withoutlimitation, a glass). In some non-limiting examples, the semiconductormaterial may comprise an organic semiconductor material. In somenon-limiting examples, the semiconductor material may comprise aninorganic semiconductor material.

As used herein, an oligomer may generally refer to a material whichincludes at least two monomer units or monomers. As would be appreciatedby a person skilled in the art, an oligomer may differ from a polymer inat least one aspect, including but not limited to: (1) the number ofmonomer units contained therein; (2) the molecular weight; and (3) othermaterial properties, and/or characteristics. By way of non-limitingexample, further description of polymers and oligomers may be found inNaka K. (2014) Monomers, Oligomers, Polymers, and Macromolecules(Overview), and in Kobayashi S., Mullen K. (eds.) Encyclopedia ofPolymeric Nanomaterials, Springer, Berlin, Heidelberg.

An oligomer or a polymer may generally include monomer units that may bechemically bonded together to form a molecule. Such monomer units may besubstantially identical to one another such that the molecule isprimarily formed by repeating monomer units, or the molecule may includeplurality different monomer units. Additionally, the molecule mayinclude at least one terminal unit, which may be different from themonomer units of the molecule. An oligomer or a polymer may be linear,branched, cyclic, cyclo-linear, and/or cross-linked. An oligomer or apolymer may include a plurality of different monomer units which arearranged in a repeating pattern, and/or in alternating blocks ofdifferent monomer units.

In the present disclosure, the term “semiconducting layer(s)” may beused interchangeably with “organic layer(s)” since the layers in an OLEDdevice may in some non-limiting examples, may comprise organicsemiconducting materials.

In the present disclosure, an inorganic substance may refer to asubstance that primarily includes an inorganic material. In the presentdisclosure, an inorganic material may comprise any material that is notconsidered to be an organic material, including without limitation,metals, glasses, and/or minerals.

In the present disclosure, the terms “EM radiation”, “photon”, and“light” may be used interchangeably to refer to similar concepts. In thepresent disclosure, EM radiation may have a wavelength that lies in thevisible spectrum, in the infrared (IR) region (IR spectrum), near IRregion (NIR spectrum), ultraviolet (UV) region (UV spectrum), and/or UVAregion (UVA spectrum) (which may correspond to a wavelength rangebetween about 315-400 nm) thereof.

In the present disclosure, the term “visible spectrum” as used herein,generally refers to at least one wavelength in the visible part of theEM spectrum.

As would be appreciated by those having ordinary skill in the relevantart, such visible part may correspond to any wavelength between about380-740 nm. In general, electro-luminescent devices may be configured toemit, and/or transmit EM radiation having wavelengths in a range ofbetween about 425-725 nm, and more specifically, in some non-limitingexamples, EM radiation having peak emission wavelengths of 456 nm, 528nm, and 624 nm, corresponding to B(lue), G(reen), and R(ed) sub-pixels,respectively. Accordingly, in the context of such electro-luminescentdevices, the visible part may refer to any wavelength between about425-725 nm, or between about 456-624 nm. EM radiation having awavelength in the visible spectrum may, in some non-limiting examples,also be referred to as “visible light” herein.

In the present disclosure, the term “emission spectrum” as used herein,generally refers to an electroluminescence spectrum of light emitted byan opto-electronic device. By way of non-limiting example, an emissionspectrum may be detected using an optical instrument, such as, by way ofnon-limiting example, a spectrophotometer, which may measure anintensity of EM radiation across a wavelength range.

In the present disclosure, the term “onset wavelength”, as used herein,may generally refer to a lowest wavelength at which an emission isdetected within an emission spectrum.

In the present disclosure, the term “peak wavelength”, as used herein,may generally refer to a wavelength at which a maximum luminousintensity is detected within an emission spectrum.

In some non-limiting examples, the onset wavelength may be less than thepeak wavelength. In some non-limiting examples, the onset wavelength)λ_(onset) may correspond to a wavelength at which a luminous intensityis no more than at least one of about: 10%, 5%, 3%, 1%, 0.5%, 0.1%, or0.01%, of the luminous intensity at the peak wavelength.

In some non-limiting examples, an emission spectrum that lies in theR(ed) part of the visible spectrum may be characterized by a peakwavelength that may lie in a wavelength range of about 600-640 nm and insome non-limiting examples, may be substantially about 620 nm.

In some non-limiting examples, an emission spectrum that lies in theG(reen) part of the visible spectrum may be characterized by a peakwavelength that may lie in a wavelength range of about 510-540 nm and insome non-limiting examples, may be substantially about 530 nm.

In some non-limiting examples, an emission spectrum that lies in theB(lue) part of the visible spectrum may be characterized by a peakwavelength Ami that may lie in a wavelength range of about 450-460 nmand in some non-limiting examples, may be substantially about 455 nm.

In the present disclosure, the term “IR signal” as used herein, maygenerally refer to EM radiation having a wavelength in an IR subset (IRspectrum) of the EM spectrum. An IR signal may, in some non-limitingexamples, have a wavelength corresponding to a near-infrared (NIR)subset (NIR spectrum) thereof. By way of non-limiting example, an NIRsignal may have a wavelength of at least one of between about: 750-1400nm, 750-1300 nm, 800-1300 nm, 800-1200 nm, 850-1300 nm, or 900-1300 nm.

In the present disclosure, the term “absorption spectrum”, as usedherein, may generally refer to a wavelength (sub-)range of the EMspectrum over which absorption may be concentrated.

In the present disclosure, the terms “absorption edge”, “absorptiondiscontinuity”, and/or “absorption limit” as used herein, may generallyrefer to a sharp discontinuity in the absorption spectrum of asubstance. In some non-limiting examples, an absorption edge may tend tooccur at wavelengths where the energy of absorbed EM radiation maycorrespond to an electronic transition, and/or ionization potential.

In the present disclosure, the term “extinction coefficient” as usedherein, may generally refer to a degree to which an EM coefficient maybe attenuated when propagating through a material. In some non-limitingexamples, the extinction coefficient may be understood to correspond tothe imaginary component k of a complex refractive index. In somenon-limiting examples, the extinction coefficient of a material may bemeasured by a variety of methods, including without limitation, byellipsometry.

In the present disclosure, the terms “refractive index”, and/or “index”,as used herein to describe a medium, may refer to a value calculatedfrom a ratio of the speed of light in such medium relative to the speedof light in a vacuum. In the present disclosure, particularly when usedto describe the properties of substantially transparent materials,including without limitation, thin film layers, and/or coatings, theterms may correspond to the real part, n, in the expression N=n+ik, inwhich N may represent the complex refractive index and k may representthe extinction coefficient.

As would be appreciated by those having ordinary skill in the relevantart, substantially transparent materials, including without limitation,thin film layers, and/or coatings, may generally exhibit a relativelylow extinction coefficient value in the visible spectrum, and thereforethe imaginary component of the expression may have a negligiblecontribution to the complex refractive index. On the other hand,light-transmissive electrodes formed, for example, by a metallic thinfilm, may exhibit a relatively low refractive index value and arelatively high extinction coefficient value in the visible spectrum.Accordingly, the complex refractive index, N, of such thin films may bedictated primarily by its imaginary component k.

In the present disclosure, unless the context dictates otherwise,reference without specificity to a refractive index may be intended tobe a reference to the real part n of the complex refractive index N.

In some non-limiting examples, there may be a generally positivecorrelation between refractive index and transmittance, or in otherwords, a generally negative correlation between refractive index andabsorption. In some non-limiting examples, the absorption edge of asubstance may correspond to a wavelength at which the extinctioncoefficient approaches 0.

It will be appreciated that the refractive index, and/or extinctioncoefficient values described herein may correspond to such value(s)measured at a wavelength in the visible spectrum. In some non-limitingexamples, the refractive index, and/or extinction coefficient value maycorrespond to the value measured at wavelength(s) of about 456 nm whichmay correspond to a peak emission wavelength of a B(lue) subpixel, about528 nm which may correspond to a peak emission wavelength of a G(reen)subpixel, and/or about 624 nm which may correspond to a peak emissionwavelength of a R(ed) subpixel. In some non-limiting examples, therefractive index, and/or extinction coefficient value described hereinmay correspond to a value measured at a wavelength of about 589 nm,which may approximately correspond to the Fraunhofer D-line.

In the present disclosure, the concept of a pixel may be discussed onconjunction with the concept of at least one sub-pixel thereof. Forsimplicity of description only, such composite concept may be referencedherein as a “(sub-) pixel” and such term may be understood to suggesteither, or both of, a pixel, and/or at least one sub-pixel thereof,unless the context dictates otherwise.

In some nonlimiting examples, one measure of an amount of a material ona surface may be a percentage coverage of the surface by such material.In some non-limiting examples, surface coverage may be assessed using avariety of imaging techniques, including without limitation, TEM, AFM,and/or SEM.

In the present disclosure, the terms “particle”, “island”, and “cluster”may be used interchangeably to refer to similar concepts.

In the present disclosure, for purposes of simplicity of description,the terms “coating film”, “closed coating”, and/or “closed film”, asused herein, may refer to a thin film structure, and/or coating of adeposited material used for a deposited layer, in which a relevant partof a surface may be substantially coated thereby, such that such surfacemay be not substantially exposed by or through the coating filmdeposited thereon.

In the present disclosure, unless the context dictates otherwise,reference without specificity to a thin film may be intended to be areference to a substantially closed coating.

In some non-limiting examples, a closed coating, in some non-limitingexamples, of a deposited layer, and/or a deposited material, may bedisposed to cover a part of an underlying surface, such that, withinsuch part, no more than at least one of about: 40%, 30%, 25%, 20%, 15%,10%, 5%, 3%, or 1% of the underlying surface therewithin may be exposedby, or through, the closed coating.

Those having ordinary skill in the relevant art will appreciate that aclosed coating may be patterned using various techniques and processes,including without limitation, those described herein, to deliberatelyleave a part of the exposed layer surface of the underlying surface tobe exposed after deposition of the closed coating. In the presentdisclosure, such patterned films may nevertheless be considered toconstitute a closed coating, if, by way of non-limiting example, thethin film, and/or coating that is deposited, within the context of suchpatterning, and between such deliberately exposed parts of the exposedlayer surface of the underlying surface, itself substantially comprisesa closed coating.

Those having ordinary skill in the relevant art will appreciate that,due to inherent variability in the deposition process, and in somenon-limiting examples, to the existence of impurities in either, or bothof, the deposited materials, in some non-limiting examples, thedeposited material, and the exposed layer surface of the underlyingmaterial, deposition of a thin film, using various techniques andprocesses, including without limitation, those described herein, maynevertheless result in the formation of small apertures, includingwithout limitation, pin-holes, tears, and/or cracks, therein. In thepresent disclosure, such thin films may nevertheless be considered toconstitute a closed coating, if, by way of non-limiting example, thethin film, and/or coating that is deposited substantially comprises aclosed coating and meets any specified percentage coverage criterion setout, despite the presence of such apertures.

In the present disclosure, for purposes of simplicity of description,the term “discontinuous layer” as used herein, may refer to a thin filmstructure, and/or coating of a material used for a deposited layer, inwhich a relevant part of a surface coated thereby, may be neithersubstantially devoid of such material, nor forms a closed coatingthereof. In some non-limiting examples, a discontinuous layer of adeposited material may manifest as a plurality of discrete islandsdisposed on such surface.

In the present disclosure, for purposes of simplicity of description,the result of deposition of vapor monomers onto an exposed layer surfaceof an underlying material, that has not (yet) reached a stage where aclosed coating has been formed, may be referred to as a “intermediatestage layer”. In some non-limiting examples, such an intermediate stagelayer may reflect that the deposition process has not been completed, inwhich such an intermediate stage layer may be considered as an interimstage of formation of a closed coating. In some non-limiting examples,an intermediate stage layer may be the result of a completed depositionprocess, and thus constitute a final stage of formation in and ofitself.

In some non-limiting examples, an intermediate stage layer may moreclosely resemble a thin film than a discontinuous layer but may haveapertures, and/or gaps in the surface coverage, including withoutlimitation, at least one dendritic projection, and/or at least onedendritic recess. In some non-limiting examples, such an intermediatestage layer may comprise a fraction of a single monolayer of thedeposited material such that it does not form a closed coating.

In the present disclosure, for purposes of simplicity of description,the term “dendritic”, with respect to a coating, including withoutlimitation, the deposited layer, may refer to feature(s) that resemble abranched structure when viewed in a lateral aspect. In some non-limitingexamples, the deposited layer may comprise a dendritic projection,and/or a dendritic recess. In some non-limiting examples, a dendriticprojection may correspond to a part of the deposited layer that exhibitsa branched structure comprising a plurality of short projections thatare physically connected and extend substantially outwardly. In somenon-limiting examples, a dendritic recess may correspond to a branchedstructure of gaps, openings, and/or uncovered parts of the depositedlayer that are physically connected and extend substantially outwardly.In some non-limiting examples, a dendritic recess may correspond to,including without limitation, a mirror image, and/or inverse pattern, tothe pattern of a dendritic projection. In some non-limiting examples, adendritic projection, and/or a dendritic recess may have a configurationthat exhibits, and/or mimics a fractal pattern, a mesh, a web, and/or aninterdigitated structure.

In some non-limiting examples, sheet resistance may be a property of acomponent, layer, and/or part that may alter a characteristic of anelectric current passing through such component, layer, and/or part. Insome non-limiting examples, a sheet resistance of a coating maygenerally correspond to a characteristic sheet resistance of thecoating, measured, and/or determined in isolation from other components,layers, and/or parts of the device.

In the present disclosure, a deposited density may refer to adistribution, within a region, which in some non-limiting examples maycomprise an area, and/or a volume, of a deposited material therein.Those having ordinary skill in the relevant art will appreciate thatsuch deposited density may be unrelated to a density of mass or materialwithin a particle structure itself that may comprise such depositedmaterial. In the present disclosure, unless the context dictatesotherwise, reference to a deposited density, and/or to a density, may beintended to be a reference to a distribution of such deposited material,including without limitation, as at least one particle, within an area.

In some non-limiting examples, a bond dissociation energy of a metal maycorrespond to a standard-state enthalpy change measured at 298 K fromthe breaking of a bond of a diatomic molecule formed by two identicalatoms of the metal. Bond dissociation energies may, by way ofnon-limiting example, be determined based on known literature includingwithout limitation, Luo, Yu-Ran, “Bond Dissociation Energies” (2010).

Without wishing to be bound by a particular theory, it is postulatedthat providing an NPC may facilitate deposition of the deposited layeronto certain surfaces.

Non-limiting examples of suitable materials for forming an NPC maycomprise without limitation, at least one metal, including withoutlimitation, alkali metals, alkaline earth metals, transition metals,and/or post-transition metals, metal fluorides, metal oxides, and/orfullerene.

Non-limiting examples of such materials may comprise Ca, Ag, Mg, Yb,ITO, IZO, ZnO, ytterbium fluoride (YbF₃), magnesium fluoride (MgF₂),and/or cesium fluoride (CsF).

In the present disclosure, the term “fullerene” may refer generally to amaterial including carbon molecules. Non-limiting examples of fullerenemolecules include carbon cage molecules, including without limitation, athree-dimensional skeleton that includes multiple carbon atoms that forma closed shell, and which may be, without limitation, spherical, and/orsemi-spherical in shape. In some non-limiting examples, a fullerenemolecule may be designated as C_(n), where n may be an integercorresponding to several carbon atoms included in a carbon skeleton ofthe fullerene molecule. Non-limiting examples of fullerene moleculesinclude C_(n), where n may be in the range of 50 to 250, such as,without limitation, C₆₀, C₇₀, C₇₂, C₇₄, C₇₆, C₇₈, C₈₀, C₈₂, and C₈₄.Additional non-limiting examples of fullerene molecules include carbonmolecules in a tube, and/or a cylindrical shape, including withoutlimitation, single-walled carbon nanotubes, and/or multi-walled carbonnanotubes.

Based on findings and experimental observations, it may be postulatedthat nucleation promoting materials, including without limitation,fullerenes, metals, including without limitation, Ag, and/or Yb, and/ormetal oxides, including without limitation, ITO, and/or IZO, asdiscussed further herein, may act as nucleation sites for the depositionof a deposited layer, including without limitation Mg.

In some non-limiting examples, suitable materials for use to form anNPC, may include those exhibiting or characterized as having an initialsticking probability for a material of a deposited layer of at least oneof at least about: 0.4, 0.5, 0.6, 0.7, 0.75, 0.8, 0.9, 0.93, 0.95, 0.98,or 0.99.

By way of non-limiting example, in scenarios where Mg is deposited usingwithout limitation, an evaporation process on a fullerene-treatedsurface, in some non-limiting examples, the fullerene molecules may actas nucleation sites that may promote formation of stable nuclei for Mgdeposition.

In some non-limiting examples, no more than a monolayer of an NPC,including without limitation, fullerene, may be provided on the treatedsurface to act as nucleation sites for deposition of Mg.

In some non-limiting examples, treating a surface by depositing severalmonolayers of an NPC thereon may result in a higher number of nucleationsites and accordingly, a higher initial sticking probability.

Those having ordinary skill in the relevant art will appreciate than anamount of material, including without limitation, fullerene, depositedon a surface, may be more, or less than one monolayer. By way ofnon-limiting example, such surface may be treated by depositing at leastone of about: 0.1, 1, 10, or more monolayers of a nucleation promotingmaterial, and/or a nucleation inhibiting material.

In some non-limiting examples, an average layer thickness of the NPCdeposited on an exposed layer surface of underlying material(s) may beat least one of between about: 1-5 nm, or 1-3 nm.

Where features or aspects of the present disclosure may be described interms of Markush groups, it will be appreciated by those having ordinaryskill in the relevant art that the present disclosure may also bethereby described in terms of any individual member of sub-group ofmembers of such Markush group.

Terminology

References in the singular form may include the plural and vice versa,unless otherwise noted.

As used herein, relational terms, such as “first” and “second”, andnumbering devices such as “a”, “b” and the like, may be used solely todistinguish one entity or element from another entity or element,without necessarily requiring or implying any physical or logicalrelationship or order between such entities or elements.

The terms “including” and “comprising” may be used expansively and in anopen-ended fashion, and thus should be interpreted to mean “including,but not limited to”. The terms “example” and “exemplary” may be usedsimply to identify instances for illustrative purposes and should not beinterpreted as limiting the scope of the invention to the statedinstances. In particular, the term “exemplary” should not be interpretedto denote or confer any laudatory, beneficial, or other quality to theexpression with which it is used, whether in terms of design,performance or otherwise.

Further, the term “critical”, especially when used in the expressions“critical nuclei”, “critical nucleation rate”, “critical concentration”,“critical cluster”, “critical monomer”, “critical particle structuresize”, and/or “critical surface tension” may be a term familiar to thosehaving ordinary skill in the relevant art, including as relating to orbeing in a state in which a measurement or point at which some quality,property or phenomenon undergoes a definite change. As such, the term“critical” should not be interpreted to denote or confer anysignificance or importance to the expression with which it is used,whether in terms of design, performance, or otherwise.

The terms “couple” and “communicate” in any form may be intended to meaneither a direct connection or indirect connection through someinterface, device, intermediate component, or connection, whetheroptically, electrically, mechanically, chemically, or otherwise.

The terms “on” or “over” when used in reference to a first componentrelative to another component, and/or “covering” or which “covers”another component, may encompass situations where the first component isdirectly on (including without limitation, in physical contact with) theother component, as well as cases where at least one interveningcomponent is positioned between the first component and the othercomponent.

Directional terms such as “upward”, “downward”, “left” and “right” maybe used to refer to directions in the drawings to which reference ismade unless otherwise stated. Similarly, words such as “inward” and“outward” may be used to refer to directions toward and away from,respectively, the geometric center of the device, area or volume ordesignated parts thereof. Moreover, all dimensions described herein maybe intended solely to be by way of example of purposes of illustratingcertain examples and may not be intended to limit the scope of thedisclosure to any examples that may depart from such dimensions as maybe specified.

As used herein, the terms “substantially”, “substantial”,“approximately”, and/or “about” may be used to denote and account forsmall variations. When used in conjunction with an event orcircumstance, such terms may refer to instances in which the event orcircumstance occurs precisely, as well as instances in which the eventor circumstance occurs to a close approximation. By way of non-limitingexample, when used in conjunction with a numerical value, such terms mayrefer to a range of variation of no more than about ±10% of suchnumerical value, such as no more than at least one of about: ±5%, ±4%,±3%, ±2%, ±1%, ±0.5%, ±0.1%, or ±0.05%.

As used herein, the phrase “consisting substantially of” may beunderstood to include those elements specifically recited and anyadditional elements that do not materially affect the basic and novelcharacteristics of the described technology, while the phrase“consisting of” without the use of any modifier, may exclude any elementnot specifically recited.

As will be understood by those having ordinary skill in the relevantart, for any and all purposes, particularly in terms of providing awritten description, all ranges disclosed herein may also encompass anyand all possible sub-ranges, and/or combinations of sub-ranges thereof.Any listed range may be easily recognized as sufficiently describing,and/or enabling the same range being broken down at least into equalfractions thereof, including without limitation, halves, thirds,quarters, fifths, tenths etc. As a non-limiting example, each rangediscussed herein may be readily be broken down into a lower third,middle third, and/or upper third, etc.

As will also be understood by those having ordinary skill in therelevant art, all language, and/or terminology such as “up to”, “atleast”, “greater than”, “less than”, and the like, may include, and/orrefer the recited range(s) and may also refer to ranges that may besubsequently broken down into sub-ranges as discussed herein.

As will be understood by those having ordinary skill in the relevantart, a range may include each individual member of the recited range.

General

The purpose of the Abstract is to enable the relevant patent office orthe public generally, and specifically, persons of ordinary skill in theart who are not familiar with patent or legal terms or phraseology, toquickly determine from a cursory inspection, the nature of the technicaldisclosure. The Abstract is neither intended to define the scope of thisdisclosure, nor is it intended to be limiting as to the scope of thisdisclosure in any way.

The structure, manufacture and use of the presently disclosed exampleshave been discussed above. The specific examples discussed are merelyillustrative of specific ways to make and use the concepts disclosedherein, and do not limit the scope of the present disclosure. Rather,the general principles set forth herein are merely illustrative of thescope of the present disclosure.

It should be appreciated that the present disclosure, which is describedby the claims and not by the implementation details provided, and whichcan be modified by varying, omitting, adding or replacing, and/or in theabsence of any element(s), and/or limitation(s) with alternatives,and/or equivalent functional elements, whether or not specificallydisclosed herein, will be apparent to those having ordinary skill in therelevant art, may be made to the examples disclosed herein, and mayprovide many applicable inventive concepts that may be embodied in awide variety of specific contexts, without straying from the presentdisclosure.

In particular, features, techniques, systems, sub-systems and methodsdescribed and illustrated in at least one of the above-describedexamples, whether or not described and illustrated as discrete orseparate, may be combined or integrated in another system withoutdeparting from the scope of the present disclosure, to createalternative examples comprised of a combination or sub-combination offeatures that may not be explicitly described above, or certain featuresmay be omitted, or not implemented. Features suitable for suchcombinations and sub-combinations would be readily apparent to personsskilled in the art upon review of the present application as a whole.Other examples of changes, substitutions, and alterations are easilyascertainable and could be made without departing from the spirit andscope disclosed herein.

All statements herein reciting principles, aspects, and examples of thedisclosure, as well as specific examples thereof, are intended toencompass both structural and functional equivalents thereof and tocover and embrace all suitable changes in technology. Additionally, itis intended that such equivalents include both currently knownequivalents as well as equivalents developed in the future, i.e., anyelements developed that perform the same function, regardless ofstructure.

Clauses

The present disclosure includes, without limitation, the followingclauses:

The device according to at least one clause herein wherein thepatterning coating comprises a patterning material.

The device according to at least one clause herein, wherein an initialsticking probability against deposition of the deposited material of thepatterning coating is no more than an initial sticking probabilityagainst deposition of the deposited material of the exposed layersurface.

The device according to at least one clause herein, wherein thepatterning coating is substantially devoid of a closed coating of thedeposited material.

The device according to at least one clause herein, wherein at least oneof the patterning coating and the patterning material has an initialsticking probability against deposition of the deposited material thatis no more than at least one of about: 0.9, 0.3, 0.2, 0.15, 0.1, 0.08,0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005,0.0003, and 0.0001.

The device according to at least one clause herein, wherein at least oneof the patterning coating and the patterning material has an initialsticking probability against deposition of at least one of silver (Ag)and magnesium (Mg) that is no more than at least one of about: 0.9, 0.3,0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003,0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

The device according to at least one clause herein, wherein at least oneof the patterning coating and the patterning material has an initialsticking probability against deposition of the deposited material of atleast one of between about: 0.15-0.0001, 0.1-0.0003, 0.08-0.0005,0.08-0.0008, 0.05-0.001, 0.03-0.0001, 0.03-0.0003, 0.03-0.0005,0.03-0.0008, 0.03-0.001, 0.03-0.005, 0.03-0.008, 0.03-0.01, 0.02-0.0001,0.02-0.0003, 0.02-0.0005, 0.02-0.0008, 0.02-0.001, 0.02-0.005,0.02-0.008, 0.02-0.01, 0.01-0.0001, 0.01-0.0003, 0.01-0.0005,0.01-0.0008, 0.01-0.001, 0.01-0.005, 0.01-0.008, 0.008-0.0001,0.008-0.0003, 0.008-0.0005, 0.008-0.0008, 0.008-0.001, 0.008-0.005,0.005-0.0001, 0.005-0.0003, 0.005-0.0005, 0.005-0.0008, and 0.005-0.001.

The device according to at least one clause herein, wherein at least oneof the patterning coating and the patterning material has an initialsticking probability against deposition of the deposited material thatis no more than a threshold value that is at least one of about: 0.3,0.2, 0.18, 0.15, 0.13, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005,0.003, and 0.001.

The device according to at least one clause herein, wherein at least oneof the patterning coating and the patterning material has an initialsticking probability against the deposition of at least one of: Ag, Mg,ytterbium (Yb), cadmium (Cd), and zinc (Zn), that is no more than thethreshold value.

The device according to at least one clause herein, wherein thethreshold value has a first threshold value against the deposition of afirst deposited material and a second threshold value against thedeposition of a second deposited material.

The device according to at least one clause herein, wherein the firstdeposited material is Ag and the second deposited material is Mg.

The device according to at least one clause herein, wherein the firstdeposited material is Ag and the second deposited material is Yb.

The device according to at least one clause herein, wherein the firstdeposited material is Yb and the second deposited material is Mg.

The device according to at least one clause herein, wherein the firstthreshold value exceeds the second threshold value.

The device according to at least one clause herein, wherein at least oneof the patterning coating and the patterning material has atransmittance for EM radiation of at least a threshold transmittancevalue after being subjected to a vapor flux 1232 of the depositedmaterial.

The device according to at least one clause herein, wherein thethreshold transmittance value is measured at a wavelength in the visiblespectrum.

The device according to at least one clause herein, wherein thethreshold transmittance value is at least one of at least about 60%,65%, 70%, 75%, 80%, 85%, and 90% of incident EM power transmittedtherethrough.

The device according to at least one clause herein, wherein at least oneof the patterning coating and the patterning material has a surfaceenergy of no more than at least one of about: 24 dynes/cm, 22 dynes/cm,20 dynes/cm, 18 dynes/cm, 16 dynes/cm, 15 dynes/cm, 13 dynes/cm, 12dynes/cm, and 11 dynes/cm.

The device according to at least one clause herein, wherein at least oneof the patterning coating and the patterning material has a surfaceenergy that is at least one of at least about: 6 dynes/cm, 7 dynes/cm,and 8 dynes/cm.

The device according to at least one clause herein, wherein at least oneof the patterning coating and the patterning material has a surfaceenergy that is at least one of between about: 10-20 dynes/cm, and 13-19dynes/cm.

The device according to at least one clause herein, wherein at least oneof the patterning coating and the patterning material has a refractiveindex for EM radiation at a wavelength of 550 nm that is no more than atleast one of about: 1.55, 1.5, 1.45, 1.43, 1.4, 1.39, 1.37, 1.35, 1.32,and 1.3

The device according to at least one clause herein, wherein at least oneof the patterning coating and the patterning material has an extinctioncoefficient that is no more than about 0.01 for photons at a wavelengththat exceeds at least one of about: 600 nm, 500 nm, 460 nm, 420 nm, and410 nm.

The device according to at least one clause herein, wherein at least oneof the patterning coating and the patterning material has an extinctioncoefficient that is at least one of at least about: 0.05, 0.1, 0.2, 0.5for EM radiation at a wavelength shorter than at least one of at leastabout: 400 nm, 390 nm, 380 nm, and 370 nm.

The device according to at least one clause herein, wherein at least oneof the patterning coating and the patterning material has a glasstransition temperature that is no more than at least one of about: 300°C., 150° C., 130° C., 30° C., 0° C., −30° C., and −50° C.

The device according to at least one clause herein, wherein thepatterning material has a sublimation temperature of at least one ofbetween about: 100-320° C., 120-300° C., 140-280° C., and 150-250° C.

The device according to at least one clause herein, wherein at least oneof the patterning coating and the patterning material comprises at leastone of a fluorine atom and a silicon atom.

The device according to at least one clause herein, wherein thepatterning coating comprises fluorine and carbon.

The device according to at least one clause herein, wherein an atomicratio of a quotient of fluorine by carbon is at least one of about: 1,1.5, and 2.

The device according to at least one clause herein, wherein thepatterning coating comprises an oligomer.

The device according to at least one clause herein, wherein thepatterning coating comprises a compound having a molecular structurecontaining a backbone and at least one functional group bonded thereto.

The device according to at least one clause herein, wherein the compoundcomprises at least one of: a siloxane group, a silsesquioxane group, anaryl group, a heteroaryl group, a fluoroalkyl group, a hydrocarbongroup, a phosphazene group, a fluoropolymer, and a metal complex.

The device according to at least one clause herein, wherein a molecularweight of the compound is no more than at least one of about: 5,000g/mol, 4,500 g/mol, 4,000 g/mol, 3,800 g/mol, and 3,500 g/mol.

The device according to at least one clause herein, wherein themolecular weight is at least about: 1,500 g/mol, 1,700 g/mol, 2,000g/mol, 2,200 g/mol, and 2,500 g/mol.

The device according to at least one clause herein, wherein themolecular weight is at least one of between about: 1,500-5,000 g/mol,1,500-4,500 g/mol, 1,700-4,500 g/mol, 2,000-4,000 g/mol, 2,200-4,000g/mol, and 2,500-3,800 g/mol.

The device according to at least one clause herein, wherein a percentageof a molar weight of the compound that is attributable to a presence offluorine atoms, is at least one of between about: 40-90%, 45-85%,50-80%, 55-75%, and 60-75%.

The device according to at least one clause herein, wherein fluorineatoms comprise a majority of the molar weight of the compound.

The device according to at least one clause herein, wherein thepatterning material comprises an organic-inorganic hybrid material.

The device according to at least one clause herein, wherein thepatterning coating has at least one nucleation site for the depositedmaterial.

The device according to at least one clause herein, wherein thepatterning coating is supplemented with a seed material that acts as anucleation site for the deposited material.

The device according to at least one clause herein, wherein the seedmaterial comprises at least one of: a nucleation promoting coating (NPC)material, an organic material, a polycyclic aromatic compound, and amaterial comprising a non-metallic element selected from at least one ofoxygen (O), sulfur (S), nitrogen (N), and carbon (C).

The device according to at least one clause herein, wherein thepatterning coating acts as an optical coating.

The device according to at least one clause herein, wherein thepatterning coating modifies at least one of a property and acharacteristic of EM radiation emitted by the device.

The device according to at least one clause herein, wherein thepatterning coating comprises a crystalline material.

The device according to at least one clause herein, wherein thepatterning coating is deposited as a non-crystalline material andbecomes crystallized after deposition.

The device according to at least one clause herein, wherein thedeposited layer comprises a deposited material.

The device according to at least one clause herein, wherein thedeposited material comprises an element selected from at least one of:potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs),ytterbium (Yb), silver (Ag), gold (Au), copper (Cu), aluminum (Al),magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), and yttrium (Y).

The device according to at least one clause herein, wherein thedeposited material comprises a pure metal.

The device according to at least one clause herein, wherein thedeposited material is selected from at least one of pure Ag andsubstantially pure Ag.

The device according to at least one clause herein, wherein thesubstantially pure Ag has a purity of at least one of at least about:95%, 99%, 99.9%, 99.99%, 99.999%, and 99.9995%.

The device according to at least one clause herein, wherein thedeposited material is selected from at least one of pure Mg andsubstantially pure Mg.

The device according to at least one clause herein, wherein thesubstantially pure Mg has a purity of at least one of at least about:95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%.

The device according to at least one clause herein, wherein thedeposited material comprises an alloy.

The device according to at least one clause herein, wherein thedeposited material comprises at least one of: an Ag-containing alloy, anMg-containing alloy, and an AgMg-containing alloy.

The device according to at least one clause herein, wherein theAgMg-containing alloy has an alloy composition that ranges from 1:10(Ag:Mg) to about 10:1 by volume.

The device according to at least one clause herein, wherein thedeposited material comprises at least one metal other than Ag.

The device according to at least one clause herein, wherein thedeposited material comprises an alloy of Ag with at least one metal.

The device according to at least one clause herein, wherein the at leastone metal is selected from at least one of Mg and Yb.

The device according to at least one clause herein, wherein the alloy isa binary alloy having a composition between about 5-95 vol. % Ag.

The device according to at least one clause herein, wherein the alloycomprises a Yb:Ag alloy having a composition between about 1:20-10:1 byvolume.

The device according to at least one clause herein, wherein thedeposited material comprises an Mg:Yb alloy.

The device according to at least one clause herein, wherein thedeposited material comprises an Ag:Mg:Yb alloy.

The device according to at least one clause herein, wherein thedeposited layer comprises at least one additional element.

The device according to at least one clause herein, wherein the at leastone additional element is a non-metallic element.

The device according to at least one clause herein, wherein thenon-metallic element is selected from at least one of O, S, N, and C.

The device according to at least one clause herein, wherein aconcentration of the non-metallic element is no more than at least oneof about: 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, and0.0000001%.

The device according to at least one clause herein, wherein thedeposited layer has a composition in which a combined amount of 0 and Cis no more than at least one of about: 10%, 5%, 1%, 0.1%, 0.01%, 0.001%,0.0001%, 0.00001%, 0.000001%, and 0.0000001%.

The device according to at least one clause herein, wherein thenon-metallic element acts as a nucleation site for the depositedmaterial on the NIC.

The device according to at least one clause herein, wherein thedeposited material and the underlying layer comprise a common metal.

The device according to at least one clause herein, the deposited layercomprises a plurality of layers of the deposited material.

The device according to at least one clause herein, a deposited materialof a first one of the plurality of layers is different from a depositedmaterial of a second one of the plurality of layers.

The device according to at least one clause herein, wherein thedeposited layer comprises a multilayer coating.

The device according to at least one clause herein, wherein themultilayer coating is at least one of: Yb/Ag, Yb/Mg, Yb/Mg:Ag, Yb/Yb:Ag,Yb/Ag/Mg, and Yb/Mg/Ag.

The device according to at least one clause herein, wherein thedeposited material comprises a metal having a bond dissociation energyof no more than at least one of about: 300 kJ/mol, 200 kJ/mol, 165kJ/mol, 150 kJ/mol, 100 kJ/mol, 50 kJ/mol, and 20 kJ/mol.

The device according to at least one clause herein, wherein thedeposited material comprises a metal having an electronegativity of nomore than at least one of about: 1.4, 1.3, and 1.2.

The device according to at least one clause herein, wherein a sheetresistance of the deposited layer is no more than at least one of about:10Ω/□, 5Ω/□, 1Ω/□, 0.5Ω/□, 0.2Ω/□, and 0.1Ω/□.

The device according to at least one clause herein, wherein thedeposited layer is disposed in a pattern defined by at least one regiontherein that is substantially devoid of a closed coating thereof.

The device according to at least one clause herein, wherein the at leastone region separates the deposited layer into a plurality of discretefragments thereof.

The device according to at least one clause herein, wherein at least twodiscrete fragments are electrically coupled.

The device according to at least one clause herein, wherein thepatterning coating has a boundary defined by a patterning coating edge.

The device according to at least one clause herein, wherein thepatterning coating comprises at least one patterning coating transitionregion and a patterning coating non-transition part.

The device according to at least one clause herein, wherein the at leastone patterning coating transition region transitions from a maximumthickness to a reduced thickness.

The device according to at least one clause herein, wherein the at leastone patterning coating transition region extends between the patterningcoating non-transition part and the patterning coating edge.

The device according to at least one clause herein, wherein thepatterning coating has an average film thickness in the patterningcoating non-transition part that is in a range of at least one ofbetween about: 1-100 nm, 2-50 nm, 3-30 nm, 4-20 nm, 5-15 nm, 5-10 nm,and 1-10 nm.

The device according to at least one clause herein, wherein a thicknessof the patterning coating in the patterning coating non-transition partis within at least one of about: 95%, and 90% of the average filmthickness of the NIC.

The device according to at least one clause herein, wherein the averagefilm thickness is no more than at least one of about: 80 nm, 60 nm, 50nm, 40 nm, 30 nm, 20 nm, 15 nm, and 10 nm.

The device according to at least one clause herein, wherein the averagefilm thickness exceeds at least one of about: 3 nm, 5 nm, and 8 nm.

The device according to at least one clause herein, wherein the averagefilm thickness is no more than about 10 nm.

The device according to at least one clause herein, wherein thepatterning coating has a patterning coating thickness that decreasesfrom a maximum to a minimum within the patterning coating transitionregion.

The device according to at least one clause herein, wherein the maximumis proximate to a boundary between the patterning coating transitionregion and the patterning coating non-transition part.

The device according to at least one clause herein, wherein the maximumis a percentage of the average film thickness that is at least one ofabout: 100%, 95%, and 90%.

The device according to at least one clause herein, wherein the minimumis proximate to the patterning coating edge.

The device according to at least one clause herein, wherein the minimumis in a range of between about: 0-0.1 nm.

The device according to at least one clause herein, wherein a profile ofthe patterning coating thickness is at least one of sloped, tapered, anddefined by a gradient.

The device according to at least one clause herein, wherein the taperedprofile follows at least one of a linear, non-linear, parabolic, andexponential decaying profile.

The device according to at least one clause herein, wherein anon-transition width along a lateral axis of the patterning coatingnon-transition region exceeds a transition width along the axis of thepatterning coating transition region.

The device according to at least one clause herein, wherein a quotientof the non-transition width by the transition width is at least one ofat least about: 5, 10, 20, 50, 100, 500, 1,000, 1,500, 5,000, 10,000,50,000, or 100,000.

The device according to at least one clause herein, wherein at least oneof the non-transition width and the transition width exceeds an averagefilm thickness of the underlying layer.

The device according to at least one clause herein, wherein at least oneof the non-transition width and the transition width exceeds the averagefilm thickness of the patterning coating.

The device according to at least one clause herein, wherein the averagefilm thickness of the underlying layer exceeds the average filmthickness of the patterning coating.

The device according to at least one clause herein, wherein thedeposited layer has a boundary defined by a deposited layer edge.

The device according to at least one clause herein, wherein thedeposited layer comprises at least one deposited layer transition regionand a deposited layer non-transition part.

The device according to at least one clause herein, wherein the at leastone deposited layer transition region transitions from a maximumthickness to a reduced thickness.

The device according to at least one clause herein, wherein the at leastone deposited layer transition region extends between the depositedlayer non-transition part and the deposited layer edge.

The device according to at least one clause herein, wherein thedeposited layer has an average film thickness in the deposited layernon-transition part that is in a range of at least one of between about:1-500 nm, 5-200 nm, 5-40 nm, 10-30 nm, and 10-100 nm.

The device according to at least one clause herein, wherein the averagefilm thickness exceeds at least one of about: 10 nm, 50 nm, and 100 nm.

The device according to at least one clause herein, wherein the averagefilm thickness of is substantially constant thereacross.

The device according to at least one clause herein, wherein the averagefilm thickness exceeds an average film thickness of the underlyinglayer.

The device according to at least one clause herein, wherein a quotientof the average film thickness of the deposited layer by the average filmthickness of the underlying layer is at least one of at least about:1.5, 2, 5, 10, 20, 50, and 100.

The device according to at least one clause herein, wherein the quotientis in a range of at least one of between about: 0.1-10, and 0.2-40.

The device according to at least one clause herein, wherein the averagefilm thickness of the deposited layer exceeds an average film thicknessof the patterning coating.

The device according to at least one clause herein, wherein a quotientof the average film thickness of the deposited layer by the average filmthickness of the patterning coating is at least one of at least about:1.5, 2, 5, 10, 20, 50, and 100.

The device according to at least one clause herein, wherein the quotientis in a range of at least one of between about: 0.2-10, and 0.5-40.

The device according to at least one clause herein, wherein a depositedlayer non-transition width along a lateral axis of the deposited layernon-transition part exceeds a patterning coating non-transition widthalong the axis of the patterning coating non-transition part.

The device according to at least one clause herein, wherein a quotientof the patterning coating non-transition width by the deposited layernon-transition width is at least one of between about: 0.1-10, 0.2-5,0.3-3, and 0.4-2.

The device according to at least one clause herein, wherein a quotientof the deposited layer non-transition width by the patterning coatingnon-transition width is at least one of at least: 1, 2, 3, and 4.

The device according to at least one clause herein, wherein thedeposited layer non-transition width exceeds the average film thicknessof the deposited layer.

The device according to at least one clause herein, wherein a quotientof the deposited layer non-transition width by the average filmthickness is at least one of at least about: 10, 50, 100, and 500.

The device according to at least one clause herein, wherein the quotientis no more than about 100,000.

The device according to at least one clause herein, wherein thedeposited layer has a deposited layer thickness that decreases from amaximum to a minimum within the deposited layer transition region.

The device according to at least one clause herein, wherein the maximumis proximate to a boundary between the deposited layer transition regionand the deposited layer non-transition part.

The device according to at least one clause herein, wherein the maximumis the average film thickness.

The device according to at least one clause herein, wherein the minimumis proximate to the deposited layer edge.

The device according to at least one clause herein, wherein the minimumis in a range of between about: 0-0.1 nm.

The device according to at least one clause herein, wherein the minimumis the average film thickness.

The device according to at least one clause herein, wherein a profile ofthe deposited layer thickness is at least one of sloped, tapered, anddefined by a gradient.

The device according to at least one clause herein, wherein the taperedprofile follows at least one of a linear, non-linear, parabolic, andexponential decaying profile.

The device according to at least one clause herein, wherein thedeposited layer comprises a discontinuous layer in at least a part ofthe deposited layer transition region.

The device according to at least one clause herein, wherein thedeposited layer overlaps the patterning coating in an overlap portion.

The device according to at least one clause herein, wherein thepatterning coating overlaps the deposited layer in an overlap portion.

The device according to at least one clause herein, further comprisingat least one particle structure disposed on an exposed layer surface ofan underlying layer.

The device according to at least one clause herein, wherein theunderlying layer is the patterning coating.

The device according to at least one clause herein, wherein the at leastone particle structure comprises a particle material.

The device according to at least one clause herein, wherein the particlematerial is the same as the deposited material.

The device according to at least one clause herein, wherein at least twoof the particle material, the deposited material, and a material ofwhich the underlying layer is comprised, comprises a common metal.

The device according to at least one clause herein, wherein the particlematerial comprises an element selected from at least one of: potassium(K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), ytterbium(Yb), silver (Ag), gold (Au), copper (Cu), aluminum (Al), magnesium(Mg), zinc (Zn), cadmium (Cd), tin (Sn), and yttrium (Y).

The device according to at least one clause herein, wherein the particlematerial comprises a pure metal.

The device according to at least one clause herein, wherein the particlematerial is selected from at least one of pure Ag and substantially pureAg.

The device according to at least one clause herein, wherein thesubstantially pure Ag has a purity of at least one of at least about:95%, 99%, 99.9%, 99.99%, 99.999%, and 99.9995%.

The device according to at least one clause herein, wherein the particlematerial is selected from at least one of pure Mg and substantially pureMg.

The device according to at least one clause herein, wherein thesubstantially pure Mg has a purity of at least one of at least about:95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%.

The device according to at least one clause herein, wherein the particlematerial comprises an alloy.

The device according to at least one clause herein, wherein the particlematerial comprises at least one of: an Ag-containing alloy, anMg-containing alloy, and an AgMg-containing alloy.

The device according to at least one clause herein, wherein theAgMg-containing alloy has an alloy composition that ranges from 1:10(Ag:Mg) to about 10:1 by volume.

The device according to at least one clause herein, wherein the particlematerial comprises at least one metal other than Ag.

The device according to at least one clause herein, wherein the particlematerial comprises an alloy of Ag with at least one metal.

The device according to at least one clause herein, wherein the at leastone metal is selected from at least one of Mg and Yb.

The device according to at least one clause herein, wherein the alloy isa binary alloy having a composition between about 5-95 vol. % Ag.

The device according to at least one clause herein, wherein the alloycomprises a Yb:Ag alloy having a composition between about 1:20-10:1 byvolume.

The device according to at least one clause herein, wherein the particlematerial comprises an Mg:Yb alloy.

The device according to at least one clause herein, wherein the particlematerial comprises an Ag:Mg:Yb alloy.

The device according to at least one clause herein, wherein the at leastone particle structure comprises at least one additional element.

The device according to at least one clause herein, wherein the at leastone additional element is a non-metallic element.

The device according to at least one clause herein, wherein thenon-metallic element is selected from at least one of O, S, N, and C.

The device according to at least one clause herein, wherein aconcentration of the non-metallic element is no more than at least oneof about: 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, and0.0000001%.

The device according to at least one clause herein, wherein the at leastone particle structure has a composition in which a combined amount of 0and C is no more than at least one of about: 10%, 5%, 1%, 0.1%, 0.01%,0.001%, 0.0001%, 0.00001%, 0.000001%, and 0.0000001%.

The device according to at least one clause herein, wherein the at leastone particle is disposed at an interface between the patterning coatingand at least one covering layer in the device.

The device according to at least one clause herein, wherein the at leastone particle is in physical contact with an exposed layer surface of thepatterning coating.

The device according to at least one clause herein, wherein the at leastone particle structure affects at least one optical property of thedevice.

The device according to at least one clause herein, wherein the at leastone optical property is controlled by selection of at least one propertyof the at least one particle structure selected from at least one of: acharacteristic size, a size distribution, a shape, a surface coverage, aconfiguration, a deposited density, and a dispersity.

The device according to at least one clause herein, wherein the at leastone property of the at least one particle structure is controlled byselection of at least one of: at least one characteristic of thepatterning material, an average film thickness of the patterningcoating, at least one heterogeneity in the patterning coating, and adeposition environment for the patterning coating, selected from atleast one of a temperature, pressure, duration, deposition rate, anddeposition process.

The device according to at least one clause herein, wherein the at leastone property of the at least one particle structure is controlled byselection of at least one of: at least one characteristic of theparticle material, an extent to which the patterning coating is exposedto deposition of the particle material, a thickness of the discontinuouslayer, and a deposition environment for the particle material, selectedfrom at least one of a temperature, pressure, duration, deposition rate,and deposition process.

The device according to at least one clause herein, wherein the at leastone particle structures are disconnected from one another.

The device according to at least one clause herein, wherein the at leastone particle structure forms a discontinuous layer.

The device according to at least one clause herein, wherein thediscontinuous layer is disposed in a pattern defined by at least oneregion therein that is substantially devoid of the at least one particlestructure.

The device according to at least one clause herein, wherein acharacteristic of the discontinuous layer is determined by an assessmentaccording to at least one criterion selected from at least one of: acharacteristic size, size distribution, shape, configuration, surfacecoverage, deposited distribution, dispersity, presence of aggregationinstances, and extent of such aggregation instances.

The device according to at least one clause herein, wherein theassessment is performed by determining at least one attribute of thediscontinuous layer by an applied imaging technique selected from atleast one of: electron microscopy, atomic force microscopy, and scanningelectron microscopy.

The device according to at least one clause herein, wherein theassessment is performed across an extent defined by at least oneobservation window.

The device according to at least one clause herein, wherein the at leastone observation window is located at at least one of: a perimeter,interior location, and grid coordinate of the lateral aspect.

The device according to at least one clause herein, wherein theobservation window corresponds to a field of view of the applied imagingtechnique.

The device according to at least one clause herein, wherein theobservation window corresponds to a magnification level selected from atleast one of: 2.00 μm, 1.00 μm, 500 nm, and 200 nm.

The device according to at least one clause herein, wherein theassessment incorporates at least one of: manual counting, curve fitting,polygon fitting, shape fitting, and an estimation technique.

The device according to at least one clause herein, wherein theassessment incorporates a manipulation selected from at least one of: anaverage, median, mode, maximum, minimum, probabilistic, statistical, anddata calculation.

The device according to at least one clause herein, wherein thecharacteristic size is determined from at least one of: a mass, volume,diameter, perimeter, major axis, and minor axis of the at least oneparticle structure.

The device according to at least one clause herein, wherein thedispersity is determined from:

$D = \frac{\overset{\_}{S_{s}}}{\overset{\_}{S_{n}}}$ where:${\overset{\_}{S_{s}} = \frac{\sum_{i = 1}^{n}S_{i}^{2}}{\sum_{i = 1}^{n}S_{i}}},{\overset{\_}{S_{n}} = \frac{\sum_{i = 1}^{n}S_{i}}{n}},$

n is the number of particles 60 in a sample area,

S_(i) is the (area) size of the i^(th) particle,

S _(n) is the number average of the particle (area) sizes; and

S _(s) is the (area) size average of the particle (area) sizes.

Accordingly, the specification and the examples disclosed therein are tobe considered illustrative only, with a true scope of the disclosurebeing disclosed by the following numbered claims:

1. A semiconductor device having a plurality of layers deposited on asubstrate and extending in at least one lateral aspect defined by alateral axis thereof, comprising: at least one electromagnetic (EM)radiation-absorbing layer deposited on a first layer surface andcomprising a discontinuous layer of at least one particle structurecomprising a deposited material; wherein the at least one particlestructure of the at least one EM radiation-absorbing layer facilitatesabsorption of EM radiation therein in at least a part of at least one ofa visible spectrum and an ultraviolet (UV) spectrum while substantiallyallowing transmission of EM radiation therein in at least a part of atleast one of an infrared (IR) spectrum and a near infrared (NIR)spectrum.
 2. The device of claim 1, wherein the deposited material is ametal.
 3. The device of claim 2, wherein the deposited materialcomprises at least one of magnesium, silver, and ytterbium.
 4. Thedevice of claim 1, wherein the deposited material is co-deposited with aco-deposited dielectric material.
 5. The device of claim 1, wherein theat least one particle structure has a characteristic feature selectedfrom at least one of: a size, size distribution, shape, surfacecoverage, configuration, deposited density, and composition.
 6. Thedevice of claim 5, wherein the at least one particle structure has apercentage coverage of at least one of between about: 10-50%, 10-45%,12-40%, 15-40%, 15-35%, 18-35%, 20-35%, and 20-30%.
 7. The device ofclaim 5, wherein a majority of the at least one particle structures havea maximum feature size of no more than at least one of about: 40 nm, 35nm, 30 nm, 25 nm, and 20 nm.
 8. The device of claim 5, wherein the atleast one particle structure has a feature size that is at least one ofa mean and a median that is at least one of between about: 5-40 nm, 5-30nm, 8-30 nm, 10-30 nm, 8-25 nm, 10-25 nm, 8-20 nm, 10-20 nm, 10-15 nm,and 8-15 nm.
 9. The device of claim 1, wherein the at least one particlestructure comprises a seed about which the deposited material tends tocoalesce.
 10. The device of claim 1, further comprising a patterningcoating disposed on a second layer surface, wherein: the first layersurface is an exposed layer surface of the patterning coating; aninitial sticking probability against deposition of the depositedmaterial on a surface of the patterning coating is substantially lessthan at least one of: 0.3 and the initial sticking probability againstdeposition of the deposited material on the second layer surface, suchthat the patterning coating is substantially devoid of a closed coatingof the deposited material.
 11. The device of claim 10, wherein thepatterning coating comprises at least one patterning material.
 12. Thedevice of claim 10, wherein the patterning coating comprises a firstpatterning material having a first initial sticking probability againstdeposition of the deposited material and a second patterning materialhaving a second initial sticking probability against deposition of thedeposited material, wherein the first initial sticking probability issubstantially less than the second initial sticking probability.
 13. Thedevice of claim 12, wherein the first patterning material is anucleation inhibiting coating (NIC) material and the second patterningmaterial is selected from at least one of an electron transport layer(ETL) material, Liq, and lithium fluoride (LiF).
 14. The device of claim1, wherein the layers extend in a first portion and a second portion ofthe at least one lateral aspect, the at least one EM radiation-absorbinglayer extending across the first portion, the device adapted to pass atleast one EM signal through the first portion, at an angle relative tothe layers.
 15. The device of claim 14, wherein the at least one EMsignal has a wavelength range in at least a part of at least one of theIR spectrum and the NIR spectrum.
 16. The device of claim 14, whereinthe first portion is substantially devoid of a closed coating of thedeposited material.
 17. The device of claim 14, wherein the firstportion corresponds to at least part of a signal transmissive region.18. The device of claim 14, wherein the device is adapted to accept theat least one EM signal therethrough, for exchange with at least oneunder-display component.
 19. The device of claim 18, wherein the atleast one under-display component comprises at least one of: a receiveradapted to receive; and a transmitter adapted to emit, the at least oneEM signal passing through the device.
 20. The device of claim 19,wherein the receiver is an IR detector and the transmitter is an IRemitter.
 21. The device of claim 19, wherein the transmitter emits afirst EM signal and the receiver detects a second EM signal that is areflection of the first EM signal.
 22. The device of claim 21, whereinthe exchange of the first and second EM signals provides biometricauthentication of a user.
 23. The device of claim 18, wherein the deviceforms a display panel of a user device enclosing the under-displaycomponent therewith.
 24. The device of claim 14, wherein the secondportion comprises at least one emissive region for emitting the at leastone EM signal at an angle relative to the layers.
 25. The device ofclaim 24, further comprising at least one semiconducting layer disposedon a layer thereof, wherein: each emissive region comprises a firstelectrode and a second electrode, the first electrode is disposedbetween the substrate and the at least one semiconducting layer, and theat least one semiconducting layer is disposed between the firstelectrode and the second electrode.
 26. The device of claim 25 furthercomprising at least one closed coating of a deposited material disposedon an exposed layer surface thereof in the second portion.
 27. Thedevice of claim 26, wherein the second electrode comprises the at leastone closed coating of the deposited material.